Patents by Inventor Hung-Wen Hsu
Hung-Wen Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180337211Abstract: In some embodiments, the present disclosure relates to a method of forming an absorption enhancement structure for an integrated chip image sensor that reduces crystalline defects resulting from the formation of the absorption enhancement structure. The method may be performed by forming a patterned masking layer over a first side of a substrate. A dry etching process is performed on the first side of the substrate according to the patterned masking layer to define a plurality of intermediate protrusions arranged along the first side of the substrate within a periodic pattern. A wet etching process is performed on the plurality of intermediate protrusions to form a plurality of protrusions. One or more absorption enhancement layers are formed over and between the plurality of protrusions. The wet etching process removes a damaged region of the intermediate protrusions that can negatively impact performance of the absorption enhancement structure.Type: ApplicationFiled: May 17, 2017Publication date: November 22, 2018Inventors: Ching-Chung Su, Hung-Wen Hsu, Jiech-Fun Lu, Shih-Pei Chou
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Publication number: 20180286907Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.Type: ApplicationFiled: March 31, 2017Publication date: October 4, 2018Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Chung SU, Hung-Wen HSU, Wei-Chuang WU, Wei-Lin CHEN, Jiech-Fun LU
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Patent number: 10084056Abstract: A method of manufacturing a semiconductor structure is provided. An interlayer dielectric layer is formed conformally over protruding structures formed over a silicon substrate and a surface of the silicon substrate. Next, a vaporized chemical etching operation is performed to the interlayer dielectric layer, so as to form a gap between two adjacent protruding structures. The gap has a target aspect ratio of at least 4, a top portion of the interlayer dielectric layer above an upper portion of each of the at least two protruding structures is trimmed at a first etching rate, and a bottom portion of the interlayer dielectric layer above a base portion of each of the at least two protruding structures is etched at a second etching rate smaller than the first etching rate, for enlarging the deposition process window and preventing voids from remaining inside a gap filling material in the gap.Type: GrantFiled: March 20, 2017Date of Patent: September 25, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hung-Wen Hsu, Hung-Ling Shih, Jiech-Fun Lu
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Publication number: 20180269299Abstract: A method of manufacturing a semiconductor structure is provided. An interlayer dielectric layer is formed conformally over protruding structures formed over a silicon substrate and a surface of the silicon substrate. Next, a vaporized chemical etching operation is performed to the interlayer dielectric layer, so as to form a gap between two adjacent protruding structures. The gap has a target aspect ratio of at least 4, a top portion of the interlayer dielectric layer above an upper portion of each of the at least two protruding structures is trimmed at a first etching rate, and a bottom portion of the interlayer dielectric layer above a base portion of each of the at least two protruding structures is etched at a second etching rate smaller than the first etching rate, for enlarging the deposition process window and preventing voids from remaining inside a gap filling material in the gap.Type: ApplicationFiled: March 20, 2017Publication date: September 20, 2018Inventors: Hung-Wen Hsu, Hung-Ling Shih, Jiech-Fun Lu
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Publication number: 20180226449Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.Type: ApplicationFiled: April 3, 2018Publication date: August 9, 2018Inventors: Shih Pei Chou, Hung-Wen Hsu, Ching-Chung Su, Chun-Han Tsao, Chia-Chieh Lin, Shu-Ting Tsai, Jiech-Fun Lu, Shih-Chang Liu, Yeur-Luen Tu, Chia-Shiung Tsai
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Publication number: 20180197903Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.Type: ApplicationFiled: February 26, 2018Publication date: July 12, 2018Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Yeur-Luen Tu, U-Ting Chen, Shu-Ting Tsai, Hsiu-Yu Cheng
