Patents by Inventor Hsueh-Shih Chen

Hsueh-Shih Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10713977
    Abstract: Disclosures of the present invention describe an anti-counterfeit security verification method and device using quantum dots, wherein the anti-counterfeit security verification device consists of a base, a plurality of receiving recesses formed on the base, and a plurality of optical members. After being illuminated by a short-wavelength light, the optical members irradiate a plurality of photoluminescent light, and each of the photoluminescent lights comprises at least one wavelength value, one (x, y) coordinate position, one value of integrated photoluminescence intensity area, one photoluminescence color, and one color scale value.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: July 14, 2020
    Assignee: National Tsing Hua University
    Inventor: Hsueh-Shih Chen
  • Publication number: 20200202751
    Abstract: Disclosures of the present invention describe an anti-counterfeit security verification method and device using quantum dots, wherein the anti-counterfeit security verification device consists of a base, a plurality of receiving recesses formed on the base, and a plurality of optical members. After being illuminated by a short-wavelength light, the optical members irradiate a plurality of photoluminescent light, and each of the photoluminescent lights comprises at least one wavelength value, one (x, y) coordinate position, one value of integrated photoluminescence intensity area, one photoluminescence color, and one color scale value.
    Type: Application
    Filed: January 3, 2019
    Publication date: June 25, 2020
    Inventor: Hsueh-Shih Chen
  • Patent number: 10670231
    Abstract: The present invention discloses a light conversion material with light reflective structure, comprises: a transparent substrate, a plurality of first light conversion films and second light conversion films. Particularly, the second light conversion film is disposed between two of the first light conversion films, and has a refractive index greater than that of the first light conversion film. By such design, when a short-wavelength light is incident on the first light conversion films and the second light conversion films, parts of the short-wavelength light have a reflected light forming at the junction between the two light conversion films, and the reflected light would bounce back to the first light conversion film and/or the second light conversion film, thereby those unconverted short-wavelength light being prevented from directly passing the light conversion material. Briefly speaking, this light conversion material exhibits an outstanding performance on short-wavelength light recycling.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: June 2, 2020
    Assignee: National Tsing Hua University
    Inventor: Hsueh-Shih Chen
  • Patent number: 10611957
    Abstract: A quantum dot luminophore comprising at least one luminescent core, a spacer layer, an encapsulation layer, and a plurality of quantum dots is disclosed. The luminescent core is designed to emit a red light after being excited by an incident blue light, and the quantum dots are configured to irradiate a green light by the illumination of the blue light and/or the red light. In the present invention, the quantum dots are particularly used to cover or surround the luminescent core for solving the light re-absorption. By such arrangement, even though part of incident blue light (about 10-30%) may be reflected by the luminescent core made of phosphor materials, the reflected blue light still can also be recycled by the quantum dots surrounding the luminescent core, such that the light conversion efficiency and emission intensity of the luminescent core are hence increased because the loss of blue light is decreased.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: April 7, 2020
    Assignee: TSING YAN TECHNOLOGY CO., LTD.
    Inventors: Ying-Fang Chen, Hsueh-Shih Chen
  • Publication number: 20190322931
    Abstract: A nanocrystal with a large Stokes shift includes a matrix domain having a composition of M1xM2yAz, and a plurality of seed domains which are distributed in the matrix domain and each of which has a composition of M1x?M2y?Az?, wherein M1, M2, A, x, y, z, x?, y?, and z? are as defined herein.
    Type: Application
    Filed: August 17, 2018
    Publication date: October 24, 2019
    Applicant: National Tsing Hua University
    Inventors: Hsueh-Shih CHEN, Yi-Ching YANG
  • Publication number: 20190301709
    Abstract: The present invention discloses a light conversion material with light reflective structure, comprises: a transparent substrate, a plurality of first light conversion films and second light conversion films. Particularly, the second light conversion film is disposed between two of the first light conversion films, and has a refractive index greater than that of the first light conversion film. By such design, when a short-wavelength light is incident on the first light conversion films and the second light conversion films, parts of the short-wavelength light have a reflected light forming at the junction between the two light conversion films, and the reflected light would bounce back to the first light conversion film and/or the second light conversion film, thereby those unconverted short-wavelength light being prevented from directly passing the light conversion material. Briefly speaking, this light conversion material exhibits an outstanding performance on short-wavelength light recycling.
