Abstract: Disclosed are a double-response self-degradable temporary plugging agent and a preparation method thereof. The double-response self-degradable temporary plugging agent is prepared by compounding a crosslinkable monomer with a temperature-sensitive degradability and an inorganic material with an acid solubility with a first monomer, a dispersant, an initiator and water, and subjecting the resulting mixture to a polymerization.

Abstract: Provided are a heat dissipation fin construction method, a related apparatus, and a heat dissipation fin. The heat dissipation fin construction method comprises: setting a plurality of structural parameter sets according to the preset numerical ranges of the twill angle, the wave amplitude, and the wavelength of a heat dissipation fin; separately obtaining respective heat transfer coefficients and air side pressure drops of the structural parameter sets, and establishing a fitting relationship between the heat transfer coefficients and the air side pressure drops for structural parameters; generating a corresponding performance map and a corresponding contour map on the basis of performance data of the fitted structural parameter sets; and determining an optimization interval of the wave amplitude and the wavelength of the heat dissipation fin according to the contour map, and constructing the heat dissipation fin according to the optimization interval.

Abstract: Embodiments herein relate to prediction, based on previous usage of a cloud-based computing resource by a user of one or more users of the cloud-based computing resource, future usage of the cloud-based computing resource. Based on the predicted future usage, embodiments relate to identifying that throttling of access to the cloud-based computing resource is to occur, and notifying the user of the throttling. Other embodiments may be described and/or claimed.

Abstract: A terminal is disclosed including a selection unit that selects first resource candidates for sidelink transmission based on monitoring in a sensing window, and specifies second resource candidates by excluding specific periodic resources that are reserved by another terminal from the first resource candidates; and a transmission unit that performs sidelink transmission using a resource selected from the second resource candidates. In another aspect, a transmission method executed by a terminal is also disclosed.

Abstract: The present invention belongs to the technical field of biomass carbon materials, and relates to a lignin porous carbon nanosheet, a preparation method therefor, and an application thereof in supercapacitor electrode materials. The method of the present invention performs layer-by-layer self-assembly of sulfonated lignin and oxalate in a selective solvent to prepare a layer-by-layer self-assembled lignin/oxalate composite, which is then carbonized and pickled to obtain the lignin porous carbon nanosheets. The lignin porous carbon nanosheets prepared by the above method of the present invention have a specific surface area of 200-1500 m2/g, a micropore specific surface area of 100-500 m2/g, a mesoporous specific surface area of 100-1000 m2/g, a pore diameter of 0.5-30 nm, and a pore volume of 0.5-1.5 cm3/g; they can be applied to supercapacitor electrode materials, showing higher specific capacitance and excellent rate performance (with a specific capacitance retention rate of 76.

Abstract: A method for determining a resource in a shared band includes performing, by a first terminal, SL sensing; and determining, based on the SL sensing, a resource or candidate resource N indicated or reserved by a second terminal.

Abstract: Beam forming antennas for base station applications are configured as dielectric resonator antennas (DRAs) having arrays of dielectric resonator radiating elements (DRRE) therein with dual-polarized radiating properties. Each DRRE includes a dielectric radiating element (DRE) electromagnetically coupled by a resonant cavity to a respective cross-polarized feed network, which is responsive to first and second radio frequency (RF) input feed signals. Each resonant cavity may be configured as a polymer-filled resonant cavity, and each DRE may be configured as a cylindrically-shaped or dome-shaped dielectric radiating element.

Abstract: An antenna includes a cross-polarized feed signal network configured to convert first and second radio frequency (RF) input feed signals into first and second pairs of cross-polarized feed signals at respective first and second pairs of feed signal output ports. A patch carrier is provided on the cross-polarized feed signal network. The patch carrier includes a substrate having a plurality of cavities therein, and first and second pairs of feed signal lines, which are electrically coupled to the first and second pairs of feed signal output ports and extend on sidewalls of the plurality of cavities. A patch radiating element is provided on the patch carrier. The patch radiating element is capacitively coupled to the first and second pairs of feed signal lines.

Abstract: The invention relates to a wide spectrum multi-band detection structure with selective absorption enhancement and its preparation method. The structure comprises a plurality of sub-pixel units capable of detecting incident light in different bands. Each sub-pixel unit is composed of a square well-shaped microstructure array and a metal lower electrode (2), a photosensitive layer (3) and an upper electrode (4) on the surface thereof. The size and array spacing of square well-shaped microstructures in different sub-pixel units are determined according to the detection bands of the sub-pixel units where they are located. The upper openings of the square well-shaped microstructures are hollow to form a resonant cavity, and the adjacent square well-shaped microstructures in the same sub-pixel unit form a resonant cavity, thus solving the problem that the detector structure in the prior art cannot simultaneously realize visible light-near infrared multi-band absorption enhancement detection.

