Abstract: A method of fabricating a stacked gate dielectric layer. First, a semiconductor substrate having a native oxide thereon is provided. Next, a first gas containing hydrogen is introduced on the semiconductor substrate. A nitride is deposited on the native oxide. A second gas containing nitrous oxide is introduced on the semiconductor substrate. A third gas containing nitrogen oxide is introduced on the semiconductor substrate. Finally, an annealing treatment is performed.

Abstract: A magnetocaloric refrigeration device, placed in a controllable magnetic field, includes a heat release/absorption module. The heat release/absorption module includes a magnetocaloric working unit and at least one heat pipe. The magnetocaloric working unit is made of a magnetocaloric material. The temperature of the unit changes as the magnetic field is applied or removed. The heat pipe includes evaporation and condensation portions respectively extending from top and bottom of the magnetocaloric working unit. When a magnetic field is applied to the magnetocaloric working unit to absorb heat, the lower condensation portion of the heat pipe transfers heat upward to the magnetocaloric working unit. When the magnetic field is removed from the magnetocaloric working unit to release heat, the heat from the magnetocaloric working unit is transferred to the outside through the upper heat release portion. The magnetocaloric refrigeration device has advantages of simple structure, low production cost, and small size.

Abstract: A test key disposed on a scribe line of a wafer. The test key includes: two active areas disposed on the substrate; two first deep trench capacitors disposed on the substrate outside the two active areas; a rectangular active word line disposed on the substrate covering the first deep trench capacitors and the active areas; first and second passing word lines disposed on one side of the rectangular active word line and across the parallel active areas; a third passing word line disposed on another side of the rectangular active word line and across another end of the two active areas; two second deep trench capacitors disposed on the substrate under where the two first passing word lines overlap the two active areas; and four contacts disposed on the first active areas between the first and second word lines and between the third and the rectangular active word line.

Abstract: A method of etching a metal line. A substrate with a metal layer to be etched is provided, on which an amorphous carbon doped layer is formed over the metal layer by plasma enhanced chemical vapor deposition (PECVD). A resist layer is formed over the amorphous carbon doped layer, and the resist layer is patterned to define a resist mask. The amorphous carbon doped layer is etched to define a hardmask, the resist mask is stripped, and the metal layer not covered by the hardmask is etched to form a metal line for forming an interconnect.

Abstract: A method of fabricating a well-filled STI Structure in a semiconductor substrate. A trench is formed in the semiconductor substrate. A liner oxide and a liner nitride are formed on the bottom and sidewall of the trench subsequently. A HDP oxide layer is deposited in the trench conformally to fill a portion of the trench. A layer of poly-silicon is deposited over the HDP oxide layer conformally. The semiconductor substrate is subjected to a thermal treatment to oxidize the poly-silicon. The surface of the semiconductor substrate is planarized to form a shallow trench isolation structure. The trench is well filled by the oxidized poly-silicon and the HDP oxide without voids and seams.

Abstract: A method of etching a low-k dielectric layer. A substrate having a low-k dielectric layer to be etched, on which an amorphous carbon doped layer is formed over the low-k dielectric layer by plasma enhanced chemical vapor deposition (PECVD), a resist layer is formed over the amorphous carbon doped layer , and the resist layer is patterned to define a first opening thereby forming a resist mask. The amorphous carbon doped layer is etched to define a second opening, thereby forming a hardmask, the resist mask is stripped, and the low-k dielectric layer not covered by the hardmask is etched to form a third opening as a trench or via.

Abstract: A diluter includes a filtering assembly and an intake assembly. The filtering assembly has a top cap that is provided with a first connector and a first through hole defined through the top cap, a lower cap having a second connector, a second through hole defined through the lower cap and an assembly hole defined to communicate with the second through hole, and a tubular filter securely connected between the top cap and the lower cap to form a mixing zone in communication with the first and the second through holes. The intake assembly having a first end and a second end, the first end being defined with a receiving hole to correspond to the first connector and the second end being provided with an inlet to communicate the first end and the second end.

Abstract: A diluter includes a filtering assembly and an intake assembly. The filtering assembly has a top cap that is provided with a first connector and a first through hole defined through the top cap, a lower cap having a second connector, a second through hole defined through the lower cap and an assembly hole defined to communicate with the second through hole, and a tubular filter securely connected between the top cap and the lower cap to form a mixing zone in communication with the first and the second through holes. The intake assembly having a first end and a second end, the first end being defined with a receiving hole to correspond to the first connector and the second end being provided with an inlet to communicate the first end and the second end.

Abstract: A method of forming a STI structure. First, a substrate having a trench is provided. Next, a conformable silicon oxide layer is grown on the surface of the trench by wet oxidation using single wafer process to serve as a liner oxide layer. Thereafter, the substrate and the silicon oxide layer is in-situ annealed. Finally, an insulating layer is completely filled into the trench.

