Abstract: Apparatus, methods, and computer-readable media for sidelink multiple transmission reception points (TRPs) relaying are disclosed herein. An example method for wireless communication at a base station includes transmitting communication for a target user equipment (UE) to multiple TRPs for relaying the communication to the target UE over a sidelink. The method may further include configuring, for one or more of the target UE or at least one of the multiple TRPs, a first transmission configuration indicator (TCI) state for a physical sidelink control channel (PSCCH) between the UE and the at least one of the multiple TRPs.

Abstract: Systems, methods, and devices for wireless communication that support resource selection and indication for sidelink demodulation reference signal (DMRS) bundling. A transmitting UE determines sidelink resources for bundling a sidelink DMRS transmission to be transmitted to a receiving UE. In sidelink mode 1, the sidelink resources may be determined based on indications from a base station, which may include whether the transmitting UE is to maintain phase continuity over the sidelink resources during the bundling, or whether the transmitting UE is to include a phase jump reference signal with the bundled DMRS transmission to the receiving UE. In sidelink mode 2, the transmitting UE may select the sidelink resources based on the phase continuity capabilities of the transmitting UE and/or of the receiving UE, and/or based on a sensing of the sidelink channel. In some cases, the receiving UE may provide a resource recommendation to the transmitting UE.

Abstract: An apparatus comprising: at least one processor; and at least one memory including computer program code; the at least one memory and the computer program code configured to, with the at least one processor, cause the apparatus at least to perform: receiving at least one signal comprising control information; determining data to transmit using grant-free data transmission; determining whether grant-free data transmission using time-frequency repetition is permitted for the grant-free data transmission in dependence on the received control information; if it is determined that use of time-frequency repetition for the grant-free data transmission is permitted, causing transmission of grant-free data transmission using time-frequency repetition; and if it is determined that use of time-frequency repetition for the grant-free data transmission is not permitted, causing transmission of grant-free data transmission without using time-frequency repetition.

Abstract: The present invention provides a method for preparing a food fumeol, a method for preparing a food fumeol from Perilla frutescens as a raw material and application. The method for preparing a food fumeol includes: respectively preparing a single fumeol from each of n raw materials; and then, mixing at least two kinds of single fumeols to prepare the food fumeol, wherein n is a positive integer being greater than or equal to 2. According to application of the food fumeol, food is liquid smoked by using the food fumeol of the present application. The types and flavors of the food fumeol are greatly enriched, and the development of the food fumeol of different types and flavors is facilitated. A Perilla frutescens fumeol having a natural unique flavor prepared by the method for preparing the food fumeol from Perilla frutescens as the raw material contains rich flavor substances, and achieves antibacterial and antioxidant effects.

Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: A method for forming a semiconductor package is provided. The method includes forming a first photonic routing structure over a substrate, disposing the first photonic routing structure over a redistribution structure, disposing a second photonic routing structure and an optical engine die on the redistribution structure and forming a molding structure between and separating the first photonic routing structure and the second photonic routing structure.

Abstract: A quantum memory device includes: a waveguide configured to spatially confine paths of photons therein; a memory cell that includes a micro-ring resonator (MRR), a frequency tuner, and a quantum memory material portion, wherein the MRR includes a first segment that is parallel to a segment of the waveguide, wherein the frequency tuner is configured to modulate a photon resonance frequency in the MRR by modifying an effective refractive index within, or around, a second segment of the MRR, and wherein the quantum memory material portion includes a quantum memory material having a ground state and an excitation state that stores photons therein and located within or on a third segment of the MRR; and a control circuit configured to modulate the photon resonance wavelength in the MRR during a first step of a photon capture operation to match a predefined wavelength, and to generate captured photons in the MRR.

Abstract: Methods for forming a dielectric isolation region between two active regions are disclosed herein. A mandrel is formed on a substrate, then etched to form a trench. Spacers are formed on the sidewalls of the mandrel. The mandrel is removed, and the substrate is etched to form fins extending in a first direction in the two active regions, and of fins extending in a second direction. A mask is formed that exposes the substrate between the fins extending in the second direction. The substrate is etched to form a trench. The trench is filled with a dielectric material up to the top of the fins to form the dielectric isolation region. The methods provide better depth control during etching between the two active regions, and also permit the trench to extend deeper into the substrate due to reduced depth/width ratios during the etching steps.

Abstract: A high-frequency connector includes a plurality of connection terminal groups, at least one first metal part, a plurality of second metal parts and an insulating shell. Each connection terminal group includes a male terminal and a female terminal, the male terminal is in contact with the female terminal to transmit signals, and the connection terminal groups are arranged along a first direction; the at least one first metal part extends along the first direction; the second metal parts are disposed between the plurality of connection terminal groups and extend along a second direction, in which each second metal part includes at least two metal pieces, and the at least two metal pieces are not connected to each other; the insulating shell carries the second metal parts, so that the at least one first metal part and the second metal parts are not in contact with each other.

Abstract: A semiconductor device and a method of making the same are provided. A first die and a second die are placed over a carrier substrate. A first molding material is formed adjacent to the first die and the second die. A first redistribution layer is formed overlying the first molding material. A through via is formed over the first redistribution layer. A package component is on the first redistribution layer next to the copper pillar. The package component includes a second redistribution layer. The package component is positioned so that it overlies both the first die and the second die in part. A second molding material is formed adjacent to the package component and the first copper pillar. A third redistribution layer is formed overlying the second molding material. The second redistribution layer is placed on a substrate and bonded to the substrate.

