Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: An immersion liquid cooling heat sink includes a substrate, a fin assembly and a housing. The fin assembly is disposed on the substrate and includes a first fin module and a second fin module, both having multiple passages. Each passage has an inlet and an outlet, the first and second fin modules are spaced from each other to form a first groove which communicate between each inlet of the first fin module and each inlet of the second fin module. The housing is disposed on the substrate and has a first liquid inlet port, and covers the entire fin assembly and exposes each outlet. The first liquid inlet port is arranged corresponding to the first groove and communicates to the first groove, so as to enable a dielectric fluid to flow directly from the mid-section to two ends of the fin assembly.

Abstract: Provided is a promoter sequence induced by methyl jasmonate. Also provided are an expression cassette, a recombinant vector and a recombinant cell comprising the promoter sequence. In addition, further provided is a method for producing an exogenous protein using the expression vector, and in particular a method for producing a human elastin in a rice cell using the expression vector. Further provided is a skin care composition comprising the exogenous protein. The composition is not cytotoxic to HaCaT cell lines and CCD966SK cell lines, and can increase the expression levels of water retention-related genes hHAS2, hHAS3, hAQP3 and hFLG in a cell, thereby improving the water retention and barrier functions in the cell as well as having a broad application prospect.

Abstract: A data processing system, capable of managing a plurality of current operating system files associated with an application system, includes at least one processor. The at least one processor executes an operating system. The application system is resident in an application layer of the operating system, and functions in executing the current application system files. The operating system includes a scheduler, a file compare module, a backup storage module, and a file notifier. The file compare module can operate in a protected mode or an updated mode. When operating in the protected mode, the file compare module does not allow the current application system files associated with the application system to be modified.

Abstract: A method for forming a layer includes following operations. A workpiece is received in an apparatus for deposition. The apparatus for deposition includes a chamber, a pedestal disposed in the chamber to accommodate the workpiece, and a ring disposed on the pedestal. The ring includes a ring body having a first top surface and a second top surface and a barrier structure disposed between the first top surface and the second top surface. A vertical distance is defined by a top surface of the barrier structure and a top surface of the workpiece. The vertical distance is between approximately 0 mm and approximately 50 mm. A target disposed in the apparatus for deposition is sputtered. A sputtered material is deposited onto a top surface of the workpiece to form a layer. The barrier structure alters an electrical density distribution during the depositing the sputter material.

Abstract: The method includes receiving a semiconductor structure including a first surface, the first surface including a uniform material composition of ruthenium (Ru), selecting a first polishing slurry including a first abrasive component of titanium oxide and a first amine-based alkaline component of ammonium hydroxide, selecting a second polishing slurry including a second abrasive component of silicon oxide, a second amine-based alkaline component of hydroxyamine, and a non-amine alkaline component, polishing the first surface with the first polishing slurry until a second surface is exposed, the second surface including a conductive material and a dielectric material, and polishing the second surface with the second polishing slurry.

Abstract: A method comprises cleaning a surface of a reticle by irradiating the surface of the reticle in a first exposure device for a predetermined irradiation time. A layout pattern of the reticle is projected onto a photo resist layer of a wafer in a second exposure device by an EUV radiation. The photo resist layer is developed to generate a photo resist pattern on the wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is adjusted until the determined CDU satisfies a predetermined criterion.

Abstract: A method includes emitting, by a first portion of an optical inspection instrument, a radiation toward a supporting surface of a chuck, wherein the chuck is configured for fixing a semiconductor workpiece on the supporting surface, and the optical inspection instrument faces the supporting surface; receiving, by a second portion of the optical inspection instrument, a reflection of the radiation reflected from the chuck; analyzing the reflection of the radiation; determining whether a particle is present on the supporting surface of the chuck based on the analyzing the reflection of the radiation; and removing the particle by using a cleaning tool comprising an exhaust duct.

Abstract: In-situ defect count detection in post chemical mechanical polishing (post-CMP) is provided. Post-CMP is performed, in-situ and according to a recipe, on a surface of a semiconductor wafer within a post-CMP chamber. A light signal is scanned over a target area of the surface of the semiconductor wafer and a reflected light signal reflected from the target area is detected. A defect count of defects present in the target area is determined based on the reflected light signal reflected from the target area.

Abstract: This disclosure is directed to a three-dimensional vapor chamber device having a thermal base, a vertical thermal plate arranged up-right on the thermal base, and a working fluid accommodated in the thermal base and may flow to the vertical thermal plate. A first chamber having a first capillary structure is defined in the thermal base. A second chamber having a second capillary structure is defined in the vertical thermal plate. The first chamber and the second chamber are connected with an inlet and a return port. The second chamber has a flow channel structure connected between the inlet and the return port. The working fluid may flow to the second chamber through the inlet, pass the flow channel structure and return to the first chamber through the return port, so to define a specific flow path leading to a desirable and stable heat transfer efficiency.

Abstract: A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and/or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and/or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and/or MEOL conductive structures.

