Abstract: A testing apparatus for a semiconductor package includes a circuit board, testing patterns and a socket. The circuit board has a testing region and includes a plurality of testing contacts and a plurality of signal contacts distributed in the testing region. The testing patterns are embedded in the circuit board and electrically connected to the testing contacts, where each of the testing patterns includes a first conductive line and a second conductive line including a main portion and a branch portion connected to main portion. The first conductive line is connected to the main portion. The socket is located on the circuit board and comprising connectors electrically connected to the circuit board, wherein the connectors are configured to transmit electric signals for testing the semiconductor package from the testing apparatus.

Abstract: An intelligent light supplement device, video apparatus, and an intelligent light supplement method are disclosed. The intelligent light supplement device includes a light source input module, a light source computing module, and a light source output module. The light source input module has a light sensing unit, which receives an ambient light source. The light source computing module is electrically connected to the light source input module, compares the ambient light source with a content of an illuminance comparison table to generate an illuminance control signal corresponding to an apparatus illuminance value, and/or compares the ambient light source with a content of a color temperature comparison table to generate a color temperature control signal corresponding to an apparatus color temperature value. The light source output module has a light emitting unit and drives the light emitting unit according to the illuminance control signal and/or the color temperature control signal.

Abstract: A package structure and a method of manufacturing the same are provided. The package structure includes a die, an encapsulant, a first redistribution line (RDL) structure, a second RDL structure, a conductive terminal, and a through via. The encapsulant laterally encapsulates the die. The first redistribution line (RDL) structure on a first side of the die and the encapsulant, wherein the first RDL structure comprises a dielectric layer and a redistribution layer in the dielectric layer. The second RDL structure is located on a second side of the die and the encapsulant. The conductive terminal is connected to the redistribution layer. The through via extends through the encapsulant and the redistribution layer to contact the conductive terminal and the second RDL structure.

Abstract: The present invention discloses a signal gain tuning circuit having adaptive mechanism. An amplifier receives an analog signal to generate a tuned analog signal to an ADC circuit to further generate a digital signal. A gain control capacitor array and the amplifier together determine a gain of the tuned analog signal. The control circuit receives an actual level of the digital signal to determine an offset of the digital signal and an estimated level to generate a tuning control signal. Each of coarse-tuning capacitors of a coarse-tuning capacitor array corresponds to a first tuning amount relative to a maximal gain. Each of fine-tuning capacitors of a fine-tuning capacitor array corresponds to a second tuning amount relative to the maximal gain. A tuning capacitor enabling combination of the coarse-tuning and fine-tuning capacitor arrays are determined according to the tuning control signal to tune the gain and decrease the offset.

Abstract: A method for processing an uplink reference signal includes determining a current baseband processing payload, and processing each of N received uplink reference signals according to a preset first condition in response to the baseband processing payload being less than a first preset value or processing each uplink reference signal in a signal set according to a preset second condition in response to the baseband processing payload being greater than a second preset value. The second preset value is greater than or equal to the first preset value. The signal set includes one or more of the N uplink reference signals. A baseband processing payload corresponding to processing an uplink reference signal according to the preset second condition is less than a baseband processing payload corresponding to processing an uplink reference signal according to the preset first condition. N is a positive integer.

Abstract: A semiconductor-on-insulator (SOI) substrate includes a handle substrate, a charge-trapping layer located over the handle substrate and including nitrogen-doped polysilicon, an insulating layer located over the charge-trapping layer, and a semiconductor material layer located over the insulating layer. The nitrogen atoms in the charge-trapping layer suppress grain growth during anneal processes used to form the SOI substrate and during subsequent high temperature processes used to form semiconductor devices on the semiconductor material layer. Reduction in grain growth reduces distortion of the SOI substrate, and facilitates overlay of lithographic patterns during fabrication of the semiconductor devices. The charge-trapping layer suppresses formation of a parasitic surface conduction layer, and reduces capacitive coupling of the semiconductor devices with the handle substrate during high frequency operation such as operations in gigahertz range.

