Abstract: A data writing method is provided. The method includes receiving a first write command and first data corresponding to the first write command from a host system, wherein the first write command instructs to store the first data into a first logical address; copying the first data into a register, responding to the host system that the first write command is completed, and starting to execute a first program operation to program the first data into a first physical page; and in response to determining that the first program operation is failed, reading the first data from the register according to a logical to physical addresses mapping table and mandatorily programming the first data into a second physical page.

Abstract: A Memory management method for a storage device having a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of physical blocks divided into a plurality of block stripes. The method includes: scanning the physical blocks to identify one or more bad physical blocks among the physical blocks; calculating a plurality of effective weight values corresponding to the block stripes according to a plurality of data accessing time parameters of the rewritable non-volatile memory module, a plurality of valid data counts, and the identified one or more bad physical blocks; and selecting a target block stripe from the block stripes according to the effective weight values to perform a garbage collection operation.

Abstract: A command processing method and a storage controller are provided. The command processing method includes performing a command merging process on commands sequentially received by a command queue. The command merging process includes an initialization step and multiple iterations. The initialization step includes transmitting the commands from the command queue to a continuity checking pool (CCP), transmitting an initial command of the commands from the CCP to a continuity list (CL) and setting a range of the CL. Each of the iterations includes transmitting the commands from the command queue to the CCP; determining whether the commands in the CCP and the range of the CL conform to a continuity condition; and when the commands in the CCP and the range conform to the continuity condition, appending the first command to the CL and resetting the range of the CL according to the first command.

Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.

Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.

Abstract: A memory management method is provided. The method includes performing a garbage collection command; generating a garbage collection information table having a predetermined size according to one or more recycled block stripes, and writing the garbage collection information table into a target block stripe, wherein the garbage collection information table includes an identification tag, a local recycled block stripe list and first padding data; reading valid data in the one or more recycled block stripes, and writing the valid data into the target block stripe, wherein the written valid data is behind and immediately adjacent to the garbage collection information table being written to; and closing the target block stripe, and adding the local recycled block stripe list into a global recycled block stripe list in a buffer memory, so as to complete the garbage collection command.

Abstract: A memory management method is provided. The method includes in response to completion of a garbage collection operation, identifying one or more recycled block stripes subjected to the garbage collection operation among a plurality of block stripes of a rewritable non-volatile memory module; updating a garbage collection information table in a buffer memory according to the one or more recycled block stripes; and writing the garbage collection information table into the rewritable non-volatile memory module.

Abstract: A data management method and a storage controller are provided. The method includes: receiving write sectors corresponding to a write command and transmitting the write sectors to a partial block buffer or a full block buffer; when the write sectors corresponding to a first block are transmitted to the partial block buffer, starting a timer corresponding to the first block; when the partial block buffer receives first write sectors corresponding to the first block and the first write sectors and the write sectors corresponding to the first block in the partial block buffer form a full first block, the first block is transmitted to the full block buffer before or when the timer is expired; and when the timer is expired and the full first block is not yet formed in the partial block buffer, performing a read-modify-write operation according to the write sectors corresponding to the first block.

Abstract: A memory management method is provided. The method includes storing an acquired first command into a command queue, wherein in response to determining that the first command is a flush command, a flush phase value of the flush command and a corresponding second command is set according to a current flush phase, a command phase count value corresponding to the current flush phase is calculated, and the current flush phase is adjusted; selecting a new target command from the command queue, and executing the target command according to a target flush phase value of the target command and a corresponding target flush phase count value, wherein the target flush phase count value not being a preset value is adjusted; determining, according to the adjusted target flush phase count value, whether to respond to a host system that an execution of a target flush command corresponding to the target flush phase value is completed.

Abstract: A data management method and a storage controller are provided. The method includes: receiving write sectors corresponding to a write command and transmitting the write sectors to a partial block buffer or a full block buffer; when the write sectors corresponding to a first block are transmitted to the partial block buffer, starting a timer corresponding to the first block; when the partial block buffer receives first write sectors corresponding to the first block and the first write sectors and the write sectors corresponding to the first block in the partial block buffer form a full first block, the first block is transmitted to the full block buffer before or when the timer is expired; and when the timer is expired and the full first block is not yet formed in the partial block buffer, performing a read-modify-write operation according to the write sectors corresponding to the first block.

Abstract: Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark, each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings.

