Patents by Inventor Hsin Chiao

Hsin Chiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145260
    Abstract: An airflow heating module for an equipment front-end module, including: a first perforated plate including a first plurality of holes used as airflow inlets; a second perforated plate including a second plurality of holes used as airflow outlets; a plurality of heaters provided between the first and the second perforated plates; and an active air intake device provided on the first perforated plate to accelerate airflow flowing through the first plurality of holes and past the plurality of heaters, such that the airflow carries heat generated by the heaters and passes through the second plurality of holes. Each of the heaters includes a heating tube and a fin. The fin is formed helically around the heating tube and attached thereto.
    Type: Application
    Filed: December 27, 2022
    Publication date: May 2, 2024
    Inventors: Yueh-Lin CHIANG, Hsin-Jan PAI, Ying-Feng LEE, Ling-Chiao HUANG
  • Publication number: 20240128397
    Abstract: An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.
    Type: Application
    Filed: November 18, 2022
    Publication date: April 18, 2024
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Publication number: 20240128398
    Abstract: An epitaxial structure includes a first epitaxial layer, a second epitaxial layer, and an interface treatment layer. The second epitaxial layer is disposed on the first epitaxial layer. The interface treatment layer is located between the first epitaxial layer and the second epitaxial layer and is in contact with the first epitaxial layer and the second epitaxial layer. The first epitaxial layer, the second epitaxial layer, and the interface treatment layer include the same material. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of a TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.
    Type: Application
    Filed: November 25, 2022
    Publication date: April 18, 2024
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Publication number: 20240097070
    Abstract: A micro light-emitting component including a first type cladding layer, a light-emitting layer, a second type cladding layer, a plurality of window layers and at least one interposer is provided. The light-emitting layer is located on the first type cladding layer, and the second type cladding layer is located on the light-emitting layer. The light-emitting layer is located between the first type cladding layer and the second type cladding layer. The window layers are located on the second type cladding layer. The interposer is located between any two adjacent of the window layers. An ion doping concentration of the interposer is less than or equal to an ion doping concentration of the window layers.
    Type: Application
    Filed: October 31, 2022
    Publication date: March 21, 2024
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Patent number: 11763411
    Abstract: This disclosure covers machine-learning methods, non-transitory computer readable media, and systems that generate a multiplier that efficiently and effectively provides on-demand transportation services for a geographic area. The methods, non-transitory computer readable media, and systems dynamically adjust the multiplier with machine learners to maintain a target estimated time of arrival for a provider device to fulfill a request received from a requestor device. In some embodiments, the methods, non-transitory computer readable media, and systems generate a multiplier report comprising a representation of a geographic area and an indication of the multiplier to facilitate inflow and outflow of provider devices within and without the geographic area.
    Type: Grant
    Filed: November 28, 2022
    Date of Patent: September 19, 2023
    Assignee: Lyft, Inc.
    Inventors: Ricky Chachra, Tzu-Hsin Chiao, Ashivni Shekhawat, Christopher Sholley, Jerome Hong-Phat Thai, Adriel Frederick
  • Patent number: 11658268
    Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: May 23, 2023
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao Fang, Yen-Lin Lai, Jyun-De Wu
  • Publication number: 20230008639
    Abstract: A micro light emitting diode chip including a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first-type electrode, and a second-type electrode is provided. The first-type semiconductor layer has a first high-concentration doping region and a first low-concentration doping region. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first-type electrode is directly contacted and electrically connected to the first high-concentration doping region. The second-type electrode is electrically connected to the second-type semiconductor layer.
    Type: Application
    Filed: September 30, 2021
    Publication date: January 12, 2023
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao Fang, Jyun-De Wu
  • Patent number: 11514546
    Abstract: This disclosure covers machine-learning methods, non-transitory computer readable media, and systems that generate a multiplier that efficiently and effectively provides on-demand transportation services for a geographic area. The methods, non-transitory computer readable media, and systems dynamically adjust the multiplier with machine learners to maintain a target estimated time of arrival for a provider device to fulfill a request received from a requestor device. In some embodiments, the methods, non-transitory computer readable media, and systems generate a multiplier report comprising a representation of a geographic area and an indication of the multiplier to facilitate inflow and outflow of provider devices within and without the geographic area.
    Type: Grant
    Filed: July 6, 2020
    Date of Patent: November 29, 2022
    Assignee: Lyft, Inc.
