Abstract: Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

Abstract: A model building system, a quality prediction system, and a quality management system using the same are provided. The quality management system includes the quality prediction system, a measurement device, and a quality inspection device. The quality prediction system includes the model building system and a model application device. The model building system includes a data transformation device and a model training device. The data transformation device transforms raw measured data, including measurement properties of products, to sets of cluster data and multi-dimensional metadata corresponding to the measurement properties. The model training device creates a prediction model according to the cluster data, the quality inspection results, and the multi-dimensional metadata corresponding to a portion of the products, and then modifies structural parameters of the prediction model according to the raw measured data and the quality inspection results corresponding to the other portion of the products.

Abstract: A semiconductor substrate has an exposed surface having a compositionally uniform metal, and an embedded surface having the metal and an oxide. The exposed surface is polished using a first slurry including a first abrasive and a first amine-based alkaline until the embedded surface is exposed. The embedded surface is polished using a second slurry including a second abrasive and a second amine-based alkaline. The second abrasive is different from the first abrasive. The second amine-based alkaline is different from the first amine-based alkaline. The metal and the oxide each has a first and a second removal rate in the first slurry, respectively, and a third and fourth removal rate in the second slurry, respectively. A ratio of the first removal rate to the second removal rate is greater than 30:1, and a ratio of the third removal rate to the fourth removal rate is about 1:0.5 to about 1:2.

Abstract: A method for forming a layer includes following operations. A workpiece is received in an apparatus for deposition. The apparatus for deposition includes a chamber, a pedestal disposed in the chamber to accommodate the workpiece, and a ring disposed on the pedestal. The ring includes a ring body having a first top surface and a second top surface and a barrier structure disposed between the first top surface and the second top surface. A vertical distance is defined by a top surface of the barrier structure and a top surface of the workpiece. The vertical distance is between approximately 0 mm and approximately 50 mm. A target disposed in the apparatus for deposition is sputtered. A sputtered material is deposited onto a top surface of the workpiece to form a layer. The barrier structure alters an electrical density distribution during the depositing the sputter material.

Abstract: Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

Abstract: The present invention provides a control method of a communication device, wherein the control method includes the steps of: controlling a wireless communication module of the communication device to use a first channel to communicate with an access point; detecting a plurality of channels to generate a plurality of first quality parameters, respectively, to generate a first channel detection result; receiving a second channel detection result from the access point, wherein the second channel detection result comprises a plurality of second quality parameters respectively generated by the access point detecting at least part of the plurality of channels; calculating a plurality of final quality parameters according to the first channel detection result and the second channel detection result; and determining whether to control the wireless communication module to switch from the first channel to a second channel according to the plurality of final quality parameters.

Abstract: A hinge is provided. The hinge includes a first plate, a second plate, a third plate, a shaft, a first elastic element, and a second elastic element. The second plate is connected to the first plate. The third plate is disposed on the second plate. The shaft is connected to the first plate and the second plate. The first elastic element surrounds the shaft. The second elastic element is connected to the second plate and the third plate. The second plate is rotatable around the shaft via the first elastic element. The second plate is movable relative to the third plate via the second elastic element.

Abstract: A scanner includes a light source configured to apply a light to a backside of a wafer. The light is reflected from the backside of the wafer. A first mirror is configured to receive the light from the backside of the wafer and reflect the light. A sensor is configured to receive the light from the first mirror and generate an output signal indicative of a backside topography of the wafer.

Abstract: A mask includes a substrate, a light-reflecting structure, a patterned layer, and a plurality of bumps. The substrate has a first surface and a second surface. The light-reflecting structure is located on the first surface of the substrate. The patterned layer is located on the light-reflecting structure. The bumps are located on the second surface of the substrate. The bumps define a plurality of voids therebetween and protrude in a direction away from the second surface of the substrate.

Abstract: A method of detecting phase loss of a three-phase AC power source includes steps of: acquiring any two line voltages of the AC power source with a first cycle period, acquiring a first digital signal and a second digital signal, performing an exclusive OR operation between the first digital signal and the second digital signal to generate a level signal, accumulating a high-level time count value, or accumulating a low-level time count value, resetting the low-level time count value when the high-level time count value is accumulated, or resetting the high-level time count value when the low-level time count value is accumulated, and determining that the AC power source occurs a phase-loss abnormality when the high-level time count value is greater than or equal to ? of the first cycle period or the low-level time count value is greater than or equal to ? of the first cycle period.

Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

Abstract: Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

Abstract: Embodiments of the present disclosure provide methods for processing a substrate using a measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective zones of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

Abstract: A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

Abstract: A scanner includes a light source configured to apply a light to a backside of a wafer. The light is reflected from the backside of the wafer. A first mirror is configured to receive the light from the backside of the wafer and reflect the light. A sensor is configured to receive the light from the first mirror and generate an output signal indicative of a backside topography of the wafer.

Abstract: A semiconductor device structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes a source/drain structure formed beside the gate structure. The structure also includes a contact structure formed over the source/drain structure. The structure also includes a dielectric structure extending into the contact structure. The dielectric structure and the source/drain structure are separated by the contact structure.

Abstract: A semiconductor processing method includes operations. An exposure process is performed on a semiconductor workpiece and includes selecting a target state of a reticle based on given data and regulating the reticle to reach the target state. A development process is performed on the semiconductor workpiece.

Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating a plurality of drops of a target material through a plurality of nozzles, adjacent two of the plurality of nozzles having a distance less than a width of a first one of the adjacent two of the plurality of nozzles, wherein the plurality of drops are aggregated to an elongated droplet; generating a laser pulse to convert the elongated droplet into plasma that generates an extreme ultraviolet (EUV) radiation; exposing a semiconductor substrate to the EUV radiation.

Abstract: A liquid supply device adapted to a liquid cooling system includes a casing, a cover, a plunger, a driving unit and a sensing unit. The casing has a liquid outlet. The cover is connected to the casing. A chamber is formed between the casing and the cover and contains a cooling liquid. The chamber communicates with the liquid outlet. The plunger is movably disposed in the chamber. The driving unit is disposed in the chamber and used for driving the plunger to move. The sensing unit is selectively disposed on one of the casing and the plunger. The sensing unit senses a liquid level of the cooling liquid and outputs a sensing signal with a predetermined status as the liquid level is equal to or lower than a predetermined height.