Abstract: The present disclosure provides a method for manufacturing an energy-storage composite material. The method includes (a) providing a solution having a carbon substrate, and placing the solution in a pressure container, and a surface of the carbon substrate having an energy-storage active precursor; (b) stirring the solution having the carbon substrate at a first stirring speed, and venting air in the pressure container at a first temperature, such that a pressure in the pressure container reaches a first pressure and is maintained for a first period of time; and (c) introducing a fluid into the pressure container, stirring the solution having the carbon substrate at a second stirring speed, increasing a pressure and a temperature in the pressure container to a second pressure and a second temperature and maintaining for a second period of time, and then reducing the pressure to the atmosphere pressure to obtain an energy-storage composite material.

Abstract: The present disclosure provides a method for manufacturing an energy-storage composite material. The method includes (a) providing a solution having a carbon substrate, and placing the solution in a pressure container, and a surface of the carbon substrate having an energy-storage active precursor; (b) stirring the solution having the carbon substrate at a first stirring speed, and venting air in the pressure container at a first temperature, such that a pressure in the pressure container reaches a first pressure and is maintained for a first period of time; and (c) introducing a fluid into the pressure container, stirring the solution having the carbon substrate at a second stirring speed, increasing a pressure and a temperature in the pressure container to a second pressure and a second temperature and maintaining for a second period of time, and then reducing the pressure to the atmosphere pressure to obtain an energy-storage composite material.

Abstract: A float bath coating system includes at least one nanoparticle coater located in a float bath. The at least one nanoparticle coater includes a housing, a nanoparticle discharge slot, a first combustion slot, and a second combustion slot. The nanoparticle discharge slot is connected to a nanoparticle source and a carrier fluid source. The first combustion slot is connected to a fuel source and an oxidizer source. The second combustion slot is connected to a fuel source and an oxidizer source.

Abstract: A nanoparticle coater includes a housing; a nanoparticle discharge slot; a first combustion slot; and a second combustion slot.

Abstract: A glass article includes a glass substrate having a first surface, a second surface, and an edge. At least one nanoparticle region is located adjacent at least one of the first surface and the second surface.

Abstract: A glass drawdown coating system includes a container defining a glass ribbon path having a first side and a second side. At least one nanoparticle coater is located adjacent the first side and/or the second side of the glass ribbon path.

Abstract: Thermally produced graphenic carbon particles for use as absorptive pigments are disclosed. The pigments may be used in coatings and bulk articles to provide favorable absorbance characteristics at various wavelengths including visible and infrared regions.

Abstract: A method for recovering a baseboard management controller (BMC) by determining, by a basic input/output system (BIOS), whether a BMC recovery mode is generated by a recovery mode jumper being triggered. The system performing the method can further install, if the recovery jumper is not triggered, a BMC firmware update driver and detect, if the recovery jumper is not triggered, a BMC image. The system that performs the method can further update, if the recovery jumper is not triggered, the BMC firmware and copy to a backup image, if the recovery jumper is not triggered, the BMC firmware update.

Abstract: A semiconductor device includes a first semiconductor layer on a substrate, a second semiconductor layer containing an n-type dopant, on the first semiconductor layer, a third semiconductor layer having a resistance greater than a resistance of the second semiconductor layer, on the second semiconductor layer, a fourth semiconductor layer containing a nitride semiconductor, on the third semiconductor layer, and a fifth semiconductor layer containing a nitride semiconductor having a band gap greater than a band gap of the fourth semiconductor layer, on the fourth semiconductor layer.

Abstract: A vehicular lamp includes a housing having a chamber. The housing includes a heat dissipating portion made of metal. The housing further includes a platform integrally formed with the heat dissipating portion. The platform includes a coupling portion. A reflective cover is mounted in the chamber and includes a recessed portion in. The recessed portion has a rear end with an opening. The platform extends through the opening, and the coupling portion is received in the recessed portion. The recessed portion includes a reflective face. A light-emitting diode unit includes a plurality of light-emitting diodes fixed to the coupling portion and a circuit board fixed to the coupling portion. The light-emitting diodes emit light rays towards the reflective face of the reflective cover. A shield is mounted in front of the housing and is transmittable to the light rays.

Abstract: According to embodiments, a semiconductor device includes a first laminated nitride semiconductor layer in which first nitride semiconductor layers and second nitride semiconductor layers are alternately laminated; a third nitride semiconductor layer; a fourth nitride semiconductor layer; a drain electrode; a source electrode; and a gate electrode. The first nitride semiconductor layer is carbon-containing gallium nitride. The second nitride semiconductor layer contains aluminum indium nitride. The third nitride semiconductor layer is on the first laminated nitride semiconductor layer and includes gallium nitride. The fourth nitride semiconductor layer is on the third nitride semiconductor layer and contains aluminum gallium nitride. The drain electrode and the source electrode are on the fourth nitride semiconductor layer. The gate electrode is between the drain electrode and the source electrode.

