Abstract: An electronic device includes a first substrate having a first bonding region, a first circuit, a second circuit, a third circuit, and a plurality of first conductive contacts. The first and second circuit are located at a first edge and a second edge of the first bonding region, the third circuit is located between the first and the second circuits. A second substrate having a second bonding region corresponding to the first bonding region in position and a fourth circuit, a fifth circuit, a sixth circuit, and a plurality of second conductive contacts. When the first substrate is bonded with the second substrate, the first circuit, the second circuit, the third circuit, the fourth circuit, the fifth circuit, and the sixth circuit form a loop, and the first and second conductive contacts are electrically connected to a plurality of signal circuits.

Abstract: A combined catalytic viscosity reducing system includes a catalyst slug, a heat generating system slug, a gas injection slug, and a water-soluble viscosity reducing system slug. The catalyst slug includes 10%-15% of azacarbene iron, 15%-30% of tert-butyl hydroperoxide, 2%-5% of phosphoric acid, 2%-5% of hydrogen donor, and 0.5%-1% of emulsifier agent, and the others are solvent. The heat generating system slug includes 10%-30% of NaNO2, 8%-25% of NH4Cl, and 3%-10% of acid initiator, and the others are water, totaling 100%. The water-soluble viscosity reducing system slug, according to mass percentage, includes 0.2%-0.5% of surfactant and 2%-10% of alkali, and the others are water. The combined catalytic viscosity reducing system can effectively reduce viscosity without injecting steam, and the viscosity reduction rate can reach 96.5%.

Abstract: A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.

Abstract: Disclosed are a caffeic acid-based composite material and a preparation method thereof. The method includes: exposing a cyclodextrin metal-organic framework material prepared from ?-cyclodextrin to a solution of caffeic acid in a short-chain alcohol to obtain a mixed material; and incubating the mixed material, wherein during the incubating, the cyclodextrin metal-organic framework material is in dynamic contact with the solution of caffeic acid in a short-chain alcohol. The prepared composite material includes a cyclodextrin metal-organic framework material and caffeic acid loaded on the cyclodextrin metal-organic framework material, wherein the cyclodextrin metal-organic framework material is prepared from ?-cyclodextrin. The caffeic acid is loaded in an amount of 15-18% of a total mass of the caffeic acid-based composite material. The caffeic acid is located in a cavity of the cyclodextrin metal-organic framework material.

Abstract: An aza-ergoline derivative and a preparation method therefor and an application thereof. The derivative has a structure as shown in formula (I). The aza-ergoline derivative has good affinity, agonistic activity or selectivity to a dopamine D2 receptor.

Abstract: The present disclosure discloses a method for extracting pectin rich in RG-I, in particular to an ultrasound and pressure assisted method for extracting pectin rich in RG-I. The main process includes: dispersing sieved citrus peel powers in alkaline solution containing sodium borohydride (20 to 50 mM); performing an ultrasound and pressure combined treatment on the above solution at 25 to 40° C., the treatment conditions include: static pressure of 0.2 to 0.4 MPa, ultrasonic intensity of 0.5 to 3.5 W/mL, and treatment time of 20 to 40 min; centrifuging the ultrasonically processed solution to remove residues, and sequentially carrying out precipitation with ethanol (50% to 80% v/v), precipitant dialysis (3000 to 3500 Da), and vacuum freeze drying on the extracted solution to obtain pectic polysaccharide.

Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.

Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.

Abstract: A method of forming a semiconductor device includes forming semiconductor strips protruding above a substrate and isolation regions between the semiconductor strips; forming hybrid fins on the isolation regions, the hybrid fins comprising dielectric fins and dielectric structures over the dielectric fins; forming a dummy gate structure over the semiconductor strip; forming source/drain regions over the semiconductor strips and on opposing sides of the dummy gate structure; forming nanowires under the dummy gate structure, where the nanowires are over and aligned with respective semiconductor strips, and the source/drain regions are at opposing ends of the nanowires, where the hybrid fins extend further from the substrate than the nanowires; after forming the nanowires, reducing widths of center portions of the hybrid fins while keeping widths of end portions of the hybrid fins unchanged, and forming an electrically conductive material around the nanowires.

Abstract: Examples of an integrated circuit with FinFET devices and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate, a fin extending from the substrate, a gate disposed on a first side of the fin, and a gate spacer disposed alongside the gate. The gate spacer has a first portion extending along the gate that has a first width and a second portion extending above the first gate that has a second width that is greater than the first width. In some such examples, the second portion of the gate spacer includes a gate spacer layer disposed on the gate.

Abstract: A pellicle for an extreme ultraviolet (EUV) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing Si and one or more metal elements.

