Abstract: A method of fabricating a polycrystalline silicon thin film for a thin film transistor (TFT), a mask pattern used for the method, and a method of fabricating a flat panel display device using the method and the mask pattern. In one embodiment, a mask pattern includes a plurality of regions, each of the regions having at least one of one or more transparent portions or one or more non-transparent portions. A total area of the one or more transparent portions and the one or more non-transparent portions in one of the regions is substantially equal to a total area of the one or more transparent portions and the one or more non-transparent portions in at least one other of the regions. A total area of the transparent portions in the mask pattern is different from a total area of the non-transparent portions in the mask pattern.

Abstract: The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion.

Abstract: An organic light emitting display (OLED) including a thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes, the active layer being insulated from the gate electrode and including an oxide semiconductor and the source and drain electrodes being insulated from the gate electrode and contacting the active layer; a first insulation layer covering the TFT; a second insulation layer on the first insulation layer, the second insulation layer being formed of amorphous silicon without doping; a pixel electrode on the second insulation layer; a third insulation layer on the second insulation layer, the third insulation layer covering an edge of the pixel electrode; an organic light emitting layer on the pixel electrode; and a facing electrode on the organic light emitting layer and the third insulation layer.

Abstract: An organic light emitting display apparatus includes a substrate, a light conversion layer on the substrate, the light conversion layer including an oxide semiconductor, a passivation layer covering the light conversion layer, a first electrode on the passivation layer, an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.

Abstract: Provided are a lighting unit and a display device including the same. The lighting unit includes a bottom cover having a plurality of sidewalls, light emitting modules each including a board disposed on the bottom cover and a plurality of light emitting diodes mounted on the board, and a light-transmitting resin layer covering the bottom cover and the board.

Abstract: A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.

Abstract: A photo sensor includes a light incidence unit including a plurality of light incidence layers, the light incidence unit having a varying light transmittance with respect to external light, and a photo sensing unit including a plurality of photo sensing elements, the photo sensing unit being configured to output electrical signals in accordance with an amount of light transmitted through the light incidence unit to determine intensity of the external light, each of the photo sensing elements being configured to output electrical signals in accordance with light transmitted through a respective light incidence layer.

Abstract: A method of fabricating a polycrystalline silicon thin film for a thin film transistor (TFT), a mask pattern used for the method, and a method of fabricating a flat panel display device using the method and the mask pattern. In one embodiment, a mask pattern includes a plurality of regions, each of the regions having at least one of one or more transparent portions or one or more non-transparent portions. A total area of the one or more transparent portions and the one or more non-transparent portions in one of the regions is substantially equal to a total area of the one or more transparent portions and the one or more non-transparent portions in at least one other of the regions. A total area of the transparent portions in the mask pattern is different from a total area of the non-transparent portions in the mask pattern.

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.

Abstract: A method for displaying a three-dimensional (“3D”) image, wherein the method includes; sequentially displaying a left frame image corresponding to a left eye and a right frame image corresponding to a right eye on a display panel, blocking a light provided to a display block of the display panel when the display block displays a mixed image which includes a left eye image of the left frame image corresponding to the left eye and a right eye image of the right frame image corresponding to the right eye, and providing the light to the display block of the display panel when the display block displays only one of the left eye image and the right eye image.

Abstract: A polycrystalline silicon thin film to be used in display devices, the thin film comprising adjacent primary grain boundaries that are not parallel to each other and do not contact each other, wherein an area surrounded by the primary grain boundaries is larger than 1 ?m2, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.

Abstract: A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the primary grain boundaries is larger than 1 ?m2, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.

Abstract: A touch screen display apparatus is disclosed. In one embodiment, the touch screen display apparatus includes: i) a plurality of light emitting devices disposed on a substrate, ii) at least one first light sensor, iii) at least one second light sensor, wherein the at least one first light sensor is less shielded from the light emitting devices than the at least one second light sensor and iv) a light detection controller configured to: i) detect the intensity of ambient illumination, ii) selectively operate one of 1) the at least one first light sensor and 2) the at least one second light sensor based at least in part on the detected intensity and iii) detect a touch location based at least in part on light detection by the selected sensor. According to one embodiment, light may be efficiently sensed, irrespective of the external light, since an additional internal sensor (first sensor) detects the light when the amount of the external light is insufficient.

Abstract: A method of forming a polycrystalline thin film for a thin film transistor, a mask used in the method, and a method of making a flat panel display device using the method of forming a polycrystalline thin film for a thin film transistor are disclosed. Certain embodiments are capable of providing a display device in which the polycrystalline thin film is uniformly crystallized such luminance non-uniformity is reduced. In the method of forming a polycrystalline thin film for a thin film transistor, amorphous material is crystallized using a laser and a mask having a mixed structure of one or more transmission region sets each comprising one or more transmission regions through which the laser beam is capable of passing and one or more non-transmission regions through which the laser beam is not capable of passing. The laser beam is directed onto overlapping regions of the material.

Abstract: The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherein the mask comprises two or more of dot pattern groups in which the non-transmission pattern group is perpendicular to a scan directional axis, and the dot pattern groups are formed in a certain shape and comprise first non-transmission patterns that are not respectively arranged in a row in an axis direction perpendicular to the scan directional axis, and second non-transmission patterns that are formed in the same arrangement as the first non-transmission patterns, but are positioned in such a manner that the second non-transmission patterns are parallel to the first non-transmission patterns and vertical axis of the scan directional axis.

Abstract: A nonvolatile memory device may include a substrate, a semiconductor layer on the substrate, and including a source region, a drain region having a relatively shallower impurity injection region than that of the source region and a channel region disposed between the source and drain regions, a first gate insulating layer on the semiconductor layer, and having regions corresponding to the source and drain regions thinner than a region corresponding to the channel region, and a first gate electrode, a second gate insulating layer, and a second gate electrode which are disposed on the first gate insulating layer. An organic light emitting display device (OLED) may include the nonvolatile memory device.

Abstract: A photo sensor includes a light incidence unit including a plurality of light incidence layers, the light incidence unit having a varying light transmittance with respect to external light, and a photo sensing unit including a plurality of photo sensing elements, the photo sensing unit being configured to output electrical signals in accordance with an amount of light transmitted through the light incidence unit to determine intensity of the external light, each of the photo sensing elements being configured to output electrical signals in accordance with light transmitted through a respective light incidence layer.

Abstract: A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.

Abstract: Disclosed is a method of fabricating a thin film transistor in which, in order to control the concentration of metal catalysts remaining on a polycrystalline silicon layer when an amorphous silicon layer formed on an insulating substrate is crystallized into the polycrystalline silicon layer by a super grain silicon (SGS) crystallization method, the substrate is annealed so that a very small amount of metal catalyst is adsorbed or diffused into a capping layer, and then a crystallization process is carried out, thereby minimizing the concentration of the metal catalysts remaining on the polycrystalline silicon layer, as well as forming a thick metal catalyst layer.

Abstract: An organic light emitting diode (OLED) display device and a method for aging the organic light emitting diode (OLED) display device. The OLED display device is constructed with an organic light emitting diode, a scan line for applying a scan signal, a data line for applying a data signal, a driving unit for applying the data signal in response to the scan signal, a driving transistor having a gate terminal electrically connected to the driving unit to supply a driving current to the organic light emitting diode in response to the data signal, and a first reverse bias transistor electrically connected between the gate terminal of the driving transistor and a first reverse bias voltage source.