Abstract: The present invention relates to photo-crosslinkable liquid crystal monomers with optical activity. The liquid crystal monomers contains one chiral center with an acrylate group or terminal diacrylate groups, and terminal dibenzene rings are introduced in order to extend its hard segment for the purpose of getting a wider liquid crystalline phase. By introducing the liquid crystal monomers, the room temperature nematic liquid crystal or the cholesteric liquid crystal may have a better mutual solubility and a wider, steadier structure of liquid crystal.

Abstract: A pixel structure and manufacturing method of the same are described. The pixel structure includes a substrate, a switch transistor, a dielectric layer, a conducting connection line, a driving transistor, a capacitor and a pixel electrode. The substrate defines a transistor region and the switch transistor is disposed on the transistor region. The dielectric layer is disposed on the substrate and covers the switch transistor. The conducting connection line disposed on the dielectric layer is located over the transistor region. The driving transistor disposed on the dielectric layer is vertically stacked over the switch transistor and transistor region. The conducting connection line electrically connects the switch transistor to the driving transistor. The pixel electrode is electrically connected to the driving transistor.

Abstract: A blue phase liquid crystal composition includes a chiral dopant, a positive liquid crystal component and a negative liquid crystal component. The positive liquid crystal component includes at least one positive liquid crystal material, has a positive dielectric anisotropy and has no blue phase properties with respect to the chiral dopant. In addition, the negative liquid crystal component includes at least one negative liquid crystal material, has a negative dielectric anisotropy and has no blue phase properties with respect to the chiral dopant, so that the blue phase liquid crystal composition has a dielectric anisotropy between 0.5 and 14 and a blue phase temperature range larger than 3° C.

Abstract: In one embodiment, a system includes an operating environment comprising a structural test module that is configured to perform a structural test on a device-under-test (DUT); and a functional test module that, when activated, is configured to perform a non-JTAG-based functional *test on the DUT. The operating environment is configured to switch between the structural test module being activated and the functional test module being activated.

Abstract: A method for driving an LCD panel and an LCD using the same are provided. The method includes following steps. Firstly, a number of scan signals are provided sequentially, and an enabling time of the scan signals excluding the last scan signal is adjusted according to a compensation time, so as to unfix the enabling time of these scan signals. Next, the scan signals having the unfixed enabling time are sequentially provided to an LCD panel, so as to turn on a number of row pixels of the LCD panel one by one. Thereby, the entire brightness of the LCD can be uniformed by applying the method disclosed in the present invention.

Abstract: A capacitance sensing circuit for a touch panel includes an analog capacitance-detecting circuit, a PWM-to-digital circuit and a self-calibration circuit. The analog capacitance-detecting circuit detects the capacitance of the touch panel based on a charging current, and converts the detected capacitance into a PWM control signal. The PWM-to-digital circuit converts the PWM control signal into a sensing count value based on a clock signal. The self-calibration circuit adjusts the value of the charging current or the frequency of the clock signal according to the difference between the range of the sensing count value and a predetermined detecting range. The predetermined detecting range can thus be adjusted for matching the range of the sensing count value.

Abstract: A top-gate transistor array substrate includes a transparent substrate with a plane, an ion release layer, a pixel array, and a first insulating layer. The ion release layer is disposed on the transparent substrate and completely covers the plane. The pixel array is disposed on the ion release layer and includes a plurality of transistors and a plurality of pixel electrodes. Each of the transistors includes a source, a drain, a gate and a MOS (metal oxide semiconductor) layer. The drain, the source and the MOS layer are disposed on the ion release layer. The pixel electrodes are electrically connected to the drains respectively. The gate is disposed above the MOS layer. The first insulating layer is disposed between the MOS layers and the gates. The MOS layer contacts the ion release layer. The ion release layer can release a plurality of ions into the MOS layers.

Abstract: A method of electrophoretic deposition includes: providing an electrophoresis tank, an anode substrate, and a cathode substrate; disposing the anode substrate and the cathode substrate oppositely in the electrophoresis tank; adjusting relative positions of the cathode substrate and the anode substrate for varying each of the distances between corresponding regions on the cathode substrate and the anode substrate; and inputting cathode voltage and anode voltage respectively to a cathode electrode of the cathode substrate and a anode electrode of the anode substrate for performing the electrophoretic deposition.

Abstract: An exemplary operating method of a capacitive touch panel adapted to a touch control barrier-type three-dimensional display device and including a sensing device is disclosed. In the operating method, a sensing voltage readout operation is performed only during a signal caused by a transient of a barrier voltage is smaller than a preset value. The voltage readout operation includes steps of: providing a first driving signal to the sensing device for performing the sensing voltage readout operation during the barrier voltage is at a logic high level; and providing a second driving signal to the sensing device for performing the sensing voltage readout operation during the barrier voltage is at a logic low level. A pulse amplitude of the first driving signal is smaller than that of the second driving signal.

Abstract: The present invention relates to photo-crosslinkable liquid crystal monomers with optical activity. The liquid crystal monomers contains one chiral center with an acrylate group or terminal diacrylate groups, and terminal dibenzene rings are introduced in order to extend its hard segment for the purpose of getting a wider liquid crystalline phase. By introducing the liquid crystal monomers, the room temperature nematic liquid crystal or the cholesteric liquid crystal may have a better mutual solubility and a wider, steadier structure of liquid crystal.

