Abstract: An electronic device with an antenna, e.g., for near field communication (NFC) is disclosed. The electronic device includes a display, a fixing frame fixing the display and including a bezel area at a periphery of the display, and a communication module disposed at the bezel area. The communication module includes a circuit board, which has an antenna radiator and a communication circuit disposed thereon. The communication module performs wireless communication with an external apparatus via the communication circuit and antenna radiator.

Abstract: A separator for secondary batteries is disclosed. The separator includes a separator main body and a coating layer disposed on the separator main body and including a first particle having a first melting point and a second particle having a second melting point that is higher than the first melting point.

Abstract: An electronic device with an antenna, e.g., for near field communication (NFC) is disclosed. The electronic device includes a display, a fixing frame fixing the display and including a bezel area at a periphery of the display, and a communication module disposed at the bezel area. The communication module includes a circuit board, which has an antenna radiator and a communication circuit disposed thereon. The communication module performs wireless communication with an external apparatus via the communication circuit and antenna radiator.

Abstract: The present invention relates to a two-photon fluorescent probe, more particularly a two-photon fluorescent probe represented by Formula 1, a method for preparing same and a method for imaging thiols in mitochondria using same. The two-photon fluorescent probe according to the present invention, having two probes introduced in one molecule, can selectively dye mitochondria and emit intense fluorescence by reacting with thiols. Accordingly, it can be used to image the distribution and activation of thiols in a living cell or an intact living tissue.

Abstract: Provided is a two-photon fluorescent probe, and more particularly, a two-photon fluorescent probe which is one or more selected from compounds represented by Formulae 1 and 2, a method for manufacturing the same, and an imaging method of zinc ions within the mitochondrion using the same. Since two probes are introduced into one molecule, the two-photon fluorescent probe of the present invention can selectively dye the mitochondria, simultaneously with reacting with zinc ions, thereby generating intense fluorescence. Thus, the two-photon fluorescent probe of the present invention can be used for the imaging of zinc ion distribution and activation within the mitochondrion in living cells or intact biological tissues.

Abstract: The present invention relates to a two-photon fluorescent probe, more particularly a two-photon fluorescent probe represented by Formula 1, a method for preparing same and a method for imaging thiols in mitochondria using same. The two-photon fluorescent probe according to the present invention, having two probes introduced in one molecule, can selectively dye mitochondria and emit intense fluorescence by reacting with thiols. Accordingly, it can be used to image the distribution and activation of thiols in a living cell or an intact living tissue.

Abstract: Provided is a two-photon fluorescent probe, and more particularly, a two-photon fluorescent probe which is one or more selected from compounds represented by Formulae 1 and 2, a method for manufacturing the same, and an imaging method of zinc ions within the mitochondrion using the same. Since two probes are introduced into one molecule, the two-photon fluorescent probe of the present invention can selectively dye the mitochondria, simultaneously with reacting with zinc ions, thereby generating intense fluorescence. Thus, the two-photon fluorescent probe of the present invention can be used for the imaging of zinc ion distribution and activation within the mitochondrion in living cells or intact biological tissues.

Abstract: Provided are a method for dual-color imaging of sodium/calcium activities using a two-photon fluorescent probe and a method for preparing the two-photon fluorescent probe. The disclosed two-photon fluorescent probe for detecting calcium ions near the cell membrane reacts with calcium cations to exhibit strong two-photon fluorescence and may be selectively and easily loaded into the cell membrane by forming a complex with a calcium ion. Further, it allows imaging of the distribution of calcium cations in a living cell or tissue since it can selectively detect calcium ions in the living cell or tissue at a depth of 100 to 200 ?m for more than 60 minutes. In addition, by staining the living cell or tissue with two probes of different fluorescent colors, the calcium and sodium activities can be imaged simultaneously at different channels.

Abstract: Disclosed are a solid oxide fuel cell including: a) an anode support; b) a solid electrolyte layer formed on the anode support; and c) a nanostructure composite cathode layer formed on the solid electrolyte layer, wherein the nanostructure composite cathode layer includes an electrode material and an electrolyte material mixed in molecular scale, which do not react with each other or dissolve each other to form a single material, and a method for fabricating the same. The fuel cell is operable at low temperature and has high performance and superior stability.

Abstract: Provided are a method for dual-color imaging of sodium/calcium activities using a two-photon fluorescent probe and a method for preparing the two-photon fluorescent probe. The disclosed two-photon fluorescent probe for detecting calcium ions near the cell membrane reacts with calcium cations to exhibit strong two-photon fluorescence and may be selectively and easily loaded into the cell membrane by forming a complex with a calcium ion. Further, it allows imaging of the distribution of calcium cations in a living cell or tissue since it can selectively detect calcium ions in the living cell or tissue at a depth of 100 to 200 ?m for more than 60 minutes. In addition, by staining the living cell or tissue with two probes of different fluorescent colors, the calcium and sodium activities can be imaged simultaneously at different channels.

