Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.

Abstract: A fingerprint detecting system comprises a fingerprint module, for receiving a fingerprint driving signal and performing a frequency modulation on the fingerprint driving signal, to correspondingly outputting a fingerprint signal with a first frequency based on the fingerprint driving signal, and a signal processing circuit, coupled to the fingerprint module, for receiving the fingerprint signal with the first frequency, performing a frequency demodulation to shift the first frequency of the fingerprint signal to a second frequency, and filtering the fingerprint signal with the second frequency based on the first frequency, whereby the filtered fingerprint signal is used for a fingerprint data analysis.

Abstract: A semiconductor structure includes a substrate, a pair of first fins extending from the substrate, a pair of second fins extending from the substrate, an isolation feature over the substrate and separating bottom portions of the first and the second fins, a pair of first epitaxial semiconductor features over the pair of first fins respectively, a pair of second epitaxial semiconductor features over the pair of second fins respectively, and a first dielectric feature sandwiched between and separating the pair of first epitaxial semiconductor features. The pair of second epitaxial semiconductor features merge with each other.

Abstract: The present disclosure provides antibodies, including antibody fusions, which specifically bind to human CSF1 receptor protein (huCSF1R) and are capable of decreasing, inhibiting, and/or fully-blocking immune regulatory effects mediated by huCSF1R, such as regulation of TAMs in the tumor microenvironment. Additionally, the antibodies include fusions with the cytokine inhibitory factor, IL10, which can replenish and/or activate CD8+T-cell cytotoxicity in the tumor microenvironment. The present disclosure also provides methods of using the antibodies (and compositions thereof) to treat diseases and conditions responsive to decreasing, inhibiting and/or blocking immune regulatory function or activity mediated by CSF1 binding to CSF1R.

Abstract: The driving apparatus for driving a touch display panel includes a first voltage generating circuit configured to generate a common reference voltage, a second voltage generating circuit configured to generate a touch driving signal, and a control circuit configured to generate a switching signal. The switching signal is at the first voltage level during display periods for providing the common reference voltage to the touch display panel. The switching signal is at the second voltage level during touch periods for providing the touch driving signal to the touch display panel. A first touch display period includes a first display period a first touch period adjacent to the first display period. A second touch display period includes a second display period and a second touch period adjacent to the second display period. The first touch display period and the second touch display period are different in time length.

Abstract: A touch sensing method, apparatus for a touch panel, and electronic device are provided. The method includes: determining a first number of to-sense touch sensing circuits, and determining a second number of reference touch sensing circuits, each to-sense touch sensing circuit having a corresponding reference touch sensing circuit; causing each to-sense touch sensing circuit to receive a touch excitation signal TX1, and apply TX1 to a corresponding touch sensitive cell and receive a touch sensing signal therefrom, and output a first output signal; causing each reference touch sensing circuit to receive a touch reference signal DC/TX2, and apply DC/TX2 to a corresponding touch sensitive cell and receive a reference sensing signal therefrom, wherein DC/TX2 and TX1 are different signals; and obtaining, according to respective first and second output signals, a capacitance difference of capacitances sensed by each to-sense touch sensing circuit and its corresponding reference touch sensing circuit.

Abstract: An analog front-end circuit for a touch controller and an operating method thereof are provided. The analog front-end circuit includes an analog front-end, a first switch and a second switch. The analog front-end includes an input terminal and an output terminal. The first switch includes a first terminal and a second terminal. The first terminal of the first switch is coupled to the input terminal of the analog front-end, and the second terminal of the first switch is coupled to a panel routing. The second switch includes a first terminal and a second terminal. The first terminal of the second switch is coupled to the second terminal of the first switch, and the second terminal of the second switch is coupled to a reference voltage.

Abstract: A fingerprint detecting system comprises a fingerprint module, for receiving a fingerprint driving signal and performing a frequency modulation on the fingerprint driving signal, to correspondingly outputting a fingerprint signal with a first frequency based on the fingerprint driving signal, and a signal processing circuit, coupled to the fingerprint module, for receiving the fingerprint signal with the first frequency, performing a frequency demodulation to shift the first frequency of the fingerprint signal to a second frequency, and filtering the fingerprint signal with the second frequency based on the first frequency, whereby the filtered fingerprint signal is used for a fingerprint data analysis.

