Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.

Abstract: A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.

Abstract: A dryer for an electrode substrate of a rechargeable battery according to an exemplary embodiment of the present invention includes: a drying oven for drying an electrode substrate by feeding the electrode substrate to an inlet and discharging it through an outlet; fixed guide rolls provided at a distance from each other between the inlet and the outlet to guide the electrode substrate; lifting guide rolls ascended or descended at one side of the respective fixed guide rolls to guide the moving electrode substrate; driving rolls disposed to correspond to locations of the lifting guide rolls; and a shuttle moving toward the outlet from the inlet.

Abstract: An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode.

Abstract: Provided are a lighting unit and a display device including the same. The lighting unit includes a bottom cover having a plurality of sidewalls, light emitting modules each including a board disposed on the bottom cover and a plurality of light emitting diodes mounted on the board, and a light-transmitting resin layer covering the bottom cover and the board.

Abstract: An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode.

Abstract: Provided are a lighting unit and a display device including the same. The lighting unit includes a bottom cover having a plurality of sidewalls, light emitting modules each including a board disposed on the bottom cover and a plurality of light emitting diodes mounted on the board, and a light-transmitting resin layer covering the bottom cover and the board.

Abstract: A method for displaying a three-dimensional (“3D”) image, wherein the method includes; sequentially displaying a left frame image corresponding to a left eye and a right frame image corresponding to a right eye on a display panel, blocking a light provided to a display block of the display panel when the display block displays a mixed image which includes a left eye image of the left frame image corresponding to the left eye and a right eye image of the right frame image corresponding to the right eye, and providing the light to the display block of the display panel when the display block displays only one of the left eye image and the right eye image.

Abstract: The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

Abstract: The present invention relates to a fabrication method for polycrystalline silicon thin that is capable of providing uniform crystallization of polycrystalline silicon thin film by laser using a mask having a mixed structure of laser transmission regions and laser non-transmission regions, wherein the laser transmission regions exist asymmetrically on the basis of a laser scanning directional axis, and the laser transmission regions exist symmetrically on the basis of a certain central axis, and the laser transmission regions are shifted to a certain distance on the basis of another axis parallel to the certain central axis, so that the laser transmission regions and non laser transmission regions are alternately positioned.

Abstract: An organic light-emitting display includes a substrate, a thin film transistor on the substrate, an organic light-emitting diode electrically connected to the thin film transistor, and a photo sensor having a plurality of photo diodes connected to one another in parallel.

Abstract: A method for displaying a three-dimensional (“3D”) image, wherein the method includes; sequentially displaying a left frame image corresponding to a left eye and a right frame image corresponding to a right eye on a display panel, blocking a light provided to a display block of the display panel when the display block displays a mixed image which includes a left eye image of the left frame image corresponding to the left eye and a right eye image of the right frame image corresponding to the right eye, and providing the light to the display block of the display panel when the display block displays only one of the left eye image and the right eye image.

Abstract: An organic light emitting diode (OLED) display device and a method for aging the organic light emitting diode (OLED) display device. The OLED display device is constructed with an organic light emitting diode, a scan line for applying a scan signal, a data line for applying a data signal, a driving unit for applying the data signal in response to the scan signal, a driving transistor having a gate terminal electrically connected to the driving unit to supply a driving current to the organic light emitting diode in response to the data signal, and a first reverse bias transistor electrically connected between the gate terminal of the driving transistor and a first reverse bias voltage source.

Abstract: The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

Abstract: A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.

Abstract: A car control system is disclosed. The car control system for controlling a car by being linked with a car control device (electronic control unit, ECU) that is installed inside the car for electronic control of the car can include: an authentication server configured to perform access authentication for a user terminal and configured to generate an authentication result based on least one of terminal information of the user terminal and vehicle identification information; and a car access device configured to be directly connected with the car control device through an internal network of the car and configured to determine whether a car control request for control of the car by the user terminal is to be relayed to the car control device according to the authentication result of the user terminal.

Abstract: A thin film transistor including a lightly doped drain (LDD) region or offset region, wherein the thin film transistor is formed so that primary crystal grain boundaries of a polysilicon substrate are not positioned in the LDD or offset region.

Abstract: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.

Abstract: A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.