Abstract: Preprocessing of the light field input data for full parallax compressed light field 3D display systems is described. The described light field input data preprocessing can be utilized to format or extract information from input data, which can then be used by the light field compression system to further enhance the compression performance, reduce processing requirements, achieve real-time performance and reduce power consumption. This light field input data preprocessing performs a high-level 3D scene analysis and extracts data properties to be used by the light field compression system at different stages. As a result, rendering of redundant data is avoided while at the same rendering quality is improved.

Abstract: Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.

Abstract: A spatio-temporal directional light modulator is introduced. This directional light modulator can be used to create 3D displays, ultra-high resolution 2D displays or 2D/3D switchable displays with extended viewing angle. The spatio-temporal aspects of this novel light modulator allow it to modulate the intensity, color and direction of the light it emits within an wide viewing angle. The inherently fast modulation and wide angular coverage capabilities of this directional light modulator increase the achievable viewing angle, and directional resolution making the 3D images created by the display be more realistic or alternatively the 2D images created by the display having ultra high resolution.

Abstract: Spatio-temporal light field cameras that can be used to capture the light field within its spatio temporally extended angular extent. Such cameras can be used to record 3D images, 2D images that can be computationally focused, or wide angle panoramic 2D images with relatively high spatial and directional resolutions. The light field cameras can be also be used as 2D/3D switchable cameras with extended angular extent. The spatio-temporal aspects of the novel light field cameras allow them to capture and digitally record the intensity and color from multiple directional views within a wide angle. The inherent volumetric compactness of the light field cameras make it possible to embed in small mobile devices to capture either 3D images or computationally focusable 2D images. The inherent versatility of these light field cameras makes them suitable for multiple perspective light field capture for 3D movies and video recording applications.

Abstract: Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.

Abstract: Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.

Abstract: A compressed light field imaging system is described. The light field 3D data is analyzed to determine optimal subset of light field samples to be (acquired) rendered, while the remaining samples are generated using multi-reference depth-image based rendering. The light field is encoded and transmitted to the display. The 3D display directly reconstructs the light field and avoids data expansion that usually occurs in conventional imaging systems. The present invention enables the realization of full parallax 3D compressed imaging system that achieves high compression performance while minimizing memory and computational requirements.

Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods for bonding of semiconductor wafers incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed across the bonding surface using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed across the bonding surface using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers.

Abstract: A spatio-temporal directional light modulator is introduced. This directional light modulator can be used to create 3D displays, ultra-high resolution 2D displays or 2D/3D switchable displays with extended viewing angle. The spatio-temporal aspects of this novel light modulator allow it to modulate the intensity, color and direction of the light it emits within an wide viewing angle. The inherently fast modulation and wide angular coverage capabilities of this directional light modulator increase the achievable viewing angle, and directional resolution making the 3D images created by the display be more realistic or alternatively the 2D images created by the display having ultra high resolution.

Abstract: A novel spatio-optical directional light modulator with no moving parts is introduced. This directional light modulator can be used to create 2D/3D switchable displays of various sizes for mobile to large screen TV. The inherently fast modulation capability of this new directional light modulator increases the achievable viewing angle, resolution, and realism of the 3D image created by the display.

Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.

Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.

Abstract: Methods are described to utilize relatively low cost substrates and processing methods to achieve enhanced emissive imager pixel performance via selective epitaxial growth. An emissive imaging array is coupled with one or more patterned compound semiconductor light emitting structures grown on a second patterned and selectively grown compound semiconductor template article. The proper design and execution of the patterning and epitaxial growth steps, coupled with alignment of the epitaxial structures with the imaging array, results in enhanced performance of the emissive imager. The increased luminous flux achieved enables use of such images for high brightness display and illumination applications.

Abstract: 3D light field display methods and apparatus with improved viewing angle, depth and resolution are introduced. The methods can be used to create a high quality 3D light field display of any size from smaller than a postage stamp to larger than a three story building.

Abstract: In the dynamic gamut display systems, video input data is processed to extract metrics indicative of the gamut occupancy of the frame pixels. The extracted metrics are used to form a set of scale factors to be used by the display to synthesize an adapted gamut that matches the frame pixel color gamut from the native color primaries of the display. The generated gamut adaptation scale factors are used to convert the frame pixels' values to the adapted gamut which are provided to the display for modulation using the synthesized adapted gamut for each video frame or a sub-region of a video frame. The methods enable increased display brightness, reduced power consumption and reduced interface and processing bandwidth. Also disclosed is an adapted video frame data formatting method that maps the benefits of the adapted gamut into a reduced frame data size enabling bandwidth savings when used for video distribution.

Abstract: A spatio-temporal directional light modulator is introduced. This directional light modulator can be used to create 3D displays, ultra-high resolution 2D displays or 2D/3D switchable displays with extended viewing angle. The spatio-temporal aspects of this novel light modulator allow it to modulate the intensity, color and direction of the light it emits within an wide viewing angle. The inherently fast modulation and wide angular coverage capabilities of this directional light modulator increase the achievable viewing angle, and directional resolution making the 3D images created by the display be more realistic or alternatively the 2D images created by the display having ultra high resolution.

Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.

Abstract: Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.

Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.

Abstract: A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.