Patents by Inventor Hung-Wen Hsu

Hung-Wen Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240136117
    Abstract: A multi-phase coupled inductor includes a first iron core, a second iron core, and a plurality of coil windings. The first iron core includes a first body and a plurality of first core posts. The plurality of first core posts are connected to the first body. The second iron core is opposite to the first iron core. The second iron core and the first body are spaced apart from each other by a gap. The plurality of coil windings wrap around the plurality of first core posts, respectively. Each of the coil windings has at least two coils.
    Type: Application
    Filed: October 1, 2023
    Publication date: April 25, 2024
    Inventors: HUNG-CHIH LIANG, PIN-YU CHEN, HANG-CHUN LU, YA-WEN YANG, YU-TING HSU, WEI-ZHI HUANG
  • Publication number: 20240088187
    Abstract: Trenches in which to form a back side isolation structure for an array of CMOS image sensors are formed by a cyclic process that allows the trenches to be kept narrow. Each cycle of the process includes etching to add a depth segment to the trenches and coating the depth segment with an etch-resistant coating. The following etch step will break through the etch-resistant coating at the bottom of the trench but the etch-resistant coating will remain in the upper part of the trench to limit lateral etching and substrate damage. The resulting trenches have a series of vertically spaced nodes. The process may result in a 10% increase in photodiode area and a 30-40% increase in full well capacity.
    Type: Application
    Filed: January 3, 2023
    Publication date: March 14, 2024
    Inventors: Chih Cheng Shih, Tsun-Kai Tsao, Jiech-Fun Lu, Hung-Wen Hsu, Bing Cheng You, Wen-Chang Kuo
  • Patent number: 11916091
    Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.
    Type: Grant
    Filed: April 15, 2021
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Yeur-Luen Tu, U-Ting Chen, Shu-Ting Tsai, Hsiu-Yu Cheng
  • Publication number: 20240021430
    Abstract: A work piece is positioned on a work piece support, which includes a plurality of temperature control zones. A pre-etch surface topography is determined by measuring a plurality of pre-etch surface heights or thicknesses at a plurality of sites on the work piece. The plurality of sites correspond to the plurality of temperature control zones on the work piece support. At least a first zone of the temperature control zones is heated or cooled based on the measured plurality of pre-etch surface heights or thicknesses, so that the first zone has a first temperature different from a second temperature of a second zone of the temperature control zones. A dry etch is carried out while the first zone has the first temperature different from the second temperature of the second zone of the temperature control zones.
    Type: Application
    Filed: August 7, 2023
    Publication date: January 18, 2024
    Inventors: Ming Chyi Liu, Hung-Wen Hsu, Min-Yung Ko
  • Publication number: 20230361157
    Abstract: The present disclosure relates to, in part, an inductor structure that includes an etch stop layer arranged over an interconnect structure overlying a substrate. A magnetic structure includes a plurality of stacked layers is arranged over the etch stop layer. The magnetic structure includes a bottommost layer that is wider than a topmost layer. A first conductive wire and a second conductive wire extend in parallel over the magnetic structure. The magnetic structure is configured to modify magnetic fields generated by the first and second conductive wires. A pattern enhancement layer is arranged between the bottommost layer of the magnetic structure and the etch stop layer. The pattern enhancement layer has a first thickness, and the bottommost layer of the magnetic structure has a second thickness that is less than the first thickness.
    Type: Application
    Filed: July 19, 2023
    Publication date: November 9, 2023
    Inventors: Hung-Wen Hsu, Po-Han Huang, Wei-Li Huang
  • Publication number: 20230361149
    Abstract: In some embodiments, the present disclosure relates to a method for forming an image sensor and associated device structure. A backside deep trench isolation (BDTI) structure is formed in a substrate separating a plurality of pixel regions. The BDTI structure encloses a plurality of photodiodes and comprising a first BDTI component arranged at a crossroad of the plurality of pixel regions and a second BDTI component arranged at remaining peripheries of the plurality of pixel regions. The first BDTI component has a first depth from a backside of the substrate smaller than a second depth of the second BDTI component.