    Inventors: Ricky Chachra, Tzu-Hsin Chiao, Ashivni Shekhawat, Christopher Sholley, Jerome Hong-Phat Thai, Adriel Frederick
  • Patent number: 11411136
    Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: August 9, 2022
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Tzu-Wen Wang, Hsin-Chiao Fang
  • Patent number: 11329192
    Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: May 10, 2022
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Publication number: 20210399174
    Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.
    Type: Application
    Filed: November 9, 2020
    Publication date: December 23, 2021
    Inventors: HSIN-CHIAO FANG, YEN-LIN LAI, JYUN-DE WU
  • Patent number: 11189577
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: November 30, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Publication number: 20210367105
    Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.
    Type: Application
    Filed: October 21, 2020
    Publication date: November 25, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Tzu-Wen Wang, Hsin-Chiao Fang
  • Publication number: 20210135051
    Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.
    Type: Application
    Filed: May 7, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
  • Publication number: 20210134737
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
    Type: Application
    Filed: April 6, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
  • Publication number: 20200410625
    Abstract: This disclosure covers machine-learning methods, non-transitory computer readable media, and systems that generate a multiplier that efficiently and effectively provides on-demand transportation services for a geographic area. The methods, non-transitory computer readable media, and systems dynamically adjust the multiplier with machine learners to maintain a target estimated time of arrival for a provider device to fulfill a request received from a requestor device. In some embodiments, the methods, non-transitory computer readable media, and systems generate a multiplier report comprising a representation of a geographic area and an indication of the multiplier to facilitate inflow and outflow of provider devices within and without the geographic area.
    Type: Application
    Filed: July 6, 2020
    Publication date: December 31, 2020
    Inventors: Ricky Chachra, Tzu-Hsin Chiao, Ashivni Shekhawat, Christopher Sholley, Jerome Hong-Phat Thai, Adriel Frederick
  • Patent number: 10879362
    Abstract: A transistor including a substrate, a source, a drain, an active portion, a fin-shaped gate, and an insulation layer is provided. The source is located on the substrate. The drain is located on the substrate. The active portion connects the source and the drain. The fin-shaped gate wraps the active portion. A first portion of the insulation layer separates the fin-shaped gate from the active portion, a second portion of the insulation layer separates the fin-shaped gate from the substrate, a third portion of the insulation layer separates the fin-shaped gate from the source and from the drain, and a fourth portion of the insulation layer is located on a surface of the fin-shaped gate facing away from the active portion. Here, the insulation layer is integrally formed.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: December 29, 2020
    Assignee: E Ink Holdings Inc.
    Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Hsin Chiao, Wei-Tsung Chen
  • Publication number: 20200286106
    Abstract: This disclosure describes a transportation matching system that utilizes a combination of an offline transportation optimization model and an online transportation optimization model to generate transportation metric functions for predicted and received transportation requests based on optimization parameters. The disclosed systems utilize an offline transportation optimization model to predict transportation requests and to generate corresponding transportation metric functions for given locations over particular time intervals. The disclosed systems further utilize an online transportation optimization model to receive transportation requests and generate transportation metric functions for the received requests based at least in part on the predicted transportation requests and corresponding metric functions.
    Type: Application
    Filed: March 4, 2019
    Publication date: September 10, 2020
    Inventors: Guillaume Arnaud Candeli, Tzu-Hsin Chiao, Adriel Frederick, Varun Ramakrishna Pattabhiraman, Shaswat Pratap Shah, Ashivni Shekhawat, Yanqiao Wang, Irena Stephanie Vezich, Vijay Tupil Narasiman, Keshave Puranmalka
  • Patent number: 10706487
    Abstract: This disclosure covers machine-learning methods, non-transitory computer readable media, and systems that generate a multiplier that efficiently and effectively provides on-demand transportation services for a geographic area. The methods, non-transitory computer readable media, and systems dynamically adjust the multiplier with machine learners to maintain a target estimated time of arrival for a provider device to fulfill a request received from a requestor device. In some embodiments, the methods, non-transitory computer readable media, and systems generate a multiplier report comprising a representation of a geographic area and an indication of the multiplier to facilitate inflow and outflow of provider devices within and without the geographic area.
    Type: Grant
    Filed: November 11, 2017
    Date of Patent: July 7, 2020
    Assignee: LYFT, INC.
    Inventors: Ricky Chachra, Tzu-Hsin Chiao, Ashivni Shekhawat, Christopher Sholley, Jerome Hong-Phat Thai, Adriel Frederick
  • Patent number: 10629760
    Abstract: Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: April 21, 2020
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Helen Liu, Tim Dennis, Jane Manning, Hsin-Chiao Luan, Ann Waldhauer, Genevieve A. Solomon, Brenda Pagulayan Malgapu, Joseph Ramirez