Abstract: A memory management method for a storage device having a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of physical blocks. The method includes: scanning the plurality of physical blocks to identify one or more bad physical blocks; performing a bad physical block remapping operation on the one or more bad physical blocks to update a virtual block stripe management table; and performing a writing operation under a multiple plane write mode based on the virtual block stripe management table.

Abstract: A data backup method and a data recovery method are provided. The data backup method includes: updating a main information table and a sub information table and generating physical unit information according to an erase count and a physical unit status of a physical unit; writing the physical unit information into the physical unit before writing data into the empty physical unit; writing the main information table and the sub information table into a rewritable non-volatile memory module according to corresponding conditions. The data recovery method includes: writing a latest main information table stored in a rewritable non-volatile memory module into a memory; updating the main information table in the memory according to a sub information table which is newer than the main information table; and updating the main information table in the memory according to physical unit information which is newer than the sub information table.

Abstract: A command processing method and a storage controller using the same are provided. The command processing method includes: receiving a plurality of I/O commands; categorizing the I/O commands into a plurality of groups according to a processor effort index of the I/O commands; selecting a first group from the groups, resetting a timer and obtaining an expiration time corresponding to the first group according to the I/O commands of the first group, and executing the I/O commands of the first group; and selecting a second group from the groups and resetting the timer when the expiration time of the first group expires, wherein when the processor effort index of the first group is less than a threshold, a clock frequency of the processor is lowered before the expiration time expires.

Abstract: A data moving method and a storage controller are provided. The method includes: when obtained valid data is sequential data, transmitting a first read command to read a first data and a second data from a first plane and a second plane of a first die, transmitting a second read command to read a third data and a fourth data from a first plane and a second plane of a second die, and transmitting the first data, the third data, the second data and the fourth data to a buffer memory in an order; and transmitting a first programming command to program the first data and the second data to a first plane and a second plane of a third die, and transmitting a second programming command to program the third data and the fourth data to a first plane and a second plane of a fourth die.

Abstract: A valid data management method and a storage controller are provided. The method includes creating a valid data mark table and a valid logical addresses table corresponding to a target physical unit according to a logical-to-physical table and a target physical-to-logical table corresponding to the target physical unit, wherein the valid data mark table records a plurality of mark values respectively corresponding to a plurality of target logical addresses, the mark values respectively indicate whether the corresponding logical addresses is valid or invalid, and the valid logical addresses table only records one or more valid target logical addresses according to an order of one or more first bit values in the valid data mark table; and identifying one or more valid data of the target physical unit according to the logical-to-physical table, the valid data mark table and the valid logical addresses table corresponding to the target physical unit.

Abstract: A command processing method and a storage controller using the same are provided. The command processing method includes: receiving a plurality of I/O commands; categorizing the I/O commands into a plurality of groups according to a processor effort index of the I/O commands; selecting a first group from the groups, resetting a timer and obtaining an expiration time corresponding to the first group according to the I/O commands of the first group, and executing the I/O commands of the first group; and selecting a second group from the groups and resetting the timer when the expiration time of the first group expires, wherein when the processor effort index of the first group is less than a threshold, a clock frequency of the processor is lowered before the expiration time expires.

Abstract: A valid data management method and a storage controller are provided. The method includes creating a valid data mark table and a valid logical addresses table corresponding to a target physical unit according to a logical-to-physical table and a target physical-to-logical table corresponding to the target physical unit, wherein the valid data mark table records a plurality of mark values respectively corresponding to a plurality of target logical addresses, the mark values respectively indicate whether the corresponding logical addresses is valid or invalid, and the valid logical addresses table only records one or more valid target logical addresses according to an order of one or more first bit values in the valid data mark table; and identifying one or more valid data of the target physical unit according to the logical-to-physical table, the valid data mark table and the valid logical addresses table corresponding to the target physical unit.

Abstract: A data backup method, a data recovery method and a storage controller for a rewritable non-volatile memory module are provided. The data backup method includes receiving a trim command; generating a trim information list according to the trim command and a physical address that stores the trim information list, wherein the trim information list records information corresponding to the trim command and the physical address; storing the generated trim information list into the physical address. The data recovery method includes re-establishing a logical-to-physical table; loading a latest trim information list into a memory from the rewritable non-volatile memory module; updating the re-established logical-to-physical table or the trim information list in the memory according to the trim information.