    Type: Application
    Filed: August 8, 2022
    Publication date: November 9, 2023
    Inventors: Hsin-Hung Chen, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Wen-Chang Kuo, Hung-Wen Hsu, Shih-Chang Liu
  • Patent number: 11784211
    Abstract: The present disclosure relates to, in part, an inductor structure that includes an etch stop layer arranged over an interconnect structure overlying a substrate. A magnetic structure includes a plurality of stacked layers is arranged over the etch stop layer. The magnetic structure includes a bottommost layer that is wider than a topmost layer. A first conductive wire and a second conductive wire extend in parallel over the magnetic structure. The magnetic structure is configured to modify magnetic fields generated by the first and second conductive wires. A pattern enhancement layer is arranged between the bottommost layer of the magnetic structure and the etch stop layer. The pattern enhancement layer has a first thickness, and the bottommost layer of the magnetic structure has a second thickness that is less than the first thickness.
    Type: Grant
    Filed: May 27, 2020
    Date of Patent: October 10, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Wen Hsu, Po-Han Huang, Wei-Li Huang
  • Publication number: 20230230993
    Abstract: The present disclosure describes a semiconductor device having radiation-sensing regions separated by trench isolation structures. The semiconductor structure includes a first trench fill structure on a substrate and a second trench fill structure on the substrate. The first trench fill structure has a first width and a convex bottom surface. The second trench fill structure has a concave bottom surface and a second width greater than the first width.
    Type: Application
    Filed: July 1, 2022
    Publication date: July 20, 2023
    Inventors: Ming Chyi LIU, Jiech-Fun LU, Hung-Wen HSU
  • Publication number: 20230063793
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a substrate. A resistor overlies the substrate. The resistor comprises a resistive structure overlying the substrate. The resistor also comprises a conductive contact overlying and electrically coupled to the resistive structure. A capping structure is disposed over the conductive contact, wherein the capping structure extends laterally over an upper surface of the conductive contact and vertically along a first sidewall of the conductive contact, such that a lower surface of the capping structure is disposed below a lower surface of the conductive contact.
    Type: Application
    Filed: August 26, 2021
    Publication date: March 2, 2023
    Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Li-Weng Chang
  • Patent number: 11522004
    Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. The substrate has a plurality of protrusions disposed along a first side of the substrate over the image sensing element and a ridge disposed along the first side of the substrate. The ridge continuously extends around the plurality of protrusions.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: December 6, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Chung Su, Hung-Wen Hsu, Jiech-Fun Lu, Shih-Pei Chou
  • Publication number: 20220231067
    Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) chip comprising a stilted pad structure. A wire underlies a semiconductor substrate on a frontside of the semiconductor substrate. Further, a trench isolation structure extends into the frontside of the semiconductor substrate. The stilted pad structure is inset into a backside of the semiconductor substrate that is opposite the frontside. The stilted pad structure comprises a pad body and a pad protrusion. The pad protrusion underlies the pad body and protrudes from the pad body, through a portion of the semiconductor substrate and the trench isolation structure, towards the wire. The pad body overlies the portion of the semiconductor substrate and is separated from the trench isolation structure by the portion of the semiconductor substrate.
    Type: Application
    Filed: April 19, 2021
    Publication date: July 21, 2022
    Inventors: Sin-Yao Huang, Hung-Ling Shih, Kuo-Ming Wu, Hung-Wen Hsu
  • Publication number: 20220223425
    Abstract: A work piece is positioned on a work piece support, which includes a plurality of temperature control zones. A pre-etch surface topography is determined by measuring a plurality of pre-etch surface heights or thicknesses at a plurality of sites on the work piece. The plurality of sites correspond to the plurality of temperature control zones on the work piece support. At least a first zone of the temperature control zones is heated or cooled based on the measured plurality of pre-etch surface heights or thicknesses, so that the first zone has a first temperature different from a second temperature of a second zone of the temperature control zones. A dry etch is carried out while the first zone has the first temperature different from the second temperature of the second zone of the temperature control zones.
