Patents by Inventor Hsin-Ying Wang
Hsin-Ying Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210343906Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: ApplicationFiled: May 3, 2021Publication date: November 4, 2021Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Publication number: 20210336090Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.Type: ApplicationFiled: April 22, 2021Publication date: October 28, 2021Inventors: Jhih-Yong YANG, Hsin-Ying WANG, De-Shan KUO, Chao-Hsing CHEN, Yi-Hung LIN, Meng-Hsiang HONG, Kuo-Ching HUNG, Cheng-Lin LU
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Publication number: 20210296536Abstract: A semiconductor light-emitting device includes: a substrate; a semiconductor stack on the substrate including a first semiconductor contact layer including an upper surface; a light-emitting stack including an active layer on the upper surface; a second semiconductor contact layer on the light-emitting stack; and a recessed region including part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on the substrate and the light-emitting stack; and a first and a second electrode pad on the substrate and electrically connected to the first semiconductor contact layer and the transparent electrode via first and second openings of the protective layer. A ratio of an area of the substrate to an area of the transparent electrode ranges from 2 to 100. A ratio of an operating current of the semiconductor light-emitting device to the area of the transparent electrode ranges from 10 mA/mm2 to 1000 mA/mm2.Type: ApplicationFiled: March 15, 2021Publication date: September 23, 2021Inventors: Hsin-Ying WANG, Chao-Hsing CHEN, Chi-Ling LEE, Chen OU, Min-Hsun HSIEH
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Publication number: 20210273137Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: ApplicationFiled: May 14, 2021Publication date: September 2, 2021Inventors: Chao-Hsing CHEN, Cheng-Lin LU, Chih-Hao CHEN, Chi-Shiang HSU, I-Lun MA, Meng-Hsiang HONG, Hsin-Ying WANG, Kuo-Ching HUNG, Yi-Hung LIN
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Publication number: 20210183942Abstract: A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.Type: ApplicationFiled: February 8, 2021Publication date: June 17, 2021Inventors: Chien-Fu SHEN, Chao-Hsing CHEN, Tsun-Kai KO, Schang-Jing HON, Sheng-Jie HSU, De-Shan KUO, Hsin-Ying WANG, Chiu-Lin YAO, Chien-Fu HUANG, Hsin-Mao LIU, Chien-Kai CHUNG
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Patent number: 11038085Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: GrantFiled: August 1, 2019Date of Patent: June 15, 2021Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Cheng-Lin Lu, Chih-Hao Chen, Chi-Shiang Hsu, I-Lun Ma, Meng-Hsiang Hong, Hsin-Ying Wang, Kuo-Ching Hung, Yi-Hung Lin
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Patent number: 10950652Abstract: Disclosed herein is a light-emitting device.Type: GrantFiled: July 17, 2018Date of Patent: March 16, 2021Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Shen, Chao-Hsing Chen, Tsun-Kai Ko, Schang-Jing Hon, Sheng-Jie Hsu, De-Shan Kuo, Hsin-Ying Wang, Chiu-Lin Yao, Chien-Fu Huang, Hsin-Mao Liu, Chien-Kai Chung
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Publication number: 20210036049Abstract: A light-emitting diode, includes a substrate; a semiconductor stack formed on the substrate; a first current blocking patterned structure and a second current blocking patterned structure formed on the semiconductor stack and separated from each other; and a plurality of electrodes formed on the semiconductor stack and electrically connected to the semiconductor stack; wherein the first current blocking patterned structure is overlapped with one of the plurality of electrodes and the second current blocking patterned structure is not overlapped with the plurality of electrodes.Type: ApplicationFiled: July 30, 2020Publication date: February 4, 2021Inventors: Hsin Ying WANG, Tzung Shiun YEH, Yu Ling LIN, Bo Jiun HU
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Publication number: 20210020817Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.Type: ApplicationFiled: August 5, 2020Publication date: January 21, 2021Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
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Publication number: 20200373472Abstract: A light-emitting diode, includes a semiconductor stack, including a first semiconductor layer, an active region, and a second semiconductor layer; a transparent conductive layer formed on the semiconductor stack and electrically connected to the second semiconductor layer; an insulating layer formed on the transparent conductive layer, including a first opening; and an electrode layer formed on the insulating layer, including a first pad and a first extension extending from the first pad; wherein the first extension contacts the transparent conductive layer through the first opening and covers the entire first opening.Type: ApplicationFiled: May 18, 2020Publication date: November 26, 2020Inventors: Jhih Yong Yang, Hsin Ying Wang, De Shan Kuo
