Abstract: A head mounted display device is provided. The head mounted display device includes a left eye display unit which displays an image for a left eye and is disposed along a trajectory of a left eye ellipse having a first eccentricity, and a left eye lens which faces the left eye display unit and refracts the image for the left eye in a direction of a user's left eye.

Abstract: A sense amplifier includes a first sense amplification circuit electrically connected between a bit line, to which a multi-bit memory cell is also connected, and a complementary bit line. The first sense amplification circuit is configured to sense a least significant bit (LSB) of 2-bit data in the memory cell and latch the LSB in a first sensing bit line pair. A second sense amplification circuit is provided, which is configured to sense a most significant bit (MSB) of the 2-bit data and latch the MSB in a second sensing bit line pair. A switching circuit is provided, which is configured to selectively connect between bit lines of the first sensing bit line pair and bit lines of the second sensing bit line pair.

Abstract: A method for detecting biomaterial by means of a dye having a linear upconversion fluorescent property is provided. The method includes the steps of: i) preparing a fluorophore having a linear upconversion fluorescent property; ii) reacting the fluorophore and biomaterial to obtain a reaction complex thereof; iii) exciting the reaction complex by means of a light source having a longer wavelength than the maximum light-emitting wavelength of the fluorophore; and iv) detecting and measuring the light-emitting signal having a shorter wavelength than the wavelength of the excited light emitted from the excited reaction complex. A system and a kit for detecting biomaterial using a dye having a linear upconversion fluorescent property are also provided.

Abstract: Tandem solar cells comprising two or more solar cells connected in a solar cell stack via pn diode tunnel junctions and methods for fabricating the tandem solar cells using epitaxial lift off and transfer printing are provided. The tandem solar cells have improved tunnel junction structures comprising a current tunneling layer integrated between the p and n layers of the pn diode tunnel junction that connects the solar cells.

Abstract: Memory devices are provided. A memory device includes a voltage generation circuit that includes an offset compensator configured to receive a reference voltage and an offset code and to link the offset code to the reference voltage. The voltage generation circuit includes a comparator configured to compare the reference voltage linked to the offset code with a bit line pre-charge voltage and to output driving control signals. The voltage generation circuit includes a driver configured to output the bit line pre-charge voltage at a target level of the reference voltage in response to the driving control signals. The voltage generation circuit includes a background calibration circuit configured to generate the offset code for performing control so that a target short current flows through an output node of the driver from which the bit line pre-charge voltage is output. Related methods of generating a bit line pre-charge voltage are also provided.

Abstract: A semiconductor memory device includes a memory cell array, an error correction code (ECC) engine, an input/output (I/O) gating circuit, and a control logic circuit. The memory cell array includes a plurality of bank arrays, and each of the bank arrays includes dynamic memory cells. The control logic circuit generates a first control signal to control the I/O gating circuit and a second control signal to control the ECC engine, in response to an access address and a command. The control logic circuit controls the ECC engine to perform s-bit ECC encoding on a write data to be stored in a first page of at least one bank array, in response to a first command, and controls the ECC engine to perform t-bit ECC decoding on a first codeword read from the first page, in response to a second command.

Abstract: A sense amplifier includes a first sense amplification circuit electrically connected between a bit line, to which a multi-bit memory cell is also connected, and a complementary bit line. The first sense amplification circuit is configured to sense a least significant bit (LSB) of 2-bit data in the memory cell and latch the LSB in a first sensing bit line pair. A second sense amplification circuit is provided, which is configured to sense a most significant bit (MSB) of the 2-bit data and latch the MSB in a second sensing bit line pair. A switching circuit is provided, which is configured to selectively connect between bit lines of the first sensing bit line pair and bit lines of the second sensing bit line pair.

Abstract: The present invention relates to an air conditioner for a vehicle, which can send air-conditioned air toward a rear seat of the vehicle in order to perform air-conditioning of a front seat of the vehicle and air-conditioning of a rear seat. The air conditioner includes an air passageway formed in an air-conditioning case, wherein the air passageway includes: a rear seat cold air passageway which is a passageway that the air passed through the heat exchanger for cooling bypasses the heat exchanger for heating and flows toward a rear seat of the vehicle; and a warm air passageway which is a passageway that the air passed through the heat exchanger for cooling passes through the heat exchanger for heating and flows toward a front seat or the rear seat of the vehicle.

Abstract: A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

Abstract: Provided are a plasma generating apparatus and a substrate treating apparatus. The plasma generating apparatus includes a plurality of ground electrodes arranged inside a vacuum container and extending parallel to each other and power electrodes arranged between the ground electrodes. An area where a distance between the ground electrode and the power electrode is constant exists, and the power electrodes are tapered in a direction facing the substrate. The power electrodes are connected to an RF power source, and height of the power electrode is greater than that of the ground electrode in the direction facing the substrate.

