Patents by Inventor Hsin-Che Chiang
Hsin-Che Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11799017Abstract: An embodiment method includes: forming a semiconductor liner layer on exposed surfaces of a fin structure that extends above a dielectric isolation structure disposed over a substrate; forming a first capping layer to laterally surround a bottom portion of the semiconductor liner layer; forming a second capping layer over an upper portion of the semiconductor liner layer; and annealing the fin structure having the semiconductor liner layer, the first capping layer, and the second capping layer thereon, the annealing driving a dopant from the semiconductor liner layer into the fin structure, wherein a dopant concentration profile in a bottom portion of the fin structure is different from a dopant concentration profile in an upper portion of the fin structure.Type: GrantFiled: March 22, 2022Date of Patent: October 24, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Wei-Chih Kao, Hsin-Che Chiang, Yu-San Chien, Chun-Sheng Liang, Kuo-Hua Pan
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Patent number: 11756962Abstract: Provided is a semiconductor device including a substrate, one hybrid fin, a gate, and a dielectric structure. The substrate includes at least two fins. The hybrid fin is disposed between the at least two fins. The gate covers portions of the at least two fins and the hybrid fin. The dielectric structure lands on the hybrid fin to divide the gate into two segment. The two segments are electrically isolated to each other by the dielectric structure and the hybrid fin. The hybrid fin includes a first portion, disposed between the two segments of the gate; and a second portion, disposed aside the first portion, wherein a top surface of the second portion is lower than a top surface of the first portion.Type: GrantFiled: May 23, 2022Date of Patent: September 12, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-San Chien, Chun-Sheng Liang, Jhon-Jhy Liaw, Kuo-Hua Pan, Hsin-Che Chiang
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Publication number: 20230268406Abstract: A method includes forming a semiconductor fin over a substrate; forming a gate structure over the semiconductor fin, the gate structure comprising: a first metallic layer; a second metallic layer over the first metallic layer, wherein the first metallic layer is a metal compound of a first element and a second element and the second metallic layer is a single-element metal of the second element; and an oxide layer between the first metallic layer and the second metallic layer.Type: ApplicationFiled: April 24, 2023Publication date: August 24, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsin-Che CHIANG, Ju-Yuan TZENG, Chun-Sheng LIANG, Chih-Yang YEH, Shu-Hui WANG, Jeng-Ya David YEH
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Publication number: 20230268404Abstract: A method of applying and then removing a protective layer over a portion of a gate stack is provided. The protective layer is deposited and then a plasma precursor is separated into components. Neutral radicals are then utilized in order to remove the protective layer. In some embodiments the removal also forms a protective by-product which helps to protect underlying layers from damage during the etching process.Type: ApplicationFiled: April 28, 2023Publication date: August 24, 2023Inventors: Ming-Chia Tai, Ju-Yuan Tzeng, Hsin-Che Chiang, Yuan-Sheng Huang, Chun-Sheng Liang
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Patent number: 11670695Abstract: A method of applying and then removing a protective layer over a portion of a gate stack is provided. The protective layer is deposited and then a plasma precursor is separated into components. Neutral radicals are then utilized in order to remove the protective layer. In some embodiments the removal also forms a protective by-product which helps to protect underlying layers from damage during the etching process.Type: GrantFiled: April 16, 2021Date of Patent: June 6, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ming-Chia Tai, Ju-Yuan Tzeng, Hsin-Che Chiang, Yuan-Sheng Huang, Chun-Sheng Liang
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Patent number: 11670697Abstract: A semiconductor device includes a substrate comprising a semiconductor fin, a gate structure over the semiconductor fin, and source/drain structures over the semiconductor fin and on opposite sides of the gate structure. The gate stack comprises a high-k dielectric layer; a first work function metal layer over the high-k dielectric layer; an oxide of the first work function metal layer over the first work function metal layer; and a second work function metal layer over the oxide of the first work function metal layer, in which the first and second work function metal layers have different compositions; and a gate electrode over the second work function metal layer.Type: GrantFiled: June 21, 2021Date of Patent: June 6, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsin-Che Chiang, Ju-Yuan Tzeng, Chun-Sheng Liang, Chih-Yang Yeh, Shu-Hui Wang, Jeng-Ya David Yeh
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Publication number: 20230102368Abstract: A first dielectric layer is formed over upper and side surfaces of a semiconductor fin structure. A mask layer is formed over a first portion of the first dielectric layer disposed over the upper surface of the fin structure. The mask layer and the first dielectric layer have different material compositions. Second portions of the first dielectric layer disposed on side surfaces of the fin structure are etched. The mask layer protects the first portion of the first dielectric layer from being etched. A second dielectric layer is formed over the mask layer and the side surfaces of the fin structure. An oxidation process is performed to convert the mask layer into a dielectric material having substantially a same material composition as the first or second dielectric layer. The dielectric material and remaining portions of the first or second dielectric layer collectively serve as a gate dielectric of a transistor.Type: ApplicationFiled: December 5, 2022Publication date: March 30, 2023Inventors: Pang-Hsuan Liu, Kuan-Lin Yeh, Chun-Sheng Liang, Hsin-Che Chiang
