Abstract: An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.

Abstract: An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall.

Abstract: A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.

Abstract: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive la

Abstract: A method of forming a light emitting diode is provided. The method includes providing a growth substrate; sequentially forming a sacrificial layer and an epitaxial layer on the growing substrate; forming one or more epitaxial layer openings penetrating the epitaxial layer and exposing the sacrificial layer; forming a supporting layer on the epitaxial layer, the supporting layer having one or more supporting layer openings penetrating the supporting layer and joining the epitaxial layer openings; and selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer.