Abstract: Semiconductor devices are provided. The semiconductor device includes an active fin which extends along a first direction and has a protruding shape, a gate structure which is disposed on the active fin to extend along a second direction intersecting the first direction, and a spacer which is disposed on at least one side of the gate structure, wherein the gate structure includes a first area and a second area which is adjacent to the first area in the second direction, wherein a first width of the first area in the first direction is different from a second width of the second area in the first direction, and the spacer extends continuously along both the first area and the second area.

Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes: a gate line disposed on a first substrate; a gate insulating layer disposed on the gate line; a semiconductor layer disposed on the gate insulating layer; a data line disposed on the semiconductor layer and including a source electrode; a drain electrode disposed on the semiconductor layer and facing the source electrode via the semiconductor layer interposed therebetween; a passivation layer disposed on the data line and the drain electrode; a pixel electrode disposed on the passivation layer and connected to the drain electrode; a first alignment pattern layer disposed on the pixel electrode; and a first alignment layer disposed on the pixel electrode and the first alignment pattern layer and made of a photoalignment material, wherein the first alignment pattern layer includes a plurality of first alignment patterns separated with a predetermined interval, and the first alignment layer has a concave-convex shape

Abstract: A test pattern of a semiconductor device is provided, which includes first and second fins formed to project from a substrate and arranged to be spaced apart from each other, first and second gate structures formed to cross the first and second fins, respectively, a first source region and a first drain region arranged on the first fin on one side and the other side of the first gate structure, a second source region and a second drain region arranged on the second fin on one side and the other side of the second gate structure, a first conductive pattern connected to the first and second drain regions to apply a first voltage to the first and second drain regions and a second conductive pattern connecting the first source region and the second gate structure to each other.

Abstract: A semiconductor device includes a gate structure extending in a second direction on a substrate, a source/drain layer disposed on a portion of the substrate adjacent the gate structure in a first direction crossing the second direction, a first conductive contact plug on the gate structure, and a second contact plug structure disposed on the source/drain layer. The second contact plug structure includes a second conductive contact plug and an insulation pattern, and the second conductive contact plug and the insulation pattern are disposed in the second direction and contact each other. The first conductive contact plug and the insulation pattern are adjacent to each other in the first direction. The first and second conductive contact plugs are spaced apart from each other.

Abstract: A display device according to an exemplary embodiment of the present invention includes: a first insulation substrate; a thin film transistor disposed on the first insulation substrate; a pixel electrode coupled to the thin film transistor; a second insulation substrate facing the first insulation substrate; and a common electrode disposed on the second insulation substrate. The pixel electrode includes a first subpixel electrode that includes a first horizontal stem portion by which two different regions where arrangements of liquid crystal molecules are respectively different are divided, and a second subpixel electrode that includes a second horizontal stem portion by which two regions where the arrangements of the liquid crystal molecules are respectively different are divided and a cross-shaped stem portion by which four regions where the arrangements of the liquid crystal molecules are respectively different are divided.

Abstract: An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.

Abstract: Disclosed is a method for driving a two-wheel self-balancing scooter to maintain straight drivability at occurrence of external force. The method includes a driving ready step of applying a power to the two-wheel self-balancing scooter (S10), a driving step of setting a driving speed and a forward/backward direction by leaning an occupant's body forward or backward (S20), when one wheel goes flat, a revolutions increasing step of rapidly increasing revolutions of the flat wheel (S30), a revolutions decreasing step of decreasing revolutions of a normal wheel according to the revolutions of the flat wheel (S40), a revolutions synchronizing step of equally setting the revolutions of the flat wheel and the normal wheel (S50), and a synchronization repeating step of repeating the revolutions synchronizing step (S60).

Abstract: An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer covering both sidewalk of the first fin-type active region, and a second device isolation layer covering both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalk of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structure.

Abstract: A liquid crystal display includes: first and second gate lines disposed on the first substrate and which respectively transmit first and second gate signals; first, second and third data lines disposed on the first substrate; a first switching element connected to the first gate line and the first data line; a second switching element connected to the first gate line and the second data line; a third switching element connected to the second gate line and the second data line; a fourth switching element connected to the second gate line and the third data line; first and second pixel electrodes respectively connected to the first and second switching and which form a first liquid crystal capacitor; and third and fourth pixel electrodes respectively connected to the third and fourth switching elements and which form a second liquid crystal capacitor.

Abstract: A semiconductor device includes a substrate having a transistor area, a gate structure disposed on the transistor area of the substrate, a first interlayer insulating layer covering the gate structure, a blocking pattern disposed on the first interlayer insulating layer, and a jumper pattern disposed on the blocking pattern. The jumper pattern includes jumper contact plugs vertically penetrating the first interlayer insulating layer to be in contact with the substrate exposed at both sides of the gate structure, and a jumper section configured to electrically connect the jumper contact plugs.

Abstract: Embodiments of the present invention relate to a biodegradable scaffold for replacing tissue or inducing tissue regeneration and a preparation method thereof, wherein the scaffold comprises at least one woven silk tube layer and a collagen layer inside the tube layer. The scaffold is excellent in terms of tissue regeneration and mechanical properties and causes little or no immune response after implantation. Thus, the scaffold can be effectively used as a matrix for the regeneration of ligaments and tendons and the repair of injured muscles.

