Abstract: Some implementations described herein provide techniques and apparatuses for a stacked semiconductor die package. The stacked semiconductor die package may include an upper semiconductor die package above a lower semiconductor die package. The stacked semiconductor die package includes one or more rows of pad structures located within a footprint of a semiconductor die of the lower semiconductor die package. The one or more rows of pad structures may be used to mount the upper semiconductor die package above the lower semiconductor die package. Relative to another stacked semiconductor die package including a row of dummy connection structures adjacent to the semiconductor die that may be used to mount the upper semiconductor die package, a size of the stacked semiconductor die package may be reduced.

Abstract: Provided are a package structure and a method of forming the same. The method includes: forming an interconnect structure on a substrate; performing a laser grooving process to form a first opening in the interconnect structure and form a debris layer on a sidewall of the first opening in a same step; forming a protective layer to fill in the first opening and cover the debris layer and the interconnect structure; patterning the protective layer to form a second opening, wherein the second opening is spaced from the debris layer by the protective layer; performing a planarization process on the protective layer to expose a topmost contact pad of the interconnect structure; and performing a mechanical dicing process through the second opening to form a third opening in the substrate and cut the substrate into a plurality of semiconductor dies.

Abstract: A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.

Abstract: A semiconductor structure includes a package, an electrical device and an underfill material. The package includes a redistribution structure and at least one die, and the at least one die is disposed on a first side of the redistribution structure. The electrical device is disposed on a second side of the redistribution structure, the electrical device has a top surface and a bottom surface opposite to each other, and the top surface faces the redistribution structure. The underfill material is disposed between the top surface and the redistribution structure and extending toward the bottom surface, the underfill material has an end surface corresponding to the bottom surface, and the end surface is a flat surface. In addition, a manufacturing method of the semiconductor structure is also provided.

Abstract: A package structure is provided. The package structure includes a bottom die and a top die. The bottom die includes: a first active region surrounded by a first seal ring region; a first seal ring region including a bottom seal ring; and a first bonding layer disposed on a front side of the bottom die. The top die includes: a second active region surrounded by a second seal ring region; a second seal ring region including a top seal ring; and a second bonding layer disposed on a front side of the top die. The bottom die and the top die are bonded through hybrid bonding between the first bonding layer and the second bonding layer at an interface therebetween such that the bottom seal ring and the top seal ring are vertically aligned and are operable to form a continuous seal ring.

Abstract: A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

Abstract: An integrated circuit chip package and a method of fabricating the same are disclosed. The method includes forming a device layer on a substrate with a first die and a second die, forming an interconnect structure on the device layer, depositing an insulating layer on the interconnect structure, forming first and second conductive pads on the interconnect structure, forming first and second conductive vias on the first and second conductive pads, respectively, patterning a polymer layer to form first and second buffer layers with tapered side profiles on the first and second conductive vias, respectively, forming a trench in the substrate and between the first and second buffer layers, and dicing the substrate through the trench to separate the first die from the second die. Portions of the first and second conductive pads extend over the insulating layer.

Abstract: A package structure including IPD and method of forming the same are provided. The package structure includes a die, an encapsulant laterally encapsulating the die, a first RDL structure disposed on the encapsulant and the die, an IPD disposed on the first RDL structure and an underfill layer. The IPD includes a substrate, a first connector on a first side of the substrate and electrically connected to the first RDL structure, a guard structure on a second side of the substrate opposite to the first side and laterally surrounding a connector region, and a second connector disposed within the connector region and electrically connected to a conductive via embedded in the substrate. The underfill layer is disposed to at least fill a space between the first side of the IPD and the first RDL structure. The underfill layer is separated from the connector region by the guard structure.

Abstract: A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.

Abstract: A package structure including IPD and method of forming the same are provided. The package structure includes a die, an encapsulant laterally encapsulating the die, a first RDL structure disposed on the encapsulant and the die, an IPD disposed on the first RDL structure and an underfill layer. The IPD includes a substrate, a first connector on a first side of the substrate and electrically connected to the first RDL structure, a guard structure on a second side of the substrate opposite to the first side and laterally surrounding a connector region, and a second connector disposed within the connector region and electrically connected to a conductive via embedded in the substrate. The underfill layer is disposed to at least fill a space between the first side of the IPD and the first RDL structure. The underfill layer is separated from the connector region by the guard structure.

Abstract: A package structure including IPD and method of forming the same are provided. The package structure includes a die, an encapsulant laterally encapsulating the die, a first RDL structure disposed on the encapsulant and the die, an IPD disposed on the first RDL structure and an underfill layer. The IPD includes a substrate, a first connector on a first side of the substrate and electrically connected to the first RDL structure, a guard structure on a second side of the substrate opposite to the first side and laterally surrounding a connector region, and a second connector disposed within the connector region and electrically connected to a conductive via embedded in the substrate. The underfill layer is disposed to at least fill a space between the first side of the IPD and the first RDL structure. The underfill layer is separated from the connector region by the guard structure.

Abstract: A semiconductor package includes a die, an insulation layer, a plurality of first electrical conductive vias, a plurality of second electrical conductive vias, a plurality of thermal conductive vias and a connecting pattern. The die includes a plurality of first pads and a plurality of second pads. The insulation layer is disposed on the die and includes a plurality of openings exposing the first pads and the second pads. The first electrical conductive vias and the second electrical conductive vias are disposed in the openings and contact the first pads and the second pads respectively. The thermal conductive vias are disposed on the insulation layer. The connecting pattern is disposed on the insulation layer and connects the first electrical conductive vias and the thermal conductive vias. The thermal conductive vias are connected to the first pads through the connecting pattern and the first electrical conductive vias.

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

Abstract: A method of manufacturing a semiconductor package includes forming an encapsulated semiconductor device and forming a redistribution structure over the encapsulated semiconductor device, where the encapsulated semiconductor device includes a semiconductor device encapsulated by an encapsulating material. Forming the redistribution structure includes forming a first dielectric layer on the encapsulated semiconductor device, and forming a first redistribution circuit layer on the first dielectric layer by a plating process carried out at a current density of substantially 4˜6 amperes per square decimeter, where the first dielectric layer comprises a first via opening. An upper surface of the first redistribution circuit layer filling the first via opening is substantially coplanar with an upper surface of the rest of the first redistribution circuit layer.

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

Abstract: A redistribution structure includes a first dielectric layer and a first redistribution circuit layer. The first dielectric layer includes a first via opening. The first redistribution circuit layer is disposed on the first dielectric layer and includes a via portion filling the first via opening and a circuit portion connecting the via portion and extending over the first dielectric layer. A maximum vertical distance between an upper surface of the via portion and an upper surface of the circuit portion is substantially equal to or smaller than 0.5 ?m.

Abstract: An embodiment is a structure including a first die, a molding compound at least laterally encapsulating the first die, a first redistribution structure including metallization patterns extending over the first die and the molding compound, a first conductive connector comprising a solder ball and an under bump metallization coupled to the first redistribution structure, and an integrated passive device bonded to a first metallization pattern in the first redistribution structure with a micro bump bonding joint, the integrated passive device being adjacent the first conductive connector.

Abstract: A package structure, a die and method of forming the same are provided. The package structure includes a die, an encapsulant, a RDL structure, and a conductive terminal. The die has a connector. The connector includes a seed layer and a conductive on the seed layer. The seed layer extends beyond a sidewall of the conductive pillar. The encapsulant is aside the die and encapsulates sidewalls of the die. The RDL structure is electrically connected to the die. The conductive terminal is electrically connected to the die through the RDL structure.