Abstract: Disclosed is a positive electrode for a lithium-sulfur battery. The positive electrode includes a sulfur-carbon composite as a positive electrode active material. The sulfur-carbon composite includes a porous carbonaceous material having a high porosity and high specific surface area. Therefore, when the sulfur-carbon composite is applied to a battery, the battery shows a reduced initial irreversible capacity and improved output characteristics and life characteristics.

Abstract: Disclosed are an artificial implant and a method for manufacturing same, the artificial implant comprising: a silicone shell consisting of an upper portion, a lower portion, and a side portion; and a filler injected into the silicone shell, wherein the silicone shell includes at least one silicone layer and at least one reinforcing layer, the reinforcing layer being provided on at least a portion of the lower portion and the side portion of the silicone shell, or the silicone shell includes a layered structure having a step.

Abstract: A substrate treatment apparatus according to an aspect of the present invention includes: a support plate that supports a substrate and is provided with a heater member for heating the substrate; and a cooling unit for forcedly cooling the support plate, wherein the cooling unit includes: a cooling housing to provide a cooling space; a plurality of gas feed nozzles that is arranged in the cooling housing and supplies cooling gas toward the heater member; and a plurality of gas feed lines that is directly connected to the gas feed nozzles and supplies the cooling gas transferred from the outside to the gas feed nozzles.

Abstract: Disclosed is an artificial implant comprising: a silicone shell; and a filler filling the interior of the shell, wherein at least a portion of the shell is a rupture-prevention part comprising two or more silicone layers and one or more reinforcing material layers interposed therebetween.

Abstract: Disclosed is a positive electrode for a lithium-sulfur battery, including a sulfur-carbon composite as a positive electrode active material. The sulfur-carbon composite includes a porous carbonaceous material having a high specific surface area, and the total pore volume in the carbonaceous material and a volume of pores having a specific diameter are controlled to specific ranges. Also disclosed is a lithium-sulfur battery using the sulfur-carbon composite. The lithium-sulfur battery shows reduced initial irreversible capacity and improved output characteristics and life characteristics.

Abstract: A mask includes a body unit through which a deposition opening is defined, and a protrusion unit through which a pattern opening is defined and which protrudes from a corner of the body unit, where a thickness of the body unit is greater than a thickness of the protrusion unit.

Abstract: Provided is a mask manufacturing method which includes preparing a mask sheet and a frame, stretching the mask sheet, and fixing the stretched mask sheet to the frame, and forming cell openings in the mask sheet fixed to the frame.

Abstract: A positive electrode for a lithium-sulfur battery is provided. The positive electrode includes a positive electrode active material comprising a first and second sulfur-carbon composites respectively comprising a first and a second carbonaceous materials having a different specific surface area and pore volume from each other, and provides reduced initial irreversible capacity and improved output characteristics and life characteristics of a secondary battery.

Abstract: Disclosed is an apparatus and method of manufacturing a display device. The apparatus includes a deposition source, and a mask assembly disposed between a substrate and the deposition source, the mask assembly includes a mask frame having an opening area, a first support frame disposed across the opening area in a first direction, and having both ends disposed on the mask frame, and a second support frame disposed across the opening area in a second direction, and having both ends disposed on the mask frame, the first support frame and the second support frame intersect each other, one of the first support frame and the second support frame includes an accommodation portion, and the other of the first support frame and the second support frame is inserted into the accommodation portion.

Abstract: An air conditioning device for a vehicle includes: a housing having an inside divided into an inflow space, a heat exchange space, and an outflow space, which are straightly arranged, and having a plurality of discharge ports, which communicates with an interior, at the inflow space; a blowing unit disposed at the inflow space of the housing and configured to blow air; a heat exchange unit disposed at the heat exchange space of the housing and configured to adjust a temperature of conditioned air by exchanging heat with air; and an opening-closing door disposed at the outflow space of the housing and configured to open and close the plurality of discharge ports such that conditioned air at an adjusted temperature selectively flows to the plurality of discharge ports. The air conditioning device adjusts the temperature of conditioned air for respective modes and reduces a flow resistance of air.

Abstract: A method for preparing a sulfur-carbon composite including a step of pretreating a carbon material is provided. The method is capable of removing water and other impurities from the carbon material effectively, and the sulfur-carbon composite obtained by the method used as a positive electrode active material of a lithium-sulfur battery provides improved sulfur supportability and over-voltage performance of the lithium-sulfur battery, reduced initial irreversible capacity of the positive electrode active material, and improved output characteristics and life characteristics.

Abstract: A stack type semiconductor device including a first wafer and a second wafer. The first wafer including at least one first chip. The second wafer including at least one second chip electrically connected with the first chip. Each of the first and second chips including a test circuit block, at least one test bonding pad and a hybrid boning member. The test circuit block performing a test operation based on a test signal. The test bonding pad arranged on a bonding surface of each of the first and second chips to transmit the test signal and signals for driving the test circuit block between the first and second chips. The hybrid bonding member electrically connected between the test bonding pads.

Abstract: An electronic device according to various embodiments may include at least one transceiver, and at least one processor, operatively coupled to the at least one transceiver, configured to control to transmit, via a device-to-device (D2D) communication path to at least another electronic device, a signal with a first transmit (Tx) power, and control to re-transmit, via the D2D communication path to the at least another electronic device, the signal with a second Tx power lower than the first Tx power.

Abstract: An electronic device according to various embodiments may include at least one transceiver, and at least one processor, operatively coupled to the at least one transceiver, configured to control to transmit, via a device-to-device (D2D) communication path to at least another electronic device, a signal with a first transmit (Tx) power, and control to re-transmit, via the D2D communication path to the at least another electronic device, the signal with a second Tx power lower than the first Tx power.

Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

Abstract: A semiconductor device includes: a main driving unit configured to receive an output data and to drive the received data to a data output pad; a pre-emphasis data generation unit configured to compare a delayed data obtained by delaying the output data by one data period with the output data, to delay the comparison result by one data period, and to output the delayed data as pre-emphasis data; and a pre-emphasis driving unit configured to receive the pre-emphasis data and to drive the received data to the data output pad.

Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.