Abstract: A two-photon probe for real-time monitoring of intracellular calcium ions is provided. The two-photon probe is very suitable for real-time imaging of intracellular calcium ions, shows 20˜50-fold TPEF enhancement in response to Ca2+, has a dissociation constant (KdTP) of 0.14±0.02 to 0.25±0.03 ?M, and emits 5-fold stronger TPEF than currently available one-photon fluorescent Ca2+ probes. Unlike the previously available probes, the two-photon probe can selectively detect dynamic levels of intracellular free Ca2+ in live cells and living tissues without interference from other metal ions and from the membrane-bound probes. Moreover, the two-photon probe is capable of monitoring the calcium waves at a depth of 100-300 ?m in live tissues for 1,100-4,000 s using two-photon microscopy (TPM) with no artifacts of photo-bleaching. Further provided are a method for preparing the two-photon probe and a method for real-time monitoring of intracellular calcium ions using the two-photon probe.

Abstract: A method of forming a semiconductor memory device includes forming a tunnel insulating layer on a semiconductor substrate, and forming a silicon layer, including metal material, on the tunnel insulating layer. Accordingly, an increase in the strain energy of the conductive layer may be prohibited and, therefore, the growth of grains constituting the conductive layer may be prevented. Furthermore, a threshold voltage distribution characteristic and electrical properties of a semiconductor memory device may be improved.

Abstract: A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or the amorphous carbon film can be reduced or a compression stress film is formed between the etched layer or the amorphous carbon film to prevent a lifting phenomenon from occurring and thus another pattern can be formed to fabricate a highly integrated semiconductor device.

Abstract: An active structure of a semiconductor device. In one aspect, the active structure of the semiconductor device includes first to (n)th field regions, and first to (n+1)th active regions formed alternately with the first to (n)th field regions, wherein one or more of the first to (n+1)th active regions are connected at edge portions thereof to close one or more of the field regions. In another aspect, the active structure of the semiconductor device includes first to (n)th field regions, and first to (n+1)th active regions formed alternately with the first to (n)th field regions, wherein the first and (n+1)th active regions are connected to (n+2)th and (n+3)th active regions at edge portions thereof, closing the field regions.

Abstract: A method of manufacturing a flash memory device includes the steps of forming gate patterns for cells and gate patterns for select transistors over a semiconductor substrate, forming a buffer insulating layer on the resulting surface including the gate patterns, forming an insulating layer to form void in spaces between the gate patterns for cells, forming a nitride layer on the insulating layer, and forming a spacer on one side of each of the gate patterns for select transistors by a spacer etch process.

Abstract: A method of manufacturing flash memory devices increases a coupling ratio by increasing the height of a floating gate externally projecting from an isolation layer. A portion of the isolation layer between the floating gates is etched so that a control gate to be formed subsequently is located between the floating gates. Accordingly, an interference phenomenon can be reduced.

Abstract: A method of forming a gate of a flash memory device, including the steps of forming a gate on a semiconductor substrate and forming an oxide layer on the entire surface of the gate, forming a nitride layer on a sidewall of the oxide layer in a spacer form, performing a polishing process so that a top surface of the gate is exposed, and then stripping the nitride layer to form an opening, forming a barrier metal layer on a sidewall of the opening, and forming a tungsten layer in the opening.

Abstract: A method of forming a semiconductor memory device includes forming a tunnel insulating layer on a semiconductor substrate, and forming a silicon layer, including metal material, on the tunnel insulating layer. Accordingly, an increase in the strain energy of the conductive layer may be prohibited and, therefore, the growth of grains constituting the conductive layer may be prevented. Furthermore, a threshold voltage distribution characteristic and electrical properties of a semiconductor memory device may be improved.

Abstract: A semiconductor device includes a first barrier metal layer and a second barrier metal layer, a third barrier metal layer, and a metal line. The first barrier metal layer and the second barrier metal layer are formed and on a top surface of an insulating layer over a semiconductor substrate on the bottom surface of trenches formed in the insulating layer. The third barrier metal layer is formed on sidewalls of trenches. The metal line gap-fills the trenches. In a method of forming a metal line of a semiconductor device, trenches are formed within an insulating layer over a semiconductor substrate. A first barrier metal layer and a second barrier metal layer are formed on a bottom surface of the trenches and on a top surface of the insulating layer. A third barrier metal layer is formed on sidewalls of trenches. A metal line gap-fills the trenches.

Abstract: In a method of fabricating a flash memory device, after an isolation trench is formed, a bottom surface and sidewalls of the trench are gap-filled with a HARP film having a favorable step coverage. A wet etch process is performed such that the HARP film remains on the sidewalls of a tunnel dielectric layer, thereby forming a wing spacer. Accordingly, the tunnel dielectric layer can be protected and an interference phenomenon can be reduced because a control gate to be formed subsequently is located between floating gates.