Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: A controller used in an isolated switching converter having a transformer, a primary switch and a secondary switch. The controller has an error amplifying circuit, a control generator and an isolation circuit. The error amplifying circuit generates a first compensation signal based on the difference between a reference voltage and an output feedback signal. The control generator generates a first and second control signals based on the first compensation signal. The isolation circuit has a first channel for providing a first synchronous signal electrically isolated from the first control signal, for controlling a peak value of a current flowing through the primary switch, and has a second channel for providing a second synchronous signal electrically isolated from the second control signal, for controlling the switching frequency of the primary switch.

Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.

Abstract: An uneven-trench pixel cell includes a semiconductor substrate that includes a floating diffusion region, a photodiode region, and, between a front surface and a back surface: a first sidewall surface, a shallow bottom surface, a second sidewall surface, and a deep bottom surface. The first sidewall surface and a shallow bottom surface define a shallow trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A shallow depth of the shallow trench exceeds a junction depth of the floating diffusion region. The second sidewall surface and a deep bottom surface define a deep trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A distance between the deep bottom surface and the front surface defines a deep depth, of the deep trench, that exceeds the shallow depth.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: The present invention relates to the production of capsaicinoid compounds including Capsaicin and Nonivamide via microbial fermentation.

Abstract: An example apparatus for detecting objects in video frames includes a receiver to receive a plurality of video frames from a video camera. The apparatus also includes a first still image object detector to receive a first frame of the plurality of video frames and calculate localization information and confidence information for each potential object patch in the first frame. The apparatus further includes a second still image object detector to receive an adjacent frame of the plurality of video frames adjacent to the first frame and calculate localization information and confidence information for each potential object patch in the adjacent frame. The apparatus includes a similarity detector trained to detect paired patches between the first frame and the adjacent frame based on a comparison of the detected potential object patches.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.

Abstract: A flow splitting device for gas reverse circulation drilling, including: an upper joint for connecting with a double-wall drill pipe; an inner tube which is arranged in the upper joint and defines a first passageway in communication with an inner chamber of the double-wall drill pipe, a second passageway in communication with an annular space in the double-wall drill pipe formed between the inner tube and the upper joint; a lower joint, having an upper end fixedly connected with the upper joint and a lower end for connecting with a drill tool; and a flow guiding member provided between the upper joint and the lower joint. A flexible sealing mechanism is provided outside the upper joint. The flexible sealing mechanism extends radially outward relative to the upper joint and the lower joint to form a sealing contact with a wellbore wall.

Abstract: The present invention provides a substrate supporting apparatus having a spin chuck and a plurality of locating pins. The spin chuck configured to support and rotate a substrate has a supporting surface. The locating pins are disposed at the periphery of the supporting surface for limiting the substrate horizontal displacement. The supporting surface defines a first annular region. The first annular region is divided into a plurality of pin regions and a plurality of non-pin regions. The pin regions and the non-pin regions are arranged alternatively in a circumferential direction of the first annular region. Each of the pin regions is corresponding to one locating pin. A plurality of Bernoulli holes are set in the first annular region and is configured as an uneven structure in the first annular region so as to supply stronger gas flow in the pin regions than in the non-pin regions.

Abstract: A liquid-cooled cooling structure includes a cooling main body having a condensation chamber and an evaporation chamber arranged vertically therein; a separation member arranged between and separating the condensation chamber and the evaporation chamber, and having a first through hole and a second through hole communicating with the condensation chamber and the evaporation chamber, a dimension of the first through hole being greater than that of the second through hole; a longitudinal partition board received in the condensation chamber and arranged between the first through hole and the second through hole and separating the condensation chamber into a first channel and a second channel; cooling fins extended from an outer perimeter of the cooling main body.

Abstract: A non-invasive time domain reflection probe calibration method includes: using different volume ratio of ethanol and deionized water mixed solution to calculate a test target's medium weight coefficient and waveguide length of the non-invasive time domain reflection probes; using different concentrations of NaCl solutions to calibrate a waveguide geometric dimensioning of the non-invasive time domain reflection probes; preparing compacted soil samples with known different moisture contents and densities, and calibrating a correlation parameter of compacted soil samples' dielectric constant and conductivity with moisture content and density. The method not only determines the sensitivity of the test target medium of the non-invasive time domain reflection probes, but also obtains the waveguide length and geometric dimensioning of the probe, and realizes an accurate test of moisture content and density of the soil.

Abstract: A hinge device includes a pivot seat, a rotating shaft, a first friction block, and a locking assembly. By being structurally provided with a sleeve, a first cam ring, a first elastic ring, a second friction block, a second cam ring, a second elastic ring, an elastic element, a locking portion, and a cover of the locking assembly, the hinge device has a locking function and a long service life.

Abstract: This application provides a communication method and apparatus. In the method, each URSP rule included in a URSP corresponds to an HPLMN or a VPLMN of a UE. When the UE accesses an application, based on existing URSP rule matching, the UE uses PLMN information in the URSP rule as one of criteria for the UE to match a URSP rule.

Abstract: The present disclosure discloses a high-safety ternary positive electrode material and a method for preparing the same; wherein the ternary positive electrode material has a chemical composition of Lia(NixCoyMn1-x-y)1-bMbO2-cAc, wherein 0.75?a?1.2, 0.75?x<1, 0<y?0.15, 1?x?y>0, 0?b?0.01, 0?c?0.2, M is one or more selected from the group consisting of Al, Zr, Ti, Y, Sr, W and Mg, and A is one or more selected from the group consisting of S, F and N; and CMn?(1?x?y)?0.07; CCo?y?0.05; 0?[CMn?(1?x?y)]/(CCo?y)?2.0. The ternary positive electrode material of the present disclosure is a high-nickel single crystal material with gradient concentration; it has the advantages of high capacity and high thermal stability, and the preparation method is simple, and is suitable for large-scale production.