Abstract: An optical data link using a single optical fiber for bi-directional optical communication. Bi-direction optical transceivers couple to the single optical fiber having two optical channels of communication. An optical subassembly in each optical transceiver to multiplex an optical transmit signal and demultiplex an optical receive signal within the bi-direction optical transceiver. The optical subassembly includes an optical block with an optical filter to reflect at least one wavelength of light and to allow passage of another wavelength of light. Embodiments of the optical block with the optical filter are described.

Abstract: A high-speed optical data link includes a system circuit board, a first ASIC coupled to convey electrical information to and from up level data management circuits, and a second ASIC electrically coupled to the first ASIC. A fiber optic module mounted on the system circuit board including a receiver, a transmitter and the second ASIC. The receiver includes a photo-diode positioned to receive optical signals, a trans-impedance amplifier electrically coupled to the photo diode, and a post-amplifier electrically coupled to the trans-impedance amplifier and to the second ASIC. The transmitter includes a laser positioned to convey optical signals to a remote optical receiver and a laser driver electrically coupled to the laser and to the second ASIC.

Abstract: Monolithic integrated vertical-cavity surface-emitting laser devices are disclosed including an edge-emitting semiconductor pump laser (PL), an optically-pumped vertical-cavity surface-emitting laser (VCSEL), and a means for deflecting and shaping the output beam of the pump laser to optically excite the VCSEL. The optically-pumped VCSEL structure may be adapted to include a resonant cavity with multiple fixed wavelengths, or a resonance cavity whose wavelength is continuously tunable. Wafer level manufacturing techniques are also disclosed.

Abstract: A vertical cavity surface emitting laser includes a first mirror region forming a first distributed Bragg reflector, a first cladding region, an active region, a second cladding region including a high electrical resistance implanted region positioned to define a current path, a second mirror region, and a current spreading region. A first electrical contact is positioned on the current spreading region and a second electrical contact is positioned to conduct electrical current in circuit with the first electrical contact through the current path. The current spreading region and the second mirror region cooperate to produce substantially uniform current distribution in the current path. A third mirror region is positioned on the current spreading region. The second and third mirror regions cooperate to provide a complete distributed Bragg reflector.

Abstract: Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.

Abstract: Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.

Abstract: An optical data link using a single optical fiber for bi-directional optical communication. Bi-direction optical transceivers couple to the single optical fiber having two optical channels of communication. An optical subassembly in each optical transceiver to multiplex an optical transmit signal and demultiplex an optical receive signal within the bi-direction optical transceiver. The optical subassembly includes an optical block with an optical filter to reflect at least one wavelength of light and to allow passage of another wavelength of light. Embodiments of the optical block with the optical filter are described.

Abstract: A high-speed optical data link includes a system circuit board, a first ASIC coupled to convey electrical information to and from up level data management circuits, and a second ASIC electrically coupled to the first ASIC. A fiber optic module mounted on the system circuit board including a receiver, a transmitter and the second ASIC. The receiver includes a photo-diode positioned to receive optical signals, a trans-impedance amplifier electrically coupled to the photo diode, and a post-amplifier electrically coupled to the trans-impedance amplifier and to the second ASIC. The transmitter includes a laser positioned to convey optical signals to a remote optical receiver and a laser driver electrically coupled to the laser and to the second ASIC.

Abstract: A tunable vertical cavity surface emitting laser (VCSEL) is formed by providing a gap in its laser cavity that can be adjusted to vary the gap distance therein to change the resonance of the cavity and the wavelength of photons that are generated. A pump laser provides a pump source of photons that are coupled into the laser cavity of the vertical cavity surface emitting laser. The vertical cavity surface emitting laser is coupled to a piezo-electric submount to form the gap in the laser cavity. The gap distance is adjusted to tune the vertical cavity surface emitting laser around its center wavelength by applying a voltage (i.e., an electric field) across the piezo-electric submount which causes mechanical stress therein. Alternate embodiments are disclosed including a joined unit of elements to form the tunable vertical cavity surface emitting laser as well as a system of elements to form the tunable vertical cavity surface emitting laser.

Abstract: A high-speed optical data link includes a system circuit board, a first ASIC coupled to convey electrical information to and from up level data management circuits, and a second ASIC electrically coupled to the first ASIC. A fiber optic module mounted on the system circuit board including a receiver, a transmitter and the second ASIC. The receiver includes a photo-diode positioned to receive optical signals, a trans-impedance amplifier electrically coupled to the photo diode, and a post-amplifier electrically coupled to the trans-impedance amplifier and to the second ASIC. The transmitter includes a laser positioned to convey optical signals to a remote optical receiver and a laser driver electrically coupled to the laser and to the second ASIC.

