Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.

Abstract: Some embodiments relate to a semiconductor structure having a magnetic tunnel junction (MTJ) on a substrate and a top electrode on the MTJ. A first segment of a top surface of the top electrode adjacent to a first sidewall of the top electrode is different from a second segment of the top surface of the top electrode adjacent to a second sidewall of the top electrode. A sidewall spacer comprises a first spacer on the first sidewall of the top electrode and a second spacer on the second sidewall of the top electrode. A first surface of the first spacer comprises a first curve and a second surface of the second spacer comprises a second curve. A dielectric layer is around the MTJ and top electrode.

Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a an inter-layer dielectric (ILD) structure laterally surrounding a conductive interconnect. A dielectric protection layer is disposed over the ILD structure and a passivation layer is disposed over the dielectric protection layer. The passivation layer includes a protrusion extending outward from an upper surface of the passivation layer. A bottom electrode continuously extends from over the passivation layer to between sidewalls of the passivation layer. A data storage element is over the bottom electrode and a top electrode is over the data storage element.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a memory device. The method includes forming a first memory cell and a second memory cell over a substrate. A first dielectric layer is formed over and around the first and second memory cells. The first dielectric layer comprises sidewalls defining an opening spaced laterally between the first and second memory cells. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer is disposed in the opening. A planarization process is performed on the first and second dielectric layers. At least a portion of the second dielectric layer is in the opening after the planarization process.

Abstract: The present disclosure relates to a method of forming an integrated chip. The method includes forming a memory device over a substrate and forming an etch stop layer over the memory device. An inter-level dielectric (ILD) layer is formed over the etch stop layer and laterally surrounding the memory device. One or more patterning process are performed to define a first trench extending from a top of the ILD layer to expose an upper surface of the etch stop layer. A removal process is performed to remove an exposed part of the etch stop layer. A conductive material is formed within the interconnect trench after performing the removal process.

Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.

Abstract: A method for fabricating an integrated circuit is provided. The method includes depositing an etch stop layer over an interconnect layer having a conductive feature; depositing a protective layer over the etch stop layer; depositing a first dielectric layer over the protective layer; etching a via opening in the first dielectric layer, wherein the protective layer has a higher etch resistance to etching the via opening than that of the first dielectric layer; etching a portion of the protective layer exposed by the via opening; etching a portion of the etch stop layer exposed by the via opening, such that the via opening exposes the conductive feature; forming a bottom electrode via in the via opening; and forming a memory stack over the bottom electrode via.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a protective sidewall spacer layer that laterally encloses a memory cell. An upper inter-level dielectric (ILD) layer overlying a substrate. The memory cell is disposed with the upper ILD layer. The memory cell includes a top electrode, a bottom electrode, and a magnetic tunnel junction (MTJ) structure disposed between the top and bottom electrodes. A sidewall spacer structure laterally surrounds the memory cell. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and the protective sidewall spacer layer. The first and second sidewall spacer layers comprise a first material and the protective sidewall spacer layer comprises a second material different from the first material. A conductive wire overlying the first memory cell. The conductive wire contacts the top electrode and the protective sidewall spacer layer.

Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a an inter-layer dielectric (ILD) structure laterally surrounding a conductive interconnect. A dielectric protection layer is disposed over the ILD structure and a passivation layer is disposed over the dielectric protection layer. The passivation layer includes a protrusion extending outward from an upper surface of the passivation layer. A bottom electrode continuously extends from over the passivation layer to between sidewalls of the passivation layer. A data storage element is over the bottom electrode and a top electrode is over the data storage element.

Abstract: An MRAM memory cell includes a substrate and a transistor. The transistor includes: first and second source regions; a drain region between the first and second source regions; a first channel region between the drain region and the first source region; a second channel region between the drain region and the second source region; a first gate structure over the first channel region; and a second gate structure over the second channel region. A magnetic tunnel junction is overlying the transistor. The drain region is coupled to the magnetic tunnel junction. A first metal layer is overlying the transistor, and a second metal layer is overlying the first metal layer. The second and first metal layers couple a common source line signal to the first and second source regions of the MRAM memory cell and to those of a neighboring MRAM memory cell.

