Patents by Inventor Hung-Kai Chen

Hung-Kai Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210225414
    Abstract: A MRAM structure, which is provided with multiple source lines between active areas, each source line has multiple branches electrically connecting with the active areas at opposite sides in alternating arrangement. Multiple word lines traverse through the active areas to form transistors. Multiple storage units are disposed between the word lines on the active areas in staggered array arrangement, and multiple bit lines electrically connect with storage units on corresponding active areas, wherein each storage cell includes one of the storage unit, two of the transistors respectively at both sides of the storage unit, and two branches of the source line.
    Type: Application
    Filed: April 7, 2021
    Publication date: July 22, 2021
    Inventors: Po-Kai Hsu, Hung-Yueh Chen, Kun-I Chou, Jing-Yin Jhang, Hui-Lin Wang, Yu-Ping Wang
  • Patent number: 10991628
    Abstract: A device includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: April 27, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
  • Patent number: 10978351
    Abstract: A device that includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: April 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
  • Patent number: 10813974
    Abstract: The present invention provides methods for treating hepatitis B virus (HBV) infection using antibodies which specifically bind to human IFN?.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: October 27, 2020
    Assignee: ELIXIRON IMMUNOTHERAPEUTICS (HONG KONG) LIMITED
    Inventors: Hung-Kai Chen, Daw-Tsun Shih, Cheng-Lun Ku, Pei-Han Chung
  • Publication number: 20200289603
    Abstract: The present invention provides methods for treating hepatitis B virus (HBV) infection using antibodies which specifically bind to human IFN?.
    Type: Application
    Filed: June 1, 2020
    Publication date: September 17, 2020
    Applicant: ELIXIRON IMMUNOTHERAPEUTICS (HONG KONG) LIMITED
    Inventors: Hung-Kai CHEN, Daw-Tsun SHIH, Cheng-Lun KU, Pei-Han CHUNG
  • Publication number: 20200278782
    Abstract: The driving apparatus for driving a touch display panel includes a first voltage generating circuit configured to generate a common reference voltage, a second voltage generating circuit configured to generate a touch driving signal, and a control circuit configured to generate a switching signal. The switching signal is at the first voltage level during display periods for providing the common reference voltage to the touch display panel. The switching signal is at the second voltage level during touch periods for providing the touch driving signal to the touch display panel. A first touch display period includes a first display period a first touch period adjacent to the first display period. A second touch display period includes a second display period and a second touch period adjacent to the second display period. The first touch display period and the second touch display period are different in time length.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Inventors: Feng-Lin CHAN, Hung-Kai CHEN, Yuan-Fu HSUEH, Chun-Yuan PAI
  • Publication number: 20200251325
    Abstract: A semiconductor structure includes a substrate, a pair of first fins extending from the substrate, a pair of second fins extending from the substrate, an isolation feature over the substrate and separating bottom portions of the first and the second fins, a pair of first epitaxial semiconductor features over the pair of first fins respectively, a pair of second epitaxial semiconductor features over the pair of second fins respectively, and a first dielectric feature sandwiched between and separating the pair of first epitaxial semiconductor features. The pair of second epitaxial semiconductor features merge with each other.
    Type: Application
    Filed: April 21, 2020
    Publication date: August 6, 2020
    Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
  • Patent number: 10689362
    Abstract: A compound, capable of inhibiting kinases, for the treatments of diseases or disorders mediated by such kinases, has a structure of formula (I): or a stereoisomer, a tautomer, a pharmaceutically acceptable salt thereof. The compound can be used in the treatments of diseases or conditions mediated by CSF-1R, c-KIT, FLT3, or PDGFR kinases. Such diseases or conditions may include cancers, autoimmune diseases, and bone resorptive diseases.
    Type: Grant
    Filed: October 9, 2017
    Date of Patent: June 23, 2020
    Assignee: Development Center for Biotechnology
    Inventors: Shao-Zheng Peng, Chu-Bin Liao, Hung-Kai Chen, Chen-Hsuan Ho, Hung-Jyun Huang, Shian-Yi Chiou
  • Patent number: 10656751
    Abstract: The driving apparatus for driving a touch display panel includes a first voltage generating circuit configured to generate a common reference voltage, a second voltage generating circuit configured to generate a touch driving signal, and a control circuit configured to generate a switching signal. The switching signal is at the first voltage level during display periods for providing the common reference voltage to the touch display panel. The switching signal is at the second voltage level during touch periods for providing the touch driving signal to the touch display panel. A first touch display period includes a first display period a first touch period adjacent to the first display period. A second touch display period includes a second display period and a second touch period adjacent to the second display period. The first touch display period and the second touch display period are different in time length.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: May 19, 2020
    Assignee: NOVATEK MICROELECTRONICS CORP.
