Abstract: A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.

Abstract: A method and a system that include providing a localized dispensing apparatus. A substrate having a material disposed on its top surface is oriented above the localized dispensing apparatus. A chemical is then dispensed from the localized dispensing apparatus onto the top surface of the oriented substrate. The chemical removes the material. The path for the material removal may be determined and the localized dispensing apparatus programmed to provide chemical according to the path.

Abstract: A device comprises a top package mounted on a bottom package, wherein the bottom package comprises a plurality of interconnection components and the bottom package comprises a plurality of first bumps formed on a first side of the bottom package, a semiconductor die is bonded on a second side of the bottom package, wherein the semiconductor die is electrically coupled to the first bumps through the interconnection components and the semiconductor die is located between the top package and the bottom package, and an underfill layer formed between the top package and the bottom package.

Abstract: A display device includes a first substrate, a second substrate, a plurality of pixel units, a driving unit, and column insulation structure. The first substrate has a display area and a non-display area outside of the display area. The pixel units are formed at the display area of the first substrate and configured to receive an output signal. Formed at the non-display area of the first substrate, the driving unit includes first and second conductive layers, and first and second insulation layers which are alternately arranged. The connecting layer is connected between the first and second conductive layers via the through-holes formed at the first and second insulation layers. The column insulation structure corresponds to the connecting layer and is formed between the first and second substrates.

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device is formed on a substrate and includes a first first-type metal-oxide-semiconductor field effect transistor (MOSFET) and a second first-type MOSFET. The first first-type MOSFET includes a first gate structure, a first source area and a first drain area on the substrate. The second first-type MOSFET includes a second gate structure, a second source area, and a second drain area on the substrate. A first pocket implant process is applied to the first first-type MOSFET via a first photomask, while a second pocket implant process is applied to the second first-type MOSFET via a second photomask. The first and second gate structures are facing different directions.

Abstract: Embodiments of mechanisms for flattening a packaged structure are provided. The mechanisms involve a flattening apparatus and the utilization of protection layer(s) between the packaged structure and the surface(s) of the flattening apparatus. The protection layer(s) is made of a soft and non-sticking material to allow protecting exposed fragile elements of the packaged structure and easy separation after processing. The embodiments of flattening process involve flattening the warped packaged structure by pressure under elevated processing temperature. Processing under elevated temperature allows the package structure to be flattened within a reasonable processing time.

Abstract: A device comprises a first package component, and a first metal trace and a second metal trace on a top surface of the first package component. The device further includes a dielectric mask layer covering the top surface of the first package component, the first metal trace and the second metal trace, wherein the dielectric mask layer has an opening therein exposing the first metal trace. The device also includes a second package component and an interconnect formed on the second package component, the interconnect having a metal bump and a solder bump formed on the metal bump, wherein the solder bump contacts the first metal trace in the opening of the dielectric mask layer.

Abstract: A package on package structure providing mechanical strength and warpage control includes a first package component, a second package component, and a first set of conductive elements coupling the first package component to the second package component. A first polymer-comprising material is molded on the first package component and surrounds the first set of conductive elements. The first polymer-comprising material has an opening therein exposing a top surface of the second package component. A third package component and a second set of conductive elements couples the second package component to the third package component.

Abstract: A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.

Abstract: A semiconductor structure includes a chip, a plurality of metal posts disposed in the chip and a buffer layer disposed on the chip. The chip includes a silicon-based layer having opposite first and second surfaces, and a build-up structure formed on the first surface of the silicon-based layer consisting of at least a metal layer and a low-k dielectric layer alternatively stacked on one another. Each of the metal posts is disposed in the silicon-based layer with one end thereof electrically connected with the metal layer while the other end is exposed from the second surface of the silicon-based layer. The buffer layer is disposed on the build-up structure. By positioning the low-k dielectric layer far from the second surface that is used for connecting to an external electronic component, the present invention reduces the overall thermal stress.

