Abstract: The present invention provides methods for treating vitiligo using antibodies which specifically bind to IFN-?.

Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

Abstract: The present disclosure provides antibodies which specifically bind to human CD36 protein (hCD36) and are capable of decreasing, inhibiting, and/or fully-blocking immune regulatory effects and/or ligand transport into cells mediated by CD36. Examples of CD36-mediated effects, among others, may include oxidized lipid transport into CD8 T cells potentially causing cell death and fatty acid transport in regulatory T cells increasing their survival and immune suppression in the tumor micro-environment (TME). The present disclosure also provides methods of using the antibodies (and compositions thereof) to treat various diseases and conditions responsive to decreasing, inhibiting and/or blocking CD36-dependent ligand transport into cells.

Abstract: A rehabilitation device includes a music player, a first pressure sensing device and a processor. The music player is configured to play a rhythm music at a beat speed. The first pressure sensing device is configured to capture a plurality of first foot pressure distributions. The processor is configured to obtain a plurality of first trigger mode pressure distributions that match a trigger mode in the first foot pressure distributions; obtain a trigger speed of the first trigger mode pressure distributions in the first foot pressure distributions; increase the beat speed based on the beat speed being slower than the trigger speed; and reduce the beat speed based on the beat speed being quicker than the trigger speed.

Abstract: The present disclosure provides IL-10 muteins and use of IL-10 muteins in fusion proteins. The IL-10 mutein or the fusion protein comprise one or more substitution on amino acids in position 104, position 107, and a combination thereof, relative to amino acids of wild-type IL-10. Advantageously, the IL-10 mutein or the fusion protein thereof are provided with reduced aggregation potency during purification and extended half-life.

Abstract: A semiconductor structure includes a first transistor and a second transistor, and a dielectric structure separating the first transistor from the second transistor. The first transistor includes a first gate structure and the second transistor includes a second gate structure. The dielectric structure includes a first portion sandwiched between the first gate structure and the second gate structure along a first direction, and a second portion protruding from the first portion along a second direction perpendicular to the first direction. The first portion has a first width and the second portion has a second width less than the first width, the first width and the second width being along the first direction, and the first portion has a first height and the second portion has a second height less than the first height.

Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.

Abstract: The present disclosure provides uses of with PD-L1 antibody-IL-10 fusion protein in the treatment of cancer and chronic virus infection diseases and the prevention of cancer recurrence via promoting T cell memory response.

Abstract: The present disclosure provides an IL-10 variant protein, a fusion protein comprising the IL-10 variant protein and a polypeptide, and the use thereof. The present disclosure also provides a method of producing the same and a pharmaceutical composition comprising the same.

Abstract: The present disclosure provides antibodies, including antibody fusions, which specifically bind to human PD-L1 protein (huPD-L1) and are capable of decreasing, inhibiting, and/or fully-blocking immune regulatory effects mediated by PD-L1, such as binding to the immune checkpoint molecule PD-1 in the tumor microenvironment. Additionally, the antibodies include fusions with the cytokine inhibitory factor, IL10, which can replenish and/or activate CD8+ T-cell cytotoxicity in the tumor microenvironment. The present disclosure also provides methods of using the antibodies (and compositions thereof) to treat diseases and conditions responsive to decreasing, inhibiting and/or blocking immune regulatory function or activity mediated by PD1 binding to PD-L1.

Abstract: A touch sensing method, apparatus for a touch panel, and electronic device are provided. The method includes: determining a first number of to-sense touch sensing circuits, and determining a second number of reference touch sensing circuits, each to-sense touch sensing circuit having a corresponding reference touch sensing circuit; causing each to-sense touch sensing circuit to receive a touch excitation signal TX1, and apply TX1 to a corresponding touch sensitive cell and receive a touch sensing signal therefrom, and output a first output signal; causing each reference touch sensing circuit to receive a touch reference signal DC/TX2, and apply DC/TX2 to a corresponding touch sensitive cell and receive a reference sensing signal therefrom, wherein DC/TX2 and TX1 are different signals; and obtaining, according to respective first and second output signals, a capacitance difference of capacitances sensed by each to-sense touch sensing circuit and its corresponding reference touch sensing circuit.

Abstract: An analog front-end (AFE) circuit, configured to be coupled to a sensor having a plurality of sensing units, includes a plurality of sensing circuits and a plurality of multiplexers. Each of the plurality of multiplexers is coupled between one of the plurality of sensing units and at least two of the plurality of sensing circuits.

Abstract: A device includes a substrate; semiconductor fins extending from the substrate; a liner layer on sidewalls of the semiconductor fins; an etch stop layer over the substrate and extending laterally from a first portion of the liner layer on a first one of the semiconductor fins to a second portion of the line layer on a second one of the semiconductor fins; an isolation structure over the etch stop layer, wherein the etch stop layer and the isolation structure include different materials; a gate dielectric layer over a top surface of the isolation structure; and a dielectric feature extending through the gate dielectric layer and into the isolation structure, wherein the isolation structure and the dielectric feature collectively extend laterally from the first portion of the liner layer to the second portion of the line layer.

Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

Abstract: The present disclosure provides antibodies, including antibody fusions, which specifically bind to human PD-L1 protein (huPD-L1) and are capable of decreasing, inhibiting, and/or fully-blocking immune regulatory effects mediated by PD-L1, such as binding to the immune checkpoint molecule PD-1 in the tumor microenvironment. Additionally, the antibodies include fusions with the cytokine inhibitory factor, IL10, which can replenish and/or activate CD8+ T-cell cytotoxicity in the tumor microenvironment. The present disclosure also provides methods of using the antibodies (and compositions thereof) to treat diseases and conditions responsive to decreasing, inhibiting and/or blocking immune regulatory function or activity mediated by PD1 binding to PD-L1.

Abstract: A touch control circuit, display-and-touch system, touch panel and touch sensing method are disclosed. The system includes a display panel, a touch panel having a plurality of touch sensors, a touch control circuit and at least one interference sensing capacitor configured to be insensitive to a touch on the touch panel and interference other than the interference from an interference layer of the display panel, the touch control circuit includes: at least one interference sensing channel configured to receive an interference sensing signal from the at least one interference sensing capacitor; and a plurality of touch sensing channels configured to receive touch sensing signals from at least part of touch sensors of the plurality of touch sensors; wherein a first electrode of each interference sensing capacitor is connected with the interference layer of the display panel, and a second electrode thereof is connected with a corresponding interference sensing channel.

Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

Abstract: A touch sensing method, apparatus for a touch panel, and electronic device are provided. The method includes: determining a first number of to-sense touch sensing circuits, and determining a second number of reference touch sensing circuits, each to-sense touch sensing circuit having a corresponding reference touch sensing circuit; causing each to-sense touch sensing circuit to receive a touch excitation signal TX1, and apply TX1 to a corresponding touch sensitive cell and receive a touch sensing signal therefrom, and output a first output signal; causing each reference touch sensing circuit to receive a touch reference signal DC/TX2, and apply DC/TX2 to a corresponding touch sensitive cell and receive a reference sensing signal therefrom, wherein DC/TX2 and TX1 are different signals; and obtaining, according to respective first and second output signals, a capacitance difference of capacitances sensed by each to-sense touch sensing circuit and its corresponding reference touch sensing circuit.

Abstract: An analog front-end (AFE) circuit, configured to be coupled to a sensor having a plurality of sensing units, includes a plurality of sensing circuits and a plurality of multiplexers. Each of the plurality of multiplexers is coupled between one of the plurality of sensing units and at least two of the plurality of sensing circuits.