Patents by Inventor Hussein S. El-Ghoroury

Hussein S. El-Ghoroury has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150033539
    Abstract: A spatio-temporal directional light modulator is introduced. This directional light modulator can be used to create 3D displays, ultra-high resolution 2D displays or 2D/3D switchable displays with extended viewing angle. The spatio-temporal aspects of this novel light modulator allow it to modulate the intensity, color and direction of the light it emits within an wide viewing angle. The inherently fast modulation and wide angular coverage capabilities of this directional light modulator increase the achievable viewing angle, and directional resolution making the 3D images created by the display be more realistic or alternatively the 2D images created by the display having ultra high resolution.
    Type: Application
    Filed: September 15, 2014
    Publication date: February 5, 2015
    Inventors: Hussein S. El-Ghoroury, Zahir Y. Alpaslan, Jingbo Cai, Marty Maiers, Philip Warner, Dale A. McNeill
  • Patent number: 8928969
    Abstract: A novel spatio-optical directional light modulator with no moving parts is introduced. This directional light modulator can be used to create 2D/3D switchable displays of various sizes for mobile to large screen TV. The inherently fast modulation capability of this new directional light modulator increases the achievable viewing angle, resolution, and realism of the 3D image created by the display.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: January 6, 2015
    Assignee: Ostendo Technologies, Inc.
    Inventors: Zahir Y. Alpaslan, Hussein S. El-Ghoroury, Jingbo Cai, Dale A. McNeill
  • Patent number: 8912017
    Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.
    Type: Grant
    Filed: May 3, 2012
    Date of Patent: December 16, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Hussein S. El-Ghoroury, Chih-Li Chuang, Kameshwar Yadavalli, Qian Fan
  • Publication number: 20140353685
    Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.
    Type: Application
    Filed: August 13, 2014
    Publication date: December 4, 2014
    Inventors: Vitali Soukhoveev, Vladimir Ivantsov, Benjamin A. Haskell, Hussein S. El-Ghoroury, Alexander Syrkin
  • Publication number: 20140349427
    Abstract: Methods are described to utilize relatively low cost substrates and processing methods to achieve enhanced emissive imager pixel performance via selective epitaxial growth. An emissive imaging array is coupled with one or more patterned compound semiconductor light emitting structures grown on a second patterned and selectively grown compound semiconductor template article. The proper design and execution of the patterning and epitaxial growth steps, coupled with alignment of the epitaxial structures with the imaging array, results in enhanced performance of the emissive imager. The increased luminous flux achieved enables use of such images for high brightness display and illumination applications.
    Type: Application
    Filed: August 5, 2014
    Publication date: November 27, 2014
    Inventors: Hussein S. El-Ghoroury, Benjamin A. Haskell
  • Publication number: 20140347361
    Abstract: 3D light field display methods and apparatus with improved viewing angle, depth and resolution are introduced. The methods can be used to create a high quality 3D light field display of any size from smaller than a postage stamp to larger than a three story building.
    Type: Application
    Filed: August 5, 2014
    Publication date: November 27, 2014
    Inventors: Zahir Y. Alpaslan, Hussein S. El-Ghoroury
  • Publication number: 20140340434
    Abstract: In the dynamic gamut display systems, video input data is processed to extract metrics indicative of the gamut occupancy of the frame pixels. The extracted metrics are used to form a set of scale factors to be used by the display to synthesize an adapted gamut that matches the frame pixel color gamut from the native color primaries of the display. The generated gamut adaptation scale factors are used to convert the frame pixels' values to the adapted gamut which are provided to the display for modulation using the synthesized adapted gamut for each video frame or a sub-region of a video frame. The methods enable increased display brightness, reduced power consumption and reduced interface and processing bandwidth. Also disclosed is an adapted video frame data formatting method that maps the benefits of the adapted gamut into a reduced frame data size enabling bandwidth savings when used for video distribution.
    Type: Application
    Filed: August 5, 2014
    Publication date: November 20, 2014
    Inventors: Hussein S. El-Ghoroury, Andrew J. Lanzone
  • Patent number: 8854724
    Abstract: A spatio-temporal directional light modulator is introduced. This directional light modulator can be used to create 3D displays, ultra-high resolution 2D displays or 2D/3D switchable displays with extended viewing angle. The spatio-temporal aspects of this novel light modulator allow it to modulate the intensity, color and direction of the light it emits within an wide viewing angle. The inherently fast modulation and wide angular coverage capabilities of this directional light modulator increase the achievable viewing angle, and directional resolution making the 3D images created by the display be more realistic or alternatively the 2D images created by the display having ultra high resolution.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: October 7, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Hussein S. El-Ghoroury, Zahir Y. Alpaslan, Jingbo Cai, Marty Maiers, Philip Warner, Dale A. McNeill
  • Patent number: 8728938
    Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: May 20, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
  • Publication number: 20140083492
    Abstract: Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.