Abstract: Disclosed is a method for detecting a small number of foreign cells in a cell population with high sensitivity. The method is to detect foreign cells in a sample comprising target cells and the foreign cells. In the method, one or more specific biomarkers of all cells in the sample are detected. The method comprises the step of, before extracting the total biomarkers of the sample, dividing the sample into a plurality of groups to be tested, the plurality of groups to be tested all satisfying that one foreign cell can be detected within a single system maximum sensitivity s. The detection method of the present invention can improve the sensitivity to more than one hundred thousandth.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate. The semiconductor device includes a P-type device over the semiconductor fin and an N-type device over the semiconductor fin. The P-type device includes a first source/drain (S/D) feature adjacent a first gate structure. The P-type device includes a dipole layer over the first S/D feature, where the dipole layer includes a first metal and a second metal different from the first metal. The P-type device further includes a first silicide layer over the dipole layer, where the first silicide layer includes the first metal. The N-type device includes a second S/D feature adjacent a second gate structure. The N-type device further includes a second silicide layer directly contacting the second S/D feature, where the second silicide layer includes the first metal, and where a composition of the second silicide layer is different from that of the dipole layer.

Abstract: An electrodialysis cell includes a housing defining an internal chamber, a core positioned within the internal chamber, a first electrode positioned in the internal chamber adjacent the housing, a second electrode coupled to the core and spaced from the first electrode, and a membrane assembly positioned between the first and second electrodes in a spiral wound configuration. The housing includes an inlet end for receiving a feed fluid and an outlet end in fluid communication with the inlet end. The membrane assembly includes a plurality of ion exchange membranes spaced from each other to define a plurality of fluid channels between the inlet and outlet ends.

Abstract: With the fasting growth of renewable energy resources and DC supplied loads, DC electrical systems have been increasingly received attentions all over the world. DC breaker systems play a key role in protection systems for disconnecting sources and loads, and they are also used mainly for removing faulted sections from the system accurately and reliably. Solid state DC breakers benefit from fast response time and compactness features; however, due to the lack of zero current realization and high-power losses, the reliability and efficiency of these devices is low. The system proposes a solid-state DC breaker for medium voltage DC (MVDC) systems.

Abstract: A method for predicting a day-ahead wind power of wind farms, comprising: constructing a raw data set based on a correlation between the to-be-predicted daily wind power, the numerical weather forecast meteorological feature and a historical daily wind power; obtaining a clustered data set and performing k-means clustering, obtaining a raw data set with cluster labels, and generating massive labeled scenes based on robust auxiliary classifier generative adversarial networks; determining the cluster label category of the to-be-predicted day based on the known historical daily wind power and numerical weather forecast meteorological feature, and screening out multiple scenes with high similarity to the to-be-predicted daily wind power based on the cluster label category; and obtaining the prediction results of the to-be-predicted daily wind power at a plurality of set times based on an average value, an upper limit value and a lower limit value of the to-be-predicted daily wind power.

Abstract: The high-density MRAM device of the present invention has a second interlayer dielectric (ILD) layer covering the capping layer in the MRAM cell array area and the logic area. The thickness of the second ILD layer in the MRAM cell array area is greater than that in the logic area. The composition of the second ILD layer in the logic area is different from the composition of the second ILD layer in the MRAM cell array area.

Abstract: A package structure and method for forming the same are provided. The package structure includes a substrate having a front-side surface and a back-side surface, and an electrical device formed over the front-side surface of a substrate. The package structure includes a dielectric layer formed below and in direct contact with the back-side surface of the substrate, and a first optical device formed in the dielectric layer. The package structure also includes a protective layer formed below or above the first optical device; and an electro-optic effect material layer formed in the protective layer.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a first user equipment (UE) may transmit, to a second UE, a reference signal used for initial beam-pairing (IBP) (IBP-RS) based at least in part on a destination identifier (ID), wherein one or more of an IBP-RS sequence, an IBP-RS configuration, or an IBP-RS resource is based at least in part on the destination ID. The first UE may receive, from the second UE and based at least in part on the IBP-RS, a beam-pairing response signal for a beam association. Numerous other aspects are described.

Abstract: Various embodiments of the teachings herein include a system for PLC connection. An example system may include: an automatic converter set on a third-party platform; a local adapter set on a local computer to access locally stored PLC information; and a set of intelligent communication interface adapters set on respective edge devices to access a PLC through a communication protocol connector compatible with multiple industrial networks. The automatic converter obtains information of each respective edge device through the intelligent communication interface adapter, and obtains information of each PLC through the local adapter and/or corresponding intelligent communication interface adapter. Based on a preset voting mechanism, the converter triggers the edge devices and the PLC for connectivity detection and voting, and select an individual edge device and a PLC to be connected according to the number of votes of each respective edge device and each PLC.

Abstract: Provided is a method for synthesizing 2H/1T? transition metal dichalcogenide (TMD) heterophase junctions. Synthesis of vertical 2H/1T? MoS2 heterophase junction is achieved by growing 2H MoS2 monolayers on a mica substrate under pure Ar carrier gas, and then growing 1T? MoS2 nanoribbons on top of the 2H MoS2 monolayers by changing the carrier gas from pure Ar to a mixture of Ar and H2 gases. The integrated devices based on 2H/1T? MoS2 heterophase structures display typical rectifying behavior with a current rectifying ratio of over 102 and achieve a responsivity of 1.07 A/W at 532 nm with an ultra-low dark current of lower than 10-11 A. These superior features make 2H/1T? MoS2 heterophase structure a promising candidate for future rectifiers as well as photodetectors. More importantly, the provided synthesis method can pave the way toward tailoring the phase in MoS2 to promote the performance of electronic devices.