Patents by Inventor Hung-Kai Chen
Hung-Kai Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10656751Abstract: The driving apparatus for driving a touch display panel includes a first voltage generating circuit configured to generate a common reference voltage, a second voltage generating circuit configured to generate a touch driving signal, and a control circuit configured to generate a switching signal. The switching signal is at the first voltage level during display periods for providing the common reference voltage to the touch display panel. The switching signal is at the second voltage level during touch periods for providing the touch driving signal to the touch display panel. A first touch display period includes a first display period a first touch period adjacent to the first display period. A second touch display period includes a second display period and a second touch period adjacent to the second display period. The first touch display period and the second touch display period are different in time length.Type: GrantFiled: May 10, 2018Date of Patent: May 19, 2020Assignee: NOVATEK MICROELECTRONICS CORP.Inventors: Feng-Lin Chan, Hung-Kai Chen, Yuan-Fu Hsueh, Chun-Yuan Pai
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Patent number: 10651030Abstract: A semiconductor structure includes a substrate; first and second fins extending from the substrate and oriented lengthwise generally along a first direction; an isolation feature over the substrate and separating bottom portions of the first and the second fins; first and second epitaxial semiconductor features over the first and the second fins, respectively; and a first dielectric feature sandwiched between the first and the second epitaxial semiconductor features. A maximum width of the first dielectric feature is smaller than a width of the isolation feature between the first and the second fins along a second direction perpendicular to the first direction.Type: GrantFiled: May 24, 2019Date of Patent: May 12, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Publication number: 20200091008Abstract: A device includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.Type: ApplicationFiled: November 21, 2019Publication date: March 19, 2020Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Publication number: 20200006354Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.Type: ApplicationFiled: April 5, 2019Publication date: January 2, 2020Inventors: MING-CHANG WEN, KUO-HSIU HSU, JYUN-YU TIAN, WAN-YAO WU, CHANG-YUN CHANG, HUNG-KAI CHEN, LIEN JUNG HUNG
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Publication number: 20190318922Abstract: A semiconductor structure includes a substrate; first and second fins extending from the substrate and oriented lengthwise generally along a first direction; an isolation feature over the substrate and separating bottom portions of the first and the second fins; first and second epitaxial semiconductor features over the first and the second fins, respectively; and a first dielectric feature sandwiched between the first and the second epitaxial semiconductor features. A maximum width of the first dielectric feature is smaller than a width of the isolation feature between the first and the second fins along a second direction perpendicular to the first direction.Type: ApplicationFiled: May 24, 2019Publication date: October 17, 2019Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Publication number: 20190308949Abstract: A compound, capable of inhibiting kinases, for the treatments of diseases or disorders mediated by such kinases, has a structure of formula (I): or a stereoisomer, a tautomer, a pharmaceutically acceptable salt thereof. The compound can be used in the treatments of diseases or conditions mediated by CSF-1R, c-KIT, FLT3, or PDGFR kinases. Such diseases or conditions may include cancers, autoimmune diseases, and bone resorptive diseases.Type: ApplicationFiled: October 9, 2017Publication date: October 10, 2019Applicant: Development Center for BiotechnologyInventors: Shao-Zheng Peng, Chu-Bin Liao, Hung-Kai Chen, Chen-Hsuan Ho, Hung-Jyun Huang, Shian-Yi Chiou
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Patent number: 10319581Abstract: A method includes providing a structure having a substrate and first and second fins over the substrate and oriented lengthwise generally along a first direction; epitaxially growing semiconductor source/drain (S/D) features over the first and second fins, wherein a first semiconductor S/D feature over the first fin merges with a second semiconductor S/D feature over the second fin; and performing a first etching process to an area between the first and second fins, wherein the first etching process separates the first and second semiconductor S/D features.Type: GrantFiled: November 30, 2017Date of Patent: June 11, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Publication number: 20190164741Abstract: A method includes providing a structure having a substrate and first and second fins over the substrate and oriented lengthwise generally along a first direction; epitaxially growing semiconductor source/drain (S/D) features over the first and second fins, wherein a first semiconductor S/D feature over the first fin merges with a second semiconductor S/D feature over the second fin; and performing a first etching process to an area between the first and second fins, wherein the first etching process separates the first and second semiconductor S/D features.Type: ApplicationFiled: November 30, 2017Publication date: May 30, 2019Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Publication number: 20190157159Abstract: A device that includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.Type: ApplicationFiled: November 17, 2017Publication date: May 23, 2019Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Publication number: 20190125836Abstract: Disclosed are methods and compositions useful in preventing or treating a disease related to muscle wasting by using acidic fibroblast growth factor (aFGF).Type: ApplicationFiled: October 30, 2018Publication date: May 2, 2019Applicant: Eusol Biotech Co., Ltd.Inventors: Hung-Kai CHEN, Jing-Yi HUANG, Huey-Wen HSIAO, Che-Ming YEH
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Publication number: 20180329570Abstract: The driving apparatus for driving a touch display panel includes a first voltage generating circuit configured to generate a common reference voltage, a second voltage generating circuit configured to generate a touch driving signal, and a control circuit configured to generate a switching signal. The switching signal is at the first voltage level during display periods for providing the common reference voltage to the touch display panel. The switching signal is at the second voltage level during touch periods for providing the touch driving signal to the touch display panel. A first touch display period includes a first display period a first touch period adjacent to the first display period. A second touch display period includes a second display period and a second touch period adjacent to the second display period. The first touch display period and the second touch display period are different in time length.Type: ApplicationFiled: May 10, 2018Publication date: November 15, 2018Inventors: Feng-Lin CHAN, Hung-Kai CHEN, Yuan-Fu HSUEH, Chun-Yuan PAI
