Abstract: A coil component includes a body in which a coil portion is embedded. The coil portion includes a support member; first insulators formed on first and second main surfaces of the support member, respectively, and having an opening having a planar coil shape; coils filling the openings; and second insulators covering the coils.

Abstract: An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer covering both sidewalls of the first fin-type active region, and a second device isolation layer covering both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalls of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structure.

Abstract: A coil component includes a body in which a coil portion is embedded. The coil portion includes a support member; first insulators formed on first and second main surfaces of the support member, respectively, and having an opening having a planar coil shape; coils filling the openings; and second insulators covering the coils.

Abstract: A semiconductor device includes a gate structure extending in a second direction on a substrate, a source/drain layer disposed on a portion of the substrate adjacent the gate structure in a first direction crossing the second direction, a first conductive contact plug on the gate structure, and a second contact plug structure disposed on the source/drain layer. The second contact plug structure includes a second conductive contact plug and an insulation pattern, and the second conductive contact plug and the insulation pattern are disposed in the second direction and contact each other. The first conductive contact plug and the insulation pattern are adjacent to each other in the first direction. The first and second conductive contact plugs are spaced apart from each other.

Abstract: A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

Abstract: Disclosed are a cooking apparatus and a method of controlling the same. The cooking apparatus includes a plurality of light sources configured to emit light toward a cooking container and grouped into a plurality of groups and a light emission driving controller configured to perform control in a manner that flame images are displayed by performing group controlling on the basis of at least one of a control command input by a user, a grouping form of the plurality of groups and a preset operation pattern.

Abstract: A semiconductor device includes a gate structure extending in a second direction on a substrate, a source/drain layer disposed on a portion of the substrate adjacent the gate structure in a first direction crossing the second direction, a first conductive contact plug on the gate structure, and a second contact plug structure disposed on the source/drain layer. The second contact plug structure includes a second conductive contact plug and an insulation pattern, and the second conductive contact plug and the insulation pattern are disposed in the second direction and contact each other. The first conductive contact plug and the insulation pattern are adjacent to each other in the first direction. The first and second conductive contact plugs are spaced apart from each other.

Abstract: A liquid crystal display device is provided. The liquid crystal display device comprises a substrate, a thin-film transistor (TFT) disposed on the substrate, an insulating layer disposed on the TFT, and a pixel electrode disposed on the insulating layer and connected to a drain electrode of the TFT via a contact hole formed in the insulating layer. The pixel electrode includes a stem electrode which extends in a first direction and a second direction that is perpendicular to the first direction, branch electrodes which extend from the stem electrode, and an extension electrode which is disposed to overlap the contact hole and which is connected to the branch electrodes. The extension electrode includes a slit.

Abstract: An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.

Abstract: A display apparatus includes a first substrate, a second substrate, and a spacer. The first substrate includes pixel areas including first and second pixel areas adjacent to each other and arranged in a matrix form defined by first and second directions substantially perpendicular to each other. The second substrate faces the first substrate. The spacer is disposed on the second substrate to extend toward the first substrate. Each of the pixel areas includes a pixel electrode and a thin film transistor connected to the pixel electrode through a contact hole.

Abstract: A semiconductor device includes first and second pads separated from each other, first and second test elements connected to the first and second pads and connected to each other in parallel between the first and second pads, a first diode connected to the first test element in series, and a second diode connected to the second test element in series.

Abstract: A liquid crystal display including a first substrate; a pixel electrode which includes a first subpixel electrode and a second subpixel electrode disposed adjacent to and spaced apart from the first subpixel electrode on the first substrate; a second substrate facing the first substrate; and a common electrode disposed on the second substrate and defines a first slit thereof and a second slit thereof which is connected to the first slit. The first subpixel electrode defines a first plate-shaped portion overlapping the first slit and a plurality of first branches which extend from the first plate-shaped portion, and the second subpixel electrode defines a second plate-shaped portion overlapping the second slit and a plurality of second branch portions which extend from the second plate-shaped portion. At least one of the first branch portions is connected to at least one of the second branch portions.

Abstract: A liquid crystal display includes a first insulation substrate, a gate line and a data line disposed on the first insulation substrate and insulated from and intersecting each other, a first passivation layer covering the gate line and the data line, a common electrode positioned on the first passivation layer and including a step-removed part, a second passivation layer covering the common electrode, a pixel electrode positioned on the second passivation layer, a second insulation substrate facing the first insulation substrate, and a main column spacer positioned on the second insulation substrate, where the step-removed part is provided by removing the common electrode at a position corresponding to the main column spacer.

Abstract: Provided are method of fabricating semiconductor device and computing system for implementing the method. The method of fabricating a semiconductor device includes forming a target layer, forming a first mask on the target layer to expose a first region, subsequently forming a second mask on the target layer to expose a second region separated from the first region in a first direction, subsequently forming a third mask in the exposed first region to divide the first region into a first sub region and a second sub region separated from each other in a second direction intersecting the first direction, and etching the target layer using the first through third masks such that the first and second sub regions and the second region are defined in the target layer.

Abstract: A device for driving a liquid crystal display, in which a pixel voltage is reduced by a kickback voltage variable according to grayscales, includes: a signal controller which receives an input image signal corresponding to a grayscale; an image signal corrector which corrects the input image signal and generates a data input signal; and a data driver which supplies a data voltage corresponding to the grayscale based on the data input signal, where the grayscale includes black, white grayscale and intermediate grayscales, the data voltage includes positive and negative voltages, and when a difference between a sum of the positive and negative voltages and a common voltage is defined an offset value, a first offset value corresponding to the black grayscale, a second offset value corresponding to the white grayscale and a third offset value corresponding to the intermediate grayscale satisfy the inequation: |first offset value?second offset value|?50 mV.

Abstract: An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer covering both sidewalls of the first fin-type active region, and a second device isolation layer covering both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalls of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structure.

Abstract: A coil component includes a body in which a coil portion is embedded. The coil portion includes a support member; first insulators formed on first and second main surfaces of the support member, respectively, and having an opening having a planar coil shape; coils filling the openings; and second insulators covering the coils.

Abstract: An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer covering both sidewalk of the first fin-type active region, and a second device isolation layer covering both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalk of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structure.

Abstract: A liquid crystal display includes: a signal controller configured to receive an input image signal corresponding to a gray from the outside, and an image signal corrector configured to correct the input image signal. The image signal corrector is configured to shift a first input image signal value corresponding to a black gray by a first value based on a common voltage, is configured to shift a second input image signal value corresponding to a halftone gray by a second value based on the common voltage, and is configured to shift a third input image signal value corresponding to a white gray by a third value based on the common voltage. The first value and the second value are larger than a kickback voltage of each of the black gray and the halftone gray, and the third value is the same as a kickback voltage of the white gray.

Abstract: A self balancing scooter steered with thighs is provided, which includes: two wheels having motors mounted; a motor housing for mounting the motors therein so as to allow rotary shafts of the motors to be located linearly; a footrest disposed on top of the motor housing; an erecting housing located on top of the footrest and having a battery and a controller mounted, the controller being adapted to control driving and direction change of the self balancing scooter, a cover disposed on top thereof, and an insertion hole formed on the center of the cover; a saddle having a seatpost fitted to the insertion hole of the cover; and a thigh steering plate mounted just on the underside of the saddle through the seatpost so as to be turned in left and right sides through the thighs of the rider sitting on the saddle to perform the direction change.