Abstract: There are provided a sense amplifier for sensing a multilevel cell and a memory device including the same. The sense amplifier is configured to sense the most significant bit (MSB) and the least significant bit (LSB) of 2-bit data a cell voltage stored in a memory cell as the most significant bit (MSB) and the least significant bit (LSB) of 2-bit data. The sense amplifier senses the MSB of the 2-bit data in a state in which a bit line is electrically disconnected from a holding bit line of the sense amplifier and senses the LSB of the 2-bit data in a state in which the cell bit line is electrically connected to the holding bit line. The sense amplifier is configured to equalize a pair of bit lines of the sense amplifier before sensing the MSB and the LSB of the 2-bit data. The sense amplifier is configured to restore to the memory cell the cell voltage corresponding to the sensed MSB and LSB of the 2-bit data.

Abstract: A semiconductor memory device includes a memory cell array, an error correction code (ECC) engine, an input/output (I/O) gating circuit, and a control logic circuit. The memory cell array includes a plurality of bank arrays, and each of the bank arrays includes dynamic memory cells. The control logic circuit generates a first control signal to control the I/O gating circuit and a second control signal to control the ECC engine, in response to an access address and a command. The control logic circuit controls the ECC engine to perform s-bit ECC encoding on a write data to be stored in a first page of at least one bank array, in response to a first command, and controls the ECC engine to perform t-bit ECC decoding on a first codeword read from the first page, in response to a second command.

Abstract: A battery module having a cooling structure with a minimized size while providing high cooling efficiency is provided. The battery module includes a front plate and a rear plate that are arranged at a front side and a rear side of a battery pack in which a plurality of battery cells is stacked and a heat-dissipating member that is arranged under the battery pack and absorbs heat generated by the battery pack. Additionally, side plates are arranged at lateral ends of the front plate and the rear plate, arranged to be in contact with respective lateral ends of the heat-dissipating member, and include a cooling channel through which a coolant circulates to cool the battery pack.

Abstract: A portable communication device is provided. The portable communication device includes a battery, a printed circuit board including one or more circuit devices driven using power from the battery, and a bracket including a first area for receiving the battery and a second area for receiving the printed circuit board, wherein a slit is formed in at least a portion of a boundary area of the first area and the second area to reduce heat spread. According to an embodiment of the present disclosure, in an electronic device, a heat-radiating structure is provided between a PCB and a bracket where a battery is seated, rerouting the path along which heat radiation from some circuit devices on the PCB flow to the battery to suppress a rise in temperature in the battery.

Abstract: Superlattice structures composed of single-crystal semiconductor wells and amorphous barriers are provided. Also provided are methods for fabricating the superlattice structures and electronic, optoelectronic, and photonic devices that include the superlattice structures. The superlattice structures include alternating quantum barrier layers and quantum well layers, the quantum barrier layers comprising an amorphous inorganic material and the quantum well layers comprising a single-crystalline semiconductor.

Abstract: Memory devices are provided. A memory device includes a voltage generation circuit that includes an offset compensator configured to receive a reference voltage and an offset code and to link the offset code to the reference voltage. The voltage generation circuit includes a comparator configured to compare the reference voltage linked to the offset code with a bit line pre-charge voltage and to output driving control signals. The voltage generation circuit includes a driver configured to output the bit line pre-charge voltage at a target level of the reference voltage in response to the driving control signals. The voltage generation circuit includes a background calibration circuit configured to generate the offset code for performing control so that a target short current flows through an output node of the driver from which the bit line pre-charge voltage is output. Related methods of generating a bit line pre-charge voltage are also provided.

Abstract: A battery charging system including a battery is provided. The battery includes a plurality of battery cells that are stacked and a pressure sensor that is configured to detect a pressure caused by swelling of the battery cells. A charger supplies charging power to the battery and a controller determines whether to supply the charging power from the charger and whether the battery is overcharged based on a change in the pressure per hour, detected by the pressure sensor, when the charger supplies the charging power to the battery.

Abstract: Disclosed herein is an air conditioner for a vehicle, which can prevent reduction of an air volume by reducing a back-and-forth width of the vehicle and sufficiently securing the degree of opening of a warm air bypass door, and control an efficient linkage between the warm air bypass door and a defrost door. The air conditioner includes: an air-conditioning case having an air passageway formed therein; a heat exchanger for cooling and a heat exchanger for heating which are disposed in the air passageway of the air-conditioning case to exchange heat with air passing the air passageway; a warm air bypass passageway for directly discharging the air passing the heat exchanger for heating to a front seat floor vent; and a warm air bypass door for adjusting the degree of opening of the warm air bypass passageway, wherein the warm air bypass door includes a rotary shaft and a plate, and the plate has a bent portion to have at least two sides.

Abstract: Disclosed herein is an air conditioner for a vehicle, which can perform a bleeding function to discharge air to a rear seat floor vent in a rear seat vent mode, and optimize the size of an outlet and the shape of doors to adjust a bleeding amount of a rear seat floor.