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Patent number: 9991303Abstract: An image sensor structure is provided. The image sensor device structure includes a substrate, and the substrate includes an array region and a peripheral region. The image sensor device structure includes an anti-reflection layer formed on the substrate and a buffer layer formed on the anti-reflection layer. The image sensor device structure includes a first etch stop layer formed on the buffer layer and a metal grid structure formed on the first etch stop layer. The image sensor device structure also includes a dielectric layer formed on the metal grid structure.Type: GrantFiled: March 16, 2015Date of Patent: June 5, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hung-Wen Hsu, Ching-Chung Su, Cheng-Hsien Chou, Jiech-Fun Lu, Shih-Pei Chou, Yeur-Luen Tu
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Patent number: 9941320Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.Type: GrantFiled: March 21, 2016Date of Patent: April 10, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih Pei Chou, Hung-Wen Hsu, Ching-Chung Su, Chun-Han Tsao, Chia-Chieh Lin, Shu-Ting Tsai, Jiech-Fun Lu, Shih-Chang Liu, Yeur-Luen Tu, Chia-Shiung Tsai
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Patent number: 9917121Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.Type: GrantFiled: March 24, 2016Date of Patent: March 13, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Yeur-Luen Tu, U-Ting Chen, Shu-Ting Tsai, Hsiu-Yu Cheng
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Publication number: 20170278881Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.Type: ApplicationFiled: March 24, 2016Publication date: September 28, 2017Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Yeur-Luen Tu, U-Ting Chen, Shu-Ting Tsai, Hsiu-Yu Cheng
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Publication number: 20160276386Abstract: An image sensor structure is provided. The image sensor device structure includes a substrate, and the substrate includes an array region and a peripheral region. The image sensor device structure includes an anti-reflection layer formed on the substrate and a buffer layer formed on the anti-reflection layer. The image sensor device structure includes a first etch stop layer formed on the buffer layer and a metal grid structure formed on the first etch stop layer. The image sensor device structure also includes a dielectric layer formed on the metal grid structure.Type: ApplicationFiled: March 16, 2015Publication date: September 22, 2016Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hung-Wen HSU, Ching-Chung SU, Cheng-Hsien CHOU, Jiech-Fun LU, Shih-Pei CHOU, Yeur-Luen TU
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Publication number: 20160233266Abstract: A method of forming a semiconductor image sensing device includes: providing a semiconductor substrate; forming a radiation sensitive region and a peripheral region in the semiconductor substrate, wherein the peripheral region surrounds the radiation sensitive region and includes a top surface projected from a backside of the semiconductor substrate and a sidewall coplanar with a sidewall of the semiconductor substrate and perpendicular to the top surface; forming a photon blocking spacer in the peripheral region, wherein the photon blocking spacer covers a portion of the sidewall of the peripheral region; and forming an anti reflective coating adjacent to the photon blocking layer.Type: ApplicationFiled: April 6, 2016Publication date: August 11, 2016Inventors: HUNG-WEN HSU, JUNG-I LIN, CHING-CHUNG SU, JIECH-FUN LU, YEUR-LUEN TU, CHIA-SHIUNG TSAI
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Publication number: 20160204154Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.Type: ApplicationFiled: March 21, 2016Publication date: July 14, 2016Inventors: Shih Pei Chou, Hung-Wen Hsu, Ching-Chung Su, Chun-Han Tsao, Chia-Chieh Lin, Shu-Ting Tsai, Jiech-Fun Lu, Shih-Chang Liu, Yeur-Luen Tu, Chia-Shiung Tsai
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Patent number: 9337225Abstract: A backside illumination semiconductor image sensing device includes a semiconductor substrate. The semiconductor substrate includes a radiation sensitive diode and a peripheral region. The peripheral region is proximal to a sidewall of the backside illumination semiconductor image sensing device. The backside illumination semiconductor image sensing device further includes a first anti reflective coating (ARC) on a backside of the semiconductor substrate and a dielectric layer on the first anti reflective coating. Additionally, a radiation shielding layer is disposed on the dielectric layer. Moreover, the backside illumination semiconductor image sensing device has a photon blocking layer on the sidewall of the backside illumination semiconductor image sensing device. The at least a portion of a sidewall of the radiation shielding layer is not covered by the photon blocking layer and the photon blocking layer is configured to block photons penetrating into the semiconductor substrate.Type: GrantFiled: September 13, 2013Date of Patent: May 10, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hung-Wen Hsu, Jung-I Lin, Ching-Chung Su, Jiech-Fun Lu, Yeur-Luen Tu, Chia-Shiung Tsai