Abstract: A touch display device includes a driving substrate, a display medium layer, a conductive film, a touch panel, a circuit board and a reinforcing structure layer. The driving substrate includes a first portion, a second portion and a bending portion connecting the first portion and the second portion. The display medium layer is disposed on the first portion of the driving structure. The conductive film is disposed on the first portion of the driving structure and located on the display medium layer. The touch panel is disposed on the first portion of the driving substrate and located on the conductive film. The circuit board is disposed on the second portion of the driving substrate. The reinforcing structure layer is disposed on the bending portion of the driving substrate and extends to the first portion to seal the space.

Abstract: The present disclosure provides a semiconductor manufacturing method and a system therefore. The semiconductor manufacturing method includes: providing a gas from a container through an outlet to a semiconductor wafer manufacturing equipment, wherein a control valve is connected to the outlet to control a gas flow; retrieving a set of parameters corresponding to the gas flow; and determining a nominal position of the control valve by incorporating the set of parameters through a processor in order to provide a desired flow passage into the semiconductor wafer manufacturing equipment, wherein the semiconductor wafer manufacturing equipment includes a plurality of independent reaction chambers, wherein each reaction chamber is individually supplied with a gas pipe, and each gas pipe receives the gas from the container.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first channel structure and a second channel structure over a substrate. The semiconductor device structure also includes a first gate stack over the first channel structure, and the first gate stack has a first width. The semiconductor device structure further includes a second gate stack over the second channel structure. The second gate stack has a protruding portion extending away from the second channel structures. The protruding portion of the second gate stack has a second width, and half of the first width is greater than the second width.

Abstract: A semiconductor package including two different adhesives and a method of forming are provided. The semiconductor package may include a package component having a semiconductor die bonded to a substrate, a first adhesive over the substrate, a heat transfer layer on the package component, and a lid attached to the substrate by a second adhesive. The first adhesive may encircle the package component and the heat transfer layer. The lid may include a top portion on the heat transfer layer and the first adhesive, and a bottom portion attached to the substrate and encircling the first adhesive. A material of the second adhesive may be different from a material of the first adhesive.

Abstract: A computer-implemented framework and/or system for cyberbullying detection is disclosed. The system includes two main components: (1) A representation learning network that encodes the social media session by exploiting multi-modal features, e.g., text, network, and time; and (2) a multi-task learning network that simultaneously fits the comment inter-arrival times and estimates the bullying likelihood based on a Gaussian Mixture Model. The system jointly optimizes the parameters of both components to overcome the shortcomings of decoupled training. The system includes an unsupervised cyberbullying detection model that not only experimentally outperforms the state-of-the-art unsupervised models, but also achieves competitive performance compared to supervised models.

Abstract: The embodiments of the disclosure provide a method for zooming a visual content, a host, and a computer readable medium. The method includes: detecting a first wink movement of a first eye of a user and detecting a second wink movement of a second eye of the user; in response to determining that the first wink movement matches a first predetermined wink movement but the second wink movement fails to match a second predetermined wink movement, zooming in the visual content; and in response to determining that the second wink movement matches a second predetermined wink movement but the first wink movement fails to match the first predetermined wink movement, zooming out the visual content.

Abstract: A detection system and a portable detection device for detecting an object of interest in a lateral flow immunoassay strip. The lateral flow immunoassay strip has a detection carrier and a reporter, the detection carrier has a control zone and a test zone. The detection system has a laser light source, a scanning and spatial modulation module, a signal acquisition assembly, and a processing device. The laser light source provides a laser light. The scanning and spatial modulation module receives the laser light, and then provides a scanning and spatially modulating laser beam for irradiating a lateral flow immunoassay strip to generate a detecting signal. The signal acquisition assembly receives the detecting signal. The processing device electronic connects to the signal acquisition assembly and receives the detecting signal from the signal acquisition assembly.

Abstract: The present disclosure discloses an ultrasonic-assisted method of extracting a pectin rich in RG-I. The method includes: (1) dispersing citrus peel powders in an alkaline solution containing sodium borohydride; (2) placing a solution obtained in step (1) in a water bath of 25 to 40° C., and performing an ultrasonic treatment on the solution obtained in step (1); (3) centrifuging the solution subjected to step (2) at a speed of 6000-8000 rpm to remove residues, retaining a supernatant, and precipitating a pectic polysaccharide with absolute ethanol; and (4) adding water to the pectic polysaccharide precipitant subjected to step (3) to obtain a redissolved solution, transferring the solution to a dialysis bag with a molecular weight cut-off of 3000 to 3500 Da, dialyzing for 48 hours, and freeze-drying in a vacuum freezer to obtain the pectin rich in RG-I.

Abstract: Embodiments relate to a control method, apparatus, system, device and medium for production equipment. The method includes: receiving a recipe upload instruction, and generating a first control instruction in response to the recipe upload instruction to control the production equipment to upload first recipe data; receiving the first recipe data, and parsing the first recipe data to generate a corresponding first recipe file in a preset format; generating a second control instruction during parsing the first recipe data to control the production equipment to upload second recipe data; and receiving the second recipe data, and parsing the second recipe data to generate a corresponding second recipe file in a preset format.