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Publication number: 20230065498Abstract: A semiconductor device includes a silicon substrate and a fin formed above the substrate. The fin provides active regions for two devices, such as gate-all-around transistors. The semiconductor device also includes a fin-insulating structure positioned to electrically isolate the active regions for the two devices. The fin-insulating structure is formed in a trench, with a first portion adjacent the fin and a second portion below the fin and extending into the substrate. The fin-insulating structure includes an oxide liner in the second portion of the trench, but not the first portion. The fin-insulating structure is further filled with an insulating material such as silicon nitride.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Inventors: Chi-Wei Wu, Hsin-Che Chiang, Chun-Sheng Liang, Jeng-Ya Yeh
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Publication number: 20230024357Abstract: A method of forming a semiconductor device structure is provided. The method includes forming semiconductor fins at a first conductivity type region and a second conductivity type region of a substrate, forming a sacrificial gate structure across a portion of the semiconductor fins, wherein the sacrificial gate structure comprises a sacrificial gate dielectric layer and a sacrificial gate electrode layer over the sacrificial gate dielectric layer, and the sacrificial gate dielectric layer on the semiconductor fins of the first conductivity type region is asymmetrical in thickness between a top and a sidewall of the semiconductor fins. The method also includes forming a gate spacer on opposite sidewalls of the sacrificial gate structure, recessing the semiconductor fins not covered by the sacrificial gate structure and the gate spacer, forming source/drain feature on the recessed semiconductor fins, and removing the sacrificial gate structure to expose the top of the semiconductor fins.Type: ApplicationFiled: January 27, 2022Publication date: January 26, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Hung HUANG, Hsin-Che CHIANG, Jeng-Ya YEH
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Publication number: 20220399227Abstract: In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the S/D feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.Type: ApplicationFiled: July 26, 2022Publication date: December 15, 2022Inventors: Hsin-Che CHIANG, Ju-Li HUANG, Chun-Sheng LIANG, Jeng-Ya YEH
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Patent number: 11521971Abstract: A first dielectric layer is formed over upper and side surfaces of a semiconductor fin structure. A mask layer is formed over a first portion of the first dielectric layer disposed over the upper surface of the fin structure. The mask layer and the first dielectric layer have different material compositions. Second portions of the first dielectric layer disposed on side surfaces of the fin structure are etched. The mask layer protects the first portion of the first dielectric layer from being etched. A second dielectric layer is formed over the mask layer and the side surfaces of the fin structure. An oxidation process is performed to convert the mask layer into a dielectric material having substantially a same material composition as the first or second dielectric layer. The dielectric material and remaining portions of the first or second dielectric layer collectively serve as a gate dielectric of a transistor.Type: GrantFiled: November 13, 2020Date of Patent: December 6, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Pang-Hsuan Liu, Kuan-Lin Yeh, Chun-Sheng Liang, Hsin-Che Chiang
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Patent number: 11476156Abstract: In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the S/D feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.Type: GrantFiled: August 24, 2020Date of Patent: October 18, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsin-Che Chiang, Ju-Li Huang, Chun-Sheng Liang, Jeng-Ya Yeh
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Publication number: 20220328654Abstract: A dummy fin described herein includes a low dielectric constant (low-k or LK) material outer shell. A leakage path that would otherwise occur due to a void being formed in the low-k material outer shell is filled with a high dielectric constant (high-k or HK) material inner core. This increases the effectiveness of the dummy fin to provide electrical isolation and increases device performance of a semiconductor device in which the dummy fin is included. Moreover, the dummy fin described herein may not suffer from bending issues experienced in other types of dummy fins, which may otherwise cause high-k induced alternating current (AC) performance degradation. The processes for forming the dummy fins described herein are compatible with other fin field effect transistor (finFET) formation processes and are be easily integrated to minimize and/or prevent polishing issues, etch back issues, and/or other types of semiconductor processing issues.Type: ApplicationFiled: June 21, 2021Publication date: October 13, 2022Inventors: Wei-Chih KAO, Hsin-Che CHIANG, Chun-Sheng LIANG, Kuo-Hua PAN
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Publication number: 20220278102Abstract: Provided is a semiconductor device including a substrate, one hybrid fin, a gate, and a dielectric structure. The substrate includes at least two fins. The hybrid fin is disposed between the at least two fins. The gate covers portions of the at least two fins and the hybrid fin. The dielectric structure lands on the hybrid fin to divide the gate into two segment. The two segments are electrically isolated to each other by the dielectric structure and the hybrid fin. The hybrid fin includes a first portion, disposed between the two segments of the gate; and a second portion, disposed aside the first portion, wherein a top surface of the second portion is lower than a top surface of the first portion.Type: ApplicationFiled: May 23, 2022Publication date: September 1, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-San Chien, Chun-Sheng Liang, Jhon-Jhy Liaw, Kuo-Hua Pan, Hsin-Che Chiang