    Type: Application
    Filed: May 31, 2018
    Publication date: October 3, 2019
    Inventor: Hsueh-Shih Chen
  • Publication number: 20190293842
    Abstract: Light scattering particles made of TiO2, BaSO4, SiO2, or Al2O3 have been used in a QD layer of a QD-LED for enhancing luminous intensity. However, the light scatters are found to decline the light conversion efficiency of the QD layer. In view of that, the present invention particularly discloses a light conversion material with high conversion efficiency for use in the QD-LED. The light conversion material mainly comprises a polymer matrix, a plurality of 3D photonic crystals dispersed in the polymer matrix, and a plurality of quantum dots dispersed in the polymer matrix, wherein each of the plurality of 3D photonic crystals is formed by applying a self-assembly process to a plurality of polymer beads. Moreover, a variety of experimental data have proved that, this light conversion material indeed exhibits outstanding photoluminescence intensity and light conversion efficiency both superior than that of the conventionally-used QD layer.
    Type: Application
    Filed: June 23, 2018
    Publication date: September 26, 2019
    Inventors: Hsueh-Shih Chen, SHIH-JUNG HO
  • Patent number: 10261643
    Abstract: The present invention discloses a novel and inventive transparent conductive film Differing from conventional metal mesh substrates are mainly constituted by silver nanowires (AgNW), the present invention particularly designs a nano metal wire consisting of a metallic core wire, a transition layer and a protection layer, and further develops a transparent conductive film consisting of a substrate and a metal mesh layer; wherein the metal mesh layer is constituted by the said nano metal wires. It is worth describing that, a variety of experimental data prove that the thermal resistance of this novel transparent conductive film is up to 400° C.; moreover, experimental data also exhibit that the transparent conductive film can filter part of blue light portion out of a white light by 20-30%.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: April 16, 2019
    Assignee: National Tsing Hua University
    Inventors: Hsueh-Shih Chen, Ming-Hua Yeh, Shih-Jung Ho
  • Patent number: 10193006
    Abstract: A nanowire composite structure is provided. The nanowire composite structure includes a nanowire core, wherein a material of the nanowire core includes Se, Te or a combination thereof. The nanowire composite structure also includes a metal layer covering the nanowire core. A method for forming the nanowire composite structure, a protective structure of a nanowire, a sensing device, and a method for forming a sensing device are also provided.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: January 29, 2019
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Hsueh-Shih Chen, Pin-Ru Chen
  • Publication number: 20180312749
    Abstract: Differing from commercial solution of colloidal quantum dots being often composed of a non-polar organic solvent and a plurality of quantum dots, the present invention discloses a combination solution of colloidal quantum dots comprising a liquid monomer with low glass transition temperature and a plurality of quantum dot units, wherein the quantum dot unit comprises a polar carrier particle, a plurality of quantum dots and an enclosure layer with high glass transition temperature. It is worth explaining that, after applying an aging treatment to the combination solution of colloidal quantum dots and the commercial solution of colloidal quantum dots for 200 minutes, measurement data of UV-VIS spectrophotometer have proved that the combination solution of colloidal quantum dots provided by the present invention is 1.6 times as stable as the commercial solution of colloidal quantum dots.
