Abstract: A process of manufacturing a semiconductor structure is provided. The process begins with forming a work function metal layer on a substrate, and a hardmask is covered over the work function metal layer. A trench is formed to penetrate the hardmask and the work function metal layer, and an isolation structure is filled in the trench.

Abstract: A broad-band active delay line includes a plurality of broad-band active delay cells configured in a cascade topology. Each broad-band active delay cell includes a feedback loop and a feedforward path to achieve a high bandwidth.

Abstract: A high-speed continuous-time FIR (finite impulse response) filter comprises a plurality of processing cells configured in a cascade topology. Each processing cell receives a first signal and a second signal from a preceding circuit and a succeeding circuit, respectively, and outputs a third signal and a fourth signal to the succeeding circuit and the preceding circuit, respectively. Each processing cell further comprises a delay cell and a summing cell. Each of the delay cell and the summing cell performs a high speed signal processing using a combination of a feedback loop and a feedforward path.

Abstract: A broad-band active delay line comprises a plurality of broad-band active delay cells configured in a cascade topology. Each broad-band active delay cell comprises a feedback loop and a feedforward path to achieve a high bandwidth.

Abstract: A high-speed continuous-time FIR (finite impulse response) filter comprises a plurality of processing cells configured in a cascade topology. Each processing cell receives a first signal and a second signal from a preceding circuit and a succeeding circuit, respectively, and outputs a third signal and a fourth signal to the succeeding circuit and the preceding circuit, respectively. Each processing cell further comprises a delay cell and a summing cell. Each of the delay cell and the summing cell performs a high speed signal processing using a combination of a feedback loop and a feedforward path.

Abstract: A method for manufacturing organic light-emitting diodes (OLEDs) is disclosed, by adding nitrogen (N2) into the material of a hole transport layer (HTL) and evaporating the nitrogen and the material of the hole transport layer while growing the hole transport layer, so as to dope nitrogen molecules into the hole transport layer. In the hole transport layer, the nitrogen molecules are impurities of higher energy level, and are used to catch holes while the holes transports and trap the holes in the hole transport layer, thereby obtaining an object of improving the luminance efficiency of the organic light-emitting diodes with lower cost.

Abstract: A method for manufacturing organic light-emitting diodes (OLEDs) is disclosed, by adding nitrogen (N2) into the material of a hole transport layer (HTL) and evaporating the nitrogen and the material of the hole transport layer while growing the hole transport layer, so as to dope nitrogen molecules into the hole transport layer. In the hole transport layer, the nitrogen molecules are impurities of higher energy level, and are used to catch holes while the holes transports and trap the holes in the hole transport layer, thereby obtaining an object of improving the luminance efficiency of the organic light-emitting diodes with lower cost.