Patents by Inventor Hsin-Chang Lee

Hsin-Chang Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10295899
    Abstract: A photomask includes a pattern region and a plurality of defects in the pattern region. The photomask further includes a first fiducial mark outside of the pattern region, wherein the first fiducial mark includes identifying information for the photomask, the first fiducial mark has a first size and a first shape. The photomask further includes a second fiducial mark outside of the pattern region. The second fiducial mark has a second size different from the first size, or a second shape different from the first shape.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: May 21, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsin-Chang Lee, Chia-Jen Chen, Chih-Cheng Lin, Ping-Hsun Lin
  • Publication number: 20190146325
    Abstract: A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.
    Type: Application
    Filed: September 12, 2018
    Publication date: May 16, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Chang HSUEH, Huan-Ling LEE, Chia-Jen CHEN, Hsin-Chang LEE
  • Publication number: 20190148110
    Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
    Type: Application
    Filed: April 30, 2018
    Publication date: May 16, 2019
    Inventors: Chien-Cheng CHEN, Chia-Jen CHEN, Hsin-Chang LEE, Shih-Ming CHANG, Tran-Hui SHEN, Yen-Cheng HO, Chen-Shao HSU
  • Publication number: 20190146331
    Abstract: A reticle and a method for manufacturing a reticle are provided. The method includes forming a reflective multilayer (ML) over a front-side surface of a mask substrate. The method further includes forming a capping layer over the reflective ML. The method further includes forming a sacrificial multilayer over the capping layer. The method further includes forming an opening in the sacrificial multilayer to expose the capping layer. The method further includes forming a first absorption layer over the sacrificial multilayer and covering the capping layer in the opening. The method further includes removing the first absorption layer outside the opening in the sacrificial multilayer to form a first absorption pattern on a portion of the capping layer.
    Type: Application
    Filed: June 27, 2018
    Publication date: May 16, 2019
    Inventors: Yun-Yue LIN, Hsin-Chang LEE
  • Patent number: 10274819
    Abstract: A method for fabricating a pellicle for EUV lithography processes includes placing a hard mask in contact with a surface of a substrate. In some embodiments, the hard mask is configured to pattern the surface of the substrate to include a first region and a second region surrounding the first region. By way of example, while the mask in positioned in contact with the substrate, an etch process of the substrate is performed to etch the first and second regions into the substrate. Thereafter, an excess substrate region is removed so as to separate the etched first region from the excess substrate region. In various embodiments, the etched and separated first region serves as a pellicle for an extreme ultraviolet (EUV) lithography process.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: April 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Cheng Hsu, Chih-Tsung Shih, Jeng-Horng Chen, Chih-Cheng Lin, Hsin-Chang Lee, Shinn-Sheng Yu, Ta-Cheng Lien, Anthony Yen
  • Publication number: 20190101821
    Abstract: A mask container for storing a mask for photolithography, includes a cover and a base having a plurality of tapered corners. The tapered corners taper outward and downward from a top major surface of the base. The cover having the tapered corners extends downward that covers the tapered corners of the base when the cover is attached to the base. The tapered corners of the cover are tapered at about the same angle as the tapered corners of the base so that a surface of the tapered corners of the cover is substantially parallel to a corresponding surface of the tapered corner of the base when the cover is attached to the base. A recess is located in the tapered corners of the cover. A biasing member and a ball-shaped member are located in the tapered corners of the base to mate with the recess when the cover is attached to the base.
    Type: Application
    Filed: June 19, 2018
    Publication date: April 4, 2019
    Inventors: Pei-Cheng HSU, Ta-Cheng LIEN, Tzu Yi WANG, Hsin-Chang LEE
  • Publication number: 20190094683
    Abstract: A method of removing a pellicle from a photomask includes removing a portion of a membrane from a pellicle frame, wherein the pellicle frame remains attached to the photomask following the removing of the portion of the membrane. The method further includes removing the pellicle frame from the photomask. The method further includes cleaning the photomask.
    Type: Application
    Filed: October 31, 2017
    Publication date: March 28, 2019
    Inventors: Chue San YOO, Chih-Chiang TU, Chien-Cheng CHEN, Jong-Yuh CHANG, Kun-Lung HSIEH, Pei-Cheng HSU, Hsin-Chang LEE, Yun-Yue LIN
  • Patent number: 10162258
    Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Yue Lin, Hsuan-Chen Chen, Chih-Cheng Lin, Hsin-Chang Lee, Yao-Ching Ku, Wei-Jen Lo, Anthony Yen, Chin-Hsiang Lin, Mark Chien
  • Publication number: 20180364560
    Abstract: A photomask includes a pattern region and a plurality of defects in the pattern region. The photomask further includes a first fiducial mark outside of the pattern region, wherein the first fiducial mark includes identifying information for the photomask, the first fiducial mark has a first size and a first shape. The photomask further includes a second fiducial mark outside of the pattern region. The second fiducial mark has a second size different from the first size, or a second shape different from the first shape.
    Type: Application
    Filed: June 19, 2017
    Publication date: December 20, 2018
    Inventors: Hsin-Chang LEE, Chia-Jen CHEN, Chih-Cheng LIN, Ping-Hsun LIN
  • Publication number: 20180329288
    Abstract: A pellicle includes a frame. The frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The frame further includes a recess in a bottom surface of the frame. The pellicle further includes a membrane extending across the frame. The pellicle further includes a gasket configured to fit within the recess.
