Patents by Inventor Hsin-Ying Wang
Hsin-Ying Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240113262Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a first contact electrode and a second contact electrode formed on the semiconductor stack, wherein the first contact electrode includes a first contact part formed on the first semiconductor layer and the second contact electrode includes a second contact part formed on the second semiconductor layer; an insulating stack formed on the semiconductor stack, including an opening on the second contact part; a first electrode pad and a second electrode pad formed on the insulating stack, wherein the second electrode pad filled in the opening and connecting the second contact part; wherein the second electrode pad includes an upper surface, and the upper surface includes a platform area and a depression area on the second contact part; wherein the platform area has a maximum height relative to other areas of the upper surface; wherein an area of a projection of the platType: ApplicationFiled: September 1, 2023Publication date: April 4, 2024Inventors: Hsin-Ying WANG, Hui-Chun YEH, Jhih-Yong YANG, Chen OU, Cheng-Lin LU
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Publication number: 20240014352Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: ApplicationFiled: September 20, 2023Publication date: January 11, 2024Inventors: Chao-Hsing CHEN, Cheng-Lin LU, Chih-Hao CHEN, Chi-Shiang HSU, I-Lun MA, Meng-Hsiang HONG, Hsin-Ying WANG, Kuo-Ching HUNG, Yi-Hung LIN
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Publication number: 20230395765Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: ApplicationFiled: August 3, 2023Publication date: December 7, 2023Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Publication number: 20230361248Abstract: A light-emitting device, includes a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, comprising a second core region under the second pad electrode and an extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the second core region; wherein in a top view, a contour of the second pad electrode has a circular shape and a contour of the second core region has a shape which is different from the circular shape and selected from square, rectangle, rounded rectangle, rhombus, trapezoid and polygon.Type: ApplicationFiled: July 19, 2023Publication date: November 9, 2023Inventors: Hsin-Ying WANG, Hui-Chun YEH, Li-Ming CHANG, Chien-Fu SHEN, Chen OU
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Patent number: 11810943Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: GrantFiled: September 1, 2022Date of Patent: November 7, 2023Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, Tsung-Hsun Chiang, Liang-Sheng Chi, Jing Jiang, Jie Chen, Tzung-Shiun Yeh, Hsin-Ying Wang, Hui-Chun Yeh, Chien-Fu Shen
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Patent number: 11799060Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: GrantFiled: February 23, 2023Date of Patent: October 24, 2023Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Cheng-Lin Lu, Chih-Hao Chen, Chi-Shiang Hsu, I-Lun Ma, Meng-Hsiang Hong, Hsin-Ying Wang, Kuo-Ching Hung, Yi-Hung Lin
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Publication number: 20230317898Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: ApplicationFiled: June 5, 2023Publication date: October 5, 2023Applicant: EPISTAR CORPORATIONInventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Publication number: 20230317912Abstract: A light-emitting diode, includes a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a transparent conductive layer formed on the semiconductor stack and electrically connected to the second semiconductor layer; an insulating layer formed on the transparent conductive layer, comprising a plurality of first opening; a first electrode formed on the insulating layer, electrically connected to the first semiconductor layer; and a second electrode formed on the insulating layer, comprising a second pad and a second extension extending from the second pad along a long side of the light-emitting diode toward the first electrode, electrically connected to the transparent conductive layer, wherein the second extension comprise a plurality of node parts and a plurality of linking parts alternately disposed, and in a plan view, the node part has a width smaller than that of the second pad and lager than that of the linking part and that of the first opening; wType: ApplicationFiled: June 7, 2023Publication date: October 5, 2023Inventors: Jhih Yong YANG, Hsin Ying WANG, De Shan KUO
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Patent number: 11757077Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: GrantFiled: May 3, 2021Date of Patent: September 12, 2023Assignee: EPISTAR CORPORATIONInventors: Hsin-Ying Wang, Chih-Hao Chen, Chien-Chih Liao, Chao-Hsing Chen, Wu-Tsung Lo, Tsun-Kai Ko, Chen Ou
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Patent number: 11705545Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: GrantFiled: May 3, 2021Date of Patent: July 18, 2023Assignee: EPISTAR CORPORATIONInventors: Hsin-Ying Wang, Chih-Hao Chen, Chien-Chih Liao, Chao-Hsing Chen, Wu-Tsung Lo, Tsun-Kai Ko, Chen Ou
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Publication number: 20230197904Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: ApplicationFiled: February 23, 2023Publication date: June 22, 2023Inventors: Chao-Hsing CHEN, Cheng-Lin LU, Chih-Hao CHEN, Chi-Shiang HSU, I-Lun MA, Meng-Hsiang HONG, Hsin-Ying WANG, Kuo-Ching HUNG, Yi-Hung LIN
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Publication number: 20230187473Abstract: A light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and the second light-emitting structure unit includes a second sidewall; an isolation layer formed on the first sidewall and the second sidewall, including a first edge on the first light-emitting structure unit and wherein the first edge has an acute angle in a cross-sectional view; and an electrical connection formed on the isolation layer, the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall and the second sidewall are inclined; and wherein the electrical connection includes a first part on the first light-emitting structure unit, and the first part doType: ApplicationFiled: February 2, 2023Publication date: June 15, 2023Inventors: Chien-Fu SHEN, Chao-Hsing CHEN, Tsun-Kai KO, Schang-Jing HON, Sheng-Jie HSU, De-Shan KUO, Hsin-Ying WANG, Chiu-Lin YAO, Chien-Fu HUANG, Hsin-Mao LIU, Chien-Kai CHUNG
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Patent number: 11621374Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: GrantFiled: May 14, 2021Date of Patent: April 4, 2023Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Cheng-Lin Lu, Chih-Hao Chen, Chi-Shiang Hsu, I-Lun Ma, Meng-Hsiang Hong, Hsin-Ying Wang, Kuo-Ching Hung, Yi-Hung Lin
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Patent number: 11594573Abstract: A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.Type: GrantFiled: February 8, 2021Date of Patent: February 28, 2023Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Shen, Chao-Hsing Chen, Tsun-Kai Ko, Schang-Jing Hon, Sheng-Jie Hsu, De-Shan Kuo, Hsin-Ying Wang, Chiu-Lin Yao, Chien-Fu Huang, Hsin-Mao Liu, Chien-Kai Chung
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Publication number: 20230005984Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: ApplicationFiled: September 1, 2022Publication date: January 5, 2023Inventors: Po-Shun CHIU, Tsung-Hsun CHIANG, Liang-Sheng CHI, Jing JIANG, Jie CHEN, Tzung- Shiun YEH, Hsin-Ying WANG, Hui-Chun YEH, Chien-Fu SHEN
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Patent number: 11437427Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: GrantFiled: January 23, 2020Date of Patent: September 6, 2022Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, Tsung-Hsun Chiang, Liang-Sheng Chi, Jing Jiang, Jie Chen, Tzung-Shiun Yeh, Hsin-Ying Wang, Hui-Chun Yeh, Chien-Fu Shen
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Patent number: 11430934Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.Type: GrantFiled: August 5, 2020Date of Patent: August 30, 2022Assignee: EPISTAR CORPORATIONInventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
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Publication number: 20210343913Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: ApplicationFiled: May 3, 2021Publication date: November 4, 2021Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Publication number: 20210343906Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: ApplicationFiled: May 3, 2021Publication date: November 4, 2021Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Patent number: D1012330Type: GrantFiled: November 18, 2020Date of Patent: January 23, 2024Assignee: EPISTAR CORPORATIONInventors: Chen Ou, Li-Ming Chang, Chien-Fu Shen, Hsin-Ying Wang