Abstract: A fingerprint detecting system comprises a fingerprint module, for detecting a fingerprint of a user and outputting a current signal according to the detected fingerprint, and a signal processing circuit, coupled to the fingerprint module, for receiving the current signal from the fingerprint module, performing a offset cancellation for the current signal to remove an offset of the current signal, and converting the current signal without the offset to a voltage signal for fingerprint data analysis.

Abstract: A device includes a substrate; semiconductor fins extending from the substrate; a liner layer on sidewalls of the semiconductor fins; an etch stop layer over the substrate and extending laterally from a first portion of the liner layer on a first one of the semiconductor fins to a second portion of the line layer on a second one of the semiconductor fins; an isolation structure over the etch stop layer, wherein the etch stop layer and the isolation structure include different materials; a gate dielectric layer over a top surface of the isolation structure; and a dielectric feature extending through the gate dielectric layer and into the isolation structure, wherein the isolation structure and the dielectric feature collectively extend laterally from the first portion of the liner layer to the second portion of the line layer.

Abstract: A device includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.

Abstract: A device that includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.

Abstract: The present invention provides methods for treating hepatitis B virus (HBV) infection using antibodies which specifically bind to human IFN?.

Abstract: The present invention provides methods for treating hepatitis B virus (HBV) infection using antibodies which specifically bind to human IFN?.

Abstract: The driving apparatus for driving a touch display panel includes a first voltage generating circuit configured to generate a common reference voltage, a second voltage generating circuit configured to generate a touch driving signal, and a control circuit configured to generate a switching signal. The switching signal is at the first voltage level during display periods for providing the common reference voltage to the touch display panel. The switching signal is at the second voltage level during touch periods for providing the touch driving signal to the touch display panel. A first touch display period includes a first display period a first touch period adjacent to the first display period. A second touch display period includes a second display period and a second touch period adjacent to the second display period. The first touch display period and the second touch display period are different in time length.

Abstract: A semiconductor structure includes a substrate, a pair of first fins extending from the substrate, a pair of second fins extending from the substrate, an isolation feature over the substrate and separating bottom portions of the first and the second fins, a pair of first epitaxial semiconductor features over the pair of first fins respectively, a pair of second epitaxial semiconductor features over the pair of second fins respectively, and a first dielectric feature sandwiched between and separating the pair of first epitaxial semiconductor features. The pair of second epitaxial semiconductor features merge with each other.

Abstract: A compound, capable of inhibiting kinases, for the treatments of diseases or disorders mediated by such kinases, has a structure of formula (I): or a stereoisomer, a tautomer, a pharmaceutically acceptable salt thereof. The compound can be used in the treatments of diseases or conditions mediated by CSF-1R, c-KIT, FLT3, or PDGFR kinases. Such diseases or conditions may include cancers, autoimmune diseases, and bone resorptive diseases.

Abstract: The driving apparatus for driving a touch display panel includes a first voltage generating circuit configured to generate a common reference voltage, a second voltage generating circuit configured to generate a touch driving signal, and a control circuit configured to generate a switching signal. The switching signal is at the first voltage level during display periods for providing the common reference voltage to the touch display panel. The switching signal is at the second voltage level during touch periods for providing the touch driving signal to the touch display panel. A first touch display period includes a first display period a first touch period adjacent to the first display period. A second touch display period includes a second display period and a second touch period adjacent to the second display period. The first touch display period and the second touch display period are different in time length.

Abstract: A semiconductor structure includes a substrate; first and second fins extending from the substrate and oriented lengthwise generally along a first direction; an isolation feature over the substrate and separating bottom portions of the first and the second fins; first and second epitaxial semiconductor features over the first and the second fins, respectively; and a first dielectric feature sandwiched between the first and the second epitaxial semiconductor features. A maximum width of the first dielectric feature is smaller than a width of the isolation feature between the first and the second fins along a second direction perpendicular to the first direction.