Abstract: This disclosure relates to polishing compositions containing at least one abrasive, at least one organic acid or a salt thereof, at least one organic solvent in an amount of from about 3% to about 50% by weight of the composition, and an aqueous solvent.

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including forming a dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, increasing a thickness of the dielectric layer in the first region, including forming an oxygen capturing layer over the dielectric layer in the first region, including forming the oxygen capturing layer over the first region and the second region, and removing the oxygen capturing layer over the second region with a mask layer, performing an oxidizing operation from a top surface of the oxygen capturing layer to increase oxygen concentration of the oxygen capturing layer, removing the oxygen capturing layer over the first region, and forming a gate structure over the dielectric layer.

Abstract: The present disclosure, in some embodiments, relates to a brush cleaning apparatus. The brush cleaning apparatus includes a wafer support configured to support a wafer. The brush cleaning apparatus also includes a cleaning brush including a porous material coupled to a core material. An uppermost surface of the porous material defines a planar cleaning surface. A first nozzle is configured to apply a first cleaning liquid directly between the wafer and the planar cleaning surface of the cleaning brush.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including forming an inter dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, forming a high-k material over the inter dielectric layer in the first region and the second region, forming an oxygen capturing layer over the high-k material in the first region, and applying oxidizing agent over the oxygen capturing layer.

Abstract: Some embodiments relate to a carrier head. The carrier head includes a housing configured to enclose a wafer, wherein the housing includes a retaining ring recess configured to circumferentially surround the wafer. A retaining ring, which includes a first ring-shaped layer and a second ring-shaped layer, is disposed in the retaining ring recess. The second ring-shaped layer is disposed deeper in the retaining ring recess than the first ring-shaped layer and separates the first ring-shaped layer from a bottom of the retaining ring recess. A hardness of the second ring-shaped layer is less than a hardness of the first ring-shaped layer.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including forming an inter dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, forming a high-k material over the inter dielectric layer in the first region and the second region, forming an oxygen capturing layer over the high-k material in the first region, and applying oxidizing agent over the oxygen capturing layer.

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

Abstract: A semiconductor device is manufactured using a cleaning process. The cleaning process utilizes a semiconductor manufacturing tool that has a wet cleaning section and a plasma cleaning section. The semiconductor device is placed within a wet cleaning chamber within the wet cleaning section, where a wet cleaning process is performed. Once completed, and without breaking atmosphere, the semiconductor device is removed from the wet cleaning section and placed within a plasma cleaning chamber within the plasma cleaning section. A plasma clean is then performed.

Abstract: A method of processing a wafer is disclosed. The method includes, in some embodiments, causing a relative movement between a cleaning brush and a wafer. During the relative movement, a planar cleaning surface of the cleaning brush is brought into contact with a surface of the wafer to remove contaminants from the surface of the wafer. A first size of the cleaning brush, in a plan view, is larger than a second size of the wafer in the plan view.

Abstract: The present disclosure, in some embodiments, relates to a brush cleaning apparatus. The brush cleaning apparatus includes a wafer support configured to support a wafer. The brush cleaning apparatus also includes a cleaning brush including a porous material coupled to a core material. An uppermost surface of the porous material defines a planar cleaning surface. A first nozzle is configured to apply a first cleaning liquid directly between the wafer and the planar cleaning surface of the cleaning brush.

Abstract: A brush cleaning apparatus includes a wafer support configured to support a wafer, and at least one cleaning brush moveable relative to the wafer support. The at least one cleaning brush has opposite first and second sides, and, on the first side, a planar cleaning surface configured to come into contact with the wafer supported by the wafer support to remove contaminants from the wafer.

Abstract: Some embodiments relate to a carrier head. The carrier head includes a housing configured to enclose a wafer, wherein the housing includes a retaining ring recess configured to circumferentially surround the wafer. A retaining ring, which includes a first ring-shaped layer and a second ring-shaped layer, is disposed in the retaining ring recess. The second ring-shaped layer is disposed deeper in the retaining ring recess than the first ring-shaped layer and separates the first ring-shaped layer from a bottom of the retaining ring recess. A hardness of the second ring-shaped layer is less than a hardness of the first ring-shaped layer.

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

Abstract: Some embodiments relate to a method of using a polishing system. In this method, a wafer is secured in a carrier head. The carrier head includes a housing, which includes a retaining ring recess, enclosing the wafer. A retaining ring is positioned in the retaining ring recess. The retaining ring surrounds the wafer, and has a hardness ranging from about 5 shore A to about 80 shore D. The wafer is pressed against a polishing pad, and at least one of the carrier head or the polishing pad is moved relative to the other.

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

Abstract: A semiconductor device is manufactured using a cleaning process. The cleaning process utilizes a semiconductor manufacturing tool that has a wet cleaning section and a plasma cleaning section. The semiconductor device is placed within a wet cleaning chamber within the wet cleaning section, where a wet cleaning process is performed. Once completed, and without breaking atmosphere, the semiconductor device is removed from the wet cleaning section and placed within a plasma cleaning chamber within the plasma cleaning section. A plasma clean is then performed.

Abstract: A method of processing a wafer is disclosed. The method includes, in some embodiments, causing a relative movement between a cleaning brush and a wafer. During the relative movement, a planar cleaning surface of the cleaning brush is brought into contact with a surface of the wafer to remove contaminants from the surface of the wafer. A first size of the cleaning brush, in a plan view, is larger than a second size of the wafer in the plan view.

Abstract: A semiconductor device is manufactured using a cleaning process. The cleaning process utilizes a semiconductor manufacturing tool that has a wet cleaning section and a plasma cleaning section. The semiconductor device is placed within a wet cleaning chamber within the wet cleaning section, where a wet cleaning process is performed. Once completed, and without breaking atmosphere, the semiconductor device is removed from the wet cleaning section and placed within a plasma cleaning chamber within the plasma cleaning section. A plasma clean is then performed.