Abstract: Some embodiments relate to a semiconductor structure including a method for forming a semiconductor structure. The method includes forming a lower conductive structure within a first dielectric layer over a substrate. An upper dielectric structure is formed over the lower conductive structure. The upper dielectric structure comprises sidewalls defining an opening over the lower conductive structure. A first liner layer is selectively deposited along the sidewalls of the upper dielectric structure. A conductive body is formed within the opening and over the lower conductive structure. The conductive body has a bottom surface directly overlying a middle region of the lower conductive structure. The first layer is laterally offset from the middle region of the lower conductive structure by a non-zero distance.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises an interlayer dielectric (ILD) layer disposed over a substrate; a first conductive feature at least partially embedded in the ILD layer; a dielectric layer disposed over and aligned with the ILD layer, wherein a top surface of the dielectric layer is above a top surface of the first conductive feature; an etch stop layer (ESL) disposed over the dielectric layer and over the first conductive feature; and a second conductive feature disposed on the first conductive feature, wherein the second conductive feature includes a first portion having a first bottom surface contacting a top surface of the first conductive feature and a second portion having a second bottom surface contacting a top surface of the dielectric layer.

Abstract: In the present disclosure, a semiconductor structure includes an Mx-1 layer including a first dielectric layer and first metal features, wherein the first metal features include a first set of first metal features in a first region and a second set of first metal features in a second region, wherein the first set has a first pattern density and the second set has a second pattern density being greater than the first pattern density. The structure further includes a Vx layer disposed over the Mx-1 layer, the Vx layer including first vias contacting the first set of the first metal features. The structure further includes an Mx layer disposed over the Vx layer, the Mx layer including a fuse element, wherein the fuse element has a first thickness in the first region less than a second thickness in the second region.

Abstract: Some embodiments relate to a semiconductor structure including a first inter-level dielectric (ILD) layer overlying a substrate. A lower conductive structure is disposed within the first ILD layer. A capping layer continuously extends along a top surface of the lower conductive structure. An upper ILD structure overlies the lower conductive structure. A conductive body is disposed within the upper ILD structure. A bottom surface of the conductive body directly overlies the top surface of the lower conductive structure. A width of the bottom surface of the conductive body is less than a width of the top surface of the lower conductive structure. A diffusion barrier layer is disposed between the conductive body and the upper ILD structure. The diffusion barrier layer is laterally offset from a region disposed directly between the bottom surface of the conductive body and the top surface of the lower conductive structure by a non-zero distance.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises an interlayer dielectric (ILD) layer disposed over a substrate; a first conductive feature at least partially embedded in the ILD layer; a dielectric layer disposed over and aligned with the ILD layer, wherein a top surface of the dielectric layer is above a top surface of the first conductive feature; an etch stop layer (ESL) disposed over the dielectric layer and over the first conductive feature; and a second conductive feature disposed on the first conductive feature, wherein the second conductive feature includes a first portion having a first bottom surface contacting a top surface of the first conductive feature and a second portion having a second bottom surface contacting a top surface of the dielectric layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first dielectric layer over the substrate. The semiconductor device structure also includes a first conductive feature and a second conductive feature surrounded by the first dielectric layer and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a resistive element having a first portion over the second dielectric layer and a second portion penetrating through the second dielectric layer to be electrically connected to the first conductive feature. In addition, the semiconductor device structure includes a conductive via penetrating through the second dielectric layer to be electrically connected to the second conductive feature. The second portion of the resistive element is wider than the conductive via.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a dielectric layer over a semiconductor substrate and forming a conductive line in the dielectric layer. The method also includes forming an etch stop layer over the dielectric layer and the conductive line and patterning the etch stop layer to form a contact opening exposing a portion of the conductive line. The method further includes forming a resistive layer over the etch stop layer, wherein the resistive layer extends into the contact opening. In addition, the method includes patterning the resistive layer to form a resistive element.

Abstract: The present disclosure relates an integrated chip. The integrated chip includes a first interconnect disposed within an inter-level dielectric (ILD) structure over a substrate. A barrier layer is disposed along sidewalls of the ILD structure. The barrier layer has sidewalls defining an opening over the first interconnect. A second interconnect is disposed on the barrier layer. The second interconnect extends through the opening in the barrier layer and to the first interconnect.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) in which cavities separate wires of an interconnect structure. For example, a conductive feature overlies a substrate, and an intermetal dielectric (IMD) layer overlies the conductive feature. A first wire and a second wire neighbor in the IMD layer and respectively have a first sidewall and a second sidewall that face each other while being separated from each other by the IMD layer. Further, the first wire overlies and borders the conductive feature. A first cavity and a second cavity further separate the first and second sidewalls from each other. The first cavity separates the first sidewall from the IMD layer, and the second cavity separates the second sidewall from the IMD layer. The cavities reduce parasitic capacitance between the first and second wires and hence resistance-capacitance (RC) delay that degrades IC performance.