Abstract: Dispersions of graphenic carbon particles are produced using a polymeric dispersant. The polymeric dispersant includes an anchor block comprising glycidyl (meth)acrylate, 3,4-epoxycyclohexylmethyl(meth)acrylate, 2-(3,4-epoxycyclohexyl)ethyl(meth)acrylate, allyl glycidyl ether and mixtures thereof, reacted with a carboxylic acid comprising 3-hydroxy-2-naphthoic acid, para-nitrobenzoic acid, hexanoic acid, 2-ethyl hexanoic acid, decanoic acid and/or undecanoic acid. The polymeric dispersant also includes at least one tail block comprising at least one (meth)acrylic acid alkyl ester.

Abstract: Disclosed herein are adhesive compositions comprising (a) a first component; (b) a second component that chemically reacts with said first component; and (c) graphenic carbon particles having an oxygen content of no more than 2 atomic weight percent. Disclosed herein are associated methods for forming the adhesive compositions and applying the adhesive compositions to a substrate to form a bonded substrate.

Abstract: A probe device includes a case, a fixing base, a probe stage, a first camera and a first mirror. The case includes a bottom plate and a first side wall, which includes a first through hole and is vertically connected to the bottom plate. The fixing base, disposed inside the case, can move along a Z-axis direction. The probe stage, disposed inside the case, is used to carry a probe having a probe tip. The first camera is disposed outside the case and fixed to the first side wall. The first mirror is disposed relative to the first camera with a first angle formed between a surface of the first mirror and the normal line of the first camera. The first mirror can move along the Z-axis direction so that the first camera captures images of the probe tip through the first through hole via the first mirror.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device, comprising: forming a first nitride semiconductor layer on a substrate using a first temperature; decreasing a substrate temperature to a second temperature lower than the first temperature, after the forming the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer using the second temperature; increasing the substrate temperature to a third temperature higher than the first temperature, after the forming the second nitride semiconductor layer; and forming a third nitride semiconductor layer on the second nitride semiconductor layer using the third temperature.

Abstract: Methods are disclosed in which an electrically conductive substrate is immersed in electrodepositable composition including graphenic carbon particles, the substrate serving as an electrode in an electrical circuit comprising the electrode and a counter-electrode immersed in the composition, a coating being applied onto or over at least a portion of the substrate as electric current is passed between the electrodes. The electrodepositable composition comprises an aqueous medium, an ionic resin, and solid particles including graphenic carbon particles. The solid particles may also include lithium-containing particles.

Abstract: According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1-z1Inz1N (0<z1?1). The second semiconductor layer is provided on the light emitting part. The In-containing layer is provided at at least one of first and second positions. The first position is between the first semiconductor layer and the light emitting part. The second position is between the second semiconductor layer and the light emitting part. The In-containing layer includes In with a composition ratio different from the In composition ratio z1 and has a thickness 10 nm to 1000 nm.

Abstract: Co-dispersions of different types of graphenic carbon particles are produced using a polymeric dispersant. A portion of the graphenic carbon particles may be thermally produced. The polymeric dispersant may include an anchor block comprising glycidyl (meth)acrylate, 3,4-epoxycyclohexylmethyl(meth)acrylate, 2-(3,4-epoxycyclohexyl)ethyl(meth)acrylate, allyl glycidyl ether and mixtures thereof, reacted with a carboxylic acid comprising 3-hydroxy-2-naphthoic acid, para-nitrobenzoic acid, hexanoic acid, 2-ethyl hexanoic acid, decanoic acid and/or undecanoic acid. The polymeric dispersant may also include at least one tail block comprising at least one (meth)acrylic acid alkyl ester.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device, comprising: forming a first nitride semiconductor layer on a substrate using a first temperature; decreasing a substrate temperature to a second temperature lower than the first temperature, after the forming the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer using the second temperature; increasing the substrate temperature to a third temperature higher than the first temperature, after the forming the second nitride semiconductor layer; and forming a third nitride semiconductor layer on the second nitride semiconductor layer using the third temperature.

Abstract: A method of forming a coating layer on a glass substrate in a glass manufacturing process includes: providing a first coating precursor material for a selected coating layer composition to at least one multislot coater to form a first coating region of the selected coating layer; and providing a second coating precursor material for the selected coating layer composition to the multislot coater to form a second coating region of the selected coating layer over the first region. The first coating precursor material is different than the second precursor coating material.