    Type: Application
    Filed: May 10, 2017
    Publication date: November 15, 2018
    Inventors: Chue San YOO, Hsin-Chang LEE, Pei-Cheng HSU, Yun-Yue LIN
  • Publication number: 20180292744
    Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.
    Type: Application
    Filed: June 15, 2018
    Publication date: October 11, 2018
    Inventors: Hsin-Chang LEE, Pei-Cheng HSU, Yun-Yue LIN, Hsuan-Chen CHEN, Hsuan-I WANG, Anthony YEN
  • Patent number: 10036951
    Abstract: A method for fabricating a pellicle assembly for a lithography process includes fabricating a pellicle frame including a sidewall having a porous material. In some embodiments, the pellicle frame is subjected to an anodization process to form the porous material. The porous material includes a plurality of pore channels extending, in a direction perpendicular to an exterior surface of the sidewall, from the exterior surface to an interior surface of the sidewall. In various embodiments, a pellicle membrane is formed, and the pellicle membrane is attached to the pellicle frame such that the pellicle membrane is suspended by the pellicle frame. Some embodiments disclosed herein further provide a system including a membrane and a pellicle frame that secures the membrane across the pellicle frame. In some examples, a portion of the pellicle frame includes a porous material, where the porous material includes the plurality of pore channels.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: July 31, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Cheng Hsu, Chih-Cheng Lin, Hsin-Chang Lee, Ta-Cheng Lien, Anthony Yen
  • Patent number: 10012899
    Abstract: A method includes depositing a first material layer over a first substrate; and depositing a graphene layer over the first material layer. The method further includes depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: July 3, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Chue San Yoo, Jong-Yuh Chang, Chia-Shiung Tsai, Ping-Yin Liu, Hsin-Chang Lee, Chih-Cheng Lin, Yun-Yue Lin
  • Publication number: 20180173093
    Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.
    Type: Application
    Filed: December 15, 2016
    Publication date: June 21, 2018
    Inventors: Pei-Cheng HSU, Hsin-Chang LEE, Yun-Yue LIN, Hsuan-Chen CHEN, Hsuan-I WANG, Anthony YEN
  • Publication number: 20180173092
    Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
    Type: Application
    Filed: December 15, 2016
    Publication date: June 21, 2018
    Inventors: Yun-Yue LIN, Hsuan-Chen CHEN, Chih-Cheng LIN, Hsin-Chang LEE, Yao-Ching KU, Wei-Jen LO, Anthony YEN, Chin-Hsiang LIN, Mark CHIEN
  • Patent number: 10001701
    Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: June 19, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Pei-Cheng Hsu, Hsin-Chang Lee, Yun-Yue Lin, Hsuan-Chen Chen, Hsuan-I Wang, Anthony Yen
  • Patent number: 9995999
    Abstract: A lithography mask includes a substrate, a reflective multilayer (ML) on the substrate, and a barrier layer on the reflective ML. The barrier layer includes at least one material selected from the group consisting of ruthenium nitride, hafnium oxide, aluminum nitride, boron carbide, boron nitride, and a combination thereof.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: June 12, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yun-Yue Lin, Hsin-Chang Lee, Chia-Jen Chen, Anthony Yen
  • Publication number: 20180149963
    Abstract: The present disclosure describes a method to form alignment marks on or in the top layer of an extreme ultraviolet (EUV) mask blank without the use of photolithographic methods. For example, the method can include forming a metal structure on the top layer of the EUV mask blank by dispensing a hexacarbonylchromium vapor on the top layer of the EUV mask and exposing the hexacarbonylchromium vapor to an electron-beam. The hexacarbonylchromium vapor is decomposed to form the metal structure at an area which is proximate to where the hexacarbonylchromium vapors interact with the electron-beam. In another example, the method can include forming a patterned structure in the top layer of an EUV mask blank with the use of an etcher aperture and an etching process.
    Type: Application
    Filed: March 31, 2017
    Publication date: May 31, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Fu HSIEH, Chih-Chiang TU, Jong-Yuh CHANG, Hsin-Chang LEE
  • Publication number: 20180149959
    Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over a first side of the substrate. An absorber layer is disposed over the reflective structure. The absorber layer contains one or more first overlay marks. A conductive layer is disposed over a second side of the substrate, the second side being opposite the first side. The conductive layer contains portions of one or more second overlay marks. In some embodiments, the lithography mask includes an EUV lithography mask.
    Type: Application
    Filed: August 7, 2017
    Publication date: May 31, 2018
    Inventors: Yun-Yue Lin, Hsin-Chang Lee, Chia-Jen Chen, Chih-Cheng Lin, Anthony Yen, Chin-Hsiang Lin
  • Publication number: 20180059534
    Abstract: A method includes depositing a first material layer over a first substrate; and depositing a graphene layer over the first material layer. The method further includes depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.
    Type: Application
    Filed: November 18, 2016
    Publication date: March 1, 2018
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Chue San Yoo, Jong-Yuh Chang, Chia-Shiung Tsai, Ping-Yin Liu, Hsin-Chang Lee, Chih-Cheng Lin, Yun-Yue Lin