Abstract: Some embodiments relate to a semiconductor structure including a first inter-level dielectric (ILD) layer overlying a substrate. A lower conductive structure is disposed within the first ILD layer. A capping layer continuously extends along a top surface of the lower conductive structure. An upper ILD structure overlies the lower conductive structure. A conductive body is disposed within the upper ILD structure. A bottom surface of the conductive body directly overlies the top surface of the lower conductive structure. A width of the bottom surface of the conductive body is less than a width of the top surface of the lower conductive structure. A diffusion barrier layer is disposed between the conductive body and the upper ILD structure. The diffusion barrier layer is laterally offset from a region disposed directly between the bottom surface of the conductive body and the top surface of the lower conductive structure by a non-zero distance.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a first resistive element and a second resistive element over the semiconductor substrate. A topmost surface of the second resistive element is higher than a topmost surface of the first resistive element. The semiconductor device structure also includes a first conductive feature and a second conductive feature electrically connected to the first resistive element. The second resistive element is between and electrically isolated from the first conductive feature and the second conductive feature. The semiconductor device structure further includes a first dielectric layer surrounding the first conductive feature and the second conductive feature.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first resistive element and a second resistive element over the semiconductor substrate. The semiconductor device structure also includes a first conductive feature electrically connected to the first resistive element and a second conductive feature electrically connected to the second resistive element. The semiconductor device structure further includes a dielectric layer surrounding the first conductive feature and the second conductive feature.

Abstract: In the present disclosure, a semiconductor structure includes an Mx-1 layer including a first dielectric layer and first metal features, wherein the first metal features include a first set of first metal features in a first region and a second set of first metal features in a second region, wherein the first set has a first pattern density and the second set has a second pattern density being greater than the first pattern density. The structure further includes a Vx layer disposed over the Mx-1 layer, the Vx layer including first vias contacting the first set of the first metal features. The structure further includes an Mx layer disposed over the Vx layer, the Mx layer including a fuse element, wherein the fuse element has a first thickness in the first region less than a second thickness in the second region.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises an interlayer dielectric (ILD) layer disposed over a substrate; a first conductive feature at least partially embedded in the ILD layer; a dielectric layer disposed over and aligned with the ILD layer, wherein a top surface of the dielectric layer is above a top surface of the first conductive feature; an etch stop layer (ESL) disposed over the dielectric layer and over the first conductive feature; and a second conductive feature disposed on the first conductive feature, wherein the second conductive feature includes a first portion having a first bottom surface contacting a top surface of the first conductive feature and a second portion having a second bottom surface contacting a top surface of the dielectric layer.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a dielectric layer over a semiconductor substrate and forming a conductive line in the dielectric layer. The method also includes forming an etch stop layer over the dielectric layer and the conductive line and patterning the etch stop layer to form a contact opening exposing a portion of the conductive line. The method further includes forming a resistive layer over the etch stop layer, wherein the resistive layer extends into the contact opening. In addition, the method includes patterning the resistive layer to form a resistive element.

Abstract: Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and a first dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive feature in the first dielectric layer and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a resistive element electrically connected to the conductive feature. A first portion of the resistive element is over the dielectric layer, and a second portion of the resistive element extends towards the conductive feature.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first resistive element and a second resistive element over the semiconductor substrate. The semiconductor device structure also includes a first conductive feature electrically connected to the first resistive element and a second conductive feature electrically connected to the second resistive element. The semiconductor device structure further includes a dielectric layer surrounding the first conductive feature and the second conductive feature.

Abstract: Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and a first dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive feature in the first dielectric layer and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a resistive element electrically connected to the conductive feature. A first portion of the resistive element is over the dielectric layer, and a second portion of the resistive element extends towards the conductive feature.

Abstract: A method includes generating a plurality of multiple patterning decompositions associated with a layout of an integrated circuit. Each of the plurality of multiple patterning decompositions includes a first pattern associated with a first mask, a second pattern associated with a second mask, the first mask and the second mask being two masks of a multiple patterning mask set, a width value associated with at least one of the first pattern or the second pattern, and a first spacing value between the first pattern and the second pattern. A file is generated comprising a plurality of dielectric constant values associated with the plurality of multiple patterning decompositions that are based on the width values and the first spacing values.

Abstract: A method includes generating a plurality of multiple patterning decompositions associated with a layout of an integrated circuit. Each of the plurality of multiple patterning decompositions includes a first pattern associated with a first mask, a second pattern associated with a second mask, the first mask and the second mask being two masks of a multiple patterning mask set, a width value associated with at least one of the first pattern or the second pattern, and a first spacing value between the first pattern and the second pattern. A file is generated comprising a plurality of dielectric constant values associated with the plurality of multiple patterning decompositions that are based on the width values and the first spacing values.