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Publication number: 20220254623Abstract: A semiconductor device includes a semiconductor substrate having a first lattice constant, a dopant blocking layer disposed over the semiconductor substrate, the dopant blocking layer having a second lattice constant different from the first lattice constant, and a buffer layer disposed over the dopant blocking layer, the buffer layer having a third lattice constant different from the second lattice constant. The semiconductor device also includes a plurality of channel members suspended over the buffer layer, an epitaxial feature abutting the channel members, and a gate structure wrapping each of the channel members.Type: ApplicationFiled: April 25, 2022Publication date: August 11, 2022Inventors: Hsin-Che Chiang, Wei-Chih Kao, Chun-Sheng Liang, Kuo-Hua Pan
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Publication number: 20220216329Abstract: An embodiment method includes: forming a semiconductor liner layer on exposed surfaces of a fin structure that extends above a dielectric isolation structure disposed over a substrate; forming a first capping layer to laterally surround a bottom portion of the semiconductor liner layer; forming a second capping layer over an upper portion of the semiconductor liner layer; and annealing the fin structure having the semiconductor liner layer, the first capping layer, and the second capping layer thereon, the annealing driving a dopant from the semiconductor liner layer into the fin structure, wherein a dopant concentration profile in a bottom portion of the fin structure is different from a dopant concentration profile in an upper portion of the fin structure.Type: ApplicationFiled: March 22, 2022Publication date: July 7, 2022Inventors: Wei-Chih Kao, Hsin-Che Chiang, Yu-San Chien, Chun-Sheng Liang, Kuo-Hua Pan
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Patent number: 11374006Abstract: Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a plurality of hybrid fins, a gate, and a dielectric structure. The substrate includes a plurality of fins. The plurality of hybrid fins are respectively disposed between the plurality of fins. The gate covers portions of the plurality of fins and the plurality of hybrid fins. The dielectric structure lands on one of the plurality of hybrid fins to divide the gate into two segment. The two segments are electrically isolated to each other by the dielectric structure and the one of the plurality of hybrid fins.Type: GrantFiled: June 12, 2020Date of Patent: June 28, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-San Chien, Chun-Sheng Liang, Jhon-Jhy Liaw, Kuo-Hua Pan, Hsin-Che Chiang
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Publication number: 20220173226Abstract: Methods for, and structures formed by, wet process assisted approaches implemented in a replacement gate process are provided. Generally, in some examples, a wet etch process for removing a capping layer can form a first monolayer on the underlying layer as an adhesion layer and a second monolayer on, e.g., an interfacial dielectric layer between a gate spacer and a fin as an etch protection mechanism. Generally, in some examples, a wet process can form a monolayer on a metal layer, like a barrier layer of a work function tuning layer, as a hardmask for patterning of the metal layer.Type: ApplicationFiled: February 21, 2022Publication date: June 2, 2022Inventors: Ju-Li Huang, Chun-Sheng Liang, Ming-Chi Huang, Ming-Hsi Yeh, Ying-Liang Chuang, Hsin-Che Chiang
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Publication number: 20220157812Abstract: A first dielectric layer is formed over upper and side surfaces of a semiconductor fin structure. A mask layer is formed over a first portion of the first dielectric layer disposed over the upper surface of the fin structure. The mask layer and the first dielectric layer have different material compositions. Second portions of the first dielectric layer disposed on side surfaces of the fin structure are etched. The mask layer protects the first portion of the first dielectric layer from being etched. A second dielectric layer is formed over the mask layer and the side surfaces of the fin structure. An oxidation process is performed to convert the mask layer into a dielectric material having substantially a same material composition as the first or second dielectric layer. The dielectric material and remaining portions of the first or second dielectric layer collectively serve as a gate dielectric of a transistor.Type: ApplicationFiled: November 13, 2020Publication date: May 19, 2022Inventors: Pang-Hsuan Liu, Kuan-Lin Yeh, Chun-Sheng Liang, Hsin-Che Chiang
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Patent number: 11315785Abstract: A method includes providing a semiconductor substrate; epitaxially growing a blocking layer from a top surface of the semiconductor substrate, wherein the blocking layer has a lattice constant different from the semiconductor substrate; epitaxially growing a semiconductor layer above the blocking layer; patterning the semiconductor layer to form a semiconductor fin, wherein the blocking layer is under the semiconductor fin; forming a source/drain (S/D) feature in contact with the semiconductor fin; and forming a gate structure engaging the semiconductor fin.Type: GrantFiled: September 17, 2019Date of Patent: April 26, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsin-Che Chiang, Wei-Chih Kao, Chun-Sheng Liang, Kuo-Hua Pan