Abstract: A liquid crystal display includes a first substrate, a second substrate facing the first substrate with a predetermined interval therebetween, a liquid crystal material filled between the first substrate and the second substrate, a column spacer disposed at the second substrate and maintaining the predetermined interval between the first substrate and the second substrate, a passivation layer disposed at the first substrate, a pixel electrode disposed on the passivation layer; and a fixing protrusion which is disposed on the first substrate, is positioned at an opposing surface of the column spacer and includes at least one of a lower layer including the passivation layer and an upper layer including the pixel electrode.

Abstract: Methods of forming field effect transistors include selectively etching source and drain region trenches into a semiconductor region using a gate electrode as an etching mask. An epitaxial growth process is performed to fill the source and drain region trenches. Silicon germanium (SiGe) source and drain regions may be formed using an epitaxial growth process. During this growth process the bottoms and sidewalls of the trenches may be used as “seeds” for the silicon germanium growth. An epitaxial growth step may then be performed to define silicon capping layers on the SiGe source and drain regions.

Abstract: A liquid crystal display according to an embodiment of the present invention includes: first and second substrates opposed to each other; a liquid crystal layer including liquid crystal molecules interposed between the first and second substrates; a gate line formed on the first substrate and transmitting a gate signal; first and second data lines formed on the first substrate and transmitting first and second data voltages having different polarities; a first switching element connected to the gate line and the first data line; a second switching element connected to the gate line and the second data line; and first and second pixel electrodes that are connected to the first and second switching elements, respectively, and separated from each other, wherein the liquid crystal layer has positive dielectric anisotropy.

Abstract: A curved display device comprises: a first substrate and a second substrate facing each other and having a curvature; a liquid crystal layer between the first and second substrates; a first polarizing layer between the liquid crystal layer and a first surface of the first substrate that faces the liquid crystal layer, or positioned to face a second surface of the first substrate opposite to the first surface of the first substrate; and a second polarizing layer between the liquid crystal layer and a first surface of the second substrate that faces the liquid crystal layer, or positioned to face a second surface of the second substrate opposite to the first surface of the second substrate; wherein at least one of the first and second polarizing layers is either between the first substrate and the liquid crystal layer or between the second substrate and the liquid crystal layer.

Abstract: A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate insulation layer formed on a silicon substrate, at least one nanorod embedded in the gate insulation layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate insulation layer between the source electrode and the drain electrode.

Abstract: A display device according to an exemplary embodiment of the present invention includes: a first insulation substrate; a thin film transistor disposed on the first insulation substrate; a pixel electrode coupled to the thin film transistor; a second insulation substrate facing the first insulation substrate; and a common electrode disposed on the second insulation substrate. The pixel electrode includes a first subpixel electrode that includes a first horizontal stem portion by which two different regions where arrangements of liquid crystal molecules are respectively different are divided, and a second subpixel electrode that includes a second horizontal stem portion by which two regions where the arrangements of the liquid crystal molecules are respectively different are divided and a cross-shaped stem portion by which four regions where the arrangements of the liquid crystal molecules are respectively different are divided.

Abstract: A liquid crystal display includes: first and second gate lines disposed on the first substrate and which respectively transmit first and second gate signals; first, second and third data lines disposed on the first substrate; a first switching element connected to the first gate line and the first data line; a second switching element connected to the first gate line and the second data line; a third switching element connected to the second gate line and the second data line; a fourth switching element connected to the second gate line and the third data line; first and second pixel electrodes respectively connected to the first and second switching and which form a first liquid crystal capacitor; and third and fourth pixel electrodes respectively connected to the third and fourth switching elements and which form a second liquid crystal capacitor.

Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes: a gate line disposed on a first substrate; a gate insulating layer disposed on the gate line; a semiconductor layer disposed on the gate insulating layer; a data line disposed on the semiconductor layer and including a source electrode; a drain electrode disposed on the semiconductor layer and facing the source electrode via the semiconductor layer interposed therebetween; a passivation layer disposed on the data line and the drain electrode; a pixel electrode disposed on the passivation layer and connected to the drain electrode; a first alignment pattern layer disposed on the pixel electrode; and a first alignment layer disposed on the pixel electrode and the first alignment pattern layer and made of a photoalignment material, wherein the first alignment pattern layer includes a plurality of first alignment patterns separated with a predetermined interval, and the first alignment layer has a concave-convex shape

Abstract: An information-capture device includes a video-capture device, a pre-processing module, an image-processing module, and a text generation module. The video capturing module is configured to capture a video data. The pre-processing module is configured to divide the video data into a background data and a foreground data. The image-processing module generates an object feature and the object-motion information according to the foreground data, and generates captured-space information of the video data according to the background data. The text generation module generates event-description information according to the object feature, the object-motion information, and the captured-space information, in which the event-description information is related to an event that occurred in the video data, including the information related to the event, and is a machine-readable text file.