Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.

Abstract: An interconnect structure on a semiconductor die includes: a lower conductive layer; an upper conductive layer disposed above the lower conductive layer; and a VIA disposed between the lower conductive layer and the upper conductive layer. The VIA includes: a primary interconnect structure and a sacrificial stress barrier ring disposed around the primary interconnect structure and separated a distance from the primary interconnect structure. A fabrication method for the interconnect structure includes: forming a dielectric layer over a lower conductive layer; patterning photoresist (PR) layer over the dielectric layer to define a location for a plurality of VIA trenches, wherein the patterning includes patterning the PR layer to provide a center opening for the VIA trenches that is surrounded by a ring opening for the VIA trenches, wherein the center opening and the ring opening are spaced apart.

Abstract: Composite dielectric structures for semiconductor die assemblies, and associated systems and methods are disclosed. In some embodiments, the composite dielectric structure includes a flexible dielectric layer configured to conform to irregularities (e.g., particles, defects) at a bonding interface of directly bonded semiconductor dies (or wafers). The flexible dielectric layer may include a polymer material configured to deform in response to localized pressure generated by the irregularities during bonding process steps. The composite dielectric structure includes additional dielectric layers sandwiching the flexible dielectric layer such that the composite dielectric structure can provide robust bonding strength to other dielectric layers through the additional dielectric layers. In some embodiments, a chemical vapor deposition process may be used to form the composite dielectric structure utilizing siloxane derivatives as a precursor.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: A resin composition includes resin and inorganic filler. The resin includes liquid rubber resin, polyphenylene ether resin, and a crosslinking agent. Compared to a total of 100 parts by mass of the resin, the usage amount of the inorganic filler is at least greater than or equal to 40 parts by mass.

Abstract: A trimming method is provided. The trimming method includes the following steps. A first wafer including a substrate and a device layer over a first side of the substrate is provided. The first wafer is bonded to a second wafer with the first side of the substrate facing toward the second wafer. An edge trimming process is performed to remove a trimmed portion of the substrate from a second side opposite to the first side vertically downward toward the first side in a first direction along a perimeter of the substrate, wherein the edge trimming process results in the substrate having a flange pattern laterally protruding from the device layer and laterally surrounding an untrimmed portion of the substrate along a second direction perpendicular to the first direction.

Abstract: A vacuum apparatus includes process chambers, and a transfer chamber coupled to the process chambers. The transfer chamber includes one or more vacuum ports, thorough which a gas inside the transfer chamber is exhausted, and vent ports, from which a vent gas is supplied. The one or more vacuum ports and the vent ports are arranged such that air flows from at least one of the vent ports to the one or more vacuum ports are line-symmetric with respect to a center line of the transfer chamber.

Abstract: A powder composition includes a first powder, a second powder, and a modified functional group. A particle size range of the first powder is between 1 micron and 100 microns. The second powder and the modified functional group are modified on the first powder. A particle size range of the second powder is between 10 nanometers and 1 micron. A manufacturing method of a powder composition is also provided.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: The present disclosure is directed to a semiconductor device. The semiconductor device includes a substrate, an insulating layer disposed on the substrate, a first conductive feature disposed in the insulating layer, and a capacitor structure disposed on the insulating layer. The capacitor structure includes a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked. The semiconductor device also includes a first via connected to the first electrode and the third electrode, a second via connected to the second electrode, and a third via connected to the first conductive feature. A part of the first via is disposed in the insulating layer. A portion of the first conductive feature is directly under the capacitor structure.

Abstract: A rubber resin material with high dielectric constant and a metal substrate with high dielectric constant are provided. The rubber resin material with high dielectric constant includes a rubber resin composition with high dielectric constant and inorganic fillers. The rubber resin composition with high dielectric constant includes: 40 wt % to 70 wt % of a liquid rubber, 10 wt % to 30 wt % of a polyphenylene ether resin, and 20 wt % to 40 wt % of a crosslinker. A molecular weight of the liquid rubber ranges from 800 g/mol to 6000 g/mol. A dielectric constant of the rubber resin material with high dielectric constant is higher than or equal to 2.0.

Abstract: An optical element driving mechanism is provided, including a movable part, a fixed part, a driving assembly, and a circuit assembly. The movable part is connected to an optical element. The movable part is movable relative to the fixed part. The driving assembly drives the movable part to move relative to the fixed part. The circuit assembly is electrically connected to the driving assembly.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable part, a fixed part, and a driving assembly. The movable part connects an optical element. The movable part moves relative to the fixed part. The driving assembly drives the movable part to move relative to the fixed part. The driving assembly includes a first magnetic element and a coil.

Abstract: An optical element driving mechanism is provided, including a movable part, a fixed part, and a driving assembly. The movable part is connected to an optical element. The movable part is movable relative to the fixed part. The driving assembly drives the movable part to move relative to the fixed par. The fixed part includes an outer frame and a base.

Abstract: Fluid pressure flowing through first main line in pressure compensator using first pressure sensor is measured. Fluid flows along first main line through pressure compensator to semiconductor device processing apparatus, through apparatus, then through compensator via second main line. First pressure sensor is attached to first pressure sensor line branching off first main line. Fluid pressure flowing through second main line is measured using second pressure sensor. Second pressure sensor is attached to second pressure sensor line branching off second main line. Pressure difference between fluid flowing through first and second main lines is determined. Fluid flow rate is adjusted when difference is greater than threshold amount. A first tank is attached to one of first or second main lines via a conduit, and second tank is attached to first or second pressure sensor line when first tank is attached to corresponding first or second main line via a conduit.