Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: A combined power plant is provided. The combined power plant includes a gas turbine configured to combust fuel to generate a rotating force, a boiler configured to heat water to generate steam, an ammonia decomposition apparatus configured to receive a combustion gas generated in the gas turbine to thermally decompose ammonia to generate a decomposed gas containing hydrogen, nitrogen, and a residual ammonia, a steam turbine configured to generate a rotating force using the steam generated in the boiler, and a decomposed gas supply line configured to supply the decomposed gas generated in the ammonia decomposition apparatus to a combustor of the gas turbine.

Abstract: A display device, including a backlight module (1). The backlight module (1) includes an optical film layer (2), the optical film layer (2) includes at least two diffusers (21) stacked in sequence, and the haze of each diffuser (21) is 80%-99%. The backlight module (1) further includes an LED light source (3), and the optical band of the LED light source (3) is greater than 455 nm. The display device further includes a cover plate (5) and at least one anti-reflection layer (7), the cover plate (5) is provided with an atomization layer (51), and the anti-reflection layer (7) is located on the side of the cover plate (5) facing away from a display panel (4).

Abstract: A device includes: (1) a boron arsenide substrate; and (2) an integrated circuit disposed in or over the boron arsenide substrate.

Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

Abstract: Methods for depositing films by atomic layer deposition using aminosilanes are provided.

Abstract: A combined power plant is provided. The combined power plant includes a gas turbine configured to combust fuel to generate a rotating force, a boiler configured to heat water to generate steam, an ammonia decomposition apparatus configured to receive a combustion gas generated in the gas turbine to thermally decompose ammonia to generate a decomposed gas containing hydrogen, nitrogen, and a residual ammonia, a steam turbine configured to generate a rotating force using the steam generated in the boiler, and a decomposed gas supply line configured to supply the decomposed gas generated in the ammonia decomposition apparatus to a combustor of the gas turbine.

Abstract: Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.

Abstract: Proposed is a cushion for posture correction capable of obtaining a corrective effect of a turtle neck syndrome and a straight waist syndrome just by taking a prone position. The cushion for posture correction includes: a cushion body (A) formed to be upwardly inclined toward a front and configured to support a user's upper body, wherein the cushion body (A) is formed with a cervical vertebra support part (100) protruding upward at a front end thereof so that user's neck and chin are seated and with an area concavely formed between opposite side ends where user's armpits are seated.

Abstract: A substrate processing system includes a first power source configured to supply plasma having a first power level, a second power source configured to supply plasma having a second power level greater than the first power level, and a controller configured to dose a process chamber with precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of a substrate and is insufficient to decompose the precursor that is adsorbed. The controller is further configured to remove a portion of the precursor that does not adsorb onto the substrate from the process chamber while the plasma having the first power level is being supplied and activate the precursor that is adsorbed using plasma having the second power level while the plasma having the first power level is still being supplied. The second power level is sufficient to decompose the precursor that is adsorbed.

Abstract: Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

Abstract: Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.

Abstract: A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.

Abstract: Methods for depositing films by atomic layer deposition using cyclic siloxane precursors are provided. Methods involve exposing the substrate to a cyclic siloxane precursor during operation of an atomic layer deposition cycle to form silicon oxide.

Abstract: A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.