Abstract: Some embodiments relate to an integrated circuit including a magnetoresistive random-access memory (MRAM) cell. The integrated circuit includes a semiconductor substrate and an interconnect structure disposed over the semiconductor substrate. The interconnect structure includes metal layers that are stacked over one another with dielectric layers disposed between. The metal layers include a lower metal layer and an upper metal layer disposed over the lower metal layer. A bottom electrode is disposed over and in electrical contact with the lower metal layer. A magnetic tunneling junction (MTJ) is disposed over an upper surface of bottom electrode. A top electrode is disposed over an upper surface of the MTJ. A sidewall spacer surrounds an outer periphery of the top electrode. Less than an entirety of a top electrode surface is in direct electrical contact with a metal via connected to the upper metal layer.

Abstract: A method for manufacturing a memory device is provided. The method includes forming a bottom electrode layer, a resistance switching element layer over the bottom electrode layer, and a top electrode layer over the resistance switching element layer; patterning the top electrode layer into a top electrode; forming a protection spacer on a sidewall of the top electrode; patterning the resistance switching element layer into a resistance switching element after forming the protection spacer; and patterning the bottom electrode layer into a bottom electrode after patterning the resistance switching element layer.

Abstract: A method of forming a magnetic random access memory (MRAM) device includes forming a bottom electrode layer over a substrate including an inter-metal dielectric (IMD) layer having a metal line therein; forming a barrier layer over the bottom electrode layer; forming a magnetic tunnel junction (MTJ) layer stack over the bottom electrode layer; forming a dielectric layer over the MTJ layer stack; forming an opening in the dielectric layer to expose the barrier layer; filling the opening in the dielectric layer with a top electrode; after filling the opening in the dielectric layer with the top electrode, etching the dielectric layer to expose the barrier layer; and patterning the MTJ layer stack to form an MTJ stack that exposes the bottom electrode layer.

Abstract: The present disclosure provides a system and method for forming a reduced area MRAM memory cell including a substrate, a transistor overlying the substrate and a magnetic tunnel junction overlying the transistor. The transistor includes a first and second source regions, a drain region between the first and second source regions, at least one first channel region between the drain region and the first source region, at least one second channel region between the drain region and the second source region, a first gate structure overlying the at least one first channel region, and a second gate structure overlying the at least one second channel region. First and second metal layers overlie the transistor. The first and second metal layers are configured to couple a common source line signal to the first and second source regions.

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first memory cell and a second memory cell over a substrate, wherein each of the first and second memory cells comprises a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element; depositing a first dielectric layer over the first and second memory cells, such that the first dielectric layer has a void between the first and second memory cells; depositing a second dielectric layer over the first dielectric layer; and forming a first conductive feature and a second conductive feature in the first and second dielectric layers and respectively connected with the top electrode of the first memory cell and the top electrode of the second memory cell.

Abstract: A method for fabricating the semiconductor device is provided. The method includes depositing a first dielectric layer; forming a first memory cell over the first dielectric layer; depositing a second dielectric layer over the first memory cell; and forming a second memory cell over the second dielectric layer. Forming the first memory cell includes depositing a first resistance switching layer over the first dielectric layer and performing a first physical etching process to pattern the first resistance switching layer into a first resistance switching element. Forming the second memory cell includes depositing a second resistance switching layer over the second dielectric layer and performing a chemical etching process to pattern the second resistance switching layer into a second resistance switching element.

Abstract: A memory device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack, a top electrode, and a sidewall spacer. The MTJ stack is over the bottom electrode. The top electrode is over the MTJ stack. The sidewall spacer laterally surrounds the MTJ stack and the top electrode. The sidewall spacer has an outermost sidewall laterally set back from an outermost sidewall of the bottom electrode.

Abstract: A method of forming a MRAM device includes forming an interconnect structure spanning a memory region and a peripheral region; forming a MTJ stack over the interconnect structure within the memory region; depositing a dielectric layer over the MTJ stack and spanning the memory region and the peripheral region; removing a first portion of the dielectric layer from the peripheral region, while leaving a second portion of the dielectric layer within the memory region; after removing the first portion of the dielectric layer from the peripheral region, forming a first IMD layer spanning the memory region and the peripheral region; forming a dual damascene structure through the first IMD layer to a metallization pattern of the interconnect structure within the peripheral region; and after forming the dual damascene structure within the peripheral region, forming a top electrode via in contact with a top electrode of the MTJ stack.

Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a memory cell stack over a substrate. The memory cell stack includes a top electrode. A sidewall spacer structure is formed around the memory cell stack. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. A dielectric structure is formed over the sidewall spacer structure. A first etch process is performed on the dielectric structure and the second sidewall spacer layer to define an opening above the top electrode. The second sidewall spacer layer and the dielectric structure are etched at a higher rate than the protective sidewall spacer layer during the first etch process. A top electrode via is formed within the opening.