Abstract: A method for making a slow releasing device for slowing releasing chlorine dioxide includes sending gaseous chlorine dioxide into a receiving container containing a plurality of particulate carriers. Each particulate carrier has a plurality of pores in a surface thereof. The receiving container is placed in a low-temperature environment below 30° C. The gaseous chlorine dioxide is absorbed by the particulate carriers. The particulate carries is packaged in at least one container that is subsequently sealed. The gaseous chloride dioxide can be purified before entering the receiving container. Superfluous chloride dioxide can be dissolved or absorbed in water in an absorbing tank on a circulating pipeline connected to the receiving container via an outlet pipe.

Abstract: A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.

Abstract: A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally-grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.

Abstract: A method for making a slow releasing device for slowing releasing chlorine dioxide includes sending gaseous chlorine dioxide into a receiving container containing a plurality of particulate carriers. Each particulate carrier has a plurality of pores in a surface thereof. The receiving container is placed in a low-temperature environment below 30° C. The gaseous chlorine dioxide is absorbed by the particulate carriers. The particulate carries is packaged in at least one container that is subsequently sealed. The gaseous chloride dioxide can be purified before entering the receiving container. Superfluous chloride dioxide can be dissolved or absorbed in water in an absorbing tank on a circulating pipeline connected to the receiving container via an outlet pipe.

Abstract: Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described.

Abstract: A method for fabricating a solar cell is described. The method includes first providing, in a process chamber, a substrate having a light-receiving surface. An anti-reflective coating (ARC) layer is then formed, in the process chamber, above the light-receiving surface of the substrate. Finally, without removing the substrate from the process chamber, a protection layer is formed above the ARC layer.

Abstract: A method for fabricating a solar cell is described. The method includes first providing a substrate having a dielectric layer disposed thereon. A pin-hole-free masking layer is then formed above the dielectric layer. Finally, without the use of a mask, the pin-hole-free masking layer is patterned to form a patterned pin-hole-free masking layer.

Abstract: A method for fabricating a solar cell is described. The method includes first providing, in a process chamber, a substrate having a light-receiving surface. An anti-reflective coating (ARC) layer is then formed, in the process chamber, above the light-receiving surface of the substrate. Finally, without removing the substrate from the process chamber, a protection layer is formed above the ARC layer.

Abstract: A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally-grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.

Abstract: Systems and methods combining a cluster chamber with linear sources are described. A plurality of wafers is mounted on a pallet. A central robot in a cluster chamber moves the pallet among chambers connected to the cluster chamber chamber. At least one of the chambers connected to the cluster chamber includes a linear deposition source, the pallet moveable relative to the linear deposition source.

Abstract: A method for fabricating a solar cell is described. The method includes first providing, in a process chamber, a substrate having a light-receiving surface. An anti-reflective coating (ARC) layer is then formed, in the process chamber, above the light-receiving surface of the substrate. Finally, without removing the substrate from the process chamber, a protection layer is formed above the ARC layer.

Abstract: A system for substrate deposition. The system includes a wafer pallet and an anode. The wafer pallet has a bottom and a top. The top of the wafer pallet is configured to hold a substrate wafer. The anode has a substantially fixed position relative to the wafer pallet and is configured to move with the wafer pallet through the deposition chamber. The anode is electrically isolated from the substrate wafer.

Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

Abstract: Methods for low temperature deposition an amorphous carbon film with improved step coverage are provided. In one embodiment, the method includes providing a substrate in a process chamber, flowing a gas mixture including at least a hydrocarbon compound and an inert gas into the process chamber, wherein the hydrocarbon compound has greater than 5 carbon atoms, maintaining the substrate temperature at a range below 450 degrees Celsius, and depositing an amorphous carbon film on the substrate.

Abstract: The invention provides processes for producing a very low dislocation density in heterogeneous epitaxial layers with a wide range of thicknesses, including a thickness compatible with conventional silicon CMOS processing. In a process for reducing dislocation density in a semiconductor material formed as an epitaxial layer upon a dissimilar substrate material, the epitaxial layer and the substrate are heated at a heating temperature that is less than about a characteristic temperature of melting of the epitaxial layer but greater than about a temperature above which the epitaxial layer is characterized by plasticity, for a first time duration. Then the epitaxial layer and the substrate are cooled at a cooling temperature that is lower than the about the heating temperature, for a second time duration. These heating and cooling steps are carried out a selected number of cycles to reduce the dislocation density of the epitaxial layer.

Abstract: The invention provides processes for producing a high-quality silicon dioxide layer on a germanium layer. In one example process, a layer of silicon is deposited on the germanium layer, and the silicon layer is exposed to dry oxygen gas at a temperature that is sufficient to induce oxidation of the silicon layer substantially only by thermal energy. In a further example process, the silicon layer is exposed to water vapor at a temperature that is sufficient to induce oxidation of the silicon layer substantially only by thermal energy. It can be preferred that the exposure to dry oxygen gas or to water vapor be carried out in an oxidation chamber at a chamber pressure that is no less than ambient pressure. In one example, the chamber pressure is above about 2 atm. The temperature at which the silicon layer is exposed to the dry oxygen gas is preferably above about 500° C., more preferably above about 600° C., even more preferably above about 700° C., and most preferably above about 800° C.