    Type: Application
    Filed: January 8, 2021
    Publication date: July 14, 2022
    Inventors: Ming Chyi Liu, Hung-Wen Hsu, Min-Yung Ko
  • Patent number: 11315972
    Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: April 26, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Yeur-Luen Tu, U-Ting Chen, Shu-Ting Tsai, Hsiu-Yu Cheng
  • Patent number: 11246235
    Abstract: A waterproof structure includes a housing and a waterproof button. The housing has a first surface, a first side surface, and a second surface. The first side surface is recessed in the first surface to define a first opening, the first side surface is connected between the first surface and the second surface, and the second surface is exposed from the first opening. The waterproof button is disposed in the first opening and includes at least one first water blocking structure, and the first water blocking structure is pressed and deformed to abut against the first side surface.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: February 8, 2022
    Inventors: Hung-Wen Hsu, Che-Cheng Chang, Jian-Lun Chen
  • Publication number: 20210376053
    Abstract: The present disclosure relates to, in part, an inductor structure that includes an etch stop layer arranged over an interconnect structure overlying a substrate. A magnetic structure includes a plurality of stacked layers is arranged over the etch stop layer. The magnetic structure includes a bottommost layer that is wider than a topmost layer. A first conductive wire and a second conductive wire extend in parallel over the magnetic structure. The magnetic structure is configured to modify magnetic fields generated by the first and second conductive wires. A pattern enhancement layer is arranged between the bottommost layer of the magnetic structure and the etch stop layer. The pattern enhancement layer has a first thickness, and the bottommost layer of the magnetic structure has a second thickness that is less than the first thickness.
    Type: Application
    Filed: May 27, 2020
    Publication date: December 2, 2021
    Inventors: Hung-Wen Hsu, Po-Han Huang, Wei-Li Huang
  • Patent number: 11139239
    Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including an interconnect structure overlying a substrate. The interconnect structure has a plurality of metal layers overlying over the substrate. A first dielectric layer overlies an uppermost surface of the interconnect structure. The first dielectric layer has opposing sidewalls defining a trench. A first magnetic layer is disposed within the trench and conformally extends along the opposing sidewalls. Conductive wires are disposed within the trench and overlie the first magnetic layer. A second magnetic layer overlies the first magnetic layer and the conductive wires. The second magnetic layer laterally extends from over a first sidewall of the opposing sidewalls to a second sidewall of the opposing sidewalls.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: October 5, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Kai Tzeng, Wei-Li Huang
  • Publication number: 20210233945
    Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.
    Type: Application
    Filed: April 15, 2021
    Publication date: July 29, 2021
    Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Yeur-Luen Tu, U-Ting Chen, Shu-Ting Tsai, Hsiu-Yu Cheng
  • Publication number: 20210212230
    Abstract: A waterproof structure includes a housing and a waterproof button. The housing has a first surface, a first side surface, and a second surface. The first side surface is recessed in the first surface to define a first opening, the first side surface is connected between the first surface and the second surface, and the second surface is exposed from the first opening. The waterproof button is disposed in the first opening and includes at least one first water blocking structure, and the first water blocking structure is pressed and deformed to abut against the first side surface.
    Type: Application
    Filed: November 6, 2020
    Publication date: July 8, 2021
    Inventors: Hung-Wen HSU, Che-Cheng CHANG, Jian-Lun CHEN
  • Publication number: 20210098371
    Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including an interconnect structure overlying a substrate. The interconnect structure has a plurality of metal layers overlying over the substrate. A first dielectric layer overlies an uppermost surface of the interconnect structure. The first dielectric layer has opposing sidewalls defining a trench. A first magnetic layer is disposed within the trench and conformally extends along the opposing sidewalls. Conductive wires are disposed within the trench and overlie the first magnetic layer. A second magnetic layer overlies the first magnetic layer and the conductive wires. The second magnetic layer laterally extends from over a first sidewall of the opposing sidewalls to a second sidewall of the opposing sidewalls.
    Type: Application
    Filed: October 1, 2019
    Publication date: April 1, 2021
    Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Kai Tzeng, Wei-Li Huang
  • Patent number: D973040
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: December 20, 2022
    Inventors: Liang-Yi Liu, Hung-Wen Hsu, Che-Cheng Chang, Jian-Lun Chen