Abstract: A resource recommendation method and a transport resource determining method and apparatus. The resource recommendation method includes: determining, by a first terminal, a recommended resource to be recommended to a second terminal, where the recommended resource is associated with one or more of the following: a sensing result by the first terminal; transmit resources for the first terminal; receive resources for the first terminal; and resources recommended by the first terminal to third terminals, the third terminals being terminals other than the second terminal; and/or transmitting, by the first terminal, first information to the second terminal, where the first information includes information related to the recommended resource and/or second information, the second information indicating whether the recommended resource is for transport by the second terminal to the first terminal.

Abstract: A resistive memory device includes a dielectric layer, a via connection structure, a stacked structure, and an insulating structure. The via connection structure is disposed in the dielectric layer. The stacked structure is disposed on the via connection structure and the dielectric layer. The insulating structure penetrates through the stacked structure in a vertical direction and divides the stacked structure into a first memory cell unit and a second memory cell unit. The first memory cell unit includes a first bottom electrode, and the second memory cell unit includes a second bottom electrode separated from the first bottom electrode by the insulating structure. The via connection structure is electrically connected with the first bottom electrode and the second bottom electrode.

Abstract: A method comprises forming a gate dielectric cap over a gate structure; forming source/drain contacts over the semiconductor substrate, with the gate dielectric cap laterally between the source/drain contacts; depositing an etch-resistant layer over the gate dielectric cap; depositing a contact etch stop layer over the etch-resistant layer and an interlayer dielectric (ILD) layer over the contact etch stop layer; performing a first etching process to form a via opening extending through the ILD layer and terminating prior to reaching the etch-resistant layer; performing a second etching process to deepen the via opening such that one of the source/drain contacts is exposed, wherein the second etching process etches the etch-resistant layer at a slower etch rate than etching the contact etch stop layer; and depositing a metal material to fill the deepened via opening.

Abstract: A user equipment includes a transmitting unit configured to transmit a groupcast to a group including a plurality of user equipments, a receiving unit configured to receive a response related to a retransmission control for the groupcast, and a control unit configured to control a leakage power to another channel arranged by frequency division with a channel via which a response related to the retransmission control for the groupcast is received.

Abstract: A slide staining apparatus for staining of cells and tissue samples on slides before pathological analysis. The apparatus is operable to stain multiple sets of slides simultaneously and configured with a reagent system having a plurality of reagents. The Apparatus includes a slide counter, a controller having a non-transitory memory component with instructions thereon, and a processor configured to determine a count of a set of received slides since the regent system was installed. When the count is below a threshold, the first protocol is used. When the count is above the threshold, slides in-progress are stained, and newly received slides are stained with a second protocol, the first protocol having an eosin reagent step followed by a 95% ethanol reagent step of a first duration, the second protocol having an eosin reagent step followed by a 95% ethanol reagent step of a second duration less than the first duration.

Abstract: A gear shifting mechanism includes a drive motor, a shifting drum, and a first shifting mechanism. The first shifting mechanism includes a first shifting fork, an inner shaft, an outer hub, a first coupling pin, and an elastic component. The elastic component is sleeved on the inner shaft and is located between the inner shaft and the outer hub. There is a first limiting portion and a second limiting portion between the outer hub and the inner shaft. The elastic component is located between the first limiting portion and the second limiting portion. The first limiting portion is connected to one of the outer hub and the inner shaft, and the second limiting portion is connected to the other of the outer hub and the inner shaft.

Abstract: A logic cell structure includes a first portion, a second portion and a third portion. The first portion, arranged to be a first layout of a first semiconductor element, is placed in a first cell row of a substrate area extending in a first direction. The second portion, arranged to be a second layout of a second semiconductor element, is placed in a second cell row of the substrate area. The third portion is arranged to be a third layout of an interconnecting path used for coupling the first semiconductor element and the second semiconductor element. The first, second and third portions are bounded by a bounding box with a height in a second direction and a width in the first direction. Respective centers of the first portion and the second portion are arranged in a third direction different from each of the first direction and the second direction.