Abstract: A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.

Abstract: Semiconductor lasers having a narrow bandwidth distributed Bragg reflector (DBR). The narrow bandwidth distributed Bragg reflector reflects photons over a narrow wavelength range for amplification within the laser cavity. Photons outside the narrow wavelength range are not reflected back into the laser cavity and are therefore not amplified. The narrow bandwidth distributed Bragg reflector can be formed of semiconductor materials or dielectric materials. The narrow bandwidth distributed Bragg reflector is included as part of folded cavity surface emitting lasers and edge emitting lasers. Photons within the narrow wavelength range of the narrow bandwidth distributed Bragg reflector reflects are of a relatively long wavelength to improve efficiency of communication over fiber optic cables.

Abstract: A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.

Abstract: Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.

Abstract: An integrated optically pumped vertical cavity surface emitting laser (VCSEL) is formed by integrating an electrically pumped in-plane semiconductor laser and a vertical cavity surface emitting laser together with a beam steering element formed with the in-plane semiconductor laser. The in-plane semiconductor laser can be a number of different types of in-plane lasers including an edge emitting laser, an in-plane surface emitting laser, or a folded cavity surface emitting laser. The in-plane semiconductor laser optically pumps the VCSEL to cause it to lase. The in-plane semiconductor laser is designed to emit photons of relatively short wavelengths while the VCSEL is designed to emit photons of relatively long wavelengths. The in-plane semiconductor laser and the VCSEL can be coupled together in a number of ways including atomic bonding, wafer bonding, metal bonding, epoxy glue or other well know semiconductor bonding techniques. The beam steering element can be an optical grating or a mirrored surface.

Abstract: Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.

Abstract: Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.

Abstract: Semiconductor lasers are formed by integrating an electrically pumped semiconductor laser, a beam steering element and a vertical cavity surface emitting laser (VCSEL) together. The electrically pumped semiconductor laser is modulated to modulate a pump beam of photons at a first wavelength. The beam steering element directs the pump beam to the VCSEL to provide optical pumping. The VCSEL receives the pump beam of photons at the first wavelength and is stimulated to emit photons of a laser beam at a second wavelength longer than the first. In embodiments, index guiding is provided in the VCSEL to improve the optical pumping and emission efficiencies when the pump beam is modulated at high frequencies. Embodiments of the beam steering element include a silicon bench, a polymer element, and a facet included in the edge emitting laser and an external mirror. Embodiments of index guiding include an air gap to form a mesa and an oxide confinement ring shaped layer.

Abstract: Modulated integrated optically pumped vertical cavity surface emitting lasers are formed by integrating an electrically pumped semiconductor laser and a vertical cavity surface emitting laser (VCSEL) together with a means of direct modulation of the electrically pumped semiconductor laser. In the preferred embodiments, the electrically pumped semiconductor laser is a type of folded cavity surface emitting laser (FCSEL). In a number of embodiments, the FCSEL is partitioned into two sections by a gap in material layers. In these embodiments, one section of the FCSEL is biased so as to maintain the generation of photons at a constant power level to pump the optically pumped VCSEL while the second section of the FCSEL is used for modulation and causes the optically pumped VCSEL to be modulated above the threshold. In another embodiment, an electric-absorption modulator is sandwiched between an electrically pumped FCSEL and an optically pumped VCSEL.

Abstract: An integrated optically pumped vertical cavity surface emitting laser (VCSEL) is formed by integrating an electrically pumped in-plane semiconductor laser and a vertical cavity surface emitting laser together with a beam steering element formed with the in-plane semiconductor laser. The in-plane semiconductor laser can be a number of different types of in-plane lasers including an edge emitting laser, an in-plane surface emitting laser, or a folded cavity surface emitting laser. The in-plane semiconductor laser optically pumps the VCSEL to cause it to lase. The in-plane semiconductor laser is designed to emit photons of relatively short wavelengths while the VCSEL is designed to emit photons of relatively long wavelengths. The in-plane semiconductor laser and the VCSEL can be coupled together in a number of ways including atomic bonding, wafer bonding, metal bonding, epoxy glue or other well know semiconductor bonding techniques. The beam steering element can be an optical grating or a mirrored surface.