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Patent number: 10784427Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.Type: GrantFiled: September 23, 2019Date of Patent: September 22, 2020Assignee: EPISTAR CORPORATIONInventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
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Publication number: 20200243598Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: ApplicationFiled: January 23, 2020Publication date: July 30, 2020Inventors: Po-Shun CHIU, Tsung-Hsun CHIANG, Liang-Sheng CHI, Jing JIANG, Jie CHEN, Tzung-Shiun YEH, Hsin-Ying WANG, Hui-Chun YEH, Chien-Fu SHEN
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Publication number: 20200044116Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,Type: ApplicationFiled: August 1, 2019Publication date: February 6, 2020Inventors: Chao-Hsing CHEN, Cheng-Lin LU, Chih-Hao CHEN, Chi-Shiang HSU, I-Lun MA, Meng-Hsiang HONG, Hsin-Ying WANG, Kuo-Ching HUNG, Yi-Hung LIN
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Publication number: 20200020839Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.Type: ApplicationFiled: September 23, 2019Publication date: January 16, 2020Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
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Patent number: 10505092Abstract: A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.Type: GrantFiled: January 18, 2018Date of Patent: December 10, 2019Assignee: EPISTAR CORPORATIONInventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
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Patent number: 10396243Abstract: A light-emitting device includes: a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side and the second side; a light-emitting stack, comprising a lower semiconductor layer, an upper semiconductor layer, and an active layer between the lower semiconductor layer and the upper semiconductor layer; a first electrode formed on the lower semiconductor layer, comprising a first electrode pad and a first extension electrode; a second electrode formed on the upper semiconductor layer, comprising a second electrode pad and a second extension electrode; and a first current blocking layer formed between the lower semiconductor layer and the first electrode pad, wherein the first current blocking layer comprises a top surface and side surfaces; wherein the first electrode pad covers the top surface and the side surfaces of the first current blocking layer and contacts the lower semiconductor layer.Type: GrantFiled: July 9, 2018Date of Patent: August 27, 2019Assignee: Epistar CorporationInventors: Chien-Kai Chung, Po-Shun Chiu, Hsin-Ying Wang, De-Shan Kuo, Tsun-Kai Ko, Yu-Ting Huang
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Publication number: 20190189850Abstract: A light-emitting device, includes a first semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, including a second core region under the second pad electrode and a extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the extending region; wherein a contour of the second core region has a shape different from that of the second pad electrode; wherein the transparent conductive layer includes a first opening having a width wider than a width of the second pad electrode, wherein the second finger electrode includes a portion extending from thType: ApplicationFiled: December 14, 2018Publication date: June 20, 2019Inventors: Hsin-Ying WANG, Hui-Chun YEH, Li-Ming CHANG, Chien-Fu SHEN, Chen OU
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Publication number: 20190035846Abstract: Disclosed herein is a light-emitting device.Type: ApplicationFiled: July 17, 2018Publication date: January 31, 2019Inventors: Chien-Fu SHEN, Chao-Hsing CHEN, Tsun-Kai KO, Schang-Jing HON, Sheng-Jie HSU, De-Shan KUO, Hsin-Ying WANG, Chiu-Lin YAO, Chien-Fu HUANG, Hsin-Mao LIU, Chien-Kai CHUNG
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Publication number: 20180315889Abstract: A light-emitting device includes: a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side and the second side; a light-emitting stack, comprising a lower semiconductor layer, an upper semiconductor layer, and an active layer between the lower semiconductor layer and the upper semiconductor layer; a first electrode formed on the lower semiconductor layer, comprising a first electrode pad and a first extension electrode; a second electrode formed on the upper semiconductor layer, comprising a second electrode pad and a second extension electrode; and a first current blocking layer formed between the lower semiconductor layer and the first electrode pad, wherein the first current blocking layer comprises a top surface and side surfaces; wherein the first electrode pad covers the top surface and the side surfaces of the first current blocking layer and contacts the lower semiconductor layer.Type: ApplicationFiled: July 9, 2018Publication date: November 1, 2018Inventors: Chien-Kai CHUNG, Po-Shun CHIU, Hsin-Ying WANG, De-Shan KUO, Tsun-Kai KO, Yu-Ting HUANG
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Patent number: D853340Type: GrantFiled: December 20, 2017Date of Patent: July 9, 2019Assignee: EPISTAR CORPORATIONInventors: Hsin Ying Wang, Tzung Shiun Yeh, Cheng Yu Li, Chien Fu Shen