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Patent number: 9659776Abstract: First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.Type: GrantFiled: May 12, 2016Date of Patent: May 23, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Kai Chen, Tsung-Hung Lee, Han-Pin Chung, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan, Kuang-Yuan Hsu, Hsien-Chin Lin, Ka-Hing Fung
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Publication number: 20160260610Abstract: First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.Type: ApplicationFiled: May 12, 2016Publication date: September 8, 2016Inventors: Hung-Kai Chen, Tsung-Hung Lee, Han-Pin Chung, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan, Kuang-Yuan Hsu, Hsien-Chin Lin, Ka-Hing Fung
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Patent number: 9362404Abstract: First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.Type: GrantFiled: February 21, 2014Date of Patent: June 7, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Kai Chen, Tsung-Hung Lee, Han-Pin Chung, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan, Kuang-Yuan Hsu, Hsien-Chin Lin, Ka-Hing Fung
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Patent number: 9224737Abstract: A method includes forming a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them. A space is defined between the first and second fins above a top surface of the STI region. A first height is defined between the top surface of the STI region and top surfaces of the first and second fins. A flowable dielectric material is deposited into the space. The dielectric material has a top surface above the top surface of the STI region, so as to define a second height between the top surface of the dielectric material and the top surfaces of the first and second fins. The second height is less than the first height. First and second fin extensions are epitaxially formed above the dielectric, on the first and second fins, respectively, after the depositing step.Type: GrantFiled: November 26, 2014Date of Patent: December 29, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hung-Kai Chen, Hsien-Hsin Lin, Chia-Pin Lin, Chien-Tai Chan, Yuan-Ching Peng
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Publication number: 20150243739Abstract: First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.Type: ApplicationFiled: February 21, 2014Publication date: August 27, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Kai Chen, Tsung-Hung Lee, Han-Pin Chung, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan, Kuang-Yuan Hsu, Hsien-Chin Lin, Ka-Hing Fung
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Publication number: 20150115322Abstract: A method includes forming a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them. A space is defined between the first and second fins above a top surface of the STI region. A first height is defined between the top surface of the STI region and top surfaces of the first and second fins. A flowable dielectric material is deposited into the space. The dielectric material has a top surface above the top surface of the STI region, so as to define a second height between the top surface of the dielectric material and the top surfaces of the first and second fins. The second height is less than the first height. First and second fin extensions are epitaxially formed above the dielectric, on the first and second fins, respectively, after the depositing step.Type: ApplicationFiled: November 26, 2014Publication date: April 30, 2015Inventors: Hung-Kai CHEN, Hsien-Hsin LIN, Chia-Pin LIN, Chien-Tai CHAN, Yuan-Ching PENG
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Patent number: 8937353Abstract: A method includes forming a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them. A space is defined between the first and second fins above a top surface of the STI region. A first height is defined between the top surface of the STI region and top surfaces of the first and second fins. A flowable dielectric material is deposited into the space. The dielectric material has a top surface above the top surface of the STI region, so as to define a second height between the top surface of the dielectric material and the top surfaces of the first and second fins. The second height is less than the first height. First and second fin extensions are epitaxially formed above the dielectric, on the first and second fins, respectively, after the depositing step.Type: GrantFiled: March 1, 2010Date of Patent: January 20, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hung-Kai Chen, Hsien-Hsin Lin, Chia-Pin Lin, Chien-Tai Chan, Yuan-Ching Peng
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Publication number: 20110210393Abstract: A method includes forming a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them. A space is defined between the first and second fins above a top surface of the STI region. A first height is defined between the top surface of the STI region and top surfaces of the first and second fins. A flowable dielectric material is deposited into the space. The dielectric material has a top surface above the top surface of the STI region, so as to define a second height between the top surface of the dielectric material and the top surfaces of the first and second fins. The second height is less than the first height. First and second fin extensions are epitaxially formed above the dielectric, on the first and second fins, respectively, after the depositing step.Type: ApplicationFiled: March 1, 2010Publication date: September 1, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hung-Kai Chen, Hsien-Hsin Lin, Chia-Pin Lin, Chien-Tai Chan, Yuan-Ching Peng
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Patent number: 7491112Abstract: A mobile robotic device capable of collision detection includes a base frame, two connecting rods pivotably mounted to the base frame for contact with the switches, two gearboxes slidably mounted at bilateral sides of the base frame respectively, two driving mechanisms connected with the gearboxes, two switches mounted to the base frame for generating signals, two springy members connected with the base frame and the connecting rods for keeping the gearboxes rebounding backward, two wheels mounted to the two gearboxes respectively, and a control system mounted to the base frame for receiving the signals from the switches and driving the driving mechanisms and thus driving clockwise or counterclockwise rotation of the wheels.Type: GrantFiled: April 26, 2006Date of Patent: February 17, 2009Assignee: E-Supply Insternational Co., Ltd.Inventor: Hung-Kai Chen