Abstract: This disclosure provides for methods and system for meta few-shot class incremental learning. According to an aspect a method is provided. The method includes obtaining at least one weight attention map of a first network and updating weights of a second network using the at least one weight attention map, where the second network is a modulatory network. The method further includes generating at least one feature attention map of the second network based on the at least one weight attention map of the first network and a set of input images of at least one class. The method further includes generating at least one feature map of the first network based on the set of input images of the at least one class, and updating the at least one feature map of the first network based on the feature attention map of the second network.

Abstract: Disclosed are a method for determining a platelet concentration of a blood sample, a hematology system and a storage medium.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: In some embodiments, digital logic components, such as those found in standard cells in integrated circuit devices, are used to synthesize signals with controllable waveforms that result in transmitted signals that meet certain requirements, such as above-threshold high openings and below-threshold over/under-shooting. In some embodiments, driving buffers with logic controls and delay chains are used to achieve controllable slew rates at rising and falling edges to minimize over/under shooting behavior in signals. In some embodiments, control logic and delay chains produce controllable rising/falling “stair-type” edges to obtain optimized damping waveform.

Abstract: An aza-ergoline derivative and a preparation method therefor and an application thereof. The derivative has a structure as shown in formula (I). The aza-ergoline derivative has good affinity, agonistic activity or selectivity to a dopamine D2 receptor.

Abstract: This application relates to the field of lighting, and discloses an LED filament. The LED filament includes an LED chip unit, a light conversion layer, and an electrode. The light conversion layer covers the LED chip unit and part of the electrode, and a color of a light emitted by the LED filament after lighting is different from a color of the light conversion layer. This application has the characteristics of uniform light emission and good heat dissipation effect.

Abstract: Disclosed are a double-response self-degradable temporary plugging agent and a preparation method thereof. The double-response self-degradable temporary plugging agent is prepared by compounding a crosslinkable monomer with a temperature-sensitive degradability and an inorganic material with an acid solubility with a first monomer, a dispersant, an initiator and water, and subjecting the resulting mixture to a polymerization.

Abstract: A preparation method for a silver (Ag) and graphitic carbon nitride (g-C3N4) co-modified zinc oxide (ZnO) nanocomposite material using a polymer network gel method includes: dispersing zinc oxide, bulk graphitic carbon nitride, and a soluble silver salt in water to obtain a first solution; adding glucose, a complexing agent, a polymer monomer, and a cross-linking agent into the first solution to obtain a second solution; performing a heating reaction on the second solution to obtain a three-dimensional network wet gel; drying the three-dimensional network wet gel to obtain a dry gel, and calcining the dry gel to obtain the Ag and g-C3N4 co-modified ZnO nanocomposite material. The preparation method has advantages of low cost, short period and simple steps; and the prepared nanocomposite material can be simultaneously applied to photocatalytic degradation of organic dye pollutants and photoexcitation detection of nitrogen dioxide gas at room temperature.

Abstract: The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a top surface and a bottom surface, a first silicide layer formed in contact with the top surface of the source/drain feature, a first conductive feature formed on the first silicide layer, and a second conductive feature having a body portion and a first sidewall portion extending from the body portion, wherein the body portion is below the bottom surface of the source/drain feature, and the first sidewall portion is in contact with the first conductive feature.

Abstract: In a method of manufacturing an electronic package, first grooves are formed on a circuit structure and a second groove is formed in each of the first grooves to allow the circuit structure to become circuit layers. Owing to the second groove is narrower than the first groove, each of the circuit layers has an encircled surface and a notch located on the encircled surface. When a shielding layer is provided to cover an encapsulating body located on the circuit layer, a space of the notch is not covered by the shielding layer such that a portion to be removed of the shielding layer will not remain on the electronic package to become burr after removing the portion to be removed.

Abstract: A method for controlling a traffic light, a method and apparatus for navigating an unmanned vehicle and a method and apparatus for training a model are provided. An implementation comprises: generating a reinforced traffic light state parameter according to vehicle state representation information of an unmanned vehicle currently contained in a preset area of a target traffic light and a current traffic light state parameter of the target traffic light; and generating a traffic light control action according to the reinforced traffic light state parameter; where the reinforced traffic light state parameter is used to cause an unmanned vehicle navigation end to generate a reinforced vehicle state parameter according to a reinforced traffic light state and a current vehicle state parameter of a target unmanned vehicle, and generate an unmanned vehicle navigation action according to the reinforced vehicle state parameter.

Abstract: A hinge device includes a fixed shaft, a rotating sleeve, a fixed connection member, a torsion spring, a rotating connection member and a friction resistance assembly. The rotating sleeve is rotatably mounted on the fixed shaft and is located between a fixed end and a free end. One end of the fixed connection member is fixedly connected to the free end, and the other end is provided with a first slot. Two ends of the torsion spring are respectively equipped with a first snap-in pin and a second snap-in pin. The first snap-in pin inserts into the first slot. An extension part protrudes from a fixed part of the of the rotating connection member and is provided with a second slot. The second snap-in pin inserts into the second slot. The friction resistance assembly is disposed on the fixed shaft to provide torsional resistance to the rotating sleeve.

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.

Abstract: A circuit board utilizing thermocouples for improved heat dissipation performance from circuit boards includes a heat dissipation module which itself includes a first circuit substrate, a thermocouple, and a second circuit substrate. The first circuit substrate includes a first wiring layer comprising first and second wiring portions. The thermocouple includes a P-type and an N-type semiconductor. The second circuit substrate includes a second wiring layer with a third wiring portion. Conductive members electrically connect the P-type semiconductor with the first wiring portion, connect the P-type semiconductor with the third wiring portion, connect the N-type semiconductor with the second wiring portion, and connect the N-type semiconductor with the third wiring portion, to transfer away heat generated by working elements mounted on the board.

Abstract: In example implementations, a computing device is provided. The computing device includes a basic input/output system (BIOS), a memory, and a controller. The memory is to store a BIOS password, wherein the BIOS password includes a first part and a second part. The controller is to associate a first device with the first part and a second device with the second part.

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Abstract: The invention provides a sudden cardiac death susceptibility detection kit based on an insertion/deletion polymorphic site of COX10 gene. A specific primer pair contained in the kit is designed for the insertion/deletion site rs397763766 on the COX10 gene. DNA fragments containing the site are specifically amplified. Different genotypes are recognized by detecting the mobility of fragments different in length in capillary electrophoresis. In combination with findings in a case-control study, it is believed that an individual carrying a deletion-type allele at the insertion/deletion site rs397763766 of COX10 gene in the detected DNA is SCD susceptible. Therefore, the SCD susceptibility of an individual is predicted by detecting the genotype of the insertion/deletion site rs397763766 on the COX10 gene in the individual. It is confirmed that a two-base (CT) insertion/deletion polymorphism (rs397763766) located in the 3?UTR of the COX10 gene is significantly associated with the risk of suffering from SCD.

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first Group III-V semiconductor layer between the active region and the electron blocking structure; and a second Group III-V semiconductor layer between the electron blocking structure and the second semiconductor layer; wherein the first Group III-V semiconductor layer and the second Group III-V semiconductor layer each includes indium, aluminum and gallium, the first Group III-V semiconductor layer has a first indium content, the second Group III-V semiconductor layer has a second indium content, and the second indium content is less than the first indium content.

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.