Abstract: A camera optical axis calibrating system includes at least two laser modules, a camera module and an analyzing module. The at least two laser modules generate at least two light beam sets. Each light beam set includes a first light beam and a second light beam, and a light beam angle difference is contained between the first light beam and the second light beam of each light beam set. The camera module at least includes a first camera assembly and a second camera assembly. The analyzing module is configured to confirm whether a space relation between the first camera assembly and the second camera assembly is that a first inclined line passes through a center of the first imaging plane, a second inclined line passes through a center of the second imaging plane, and an imaging angle difference is smaller than or equal to 1 degree.

Abstract: A three-level power factor rectifier includes a diode bridge arm, a bridge arm assembly, an input inductor, a capacitor bank, and a controller. The first bridge arm includes a first switch, a second switch, a third switch, and a fourth switch connected in series and in sequence. When the controller determines that a loading is less than a load threshold, the controller controls the three-level power factor rectifier entering a burst mode. In the burst sleep period, when a voltage value of an AC power source is greater than a first threshold, the first switch and the second switch are turned off; when the voltage value is less than a second threshold, the third switch and the fourth switch are turned on. When entering the burst period from the burst sleep period, the controller turns on the second switch and the third switch for a specific time period.

Abstract: A method comprises cleaning a surface of a reticle by irradiating the surface of the reticle in a first exposure device for a predetermined irradiation time. A layout pattern of the reticle is projected onto a photo resist layer of a wafer in a second exposure device by an EUV radiation. The photo resist layer is developed to generate a photo resist pattern on the wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is adjusted until the determined CDU satisfies a predetermined criterion.

Abstract: A polymer composite for preparing a low dielectric resin composition having a dielectric loss tangent (Df) that is less than or equal to 0.00200 is provided. The polymer composite includes a first styrene-based copolymer having a weight average molecular weight that is lower than 20,000 g/mol and a second styrene-based copolymer having a weight average molecular weight that is higher than 20,000 g/mol, wherein the weight ratio of the first styrene-based copolymer to the second styrene-based copolymer is from 5/95 to 95/5.

Abstract: A method disclosed herein includes forming a polishing pad configured for a chemical-mechanical polishing (CMP) process and polishing a workpiece using the polishing pad and a CMP slurry. Forming the polishing pad includes forming an interpenetrating polymer network having a first phase and a second phase embedded in the first phase, removing the second phase from the interpenetrating polymer network, thereby forming a porous top pad that includes a network of pores embedded in the first phase, and adhering the porous top pad to a sub pad, thereby forming the polishing pad. The second phase is different from the first phase in composition, and the interpenetrating polymer network has a substantially periodic pattern. Surface roughness of the porous top pad is consistent during the polishing of the workpiece.

Abstract: A hydrocarbon resin polymer including a repeating unit (A) is derived from dicyclopentadiene (DCPD). The hydrocarbon resin polymer has a fluorine substituent, and the content of the fluorine substituent is 100 to 4500 ppm based on the total weight of the hydrocarbon resin polymer. A manufacturing method of the above hydrocarbon resin polymer. The manufacturing method includes polymerizing a mixture in the presence of a fluorine-containing compound, wherein the fluorine-containing compound is a boron trifluoride complex and the mixture includes a dicyclopentadiene. A substrate structure includes a resin layer, and a conductive layer disposed on the resin layer. The resin layer is formed from a resin composition including the above hydrocarbon resin polymer using a cross-linking process.

Abstract: A heat exchange device may include a fin stack, plurality of heat pipes, and thermally conductive substrate. The fins stack includes a plurality of fins defining a stacked direction. The plurality of heat pipes have a fin stack portion, transportation portion, and substrate portion. The transportation portion is between the fin stack portion and the substrate portion. The thermally conductive substrate includes a top surface and bottom surface. The fin stack portion is coupled to each plurality of fins and the substrate portion is coupled to the top surface. The bottom surface is configured to couple to at least one packaged integrated circuit. The transportation portion includes at least one bend defining a gap between the fin stack and the top surface. A direction of the stacked direction is along a plane of the top surface.

Abstract: An electronic device with light-indicating function is provided. The electronic device includes a substrate, a first light source, a second light source, and a light guiding element. The substrate includes a first surface and a second surface, wherein the first surface is opposite to the second surface. The first light source is disposed on the first surface of the substrate, wherein the first light source faces the first direction, and the first light source provides a first light beam. The second light source is disposed on the first surface of the substrate, wherein the second light source faces the second direction, the second light source provides a second light beam, and the first direction is not parallel to the second direction. The light guiding element includes a first section and a second section.

Abstract: The method includes receiving a semiconductor device having a first surface and a second surface. The first surface is a top surface including a conductive material exposed thereon; and the second surface is an embedded surface including the conductive material and a dielectric material. The method also includes selecting a first polishing slurry to achieve a first polishing rate of the conductive material in the first polishing slurry and a second polishing rate of the dielectric material in the first polishing slurry. The method further includes selecting a second polishing slurry to achieve a third polishing rate of the conductive material in the second polishing slurry and a fourth polishing rate of the dielectric material in the second polishing slurry. The method additionally includes polishing the first surface with the first polishing slurry until the second surface is exposed; and polishing the second surface with the second polishing slurry.