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Patent number: 9293392Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.Type: GrantFiled: September 6, 2013Date of Patent: March 22, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih Pei Chou, Hung-Wen Hsu, Ching-Chung Su, Chun-Han Tsao, Lin Chia-Chieh, Shu-Ting Tsai, Jiech-Fun Lu, Shih-Chang Liu, Yeur-Luen Tu, Chia-Shiung Tsai
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Publication number: 20150076646Abstract: A backside illumination semiconductor image sensing device includes a semiconductor substrate. The semiconductor substrate includes a radiation sensitive diode and a peripheral region. The peripheral region is proximal to a sidewall of the backside illumination semiconductor image sensing device. The backside illumination semiconductor image sensing device further includes a first anti reflective coating (ARC) on a backside of the semiconductor substrate and a dielectric layer on the first anti reflective coating. Additionally, a radiation shielding layer is disposed on the dielectric layer. Moreover, the backside illumination semiconductor image sensing device has a photon blocking layer on the sidewall of the of the backside illumination semiconductor image sensing device. The at least a portion of a sidewall of the radiation shielding layer is not covered by the photon blocking layer and the photon blocking layer is configured to block photons penetrating into the semiconductor substrate.Type: ApplicationFiled: September 13, 2013Publication date: March 19, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: HUNG-WEN HSU, JUNG-I LIN, CHING-CHUNG SU, JIECH-FUN LU, YEUR-LUEN TU, CHIA-SHIUNG TSAI
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Publication number: 20150069619Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.Type: ApplicationFiled: September 6, 2013Publication date: March 12, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih Pei Chou, Hung-Wen Hsu, Ching-Chung Su, Chun-Han Tsao, Lin Chia-Chieh, Shu-Ting Tsai, Jiech-Fun Lu, Shih-Chang Liu, Yeur-Luen Tu, Chia-Shiung Tsai
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Patent number: 8889460Abstract: The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface; a plurality of sensor elements disposed at the front surface of the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a radiation-shielding feature disposed over the back surface of the substrate and horizontally disposed between each of the plurality of sensor elements; a dielectric feature disposed between the back surface of the substrate and the radiation-shielding feature; and a metal layer disposed along sidewalls of the dielectric feature.Type: GrantFiled: November 22, 2013Date of Patent: November 18, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Wen Hsu, Shih-Chang Liu, Yeur-Luen Tu
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Patent number: 8791571Abstract: A method for preventing arcing during processing of a back side of a semiconductor wafer is provided herein. The method comprising includes steps of depositing a dielectric layer over the back side and depositing an anti-arcing layer over the dielectric layer. The anti-arcing layer is a conductive layer, but it not suitable for conducting signals or power. The method further includes etching an opening through a plurality of material layers of the semiconductor wafer. The opening exposes a conductive layer located on a front side of the semiconductor wafer. Additionally, the method includes depositing a conductive layer in the opening to form a through-wafer interconnect. A semiconductor wafer fabricated according to the method is also disclosed.Type: GrantFiled: March 14, 2013Date of Patent: July 29, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Wen Hsu, Tung-Ting Wu, Jiech-Fun Lu, Yeur-Luen Tu, Chia-Shiung Tsai
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Publication number: 20140065756Abstract: The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface; a plurality of sensor elements disposed at the front surface of the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a radiation-shielding feature disposed over the back surface of the substrate and horizontally disposed between each of the plurality of sensor elements; a dielectric feature disposed between the back surface of the substrate and the radiation-shielding feature; and a metal layer disposed along sidewalls of the dielectric feature.Type: ApplicationFiled: November 22, 2013Publication date: March 6, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Wen Hsu, Shih-Chang Liu, Yeur-Luen Tu