    Type: Application
    Filed: September 16, 2013
    Publication date: March 27, 2014
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Hussein S. El-Ghoroury, Dale A. McNeill, Selim E. Guncer
  • Patent number: 8673074
    Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.
    Type: Grant
    Filed: July 15, 2009
    Date of Patent: March 18, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Alexander Usikov, Alexander Syrkin, Robert G. W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg, Vladimir Ivantsov, Oleg Kovalenkov, Lisa Shapovalova
  • Patent number: 8629065
    Abstract: A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: January 14, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Philippe Spiberg, Hussein S. El-Ghoroury, Alexander Usikov, Alexander Syrkin, Bernard Scanlan, Vitali Soukhoveev
  • Publication number: 20130337639
    Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.
    Type: Application
    Filed: June 26, 2012
    Publication date: December 19, 2013
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
  • Publication number: 20130321581
    Abstract: Spatio-temporal light field cameras that can be used to capture the light field within its spatio temporally extended angular extent. Such cameras can be used to record 3D images, 2D images that can be computationally focused, or wide angle panoramic 2D images with relatively high spatial and directional resolutions. The light field cameras can be also be used as 2D/3D switchable cameras with extended angular extent. The spatio-temporal aspects of the novel light field cameras allow them to capture and digitally record the intensity and color from multiple directional views within a wide angle. The inherent volumetric compactness of the light field cameras make it possible to embed in small mobile devices to capture either 3D images or computationally focusable 2D images. The inherent versatility of these light field cameras makes them suitable for multiple perspective light field capture for 3D movies and video recording applications.
    Type: Application
    Filed: October 24, 2012
    Publication date: December 5, 2013
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Hussein S. El-Ghoroury, Zahir Y. Alpaslan, Jingbo Cai, Marty Maiers, Philip Warner, Dale A. McNeill
  • Patent number: 8567960
    Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: October 29, 2013
    Assignee: Ostendo Technologies, Inc.
    Inventors: Hussein S. El-Ghoroury, Robert G. W. Brown, Dale A. McNeill, Huibert DenBoer, Andrew J. Lanzone
  • Publication number: 20130258451
    Abstract: A spatio-temporal directional light modulator is introduced. This directional light modulator can be used to create 3D displays, ultra-high resolution 2D displays or 2D/3D switchable displays with extended viewing angle. The spatio-temporal aspects of this novel light modulator allow it to modulate the intensity, color and direction of the light it emits within an wide viewing angle. The inherently fast modulation and wide angular coverage capabilities of this directional light modulator increase the achievable viewing angle, and directional resolution making the 3D images created by the display be more realistic or alternatively the 2D images created by the display having ultra high resolution.
    Type: Application
    Filed: July 11, 2012
    Publication date: October 3, 2013
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Hussein S. El-Ghoroury, Zahir Y. Alpaslan, Jingbo Cai, Marty Maiers, Philip Warner, Dale A. McNeill
  • Patent number: 8536444
    Abstract: Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.
    Type: Grant
    Filed: September 26, 2011
    Date of Patent: September 17, 2013
    Assignee: Ostendo Technologies, Inc.
    Inventors: Hussein S. El-Ghoroury, Dale A. McNeill, Selim E. Guncer
  • Publication number: 20130141895
    Abstract: A novel spatio-optical directional light modulator with no moving parts is introduced. This directional light modulator can be used to create 2D/3D switchable displays of various sizes for mobile to large screen TV. The inherently fast modulation capability of this new directional light modulator increases the achievable viewing angle, resolution, and realism of the 3D image created by the display.
    Type: Application
    Filed: December 16, 2011
    Publication date: June 6, 2013
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Zahir Y. Alpaslan, Hussein S. El-Ghoroury, Jingbo Cai, Dale A. McNeill
  • Publication number: 20120288995
    Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed across the bonding surface using multiplicity of metal posts that are interfused across the bonding surface. The optical vias are formed across the bonding surface using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.
    Type: Application
    Filed: May 3, 2012
    Publication date: November 15, 2012
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Hussein S. El-Ghoroury, Chih-Li Chuang, Kameshwar Yadavalli, Qian Fan
  • Patent number: 8243770
    Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: August 14, 2012
    Assignee: Ostendo Technologies, Inc.
    Inventors: Hussein S. El-Ghoroury, Robert G. W. Brown, Dale A. McNeill, Huibert DenBoer, Andrew J. Lanzone