    Type: Application
    Filed: October 31, 2017
    Publication date: November 1, 2018
    Inventor: Hsueh-Shih Chen
  • Publication number: 20180315898
    Abstract: The present invention discloses a light-diffusion quantum dot nanostructure and an LED component having the same. The quantum dot nanostructure comprises an optical core, an organic ligand layer, a hydrophobic layer, an inorganic encapsulation layer, and a multi-layered water vapor barrier layer. In the present invention, the multi-layered water vapor barrier layer is particularly designed to an onion skin-like structure, so as to facilitate photoluminescence rays radiated from the optical core can emit out of the barrier layer via voids or pores of the onion skin-like structure, such that the uniformity of the spatial light output distribution of the LED component having the quantum dot nanostructures can be obviously enhanced. On the other hand, because the multi-layered water vapor barrier layer can also improve the dispersibility of the light-diffusion quantum dot nanostructures in a colloidal encapsulation of the LED component, the luminous intensity of the LED component is therefore increased.
    Type: Application
    Filed: October 31, 2017
    Publication date: November 1, 2018
    Inventor: Hsueh-Shih Chen
  • Patent number: 10010850
    Abstract: The present invention mainly provides a non-contact reactor consisting of a reaction vessel having a particularly-designed size, a plurality of injection modules, an agitator, a heat exchange module, and an electrical gate valve module. Operators can inject at least one precursor solution into the reaction nanometer-scale semiconductor crystallites vessel and make the injected precursor solution reach a specific position in the reaction vessel by using the electrical gate valve to control the injection pressure of the injection modules. Moreover, the operators can further control the rotation speed of the agitator through a controller, so as to evenly and quickly mix the injected precursor solution and a specific solution pre-filled into the reaction vessel to a mixture solution; therefore, the acceleration of production rate and the enhance of production yield of the semiconductor nanocrystals are carried out.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: July 3, 2018
    Assignee: National Tsing Hua University
    Inventors: Hsueh-Shih Chen, Shih-Jung Ho, Chang-Wei Yeh
  • Patent number: 9997355
    Abstract: A method for preparing a quantum dot mixture with a bimodal size distribution includes steps of: a) preparing a mixed cationic precursor solution, b) preparing a first anionic precursor solution and a second anionic precursor solution, c) conducting a nucleation reaction at a nucleation temperature for a predetermined nucleation time, and d) conducting a crystallite growth reaction at a crystallite growth temperature for a predetermined crystallite growth time.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: June 12, 2018
    Assignee: National Tsing Hua University
    Inventors: Hsueh-Shih Chen, Ching-Che Hung
  • Patent number: 9982140
    Abstract: An inorganic-organic hybrid oxide polymer is provided. The polymer consists of an inorganic molecular cluster MxNyOz and an organic molecular polymer cluster OG, wherein the inorganic molecular cluster MxNyOz consists of a hybrid oxidation based on a first element M and a second element N and has a molecular formula MxNyOz, wherein x=0.01˜0.99, y=0.01˜0.99, z/(x+y)=0.01˜3.99, and the inorganic molecular cluster MxNyOz has a plurality of voids having an averaged characteristic dimension in a range between 0.2 nm˜30 nm and filled with the organic molecular polymer cluster OG, wherein the first element M and the second element N are respectively selected from a group consisting of an intermediate element, a metal element, a semiconductor element and a combination thereof and the first element M is different from the second element N.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: May 29, 2018
    Assignee: National Tsing Hua University
    Inventor: Hsueh-Shih Chen
  • Publication number: 20180112129
    Abstract: A quantum dot luminophore comprising at least one luminescent core, a spacer layer, an encapsulation layer, and a plurality of quantum dots is disclosed. The luminescent core is designed to emit a red light after being excited by an incident blue light, and the quantum dots are configured to irradiate a green light by the illumination of the blue light and/or the red light. In the present invention, the quantum dots are particularly used to cover or surround the luminescent core for solving the light re-absorption. By such arrangement, even though part of incident blue light (about 10-30%) may be reflected by the luminescent core made of phosphor materials, the reflected blue light still can also be recycled by the quantum dots surrounding the luminescent core, such that the light conversion efficiency and emission intensity of the luminescent core are hence increased because the loss of blue light is decreased.
