Abstract: Methods, systems, and devices for two-stage buffer operations supporting write commands are described. If data is written to a memory device starting at a multi-plane page offset other than zero, the read performance for the data may decrease significantly due to die misalignment. To avoid die misalignment, a memory system may support two buffers for write data: a flush buffer and a temporary buffer. The memory system may determine whether to add received data to the flush buffer, the temporary buffer, or a combination thereof based on a data transfer size and a threshold size. If the data in the temporary buffer satisfies a copy condition, the data in the temporary buffer is copied into the flush buffer. If the data in the flush buffer satisfies a flush condition, the data in the flush buffer is written to the memory device starting at a multi-plane page offset of zero.

Abstract: Methods, systems, and devices for dynamic voltage supply for memory circuit are described. An apparatus may adjust a supply voltage based on a process corner and a temperature of the memory system. An apparatus may include a memory array and a controller. The controller may determine a first temperature of the apparatus is less than a first temperature threshold at a first time. The controller may transition a voltage supplied to the controller from a first voltage level to a second voltage level based on determining the first temperature is less than the first temperature threshold. The controller may determine a second temperature is greater than a second temperature threshold at a second time. The controller may transition the voltage supplied to the controller from the second voltage level to the first voltage level based on determining the second temperature is greater than the second temperature threshold.

Abstract: A method of operating a memory system is provided. A logical-to-physical (L2P) address mapping table is obtained in response to a data request instruction. Corresponding data is read from a memory device based on the L2P address mapping table. The L2P address mapping table includes a base physical address of continuous first physical addresses corresponding to first logic addresses and a base physical address offset corresponding to the continuous first physical addresses.

Abstract: Embodiments of the present disclosure disclose a memory system and operation method thereof, a memory controller and a memory. The memory system includes a memory. The memory includes a memory cell array and a peripheral circuit coupled to the memory cell array. The memory cell array includes memory cells capable of storing m bits of information, and m is a positive integer greater than 1. The operation method includes: determining, by the peripheral circuit, (n+1)th group of page data according to a received prefix command and received n groups of page data, wherein n is a positive integer, and n+1 is a positive integer less than or equal to m; and writing the n groups of page data and the (n+1)th group of page data into the memory cell array to generate 2n different data states in the memory cell array.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: A multilevel memory system includes a nonvolatile memory (NVM) device with an NVM media having a media write unit that is different in size than a host write unit of a host controller of the system that has the multilevel memory system. The memory device includes a media controller that controls writes to the NVM media. The host controller sends a write transaction to the media controller. The write transaction can include the write data in host write units, while the media controller will commit data in media write units to the NVM media. The media controller can send a transaction message to indicate whether the write data for the write transaction was successfully committed to the NVM media.

Abstract: Embodiments herein describe techniques for a memory device including at least two memory cells. A first memory cell includes a first storage cell and a first transistor to control access to the first storage cell. A second memory cell includes a second storage cell and a second transistor to control access to the second storage cell. A shared contact electrode is shared between the first transistor and the second transistor, the shared contact electrode being coupled to a source area or a drain area of the first transistor, coupled to a source area or a drain area of the second transistor, and further being coupled to a bit line of the memory device. Other embodiments may be described and/or claimed.

Abstract: A semiconductor device package includes a first substrate having an electrical circuit, semiconductor dies stacked one on top of the other, and bond wires electrically connected one to another. The bond wires electrically couple the semiconductor dies to one another and to the electrical circuit. There is a first bond wire having a first portion connected to a first semiconductor die, a second portion connected to a second semiconductor die, and an intermediate portion between the first portion and second portion. The semiconductor device package further includes a molding compound encapsulating the semiconductor dies, and the first and second portions of the first bond wire. The intermediate portion of the first bond wire is exposed along a top planar surface of the molding compound. The semiconductor device package may be used for coupling one or more other semiconductor device packages thereto via the exposed intermediate portion.