    Inventors: Feng-Lin Chan, Hung-Kai Chen, Yuan-Fu Hsueh, Chun-Yuan Pai
  • Patent number: 10651030
    Abstract: A semiconductor structure includes a substrate; first and second fins extending from the substrate and oriented lengthwise generally along a first direction; an isolation feature over the substrate and separating bottom portions of the first and the second fins; first and second epitaxial semiconductor features over the first and the second fins, respectively; and a first dielectric feature sandwiched between the first and the second epitaxial semiconductor features. A maximum width of the first dielectric feature is smaller than a width of the isolation feature between the first and the second fins along a second direction perpendicular to the first direction.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: May 12, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
  • Publication number: 20200091008
    Abstract: A device includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.
    Type: Application
    Filed: November 21, 2019
    Publication date: March 19, 2020
    Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
  • Publication number: 20200006354
    Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.
    Type: Application
    Filed: April 5, 2019
    Publication date: January 2, 2020
    Inventors: MING-CHANG WEN, KUO-HSIU HSU, JYUN-YU TIAN, WAN-YAO WU, CHANG-YUN CHANG, HUNG-KAI CHEN, LIEN JUNG HUNG
  • Publication number: 20190318922
    Abstract: A semiconductor structure includes a substrate; first and second fins extending from the substrate and oriented lengthwise generally along a first direction; an isolation feature over the substrate and separating bottom portions of the first and the second fins; first and second epitaxial semiconductor features over the first and the second fins, respectively; and a first dielectric feature sandwiched between the first and the second epitaxial semiconductor features. A maximum width of the first dielectric feature is smaller than a width of the isolation feature between the first and the second fins along a second direction perpendicular to the first direction.
    Type: Application
    Filed: May 24, 2019
    Publication date: October 17, 2019
    Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
  • Publication number: 20190308949
    Abstract: A compound, capable of inhibiting kinases, for the treatments of diseases or disorders mediated by such kinases, has a structure of formula (I): or a stereoisomer, a tautomer, a pharmaceutically acceptable salt thereof. The compound can be used in the treatments of diseases or conditions mediated by CSF-1R, c-KIT, FLT3, or PDGFR kinases. Such diseases or conditions may include cancers, autoimmune diseases, and bone resorptive diseases.
    Type: Application
    Filed: October 9, 2017
    Publication date: October 10, 2019
    Applicant: Development Center for Biotechnology
    Inventors: Shao-Zheng Peng, Chu-Bin Liao, Hung-Kai Chen, Chen-Hsuan Ho, Hung-Jyun Huang, Shian-Yi Chiou
  • Patent number: 10319581
    Abstract: A method includes providing a structure having a substrate and first and second fins over the substrate and oriented lengthwise generally along a first direction; epitaxially growing semiconductor source/drain (S/D) features over the first and second fins, wherein a first semiconductor S/D feature over the first fin merges with a second semiconductor S/D feature over the second fin; and performing a first etching process to an area between the first and second fins, wherein the first etching process separates the first and second semiconductor S/D features.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: June 11, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
  • Publication number: 20190164741
    Abstract: A method includes providing a structure having a substrate and first and second fins over the substrate and oriented lengthwise generally along a first direction; epitaxially growing semiconductor source/drain (S/D) features over the first and second fins, wherein a first semiconductor S/D feature over the first fin merges with a second semiconductor S/D feature over the second fin; and performing a first etching process to an area between the first and second fins, wherein the first etching process separates the first and second semiconductor S/D features.
    Type: Application
    Filed: November 30, 2017
    Publication date: May 30, 2019
    Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
  • Publication number: 20190157159
    Abstract: A device that includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.
    Type: Application
    Filed: November 17, 2017
    Publication date: May 23, 2019
    Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
  • Publication number: 20190125836
    Abstract: Disclosed are methods and compositions useful in preventing or treating a disease related to muscle wasting by using acidic fibroblast growth factor (aFGF).
    Type: Application
    Filed: October 30, 2018
    Publication date: May 2, 2019
    Applicant: Eusol Biotech Co., Ltd.
    Inventors: Hung-Kai CHEN, Jing-Yi HUANG, Huey-Wen HSIAO, Che-Ming YEH
  • Publication number: 20180329570
    Abstract: The driving apparatus for driving a touch display panel includes a first voltage generating circuit configured to generate a common reference voltage, a second voltage generating circuit configured to generate a touch driving signal, and a control circuit configured to generate a switching signal. The switching signal is at the first voltage level during display periods for providing the common reference voltage to the touch display panel. The switching signal is at the second voltage level during touch periods for providing the touch driving signal to the touch display panel. A first touch display period includes a first display period a first touch period adjacent to the first display period. A second touch display period includes a second display period and a second touch period adjacent to the second display period. The first touch display period and the second touch display period are different in time length.
    Type: Application
    Filed: May 10, 2018
    Publication date: November 15, 2018
    Inventors: Feng-Lin CHAN, Hung-Kai CHEN, Yuan-Fu HSUEH, Chun-Yuan PAI
  • Patent number: 9659776
    Abstract: First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: May 23, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Kai Chen, Tsung-Hung Lee, Han-Pin Chung, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan, Kuang-Yuan Hsu, Hsien-Chin Lin, Ka-Hing Fung