Abstract: A test method is for testing a decision feedback equalization (DFE) of a memory device is provided. The memory device includes a memory bank. The test method includes: providing a first test data pattern having a first data transition frequency and a second test data pattern having a second data transition frequency different from the first data transition frequency; writing the first test data pattern into a first memory section of the memory bank with a first DFE; writing the second test data pattern into a second memory section of the memory bank with the first DFE; reading a first reading data pattern stored in the first memory section and a second reading data pattern stored in the second memory section; and generating a test result signal according to the first reading data pattern and the second reading data pattern.

Abstract: An integrated circuit (IC) flip-chip and a light-emitting device are provided. The IC flip-chip includes a chip body, a plurality of metal pads, and a plurality of flip-chip pads. The chip body has a surface. The metal pads are disposed on the surface of the chip body. The flip-chip pads are disposed on the metal pads, and the flip-chip pads are electrically coupled to the metal pads through a redistribution layer therebetween. A distribution of the flip-chip pads is more even than a distribution of the metal pads.

Abstract: A test method is for testing a decision feedback equalization (DFE) of a memory device is provided. The memory device includes a memory bank. The test method includes: providing a first test data pattern having a first data transition frequency and a second test data pattern having a second data transition frequency different from the first data transition frequency; writing the first test data pattern into a first memory section of the memory bank with a first DFE; writing the second test data pattern into a second memory section of the memory bank with the first DFE; reading a first reading data pattern stored in the first memory section and a second reading data pattern stored in the second memory section; and generating a test result signal according to the first reading data pattern and the second reading data pattern.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

Abstract: A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

Abstract: A high-dynamic-range (HDR) detecting system includes a camera module comprising an image sensor; and a vision module that receives data generated by the camera module and accordingly transmits feedback to the camera module. The camera module comprises a multiple-exposure unit that provides different exposure settings, according to which a plurality of images are captured by the image sensor. The vision module comprises an object detection device that detects objects in the plurality of images, thereby resulting in object detection results as metadata.

Abstract: A structured-light scanning system with thermal compensation includes a structured-light projector that generates a predetermined projected pattern of light, which is then projected onto and reflected from an object, thereby resulting in a reflected pattern of light; an image sensor that captures the reflected pattern of light; and a digital processing unit that generates a depth map according to the reflected pattern of light and a compensated projected pattern associated with a current temperature.

Abstract: Systems and methods are provided that may be implemented in a real time manner by an information handling system (the “client system”) to monitor one or more characteristics of a voice over internet protocol (VOIP) discussion, to use these monitored VOIP characteristics to identify one or more condition/s in real time as they are identified to occur during the current VOIP discussion, and to determine to take one or more automatic actions based on the identified VOIP condition/s so as to inform and/or alert a current human user of the client system to the occurrence of the identified VOIP condition/s as they occur.

Abstract: A container includes a bottom box and a top lid. The bottom box includes a containing space adapted to contain the contents. The bottom box has a tilted shape wherein the bottom box has one side height greater than another side height. The top lid includes an integrally formed lens and formed with a plurality of air holes on a top surface thereof. The top lid is removably assembled with the bottom box.

Abstract: A container includes a bottom box and a top lid. The bottom box includes a containing space adapted to contain the contents. The bottom box has a tilted shape wherein the bottom box has one side height greater than another side height. The top lid includes an integrally formed lens and formed with a plurality of air holes on a top surface thereof. The top lid is removably assembled with the bottom box.

Abstract: The invention unexpectedly found that an isolated and modified QPSC population has multi-potentiality, including: osteoblasts (bone cells), chondrocytes (cartilage cells), and adipocytes (fat cells). The QPSC population of the invention features a desirable immunomodulation ability, including inducing, enhancing, or suppressing an immune response and thus has potential value in the prevention and/or treatment of various immune diseases/disorders/conditions. The invention has effective homing ability and regulation ability in complement-dependent cytotoxicity, including the ability to block the activation of host complements and direct migration to the target area and the ability to enhance cell viability, and thus offers better cell protection and therapeutic efficacy in vivo in the prevention and/or treatment of various acute tissue injury, ischemic or degenerative diseases/disorders/conditions.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: Systems and methods are provided that may be implemented in a real time manner by an information handling system (the “client system”) to monitor one or more characteristics of a voice over internet protocol (VOIP) discussion, to use these monitored VOIP characteristics to identify one or more condition/s in real time as they are identified to occur during the current VOIP discussion, and to determine to take one or more automatic actions based on the identified VOIP condition/s so as to inform and/or alert a current human user of the client system to the occurrence of the identified VOIP condition/s as they occur.

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.