Abstract: A command processing method and a storage controller are provided. The command processing method includes performing a command merging process on commands sequentially received by a command queue. The command merging process includes an initialization step and multiple iterations. The initialization step includes transmitting the commands from the command queue to a continuity checking pool (CCP), transmitting an initial command of the commands from the CCP to a continuity list (CL) and setting a range of the CL. Each of the iterations includes transmitting the commands from the command queue to the CCP; determining whether the commands in the CCP and the range of the CL conform to a continuity condition; and when the commands in the CCP and the range conform to the continuity condition, appending the first command to the CL and resetting the range of the CL according to the first command.

Abstract: A memory management method is provided. The method includes storing an acquired first command into a command queue, wherein in response to determining that the first command is a flush command, a flush phase value of the flush command and a corresponding second command is set according to a current flush phase, a command phase count value corresponding to the current flush phase is calculated, and the current flush phase is adjusted; selecting a new target command from the command queue, and executing the target command according to a target flush phase value of the target command and a corresponding target flush phase count value, wherein the target flush phase count value not being a preset value is adjusted; determining, according to the adjusted target flush phase count value, whether to respond to a host system that an execution of a target flush command corresponding to the target flush phase value is completed.

Abstract: A memory management method is provided. The method includes storing an acquired first command into a command queue, and setting a command phase value of the first command according to a current command phase, wherein in response to determining that the first command is a flush command, calculating a command phase count value corresponding to the current command phase, and adjusting the current command phase; selecting a new target command from the command queue, and executing the target command according to a target command phase value of the target command and a corresponding target command phase count value, wherein the target command phase count value which is not a preset value is adjusted; deteiiiiining, according to the adjusted target command phase count value, whether to respond to a host system that an execution of a target flush command corresponding to the target command phase value is completed.

Abstract: A memory management method is provided. The method includes storing an acquired first command into a command queue, and setting a command phase value of the first command according to a current command phase, wherein in response to determining that the first command is a flush command, calculating a command phase count value corresponding to the current command phase, and adjusting the current command phase; selecting a new target command from the command queue, and executing the target command according to a target command phase value of the target command and a corresponding target command phase count value, wherein the target command phase count value which is not a preset value is adjusted; determining, according to the adjusted target command phase count value, whether to respond to a host system that an execution of a target flush command corresponding to the target command phase value is completed.

Abstract: A memory management method is provided. The method includes performing a garbage collection command; generating a garbage collection information table having a predetermined size according to one or more recycled block stripes, and writing the garbage collection information table into a target block stripe, wherein the garbage collection information table includes an identification tag, a local recycled block stripe list and first padding data; reading valid data in the one or more recycled block stripes, and writing the valid data into the target block stripe, wherein the written valid data is behind and immediately adjacent to the garbage collection information table being written to; and closing the target block stripe, and adding the local recycled block stripe list into a global recycled block stripe list in a buffer memory, so as to complete the garbage collection command.

Abstract: A memory management method is provided. The method includes in response to completion of a garbage collection operation, identifying one or more recycled block stripes subjected to the garbage collection operation among a plurality of block stripes of a rewritable non-volatile memory module; updating a garbage collection information table in a buffer memory according to the one or more recycled block stripes; and writing the garbage collection information table into the rewritable non-volatile memory module.

Abstract: A data writing method is provided. The method includes receiving a first write command and first data corresponding to the first write command from a host system, wherein the first write command instructs to store the first data into a first logical address; copying the first data into a register, responding to the host system that the first write command is completed, and starting to execute a first program operation to program the first data into a first physical page; and in response to determining that the first program operation is failed, reading the first data from the register according to a logical to physical addresses mapping table and mandatorily programming the first data into a second physical page.

Abstract: A data backup method, a data recovery method and a storage controller for a rewritable non-volatile memory module are provided. The data backup method includes receiving a trim command; generating a trim information list according to the trim command and a physical address that stores the trim information list, wherein the trim information list records information corresponding to the trim command and the physical address; storing the generated trim information list into the physical address. The data recovery method includes re-establishing a logical-to-physical table; loading a latest trim information list into a memory from the rewritable non-volatile memory module; updating the re-established logical-to-physical table or the trim information list in the memory according to the trim information.

Abstract: A Memory management method for a storage device having a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of physical blocks divided into a plurality of block stripes. The method includes: scanning the physical blocks to identify one or more bad physical blocks among the physical blocks; calculating a plurality of effective weight values corresponding to the block stripes according to a plurality of data accessing time parameters of the rewritable non-volatile memory module, a plurality of valid data counts, and the identified one or more bad physical blocks; and selecting a target block stripe from the block stripes according to the effective weight values to perform a garbage collection operation.