Abstract: An active structure of a semiconductor device. In one aspect, the active structure of the semiconductor device includes first to (n)th field regions, and first to (n+1)th active regions formed alternately with the first to (n)th field regions, wherein one or more of the first to (n+1)th active regions are connected at edge portions thereof to close one or more of the field regions. In another aspect, the active structure of the semiconductor device includes first to (n)th field regions, and first to (n+1)th active regions formed alternately with the first to (n)th field regions, wherein the first and (n+1)th active regions are connected to (n+2)th and (n+3)th active regions at edge portions thereof, closing the field regions.

Abstract: The present invention discloses a method of manufacturing a flash memory device comprising the steps of forming a first insulating layer and a first conductive layer on a semiconductor substrate; etching the first conductive layer, the first insulating layer and the semiconductor substrate to form a trench; forming an isolation layer on a region on which the trench is formed; forming a second conductive layer to make the second conductive layer contact with the first conductive layer; and removing the second conductive layer formed on the isolation layer.

Abstract: A semiconductor device includes a first barrier metal layer and a second barrier metal layer, a third barrier metal layer, and a metal line. The first barrier metal layer and the second barrier metal layer are formed and on a top surface of an insulating layer over a semiconductor substrate on the bottom surface of trenches formed in the insulating layer. The third barrier metal layer is formed on sidewalls of trenches. The metal line gap-fills the trenches. In a method of forming a metal line of a semiconductor device, trenches are formed within an insulating layer over a semiconductor substrate. A first barrier metal layer and a second barrier metal layer are formed on a bottom surface of the trenches and on a top surface of the insulating layer. A third barrier metal layer is formed on sidewalls of trenches. A metal line gap-fills the trenches.

Abstract: A method of forming a metal line in a semiconductor device, including the steps of forming a metal line in a semiconductor device in which dummy patterns are formed on a dummy region by using non-metal material when a metal line is formed through a damascene process to prevent a formation of an oxide layer on an aluminum layer caused by a slurry and cleaning solution used in the chemical mechanical polishing (CMP) process and carry out an uniform polishing process, whereby it is possible to prevent a digging phenomenon on a metal layer from being generated.

Abstract: A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or the amorphous carbon film can be reduced or a compression stress film is formed between the etched layer or the amorphous carbon film to prevent a lifting phenomenon from occurring and thus another pattern can be formed to fabricate a highly integrated semiconductor device.

Abstract: A method of manufacturing flash memory devices increases a coupling ratio by increasing the height of a floating gate externally projecting from an isolation layer. A portion of the isolation layer between the floating gates is etched so that a control gate to be formed subsequently is located between the floating gates. Accordingly, an interference phenomenon can be reduced.

Abstract: A method of forming a gate of a flash memory device, including the steps of forming a gate on a semiconductor substrate and forming an oxide layer on the entire surface of the gate, forming a nitride layer on a sidewall of the oxide layer in a spacer form, performing a polishing process so that a top surface of the gate is exposed, and then stripping the nitride layer to form an opening, forming a barrier metal layer on a sidewall of the opening, and forming a tungsten layer in the opening.

Abstract: A method of manufacturing a flash memory device includes the steps of forming gate patterns for cells and gate patterns for select transistors over a semiconductor substrate, forming a buffer insulating layer on the resulting surface including the gate patterns, forming an insulating layer to form void in spaces between the gate patterns for cells, forming a nitride layer on the insulating layer, and forming a spacer on one side of each of the gate patterns for select transistors by a spacer etch process.

Abstract: The present invention relates to a method of manufacturing a flash memory device. The method includes the steps of forming cell gate patterns and select transistor gate patterns on a semiconductor substrate; forming a low dielectric layer on the resultant structure; etching the low dielectric layer, leavinin gaps adjacent the cell gate patterns; and, forming a nitride layer spacer on one side wall of each of the select transistor gate patterns. The resulting flash memory device has an improved rate of change in the threshold voltage and reduces the contact resistance when a self-aligned contact method is subsequently performed.