Abstract: A static resistant reticle comprises a substrate and a patterning layer and is covered by an antistatic conductive film of quaternary amine (R4N)+Cl−. A pellicle structure comprising an optically transparent membrane tightly stretched on a frame is also coated by an antistatic electro conductive film of a similar material. The reticle with the pellicle form a shielded structure isolating the reticle from ESD.

Abstract: A method of forming a STI structure. First, a substrate having a trench is provided. Next, a conformable silicon oxide layer is grown on the surface of the trench by wet oxidation using single wafer process to serve as a liner oxide layer. Thereafter, the substrate and the silicon oxide layer is in-situ annealed. Finally, an insulating layer is completely filled into the trench.

Abstract: An air treatment apparatus has a housing and a vent cover. The housing has a treatment element, at least one entrance and a fan secured in the hollow housing and facing the entrance. The vent cover is detachably and replaceably attached to the housing. At least one vent is selectively defined in one of the top face and the front face of the vent cover. With such an air treatment apparatus, the vent cover can be interchanged between a jet-flow one or a laminar-flow one.

Abstract: A test key disposed on a scribe line of a wafer. The test key includes: two active areas disposed on the substrate; two first deep trench capacitors disposed on the substrate outside the two active areas; a rectangular active word line disposed on the substrate covering the first deep trench capacitors and the active areas; first and second passing word lines disposed on one side of the rectangular active word line and across the parallel active areas; a third passing word line disposed on another side of the rectangular active word line and across another end of the two active areas; two second deep trench capacitors disposed on the substrate under where the two first passing word lines overlap the two active areas; and four contacts disposed on the first active areas between the first and second word lines and between the third and the rectangular active word line.

Abstract: A pod for transporting reticles is made with a reticle support that has a &pgr;-shape and is provided with pins, whose arrangement matches the location of chrome-free areas on a reticle base. Due to that, the pins, when supporting the reticle, come into contact with the reticle in chrome-free areas thereof. Thus, scratching the metallic areas and releasing metallic particles is prevented from occurring.

Abstract: A method of forming a shallow trench isolation has the steps of: forming a plurality of trenches in a semiconductor substrate; forming an oxide liner on the bottom and sidewall of each trench; and thermal annealing in a nitrogen-containing atmosphere to dope nitrogen elements in the oxide liner. Thus, a nitrogen-rich layer is formed at the interface between the oxide liner and the semiconductor substrate.

Abstract: A rolling air flow sluice valve is installed in an air passage of an air supply apparatus, and consists of a plurality of plate elements connected together. The air flow sluice valve is pliable and may be rolled. It is movable across the cross section of the air passage, and may be driven by a traction mechanism to selectively block or alter the air flow passage to achieve the objects of blocking air flow, and changing air flow direction and air outflow patterns.

Abstract: An air treatment apparatus has a housing and a vent cover. The housing has a treatment element, at least one entrance and a fan secured in the hollow housing and facing the entrance. The vent cover is detachably and replaceably attached to the housing. At least one vent is selectively defined in one of the top face and the front face of the vent cover. With such an air treatment apparatus, the vent cover can be interchanged between a jet-flow one or a laminar-flow one.

Abstract: An air conditioning module applicable to a partition panel is disclosed herein. The air conditioning module includes a heat exchanger and a blower mounted inside the panel. The partition panel is suitable for assembling a modular personal working compartment in an office. A heat transfer medium is provided to the air conditioning module for generating cooled or heated air for the personal working space. The operation of the air conditioning module can accommodate individual needs, as well as save energy.

Abstract: A mask pattern having an anti-ESD ring which protects the pattern region of the mask from damage due to ESD events. The anti-ESD ring has a space between two broad border regions formed of an opaque metal such as chrome. ESD fingers, or rods extend from one of the border regions to within a small gap of the other border region. These ESD fingers act as lightning rods so that ESD events preferably occur across this small gap between the ESD fingers and one of the border regions. The ESD fingers are small enough so that any metal transferred across the gap in an ESD event is very small. The gap is located so that any metal transferred is far away from the pattern region of the mask. The ESD fingers confine ESD events to a preferred region of the mask and damage to the pattern region is avoided.

Abstract: An electrostatic discharge-free container equipped with a metal shield for holding an insulating article therein is described. In the container, an electrically conductive layer substantially covers a bottom lid made of a non-conductive material so as to sufficiently shield the insulating article from electrostatic discharge damages. The present invention novel ESD-free container may further be provided with a metal knob situated in a top lid of the container, or be provided with a metal enclosure positioned inside the container between the top lid and the insulating article. The metal layer that substantially overlaps the bottom lid may be injection molded as an insert in the bottom lid, or may be coated or plated on the bottom lid. The present invention novel ESD-free container eliminates any electrostatic discharge from occurring on a reticle plate and thus avoiding any potential damages.