Abstract: The mechanisms of using an interposer frame to package a semiconductor die enables fan-out structures and reduces form factor for the packaged semiconductor die. The mechanisms involve using a molding compound to attach the semiconductor die to the interposer frame and forming a redistribution layer on one or both sides of the semiconductor die. The redistribution layer(s) in the package enables fan-out connections and formation of external connection structures. Conductive columns in the interposer frame assist in thermal management.

Abstract: A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level.

Abstract: Nowadays, electronic product designs are aimed at saving, due to the trend to reduce energy consumption and carbon output. Ethernet technology has also been aimed specifically at saving energy; IEEE P802.3az standard (Energy Efficient Ethernet, EEE), for Ethernet released by Broadcom is one example. The disclosure turns off the phase-locked loop when the network communication stops, effectively saving the energy consumption of the network chip under the EEE standard. In the case of network reconnection, the disclosure turns on the phase-locked loop to start the network communication through adjusting the current of current source and the parameters of a low pass filter to increase the charging speed for the reference voltage generation of the low pass filter. The disclosure then shortens the start-up time to quickly output the standard output frequency and phase of the phase-locked loop.

Abstract: Embodiments of mechanisms for flattening a packaged structure are provided. The mechanisms involve a flattening apparatus and the utilization of protection layer(s) between the packaged structure and the surface(s) of the flattening apparatus. The protection layer(s) is made of a soft and non-sticking material to allow protecting exposed fragile elements of the packaged structure and easy separation after processing. The embodiments of flattening process involve flattening the warped packaged structure by pressure under elevated processing temperature. Processing under elevated temperature allows the package structure to be flattened within a reasonable processing time.

Abstract: A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.

Abstract: Nowadays, electronic product designs are aimed at saving, due to the trend to reduce energy consumption and carbon output. Ethernet technology has also been aimed specifically at saving energy; IEEE P802.3az standard (Energy Efficient Ethernet, EEE), for Ethernet released by Broadcom is one example. The disclosure turns off the phase-locked loop when the network communication stops, effectively saving the energy consumption of the network chip under the EEE standard. In the case of network reconnection, the disclosure turns on the phase-locked loop to start the network communication through adjusting the current of current source and the parameters of a low pass filter to increase the charging speed for the reference voltage generation of the low pass filter. The disclosure then shortens the start-up time to quickly output the standard output frequency and phase of the phase-locked loop.

Abstract: A semiconductor structure includes a chip, a plurality of metal posts disposed in the chip and a buffer layer disposed on the chip. The chip includes a silicon-based layer having opposite first and second surfaces, and a build-up structure formed on the first surface of the silicon-based layer consisting of at least a metal layer and a low-k dielectric layer alternatively stacked on one another. Each of the metal posts is disposed in the silicon-based layer with one end thereof electrically connected with the metal layer while the other end is exposed from the second surface of the silicon-based layer. The buffer layer is disposed on the build-up structure. By positioning the low-k dielectric layer far from the second surface that is used for connecting to an external electronic component, the present invention reduces the overall thermal stress.

Abstract: A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.

Abstract: A method for fabricating a semiconductor package includes the steps of: providing an alignment board having a plurality of openings and a plurality of alignment marks corresponding to the openings, respectively; disposing a plurality of chips on the alignment board at positions corresponding to the openings according to the alignment marks; pressing the alignment board with a carrier board having a soft layer disposed on one surface thereof so as to embed the chips in the soft layer of the carrier board; and removing the alignment board. As such, the positions of the chips are accurately positioned according to the alignment marks on the alignment board.

Abstract: A door assembly for a vehicle includes an outer panel. A support panel is operatively connected to the outer panel and configured such that the support panel provides bending resistance to the outer panel when the outer panel is deflected toward the support panel during a first deflection distance of the outer panel. A cable is operatively connected in the door assembly between a first end and a second end of the outer panel such that the cable provides additional bending resistance to the outer panel when the outer panel is deflected toward the support panel during a second deflection distance of the outer panel, greater than the first deflection distance.