Abstract: A method disclosed herein includes forming a polishing pad configured for a chemical-mechanical polishing (CMP) process and polishing a workpiece using the polishing pad and a CMP slurry. Forming the polishing pad includes forming an interpenetrating polymer network having a first phase and a second phase embedded in the first phase, removing the second phase from the interpenetrating polymer network, thereby forming a porous top pad that includes a network of pores embedded in the first phase, and adhering the porous top pad to a sub pad, thereby forming the polishing pad. The second phase is different from the first phase in composition, and the interpenetrating polymer network has a substantially periodic pattern. Surface roughness of the porous top pad is consistent during the polishing of the workpiece.

Abstract: A method includes emitting, by a first portion of an optical inspection instrument, a radiation toward a supporting surface of a chuck, wherein the chuck is configured for fixing a semiconductor workpiece on the supporting surface, and the optical inspection instrument faces the supporting surface; receiving, by a second portion of the optical inspection instrument, a reflection of the radiation reflected from the chuck; analyzing the reflection of the radiation; determining whether a particle is present on the supporting surface of the chuck based on the analyzing the reflection of the radiation; and removing the particle by using a cleaning tool comprising an exhaust duct.

Abstract: A semiconductor device structure includes a gate structure formed over a substrate. The semiconductor device structure also includes a source/drain structure formed beside the gate structure. The semiconductor device structure further includes a contact structure formed over the source/drain structure. The semiconductor device structure also includes a first cap layer formed over the contact structure. The semiconductor device structure further includes a dielectric structure extending from a top surface of the first cap layer into the contact structure. The dielectric structure and the source/drain structure are separated by the contact structure.

Abstract: A hydrocarbon resin polymer is provided. The hydrocarbon resin polymer includes: 0.15-15 mol % of repeating units (A), which are derived from bridged ring monomer compounds; 15-90 mol % of repeating units (B), which are derived from monovinyl aromatic compounds; and 8-80 mol % of repeating units (C), which are derived from divinyl aromatic compounds.

Abstract: In-situ defect count detection in post chemical mechanical polishing (post-CMP) is provided. Post-CMP is performed, in-situ and according to a recipe, on a surface of a semiconductor wafer within a post-CMP chamber. A light signal is scanned over a target area of the surface of the semiconductor wafer and a reflected light signal reflected from the target area is detected. A defect count of defects present in the target area is determined based on the reflected light signal reflected from the target area.

Abstract: The present disclosure provides a method for manufacturing a semiconductor. The method includes: forming a metal oxide layer over a gate structure over a substrate; forming a dielectric layer over the metal oxide layer; forming a metal layer over the metal oxide layer; and performing a chemical mechanical polish (CMP) operation to remove a portion of the dielectric layer and a portion of the metal layer, the CMP operation stopping at the metal oxide layer, wherein a slurry used in the CMP operation includes a ceria compound. The present disclosure also provides a method for planarizing a metal-dielectric surface.

Abstract: A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.

Abstract: The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.

Abstract: A method comprises cleaning a surface of a reticle by irradiating the surface of the reticle in a first exposure device for a predetermined irradiation time. A layout pattern of the reticle is projected onto a photo resist layer of a wafer in a second exposure device by an EUV radiation. The photo resist layer is developed to generate a photo resist pattern on the wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is adjusted until the determined CDU satisfies a predetermined criterion.

Abstract: A semiconductor device structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes a source/drain structure formed beside the gate structure. The structure also includes a contact structure formed over the source/drain structure. The structure also includes a dielectric structure extending into the contact structure. The dielectric structure and the source/drain structure are separated by the contact structure.

Abstract: A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and/or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and/or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and/or MEOL conductive structures.

Abstract: A method for thinning a wafer is provided. The method includes placing a wafer on a support assembly, and the support assembly includes a plurality of pin. The method includes securing an etching mask to a backside of the wafer, and the etching mask has an extending portion which covers a peripheral portion of the wafer. The etching mask has a plurality of circular bores extended along a vertical direction, and the etching mask is secured to the support assembly by connecting the circular bores and the pins. The method also includes performing a wet etching process on the backside of the wafer to foil a thinned wafer, wherein the thinned wafer has a peripheral portion with a first thickness and a central portion having a second thickness smaller than the first thickness.

Abstract: A driving system for driving piezoelectric pump includes one or more mechanical devices and a driving circuit system electrically connected to the at least one mechanical device. The driving circuit system includes a pump-driving unit, a linear voltage-stabilizing unit, a microcontroller unit, a current-sensing unit, and a connection unit. The microcontroller unit generates a first signal, a second signal, and a third signal, and the pump-driving unit receives these signals to drive the mechanical device. The current-sensing unit receives a fourth signal transmitted by the pump-driving unit to obtain an actuation current value of the mechanical device. The linear voltage-stabilizing unit, the current-sensing unit, and the microcontroller unit are coupled to each other through a fifth signal and a sixth signal. The connection unit and the microcontroller unit are coupled to each other through a reset signal, a seventh signal, and an eighth signal provided by the microcontroller unit.

Abstract: A temperature controlling apparatus includes a platen, a first and a second conduits, and a first and a second outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater. A first fluid enters the first inlet and exits the first outlet, the first heater heats the first fluid to a first heating temperature, and the first fluid is dispensed on the platen. The second conduit includes a second inlet, a second outlet, and a second heater. A second fluid enters the second inlet and exits the second outlet, the second heater heats the second fluid to a second heating temperature, and the second fluid is dispensed on the platen. The first and the second outlet thermal sensors are respectively disposed at the first and the second outlets to sense temperatures of the first and the second fluid.

Abstract: A method of forming a CMP pad includes providing a solution of a block copolymer (BCP), where the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition. The method further includes processing the BCP to form a polymer network having a first phase and a second phase embedded in the first phase, where the first phase includes the first segment and the second phase includes the second segment, and subsequently removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase. Thereafter, the method proceeds to combining the CMP top pad and a CMP sub-pad to form a CMP pad, where the CMP top pad is configured to engage with a workpiece during a CMP process.

Abstract: A lithography apparatus includes a wafer chuck configured to hold a wafer, a fluid source configured to contain a fluid to be applied towards the wafer during a lithography process, a dispensing nozzle positioned above the wafer chuck and in fluid communication with the fluid source, the dispensing nozzle having an adjustable cross-section, and a mechanical mechanism operable to apply a force towards an outer surface of the dispensing nozzle to change the adjustable cross-section.

Abstract: The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.

Abstract: A method of cleaning a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a first exposure device. The surface of the reticle is cleaned in the first exposure device by irradiating the surface of the reticle with an extreme ultraviolet (EUV) radiation for a predetermined irradiation time. After the cleaning, the reticle is transferred to a second exposure device for lithography operation.

Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: A reticle cleaning system includes a casing, a reticle holder, and a static charge reducing device. The reticle holder is in the casing and configured to hold a reticle. The static charge reducing device is above the reticle holder and includes a fluid generator, an ionizer, and a static charge sensor. The fluid generator is configured to control a humidity condition in the casing. The ionizer is configured to provide ionized air molecules to the reticle. The static charge sensor is configured to detect a static charge value on the reticle, wherein the ionizer is between the fluid generator and the static charge sensor.