Abstract: A portable computer includes a main body, a monitor to form an image thereon, a combining member rotatably coupled with the monitor, and a locking unit having an engaging part provided at one of the combining member and the main body and a hanging part provided at the other one of the combining member and the main body, the hanging part being capable of attaching and detaching the monitor to the main body by rotating between a coupling position at which the hanging part is coupled with the engaging part and a separating position at which the hanging part is separated from with the engaging part. Accordingly, the monitor can easily be attached to and detached from the main body of the portable computer.

Abstract: A laundry dryer is provided. The laundry dryer includes a drying drum to put laundry in, a base, and a condensed water storage. The base forms a passage to exhaust water vapor passing through the drying drum to the outside. The condensed water storage stores moisture contained in the water vapor.

Abstract: There is provided an air inlet structure of a laundry dryer. In the air inlet structure, a base defines an air inlet, a front cabinet is disposed in front of the base and defines a suction hole to pass ambient air into the base, a cooling fan is stably disposed in the base to suck the ambient air, a blower tube forms a flow passage for the ambient air, a blower cover is fixed to the base to connect the blower tube and the cooling fan, and an air guide is disposed between the base and the blower cover, the air guide having a shroud at a center portion.

Abstract: Provided is a laundry dryer. The laundry dryer includes a drying drum for inserting laundry in, a base, and a cabinet enclosing the drying drum and the base. The base includes an outside air intake port that suctions indoor air, an air passage for moist air from the drying drum to pass through, and an impurity descending slot recessed a predetermined depth at a front of the outside air intake port for impurities to fall into.

Abstract: Provided is a drying machine. The drying machine includes a base lower unit, a base upper unit, a moisture sensor mounting portion, and a moisture sensor. The base lower unit forms a passage within. The base upper unit is mounted on a top of the base lower unit to cover the passage. The moisture sensor mounting portion is formed on a top of the base upper unit. The moisture sensor is mounted on the moisture sensor mounting portion, to sense a moisture level of air flowing through the passage.

Abstract: The present invention provides a drum type washer with dry function, by which a product cost is lowered and by which compatibility of a blower cover is enhanced. The present invention includes a first duct housing provided to a tub included in the drum type washer, a second duct housing provided to an upper side of the first duct housing, a blower cover provided to the upper side of the first duct housing adjacent to the second duct housing, the blower cover being formed of a synthetic resin based injection material, a heater provided between the first and second duct housings, a motor provided to the blower cover, and a blower provided under the blower being rotatably connected to the motor.

Abstract: There is provided an air inlet structure of a laundry dryer. In the air inlet structure, a base defines an air inlet, a front cabinet is disposed in front of the base and defines a suction hole to pass ambient air into the base, a cooling fan is stably disposed in the base to suck the ambient air, a blower tube forms a flow passage for the ambient air, a blower cover is fixed to the base to connect the blower tube and the cooling fan, and an air guide is disposed between the base and the blower cover, the air guide having a shroud at a center portion.

Abstract: Provided is an air flow structure for a dryer, which includes a drying fan, and an air guide having a bent and inclined shape so as to guide flow of a circulation air discharged by the drying fan. This air flow structure improves air circulation flow in the dryer, reduces noise generated in the drying procedure, and increases air volume introduced into a drying duct.

Abstract: A laundry dryer includes a dry drum in which laundry is loaded, a noise reduction member mounted on an outer circumference of the dry drum to absorb vibration/noise, a lift attached on an inner circumference of the dry drum to lift the laundry, a coupling member coupling the noise reduction member and/or the lift to the dry drum, and a belt disposed around the dry drum.

Abstract: A microwave oven includes a safety mechanism which automatically cuts off a supply of electric power to the oven when a panel of the oven housing has been removed, even if the power supply cord is still plugged in. The safety mechanism includes a switch disposed on the housing for cutting off the power. A cover for the switch is movable between a first position covering the switch, and a second position exposing the switch. The switch is biased to a power-cut-off position and the cover is biased to the first position. A structure of the panel is arranged to automatically move the cover to its second position, as well as to move the switch to a power-supply position, in response to the panel being in an assembled state. When the panel is removed, the switch automatically cuts off the electric power, and the cover moves to the first position covering the switch.

Abstract: A cooking chamber of a microwave oven is illuminated during a given cooking operation. During that cooking operation the color of the illumination is changed in accordance with the progress of the cooking operation, such as the progress of the cooking time or the temperature of food being cooked, to enable the cooking progress to be visually monitored from a distance.