Abstract: A structure includes a metal feature, and a passivation layer having a portion overlapping the metal feature. The passivation layer includes a non-low-k dielectric material. A polymer layer is over the passivation layer. A Post-Passivation Interconnect (PPI) extends into the polymer layer to electrically couple to the metal feature. A guard ring includes a second PPI, wherein the guard ring is electrically grounded. The second PPI substantially encircles the first PPI.

Abstract: A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation layer; and a capacitor insulator including the portion of the passivation layer.

Abstract: A state machine circuit switching between multiple states is provided. The state machine circuit has: a state patch circuit for generating a patched predicted state value, a patched output value, and a selection signal according to a current state value and at least one of a second input signal, a predicted state value, and an output value of the state machine circuit; a first selection circuit for outputting the patched predicted state or the predicted state to a register according to the selection signal; and a second selection circuit for outputting the patched output value or the output value according to the selection signal, wherein the predicted state value and the output value are generated according to a first input signal and the current state value of the state machine circuit, and the predicted state value and the output value are not generated according to the second input signal.

Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

Abstract: A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation layer; and a capacitor insulator including the portion of the passivation layer.

Abstract: A video wall, having screens, cables, synchronization detection modules and a central control unit. The cables are operative to carry image data to be displayed on the screens. The synchronization detection modules are coupled between the screens and the cables for detection of a feature symbol. The central control unit collects detection results from the synchronization detection modules, and the detection results are utilized in the adjustment of the image data before cable transmission. In this manner, image display synchronization between the screens is achieved. The synchronization detection modules may be implemented as connectors, each having a first end connected to a screen and a second end connected to a cable.

Abstract: A state machine circuit switching between multiple states is provided. The state machine circuit has: a state patch circuit for generating a patched predicted state value, a patched output value, and a selection signal according to a current state value and at least one of a second input signal, a predicted state value, and an output value of the state machine circuit; a first selection circuit for outputting the patched predicted state or the predicted state to a register according to the selection signal; and a second selection circuit for outputting the patched output value or the output value according to the selection signal, wherein the predicted state value and the output value are generated according to a first input signal and the current state value of the state machine circuit, and the predicted state value and the output value are not generated according to the second input signal.

Abstract: A system and method for providing and manufacturing an inductor is provided. In an embodiment similar masks are reutilized to form differently sized inductors. For example, a two turn inductor and a three turn inductor may share masks for interconnects and coils, while only masks necessary for connections between the interconnects and coils may need to be newly developed.

Abstract: Disclosed herein is a single mask package apparatus on a device comprising a first substrate having a land disposed on a first surface, a stud disposed on the land and a protective layer disposed over the first surface of the first substrate and around the stud. The protective layer may optionally have a thickness of at least 3 ?m. A PPI may be disposed over the protective layer and in electrical contact with the stud, with a first portion of the PPI extending laterally from the stud. An interconnect may be disposed on and in electrical contact with the first portion of the PPI, and a second substrate mounted on the interconnect. A molding compound may be disposed over the PPI and around the interconnect. The stud may be a substantially solid material having a cylindrical cross section and may optionally be wirebonded to the land.

Abstract: A plurality of conductive pads are disposed on a substrate. A plurality of semiconductor dies are each disposed on a respective one of the conductive pads. A mold device is positioned over the substrate. The mold device contains a plurality of recesses that are each configured to accommodate a respective one of the semiconductor dies underneath.

Abstract: A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.

Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

Abstract: A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation layer; and a capacitor insulator including the portion of the passivation layer.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a first functional region of an integrated circuit over a workpiece, and forming a second functional region of the integrated circuit over the workpiece. The method includes forming a guard ring around the first functional region of the integrated circuit. The guard ring is formed in a material layer disposed over the first functional region and the second functional region.

Abstract: A method of light-emitting diode (LED) packaging includes coupling a number of LED dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing LED dies is placed over the sub-mount. The sub-mount, the LED dies, and the mold apparatus are heated in a thermal reflow process to bond the LED dies to the bonding pads. Each recess substantially restricts shifting of the LED die with respect to the bonding pad during the heating.

Abstract: A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.

Abstract: A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality of bonding pads on a side of the carrier structure distal the epi structure, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL). The vertical LED device further includes a first insulating film on a side of the carrier structure proximal the epi structure and a second insulating film on a side of the carrier structure distal the epi structure.

Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

Abstract: A method of light-emitting diode (LED) packaging includes coupling a number of LED dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing LED dies is placed over the sub-mount. The sub-mount, the LED dies, and the mold apparatus are heated in a thermal reflow process to bond the LED dies to the bonding pads. Each recess substantially restricts shifting of the LED die with respect to the bonding pad during the heating.

Abstract: A de-noise circuit and a de-noise method for differential signals and a chip for receiving differential signals are provided. The de-noise circuit includes a filter and a register. Both the filter and the register are disposed in the chip. The chip receives a differential signal through a first input terminal and a second input terminal. The filter is coupled between the first input terminal and the second input terminal of the chip. The filter filters out noises in the differential signal. The filter includes at least one filter unit. Each filter unit has at least one resistance value or at least one capacitance value. The register is coupled to the filter. The register receives and stores a control value. The register controls the resistance value or the capacitance value of at least one of the filter units based on the control value.