Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: An analog front-end (AFE) circuit, configured to be coupled to a sensor having a plurality of sensing units, includes a plurality of sensing circuits and a plurality of multiplexers. Each of the plurality of multiplexers is coupled between one of the plurality of sensing units and at least two of the plurality of sensing circuits.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: A device includes a substrate; semiconductor fins extending from the substrate; a liner layer on sidewalls of the semiconductor fins; an etch stop layer over the substrate and extending laterally from a first portion of the liner layer on a first one of the semiconductor fins to a second portion of the line layer on a second one of the semiconductor fins; an isolation structure over the etch stop layer, wherein the etch stop layer and the isolation structure include different materials; a gate dielectric layer over a top surface of the isolation structure; and a dielectric feature extending through the gate dielectric layer and into the isolation structure, wherein the isolation structure and the dielectric feature collectively extend laterally from the first portion of the liner layer to the second portion of the line layer.

Abstract: The display system comprising a main control module and a display module is provided. The main control module comprises a display driving circuit and a timing control circuit. The display driving circuit is used to output a display driving signal. The timing control circuit is coupled to the display driving circuit to receive the display driving signal, and convert the display driving signal into a digital signal. The display module comprises a first display panel to an N-th display panel, coupled to the timing control circuit and receiving the digital signal, so as to display corresponding multimedia content according to the digital signal, wherein N is a positive integer greater than 1, and the main control module is independently coupled to the display module.

Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

Abstract: The present disclosure provides antibodies, including antibody fusions, which specifically bind to human PD-L1 protein (huPD-L1) and are capable of decreasing, inhibiting, and/or fully-blocking immune regulatory effects mediated by PD-L1, such as binding to the immune checkpoint molecule PD-1 in the tumor microenvironment. Additionally, the antibodies include fusions with the cytokine inhibitory factor, IL10, which can replenish and/or activate CD8+ T-cell cytotoxicity in the tumor microenvironment. The present disclosure also provides methods of using the antibodies (and compositions thereof) to treat diseases and conditions responsive to decreasing, inhibiting and/or blocking immune regulatory function or activity mediated by PD1 binding to PD-L1.

Abstract: A touch control circuit, display-and-touch system, touch panel and touch sensing method are disclosed. The system includes a display panel, a touch panel having a plurality of touch sensors, a touch control circuit and at least one interference sensing capacitor configured to be insensitive to a touch on the touch panel and interference other than the interference from an interference layer of the display panel, the touch control circuit includes: at least one interference sensing channel configured to receive an interference sensing signal from the at least one interference sensing capacitor; and a plurality of touch sensing channels configured to receive touch sensing signals from at least part of touch sensors of the plurality of touch sensors; wherein a first electrode of each interference sensing capacitor is connected with the interference layer of the display panel, and a second electrode thereof is connected with a corresponding interference sensing channel.

Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

Abstract: A touch sensing method, apparatus for a touch panel, and electronic device are provided. The method includes: determining a first number of to-sense touch sensing circuits, and determining a second number of reference touch sensing circuits, each to-sense touch sensing circuit having a corresponding reference touch sensing circuit; causing each to-sense touch sensing circuit to receive a touch excitation signal TX1, and apply TX1 to a corresponding touch sensitive cell and receive a touch sensing signal therefrom, and output a first output signal; causing each reference touch sensing circuit to receive a touch reference signal DC/TX2, and apply DC/TX2 to a corresponding touch sensitive cell and receive a reference sensing signal therefrom, wherein DC/TX2 and TX1 are different signals; and obtaining, according to respective first and second output signals, a capacitance difference of capacitances sensed by each to-sense touch sensing circuit and its corresponding reference touch sensing circuit.

Abstract: An analog front-end (AFE) circuit, configured to be coupled to a sensor having a plurality of sensing units, includes a plurality of sensing circuits and a plurality of multiplexers. Each of the plurality of multiplexers is coupled between one of the plurality of sensing units and at least two of the plurality of sensing circuits.

Abstract: A touch sensing method, apparatus for a touch panel, and electronic device are provided. The method includes: determining a first number of to-sense touch sensing circuits, and determining a second number of reference touch sensing circuits, each to-sense touch sensing circuit having a corresponding reference touch sensing circuit; causing each to-sense touch sensing circuit to receive a touch excitation signal TX1, and apply TX1 to a corresponding touch sensitive cell and receive a touch sensing signal therefrom, and output a first output signal; causing each reference touch sensing circuit to receive a touch reference signal DC/TX2, and apply DC/TX2 to a corresponding touch sensitive cell and receive a reference sensing signal therefrom, wherein DC/TX2 and TX1 are different signals; and obtaining, according to respective first and second output signals, a capacitance difference of capacitances sensed by each to-sense touch sensing circuit and its corresponding reference touch sensing circuit.

Abstract: The present disclosure provides antibodies, including antibody fusions, which specifically bind to human PD-L1 protein (huPD-L1) and are capable of decreasing, inhibiting, and/or fully-blocking immune regulatory effects mediated by PD-L1, such as binding to the immune checkpoint molecule PD-1 in the tumor microenvironment. Additionally, the antibodies include fusions with the cytokine inhibitory factor, IL10, which can replenish and/or activate CD8+ T-cell cytotoxicity in the tumor microenvironment. The present disclosure also provides methods of using the antibodies (and compositions thereof) to treat diseases and conditions responsive to decreasing, inhibiting and/or blocking immune regulatory function or activity mediated by PD1 binding to PD-L1.

Abstract: An analog front-end circuit for a touch controller and an operating method thereof are provided. The analog front-end circuit includes an analog front-end, a first switch and a second switch. The analog front-end includes an input terminal and an output terminal. The first switch includes a first terminal and a second terminal. The first terminal of the first switch is coupled to the input terminal of the analog front-end, and the second terminal of the first switch is coupled to a panel routing. The second switch includes a first terminal and a second terminal. The first terminal of the second switch is coupled to the second terminal of the first switch, and the second terminal of the second switch is coupled to a reference voltage.

Abstract: A touch control circuit, display-and-touch system, touch panel and touch sensing method are disclosed. The system includes a display panel, a touch panel having a plurality of touch sensors, a touch control circuit and at least one interference sensing capacitor configured to be insensitive to a touch on the touch panel and interference other than the interference from an interference layer of the display panel, the touch control circuit includes: at least one interference sensing channel configured to receive an interference sensing signal from the at least one interference sensing capacitor; and a plurality of touch sensing channels configured to receive touch sensing signals from at least part of touch sensors of the plurality of touch sensors; wherein a first electrode of each interference sensing capacitor is connected with the interference layer of the display panel, and a second electrode thereof is connected with a corresponding interference sensing channel.

Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.

Abstract: The present disclosure provides antibodies, including antibody fusions, which specifically bind to human CSF1 receptor protein (huCSF1R) and are capable of decreasing, inhibiting, and/or fully-blocking immune regulatory effects mediated by huCSF1R, such as regulation of TAMs in the tumor microenvironment. Additionally, the antibodies include fusions with the cytokine inhibitory factor, IL10, which can replenish and/or activate CD8+ T-cell cytotoxicity in the tumor microenvironment. The present disclosure also provides methods of using the antibodies (and compositions thereof) to treat diseases and conditions responsive to decreasing, inhibiting and/or blocking immune regulatory function or activity mediated by CSF1 binding to CSF1R.