Abstract: Provided is a method for treating or preventing hair loss or facilitating hair growth or regrowth. More particularly, it relates to a composition for preventing or treating hair loss and/or facilitating hair growth on the scalp and/or skin of a subject in need thereof. The composition includes an effective amount of a polypeptide or a nucleic acid molecule encoding the polypeptide, and the polypeptide comprises an amino acid sequence having an EGF-like domain of thrombomodulin or a conservative variant thereof.

Abstract: A manufacturing method of a package-on-package structure includes placing a lower package on a tape, where conductive bumps of the lower package are in contact with the tape; and bonding an upper package to the lower package, where during the bonding, the conductive bumps are pressed against the tape so that a curvature of the respective conductive bump changes.

Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, an insulating layer over the substrate, a conductor layer over and in contact with a top surface of the substrate, and a gas sensing film. The conductor layer includes a conductive pattern having a plurality of openings, and the conductive pattern is embedded in the insulating layer. The gas sensing film is formed over a portion of the conductive pattern.

Abstract: An image calibration method is applied to an image calibration device includes an image receiver and an operation processor. The image calibration method of providing a motion deblur function includes driving a first camera to capture a first image having a first exposure time, driving a second camera disposed adjacent to the first camera to capture a second image having a second exposure time different from and at least partly overlapped with the first exposure time, and fusing a first feature of the first image and a second feature of the second image to generate a fusion image.

Abstract: A method for processing images, an electronic device, and a storage medium are provided. A head portrait of a subject is obtained from a camera device. A hair region and a scalp region are identified from the head portrait. A proportion of the scalp region is calculated. The proportion of the scalp region is compared with a preset value, and baldness of the subject is determined accordingly. If found to be bald, complementary color processing is performed by processing the scalp region using a hair color of the hair region, and an updated head portrait is obtained after finishing the complementary color processing. The method automatically detects baldness and supplements the hair color in the scalp region.

Abstract: A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: The present disclosure describes a semiconductor device with a rare earth metal oxide layer and a method for forming the same. The method includes forming fin structures on a substrate and forming superlattice structures on the fin structures, where each of the superlattice structures includes a first-type nanostructured layer and a second-type nanostructured layer. The method further includes forming an isolation layer between the superlattice structures, implanting a rare earth metal into a top portion of the isolation layer to form a rare earth metal oxide layer, and forming a polysilicon structure over the superlattice structures. The method further includes etching portions of the superlattice structures adjacent to the polysilicon structure to form a source/drain (S/D) opening and forming an S/D region in the S/D opening.

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.

Abstract: An improved switching power converting apparatus (10) includes a power converting circuit (102), a sampling circuit (104), a signal gain adjustment circuit (106), a frequency limiting circuit (108) and a pulse width modulation controller (110). The sampling circuit (104) is configured to detect the power converting circuit (102) to obtain a sampled signal (Vs) and transmit the sampled signal (Vs) to the signal gain adjustment circuit (106). The signal gain adjustment circuit (106) is configured to adjust the sampled signal (Vs) to obtain a control signal (Vcon) and transmit the control signal (Vcon) to the frequency limiting circuit (108). The pulse width modulation controller (110) is configured to control an operating frequency of the pulse width modulation controller (110) based on the control signal (Vcon).

Abstract: Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.

Abstract: A low thermal budget dielectric material treatment is provided. An example method of the present disclosure includes providing a semiconductor structure, depositing a dielectric material over the semiconductor structure, treating the dielectric material with a gaseous species carried in a supercritical fluid, and after the treating, reducing a thickness of the dielectric material.

Abstract: An embodiment is a device including a substrate comprising conductive pads, a package component bonded to the conductive pads of the substrate with solder connectors, the package component comprising an integrated circuit die, the integrated circuit die comprising die connectors, one of the solder connectors coupled to each of the die connectors and a corresponding conductive pad of the substrate, a first dielectric layer laterally surrounding each of the die connectors and a portion of the solder connectors, and a second dielectric layer being between the first dielectric layer and the substrate, the second dielectric layer laterally surrounding each of the conductive pads of the substrate.

Abstract: Package structures and methods of forming package structures are described. A method includes placing a first package within a recess of a first substrate. The first package includes a first die. The method further includes attaching a first sensor to the first package and the first substrate. The first sensor is electrically coupled to the first package and the first substrate.