Abstract: A compressor (200), comprising: a first rotor (20) being rotatable around a first axis (11), the first rotor (20) comprising a first portion (22) and a second portion (24); and a first shaft (10) carrying the first portion (22) and the second portion (24), the first shaft (10) having a first end (12) and a second end (14) that are oppositely arranged, wherein the first rotor (20) is configured to be applied with a preset acting force in a direction from the first end (12) toward the second end (14) or from the second end (14) toward the first end (12) during rotation. The size of the compressor (200) can be reduced with the displacement of the compressor (200) remaining substantially unchanged.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: An interface of a device is used to couple to another device and includes a set of data pins to support high speed data communication on an interconnect link between the devices based on an interconnect protocol. The interface further includes at least one auxiliary pin to support a particular signal defined by the interconnect protocol. The device is further configurated to generate hint data for use by the other device and send the hint data as a sideband signal to the other device over the auxiliary pin, where the sideband signal is distinct from signals defined for the auxiliary pin by the interconnect protocol.

Abstract: A memory device comprises a memory array and a memory controller operatively coupled to the memory array. The memory controller includes a processor configured to initiate read operations to the memory array; compare the number of rad operations to a predetermined threshold number of read operations; initiate scanning memory pages of a block of memory cells for errors in response to reaching the threshold number of read operations for the block; and iteratively change the threshold number to a new threshold number, perform the new threshold number of read operations on the block of memory cells, and error scan memory pages associated with the last read operation of the new threshold number of rad operations.

Abstract: A data operation method of a memory system is provided. The method includes, based on an obtained logical to physical mapping table, determining whether address values of a plurality of target physical addresses in the logical to physical mapping table corresponding to a plurality of target logical addresses are continuous; if so, selecting one of the plurality of target physical addresses as a base physical address, and setting a base physical address offset based on address values of remaining target physical addresses; and storing the base physical address and the base physical address offset into a cache of a memory controller, as a mapping relationship of the plurality of target logical addresses corresponding to the plurality of target physical addresses.

Abstract: Methods, systems, and devices for dynamic power control are described. In some examples, a memory device may be configured to adjust a first duration for transitioning power modes. For example, the memory device may be configured to operate in a first power mode, a second power mode, and a third power mode. When operating in a second power mode, the memory device may be configured to increase or decrease the first duration for transitioning to a third power mode based on a second duration between received commands. If no commands are received during the first duration, the memory device may transition from the second power mode to the third power mode.

Abstract: Methods, systems, and devices for read operations for regions of a memory device are described. In some examples, a memory device may include a first cache for storing mappings between logical addresses and physical addresses of the memory device, and a second cache for storing indices associated with entries removed from the first cache. The memory device may include a controller configured to load mappings to the first cache upon receiving read commands. When the first cache is full, and when the memory device receives a read command, the controller may remove an entry from the first cache and may store an index associated with the removed entry to the second cache. The controller may then transmit a mapping associated with the index to a host device for use in a HPB operation.

Abstract: A fan frame turbulence structure includes a frame body having a wind incoming side and a wind outgoing side respectively on two sides of the frame body. The frame body defines an airflow passage which passes through the frame body from the wind incoming side to the wind outgoing side. The wind incoming side has an inlet in communication with the airflow passage. The inlet has a breaking section between the wind incoming side and the passage inner wall. The breaking section includes densely distributed breaking units. The breaking units define therebetween gaps in communication with the airflow passage. The breaking units serve to break and fracture airflow sucked in from the wind incoming side, whereby part of the airflow passes through the gaps between the breaking units and is broken and fractured into multiple gap turbulences to flow into the air passage so as to lower the wideband noise.

Abstract: A fan frame with noise muffling structure includes a frame having a top and a bottom and defining a centered air flow passage that extends from the top to the bottom. The air flow passage has an air inlet and an air outlet formed on the top and the bottom, respectively. The frame further has a noise muffling zone in at least one area of the frame located between the air flow passage and an outer periphery of the frame. In the noise muffling zone, there is provided at least one noise muffling unit, which is located between the top and the bottom without communicating with the air flow passage. The noise muffling unit internally defines a hollow cavity, which is closed between but not extended through the top and the bottom. The hollow cavity isolates air flow noise and absorbs frame vibration and noise produced by the frame vibration.

Abstract: An electronic device having an enclosure formed from at least one glass cover and a peripheral structure formed adjacent the periphery of the glass cover is disclosed. The peripheral structure can be secured adjacent to the glass cover with an adhesive. The peripheral structure can be molded adjacent the glass cover so that a gapless interface is formed between the peripheral structure and the periphery of the glass cover. In one embodiment, the peripheral structure includes at least an inner peripheral structure and an outer peripheral structure.