    Type: Application
    Filed: September 27, 2017
    Publication date: April 26, 2018
    Inventors: YING-FANG CHEN, HSUEH-SHIH CHEN
  • Patent number: 9925530
    Abstract: The present invention relates to a nanoporous thin film and a method for fabricating the same. The nanoporous thin film fabricating method for fabricating a nanoporous thin film with a composite photocatalyst structure for a photodegradation and a water purification includes providing a porous substrate with a plurality of through-nanopores therein, each of which through-nanopores have an inner tube wall; forming an oxide-based photocatalyst layer over the porous substrate and the inner tube wall by using a first chemical-based deposition process; and forming a metal-based photocatalyst layer on a part of the oxide-based photocatalyst layer by using a second chemical-based deposition process.
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: March 27, 2018
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Tsong-Pyng Perng, Hsueh-Shih Chen, Chung-Yi Su, Po-Hsun Chen
  • Publication number: 20180067579
    Abstract: The present invention discloses a novel and inventive transparent conductive film Differing from conventional metal mesh substrates are mainly constituted by silver nanowires (AgNW), the present invention particularly designs a nano metal wire consisting of a metallic core wire, a transition layer and a protection layer, and further develops a transparent conductive film consisting of a substrate and a metal mesh layer; wherein the metal mesh layer is constituted by the said nano metal wires. It is worth describing that, a variety of experimental data prove that the thermal resistance of this novel transparent conductive film is up to 400° C.; moreover, experimental data also exhibit that the transparent conductive film can filter part of blue light portion out of a white light by 20-30%.
    Type: Application
    Filed: January 10, 2017
    Publication date: March 8, 2018
    Inventors: HSUEH-SHIH CHEN, MING-HUA YEH, SHIH-JUNG HO
  • Publication number: 20180050316
    Abstract: The present invention mainly provides a non-contact reactor consisting of: a reaction vessel having a particularly-designed size, a plurality of injection modules, an agitator, a heat exchange module, and an electrical gate valve module. When this non-contact reactor is operated to produce, operators are able to inject at least one precursor solution into the reaction nanometer-scale semiconductor crystallites vessel and make the injected precursor solution reach a specific position in the reaction vessel by using the electrical gate valve to control the injection pressure of the injection modules. Moreover, the operators can further properly control the rotation speed of the agitator through a controller, so as to evenly and quickly mix the injected precursor solution and a specific solution pre-filled into the reaction vessel to a mixture solution; therefore, the acceleration of production rate and the enhance of production yield of the semiconductor nanocrystals are carried out.
    Type: Application
    Filed: January 10, 2017
    Publication date: February 22, 2018
    Inventors: HSUEH-SHIH CHEN, SHIH-JUNG HO, CHANG-WEI YEH
  • Patent number: 9890329
    Abstract: A quantum dot nanocrystal structure includes: a core of a compound M1A1, wherein M1 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from Se, S, Te, P, As, N, I, and O; an inner shell having a composition containing a compound M1xM21-xA1yA21-y, wherein M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is an element selected from Se, S, Te, P, As, N, I and O; and a multi-pod-structured outer shell of a compound M1A2 or M2A2 enclosing the inner shell and having a base portion and protrusion portions extending from the base portion.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: February 13, 2018
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Hsueh-Shih Chen, Guan-Hong Chen, Kai-Cheng Wang, Chang-Wei Yeh, Cheng-Wei Chang, Ching-Che Hung
  • Publication number: 20170365729
    Abstract: A nanowire composite structure is provided. The nanowire composite structure includes a nanowire core, wherein a material of the nanowire core includes Se, Te or a combination thereof. The nanowire composite structure also includes a metal layer covering the nanowire core. A method for forming the nanowire composite structure, a protective structure of a nanowire, a sensing device, and a method for forming a sensing device are also provided.
    Type: Application
    Filed: June 16, 2017
    Publication date: December 21, 2017
    Inventors: Hsueh-Shih Chen, Pin-Ru Chen