Abstract: A three-dimensional image processing method and a three-dimensional image processing circuit using the above method are provided. The method is configured for processing N source images, and N is a natural number and is larger than or equal to two. Each of the source images corresponds to a visual angle, and each of the source images comprises image data with three primary colors. The image data of each of the source images are arranged in an array according to a predetermined color sequence. In the method, six parameters are provided firstly, wherein each of the six parameters is configured for defining a basic data-arrangement variation. Then, the image data with three primary colors of the N source image are obtained according to the six parameters, so as to form a three-dimensional image.

Abstract: A fluorescence material and a white light illumination element are provided. The white light illumination element includes a light emitting diode (LED) chip, a first fluorescence material, and a second fluorescence material. The LED chip is configured on a substrate and emits an exciting light. The first fluorescence material and the second fluorescence material are configured on the LED chip. A composition of the first fluorescence material includes an aluminum nitride oxide doped with at least one of europium (Eu) and manganese (Mn). A first emitted light emitted by the first fluorescence material after the first fluorescence material absorbs the exciting light emitted from the LED chip and a second emitted light emitted by the second fluorescence material after the second fluorescence material absorbs the exciting light emitted from the LED chip are mixed to generate a white light.

Abstract: A blue phase liquid crystal composition includes a chiral dopant, a positive liquid crystal component and a negative liquid crystal component. The positive liquid crystal component includes at least one positive liquid crystal material, has a positive dielectric anisotropy and has no blue phase properties with respect to the chiral dopant. In addition, the negative liquid crystal component includes at least one negative liquid crystal material, has a negative dielectric anisotropy and has no blue phase properties with respect to the chiral dopant, so that the blue phase liquid crystal composition has a dielectric anisotropy between 0.5 and 14 and a blue phase temperature range larger than 3° C.

Abstract: A reflective liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer, a first alignment layer, and a second alignment layer. The first substrate and the second substrate are disposed oppositely to each other. The liquid crystal layer is disposed between the first substrate and the second substrate. The liquid crystal layer includes a plurality of liquid crystal molecules for reflecting light within a wavelength range and allowing light beyond the wavelength range to pass through. The second alignment layer is disposed on an inner side of the first substrate facing the second substrate, and the second alignment layer is employed to absorb the light passing through the liquid crystal layer and align the liquid crystal molecules.

Abstract: A vertical thin film transistor and a method for manufacturing the same and a display device including the vertical thin film transistor and a method for manufacturing the same are disclosed. The vertical thin film transistor is applied to a substrate. In the present invention, a gate layer of the vertical thin film transistor is formed to have a plurality of concentric annular structures and the adjacent concentric annular structures are linked. By the concentric annular structures of the gate electrode layer, resistance to stress and an on-state current of the vertical thin film transistor can be increased.

Abstract: A thin film transistor (TFT) array substrate includes a substrate and a pixel array. The pixel array is disposed on the substrate and includes a plurality of transistors and a plurality of reflective electrodes. Each transistor includes a gate, a drain, a source, and a channel layer. In each transistor, the channel layer is located between the gate and the drain, and between the gate and the source. The channel layer is partially overlapped with the gate, the drain and the source. The reflective electrodes are electrically connected to the drains respectively. Each reflective electrode includes a plurality of dyeing particles and a conductive layer. The dyeing particles are distributed in the conductive layer.

Abstract: A touch panel and a portable electronic device thereof are provided. The present invention can accurately determine a position touched by a user on the touch panel by judging whether or not a potential voltage value between a reference capacitor and a sensing capacitor of a pixel having a sensing area being changed, or to determine whether a switch of a pixel having the sensing area being conducted.

Abstract: A manufacturing method of thin film transistors is provided. The manufacturing method includes: providing a substrate; forming a gate electrode; forming a gate insulating layer; forming a patterned oxide semiconductor layer; forming a source electrode and a drain electrode; and executing a localized laser treatment. A laser beam is used to irradiate at least a part of the patterned oxide semiconductor layer in the localized laser treatment. An electrical resistitivity of the patterned oxide semiconductor layer irradiated by the laser beam is lower than an electrical resistitivity of the patterned oxide semiconductor layer without being irradiated by the laser beam.

Abstract: Disclosed is an ink-jet device applicable to various ink-jet equipments. The device includes an ink reservoir, an ink chamber, pressure generating units and an ink-jet head. The ink-jet head has dielectric layers coated on an inner surface and an outer surface thereof. By applying a voltage to the dielectric layers, the dielectric layers are changed to be hydrophobic or hydrophilic, so as to reduce residual ink accumulated in the ink-jet head during the ink-jetting process, hence improving ink-jetting accuracy.

Abstract: In a capacitance sensing analog circuit of a touch panel sensing circuit, by raising a magnitude of a current flowing through a sensing capacitor to form an amplified sensing capacitance, while sensing the amplified sensing capacitance with the aid of pulse width modulation signals, higher resolution of the original sensing capacitance may thus be achieved. Besides, by using a self-calibrating capacitance sensing circuit on the touch panel sensing circuit, linear errors and DC errors of an output signal of the capacitance sensing analog circuit may be filtered off, and thereby resolution of a capacitance amplifying ratio may be effectively raised so as to relieve errors within the capacitance amplifying ratio caused by noises.