Abstract: The present disclosure provides a phase shift mask. The phase shift mask includes a transparent substrate; an etch stop layer disposed on the substrate; and a tunable transparent material layer disposed on the etch stop layer and patterned to have an opening, wherein the tunable transparent material layer is designed to provide phase shift and has a transmittance greater than 90%.

Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.

Abstract: Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane with a thermal conductive surface; a porous pellicle frame; and a thermal conductive adhesive layer that secures the pellicle membrane to the porous pellicle frame. The porous pellicle frame includes a plurality of pore channels continuously extending from an exterior surface of the porous pellicle frame to an interior surface of the porous pellicle frame.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane with a thermal conductive surface; a porous pellicle frame; and a thermal conductive adhesive layer that secures the pellicle membrane to the porous pellicle frame. The porous pellicle frame includes a plurality of pore channels continuously extending from an exterior surface of the porous pellicle frame to an interior surface of the porous pellicle frame.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane with a thermal conductive surface; a porous pellicle frame; and a thermal conductive adhesive layer that secures the pellicle membrane to the porous pellicle frame. The porous pellicle frame includes a plurality of pore channels continuously extending from an exterior surface of the porous pellicle frame to an interior surface of the porous pellicle frame.

Abstract: A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.

Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.

Abstract: A photolithographic technique includes receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region. Each region has a different thickness of an absorptive layer disposed therein. The technique also includes exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region. Using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region a workpiece is exposed.

Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.

Abstract: A method and a system for inspection of a patterned structure are provided. In various embodiments, the method for inspection of a patterned structure includes transferring the patterned structure into a microscope. The method further includes acquiring a top-view image of the patterned structure by the microscope. The method further includes transferring the patterned structure out of the microscope and exporting the top-view image to an image analysis processor. The method further includes measuring a difference between a contour of the top-view image and a predetermined layout of the patterned structure by the image analysis processor.

Abstract: A method for fabricating a pellicle assembly for a lithography process includes fabricating a pellicle frame including a sidewall having a porous material. In some embodiments, the pellicle frame is subjected to an anodization process to form the porous material. The porous material includes a plurality of pore channels extending, in a direction perpendicular to an exterior surface of the sidewall, from the exterior surface to an interior surface of the sidewall. In various embodiments, a pellicle membrane is formed, and the pellicle membrane is attached to the pellicle frame such that the pellicle membrane is suspended by the pellicle frame. Some embodiments disclosed herein further provide a system including a membrane and a pellicle frame that secures the membrane across the pellicle frame. In some examples, a portion of the pellicle frame includes a porous material, where the porous material includes the plurality of pore channels.

Abstract: A lithography mask includes a substrate, a reflective multilayer (ML) on the substrate, and a barrier layer on the reflective ML. The barrier layer includes at least one material selected from the group consisting of ruthenium nitride, hafnium oxide, aluminum nitride, boron carbide, boron nitride, and a combination thereof.

Abstract: The present disclosure provides a structure of a photomask. The photomask includes a substrate; and a conductive material layer dispose over the substrate and patterned to include a plurality of openings and a recess structure surrounding the plurality of openings.

Abstract: A method for fabricating a pellicle for EUV lithography processes includes placing a hard mask in contact with a surface of a substrate. In some embodiments, the hard mask is configured to pattern the surface of the substrate to include a first region and a second region surrounding the first region. By way of example, while the mask in positioned in contact with the substrate, an etch process of the substrate is performed to etch the first and second regions into the substrate. Thereafter, an excess substrate region is removed so as to separate the etched first region from the excess substrate region. In various embodiments, the etched and separated first region serves as a pellicle for an extreme ultraviolet (EUV) lithography process.

Abstract: Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion.

Abstract: A photolithographic technique includes receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region. Each region has a different thickness of an absorptive layer disposed therein. The technique also includes exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region. Using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region a workpiece is exposed.

Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.

Abstract: The present disclosure provides a lithography mask comprising a substrate, a reflective multiplayer (ML) on the substrate, a barrier layer on the reflective ML, and an absorber layer over the barrier layer. In some embodiments, a thickness of the barrier layer is less than or equal to about 10 nm. In some embodiments, a portion of the absorber layer and a portion of the barrier layer are removed. The present disclosure also provides a method for fabricating a lithography mask, and a method for patterning a substrate using a lithography mask.