Abstract: A data backup method and a data recovery method are provided. The data backup method includes: updating a main information table and a sub information table and generating physical unit information according to an erase count and a physical unit status of a physical unit; writing the physical unit information into the physical unit before writing data into the empty physical unit; writing the main information table and the sub information table into a rewritable non-volatile memory module according to corresponding conditions. The data recovery method includes: writing a latest main information table stored in a rewritable non-volatile memory module into a memory; updating the main information table in the memory according to a sub information table which is newer than the main information table; and updating the main information table in the memory according to physical unit information which is newer than the sub information table.

Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.

Abstract: A memory management method is provided. The method includes writing a plurality of first data into a first physical block and storing a first stamp corresponding to the first physical block; writing a plurality of second data into a second physical block and storing a second stamp corresponding to the second physical block, wherein the second stamp is greater than the first stamp; moving a plurality of third data in the first data in the first physical block to a third physical block, wherein the third data are valid data and the third data match a specific type; and storing a third stamp corresponding to the third physical block and updating the second stamp corresponding to the second physical block to a fourth stamp, wherein the fourth stamp is greater than the third stamp and the third stamp is greater than or equal to the second stamp.

Abstract: A spectroscopic overlay metrology system and corresponding spectroscopic overlay metrology methods are disclosed herein for improving overly measurement accuracy, optimizing overlay recipes, and/or minimizing (or eliminating) asymmetry-induced overly error from overlay measurements. An exemplary method includes generating a diffraction spectrum by an overlay target from incident radiation having more than one wavelength. The diffraction spectrum includes a plurality of positive ordered diffracted beams and a plurality of negative ordered diffracted beams that are separated by wavelength, such that the diffraction spectrum includes more than one wavelength of a positive order and a negative order.

Abstract: A data writing method is provided. The method includes writing a first write data into a first physical sub-unit in a storage device according to a first write command; recording a first meta data corresponding to the first write data into the storage device; writing a second write data into a second physical sub-unit in the storage device; recording a second meta data corresponding to the second write data into the storage device. A second write identification code of the second meta data is set to be different from a first write identification code of the first meta data if the second physical unit is closely adjacent to the first physical unit and the second write data is written according to the second write command; and whether the second write data is valid or invalid is determined according to the second meta data if a special event occurs.

Abstract: A data writing method is provided. The method includes writing a first write data into a first physical sub-unit in a storage device according to a first write command; recording a first meta data corresponding to the first write data into the storage device; writing a second write data into a second physical sub-unit in the storage device; recording a second meta data corresponding to the second write data into the storage device. A second write identification code of the second meta data is set to be different from a first write identification code of the first meta data if the second physical unit is closely adjacent to the first physical unit and the second write data is written according to the second write command; and whether the second write data is valid or invalid is determined according to the second meta data if a special event occurs.

Abstract: A memory management method is provided. The method includes writing a plurality of first data into a first physical block and storing a first stamp corresponding to the first physical block; writing a plurality of second data into a second physical block and storing a second stamp corresponding to the second physical block, wherein the second stamp is greater than the first stamp; moving a plurality of third data in the first data in the first physical block to a third physical block, wherein the third data are valid data and the third data match a specific type; and storing a third stamp corresponding to the third physical block and updating the second stamp corresponding to the second physical block to a fourth stamp, wherein the fourth stamp is greater than the third stamp and the third stamp is greater than or equal to the second stamp.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data; detecting a total number of first type physical erasing units not storing valid data; performing a first procedure if the total number is less than a first threshold value. The first procedure includes: receiving second data from a rewritable non-volatile memory module; temporarily storing the first data and the second data; dynamically determining a writing rule according to a storage status of the rewritable non-volatile memory module and storing the first data and the second data into the rewritable non-volatile memory module according to the determined writing rule. Therefore, a writing speed of the rewritable non-volatile memory module corresponding to the first data in the first procedure becomes stable.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data; detecting a total number of first type physical erasing units not storing valid data; performing a first procedure if the total number is less than a first threshold value. The first procedure includes: receiving second data from a rewritable non-volatile memory module; temporarily storing the first data and the second data; dynamically determining a writing rule according to a storage status of the rewritable non-volatile memory module and storing the first data and the second data into the rewritable non-volatile memory module according to the determined writing rule. Therefore, a writing speed of the rewritable non-volatile memory module corresponding to the first data in the first procedure becomes stable.